Transient Surface Photovoltage Research Articles

Stable MOF-In2S3/ZnFe layered dioxide heterostructures for improving photocatalytic degradation: Degradation pathways, kinetics, and charge migration

In this paper, MOF-In2S3 were modified by ZnFe-layered dioxides (LDO) with strong stability to obtain high catalytic performance composite. The successful preparation of ZnFe-LDO/MOF-In2S3 not only retains the advantages of large specific surface area of MOF-In2S3 and the stability of ZnFe-LDO, but also improves its charge separation efficiency and the light absorption region through the construction of heterojunctions. As expected, the experimental results show that ZnFe-LDO/MOF-In2S3 has superior photo-electrocatalytic properties. The photocatalytic degradation efficiency of ZnFe-LDO/MOF-In2S3 for TCH and OTC reach 92.92% and 80%, respectively, within 25 min. And the corresponding degradation rate constants are up to 1.41332 and 0.45451 L·mg−1·min−1, respectively, which are accord with the pseudo-second-order kinetic constants. The intermediate of 0.6LDO/M-I degradation of TCH was proposed by liquid mass spectrometry (LC-MS). Notably, a special transient surface photovoltage (TPV) technique was used for discussing the charge transfer kinetics and the lifetime of photogenerated carriers. Based on Mott-Schottky (M-S), Ultraviolet-visible absorption spectrum (UV), X-ray Photoelectron Spectroscopy (XPS) results, electron paramagnetic resonance (EPR) results, and active substance capture experiment results, a Z-scheme heterojunction system was proposed. The above research work proposed a new approach to enhance the stability of catalytic materials by using the aid of layered dioxides. In addition, the characterization of surface photovoltage provides a new way to study charge transfer.

Effective nitrogen doping of TiO2 polymorphs at mild temperatures for visible-light-responsive hydrogen evolution

Herein, a mild-temperature nitrogen doping route with the urea-derived gaseous species as the active doping agent is proposed to realize visible-light-responsive photocatalytic hydrogen evolution both for the anatase and rutile TiO2. DFT simulations reveal that the cyanic acid (HOCN), derived from the decomposition of urea, plays a curial role in the effective doping of nitrogen in TiO2 at mild temperatures. Photocatalytic performance demonstrates that both the anatase and rutile TiO2 doped at mild temperatures exhibit the highest hydrogen evolution rates, although the ones prepared at high temperatures possess higher absorbance in the visible range. Steady-state and transient surface photovoltage characterizations of these doped TiO2 polymorphs prepared at different temperatures reveal that harsh conditions (high temperature reaction) typically result in the formation of intrinsic defects that are detrimental to the transport of the low-energy visible-light-induced electrons, while the mild-temperature nitrogen-doping could flatten the pristine upward band bending without triggering the formation of Ti3+, thus achieving enhanced visible-light-responsive hydrogen evolution rates. We anticipate that our findings will provide inspiring information for shrinking the gap between the visible-light-absorbance and the visible-light-responsiveness in the band engineering of wide-bandgap metal-oxide photocatalysts.

Charge Carrier Dynamics at Carbon/Perovskite Interface: Implications on Carbon‐Based HTM‐Free Solar Cell Stability

Carbon‐based hole transport material (HTM)‐free perovskite solar cells (CPSCs) are an innovative device architecture that mitigates inherent challenges associated with record‐breaking perovskite solar cells (PSCs), which rely on metal/HTMs, including instability, manufacturing intricacy, and elevated costs. The photovoltaic efficiency and stability of CPSCs are profoundly influenced by the charge carrier dynamics at the interfaces. Herein, the charge carrier dynamics at the carbon(C)–perovskite interface in CPSCs and its implications on photovoltaic performances and stability, an aspect that has received limited exploration thus far are probed, are investigated using transient surface photovoltage (Tr‐SPV) and transient photoluminescence measurements. The study reveals that the C‐electrode effectively acts as a selective barrier, impeding electrons while facilitating the extraction of holes at the C–perovskite interface. This selective blocking mechanism holds significant implications for improving the performance and stability of CPSCs over HTM‐free PSCs with gold(Au) electrodes. The stability of CPSCs is evaluated by measuring shelf life, maximum power point tracking, Tr‐SPV, and X‐Ray diffraction measurements. By delving into these pivotal aspects, this work aims to contribute to the advancement and understanding of CPSCs for sustainable and efficient energy conversion.

Construction of fast charge-transferred 0D/2D BiOBr/Bi2WO6 S-scheme heterojunction with enhanced photocatalytic performance

Novel Bi-based photocatalysts play an increasing role in dealing with environmental pollution and resource shortages. Among these Bi-based materials, BiOBr and Bi2WO6 have gained intensive attraction due to the appropriate energy band alignments and their anisotropic crystal structure. 0D/2D BiOBr/Bi2WO6 heterojunction was constructed by depositing BiOBr nanoparticles on few-layer Bi2WO6 nanosheets. The structure, optical property, and micromorphology of samples were characterized by XRD, XPS, UV–vis DRS, SEM, TEM, and AFM. The photoluminescence, photocurrent density, and electrochemical impedance spectroscopy (EIS) as well as the transient surface photovoltage (TSPV) were performed to explore the transfer of photoinduced charge carriers. The photocatalytic efficiency of the heterojunction is much improved, about 2.67 folds higher than that of pristine Bi2WO6. The fast separation and migration and the prolonged lifetime of photogenerated carriers in the BiOBr/Bi2WO6 heterojunction are validated by photoelectrochemical tests. The influence factors, versatility, and reusability of the heterojunction are also evaluated. Radical trapping test reveals that h+ and ·O2− are predominant active species and make a major contribution to the photoactivity of the BiOBr/Bi2WO6 heterojunction. The formed energy-band bending, the built-in electric field, and the S-scheme charge transfer strategy are thermodynamically and kinetically favorable for the photoactivity and stability of the heterojunction.

Exciton formation dynamics at the SiO2/Si interface

Excitons can operate as carriers for energy transduction in optoelectronics, and engineering their dynamics is of great interest. Here, we employ time-resolved terahertz spectroscopy to analyze exciton formation dynamics as a function of temperature for a (100) N-type silicon substrate passivated by native SiO2. By analyzing the frequency-resolved complex conductivity as a function of temperature we resolve the photophysics for the formation of free carriers into excitons. Notably, we observe a relatively long-lived ~300 ps transient population of free carriers at temperatures well below the Mott transition (4 K). We rationalize this by transient photophysics at the SiO2/N-type-Si surface, where holes localize and release under high injection conditions due to a transient surface photovoltage effect. We believe our results have implications for the design of excitonic-based electronic applications operating at cryogenic temperatures and accessed optically.

Interface Modification for Energy Level Alignment and Charge Extraction in CsPbI3 Perovskite Solar Cells.

In perovskite solar cells (PSCs) energy level alignment and charge extraction at the interfaces are the essential factors directly affecting the device performance. In this work, we present a modified interface between all-inorganic CsPbI3 perovskite and its hole-selective contact (spiro-OMeTAD), realized by the dipole molecule trioctylphosphine oxide (TOPO), to align the energy levels. On a passivated perovskite film, with n-octylammonium iodide (OAI), we created an upward surface band-bending at the interface by TOPO treatment. This improved interface by the dipole molecule induces a better energy level alignment and enhances the charge extraction of holes from the perovskite layer to the hole transport material. Consequently, a Voc of 1.2 V and a high-power conversion efficiency (PCE) of over 19% were achieved for inorganic CsPbI3 perovskite solar cells. Further, to demonstrate the effect of the TOPO dipole molecule, we present a layer-by-layer charge extraction study by a transient surface photovoltage (trSPV) technique accomplished by a charge transport simulation.

Surface Defect Mediated Interactions of Bacterial Growth Media on Microcrystalline ZnO

Nano- and microscale ZnO exhibits significant potential in biomedical applications as an antibacterial agent. This is attributed to the selective toxicity and growth inhibition for a wide range of both Gram-positive and Gram-negative bacteria as well as for microbial strains resistant to traditional antibiotics. Pursuit of novel bactericidal applications, however, is inhibited by uncertainty surrounding the underlying mechanisms of the observed antimicrobial action. The most common suggested mechanisms include generation of various reactive oxygen species, release of Zn ions and surface-surface interactions between the bacterial cell wall and free crystalline surface of ZnO. Recent work has placed an emphasis on the role of the free crystalline surface in bacterial growth inhibition. Additionally, the cytotoxicity of ZnO particles has long been known to be heavily dependent on environmental conditions, yet detailed descriptions of these phenomena are lacking. Herein we investigate the effects of interactions with both bacteria and the bacterial environments on the physicochemical and optoelectronic properties of the free crystalline surface of ZnO microparticles (MPs). This is done to gain insight into the nature of interactions with the bacterial growth media and the influence such interactions have on bacterial growth inhibition. Hereby, we expose hydrothermally grown ZnO MPs to phosphate-buffered saline (PBS) media both with and without the presence of Newman strain S. aureus bacteria. The surface electronic structure and charge dynamics are probed via both time and energy dependent surface photovoltage (SPV) conducted prior to and following minimum inhibitory concentration assays. We demonstrate significant changes in the characteristic timescales of long-lived processes in the SPV transients after exposure to phosphate-rich environments. We also note that the presence of bacteria has an impact on shorter lived processes and suppresses the effect of media at longer timescales. The SPV spectra point to a significant adsorption of phosphate compounds on the crystalline surface. We also demonstrate changes in the electronic structure as a result of exposure to PBS.

Tuning the Interfaces of ZnO/ZnCr2 O4 Derived from Layered-Double-Hydroxide Precursors to Advance Nitrogen Photofixation.

Drawing inspiration from the enzyme nitrogenase in nature, researchers are increasingly delving into semiconductor photocatalytic nitrogen fixation due to its similar surface catalytic processes. Herein, we reported a facile and efficient approach to achieving the regulation of ZnO/ZnCr2 O4 photocatalysts with ZnCr-layered double hydroxide (ZnCr-LDH) as precursors. By optimizing the composition ratio of Zn/Cr in ZnCr-LDH to tune interfaces, we can achieve an enhanced nitrogen photofixation performance (an ammonia evolution rate of 31.7 μmol g-1 h-1 using pure water as a proton source) under ambient conditions. Further, photo-electrochemical measurements and transient surface photovoltage spectroscopy revealed that the enhanced photocatalytic activity can be ascribed to the effective carrier separation efficiency, originating from the abundant composite interfaces. This work further demonstrated a promising and viable strategy for the synthesis of nanocomposite photocatalysts for nitrogen photofixation and other challenging photocatalytic reactions.

Advanced Characterization and Optimization of NiOx:Cu‐SAM Hole‐Transporting Bi‐Layer for 23.4% Efficient Monolithic Cu(In,Ga)Se2‐Perovskite Tandem Solar Cells

AbstractThe performance of five hole‐transporting layers (HTLs) is investigated in both single‐junction perovskite and Cu(In, Ga)Se2 (CIGSe)‐perovskite tandem solar cells: nickel oxide (NiOx,), copper‐doped nickel oxide (NiOx:Cu), NiOx+SAM, NiOx:Cu+SAM, and SAM, where SAM is the [2‐(3,‐6Dimethoxy‐9H‐carbazol‐9yl)ethyl]phosphonic acid (MeO‐2PACz) self‐assembled monolayer. The performance of the devices is correlated to the charge‐carrier dynamics at the HTL/perovskite interface and the limiting factors of these HTLs are analyzed by performing time‐resolved and absolute photoluminescence ((Tr)PL), transient surface photovoltage (tr‐SPV), and X‐ray/UV photoemission spectroscopy (XPS/UPS) measurements on indium tin oxide (ITO)/HTL/perovskite and CIGSe/HTL/perovskite stacks. A high quasi‐Fermi level splitting to open‐circuit (QFLS‐Voc) deficit is detected for the NiOx‐based devices, attributed to electron trapping and poor hole extraction at the NiOx‐perovskite interface and a low carrier effective lifetime in the bulk of the perovskite. Simultaneously, doping the NiOx with 2% Cu and passivating its surface with MeO‐2PACz suppresses the electron trapping, enhances the holes extraction, reduces the non‐radiative interfacial recombination, and improves the band alignment. Due to this superior interfacial charge‐carrier dynamics, NiOx:Cu+SAM is found to be the most suitable HTL for the monolithic CIGSe‐perovskite tandem devices, enabling a power‐conversion efficiency (PCE) of 23.4%, Voc of 1.72V, and a fill factor (FF) of 71%, while the remaining four HTLs suffer from prominent Voc and FF losses.

Surface Photovoltage Response of ZnO to Phosphate-Buffered Saline Solution with and without Presence of Staphylococcus aureus.

Nano- and microscale zinc oxide (ZnO) exhibits significant potential as a novel antibacterial agent in biomedical applications. However, the uncertainty regarding the underlying mechanisms of the observed antimicrobial action inhibits the realization of this potential. Particularly, the nature of interactions at the free crystalline surface and the influence of the local bacterial environment remains unclear. In this investigation, we utilize ZnO particles synthesized via tunable hydrothermal growth method as a platform to elucidate the effects of interactions with phosphate-rich environments and differentiate them from those with bacteria. This is achieved using the time- and energy-dependent surface photovoltage (SPV) to monitor modifications of the surface electronic structure and surface charge dynamics of the ZnO particles due to these interactions. It is found that there exists a dramatic change in the SPV transients after exposure to phosphate-rich environments. It also presents differences in the sub-bandgap surface electronic structure after these exposures. It can be suggested that these phenomena are a consequence of phosphate adsorption at surface traps corresponding to zinc deficiency defects. This effect is shown to be suppressed in the presence of Staphylococcus aureus bacteria. Our results support the previously proposed model of the competitive nature of interactions between S. aureus and aqueous phosphates with the free surface of ZnO and bring greater clarity to the effects of phosphate-rich environments on bacterial growth inhibition of ZnO.

Surface Photovoltage Study of Metal Halide Perovskites Deposited Directly on Crystalline Silicon.

Perovskite (PVK) films deposited directly on n-type crystalline Si substrates were investigated by two operating modes of the surface photovoltage (SPV) method: (i) the metal-insulator-semiconductor (MIS) mode and (ii) the Kelvin probe force microscopy (KPFM). By scanning from 900 to 600 nm in the MIS mode, we consecutively studied the relatively fast processes of carrier generation, transport, and recombination first in Si, then on both sides of the PVK/Si interface, and finally in the PVK layer and its surface. The PVK optical absorption edge was observed in the range of 1.61-1.65 eV in good agreement with the band gap of 1.63 eV found from photoluminescence spectra. Both SPV methods evidenced an upward energy band bending at the PVK/n-Si interface generating positive SPV. Drift-diffusion modeling allowed us to analyze the shape of the wavelength dependence of the SPV. It was also observed that the intense illumination in the KPFM measurements induces slow SPV transients which were explained by the creation and migration of negative ions and their trapping at the PVK surface. Finally, aging effects were studied by measuring again SPV spectra after one-year storage in air, and an increase in the concentration of shallow defect states at the PVK/n-Si interface was found.

Transitions in polycrystalline diamond probed by steady state, modulated and transient surface photovoltage spectroscopy

Numerous electronic transitions in polycrystalline chemical vapor deposition diamond with characteristic nucleation and growth sides were obtained by highly sensitive surface photovoltage (SPV) spectroscopy in dc (Kelvin probe), ac (modulated) and ac (transient) regimes from near infrared to deep ultraviolet. In the dc regime, defect transitions D1 to D8 were detected at 0.8–0.9, 1, 1.37, 1.78, 2.27, 3.15, 4.2 and 5.42 eV, respectively. Hints for more transitions were found for measurements in the ac (modulated) regime in the range near D3. SPV measurements in the ac (transient) regime showed the importance of disorder for relaxation of SPV signals excited at different photon energies. Phonon assisted transitions were observed at E g− E x− hν LA,LO, E g− E x + hν LA,LO and E g− E x + hν TO. The developed SPV techniques are suitable for applications in research and quality control not only for diamond but also for any other semiconductor with ultra-wide bandgap.

Surface selective passivation and FexNi1-xOOH co-modified Fe2O3 photoanode toward high-performance water oxidation

Improving the water-splitting performance of hematite (α-Fe2O3) is still hindered due to its severe charge recombination and poor water oxidation kinetics. Herein, borate-treated Ti–Fe2O3 combined with a FexNi1-xOOH cocatalyst (FexNi1-xOOH/B/Ti–Fe2O3) greatly improved the performance of Ti–Fe2O3, and reached a notable photocurrent density of 3.39 mA/cm2 at 1.23 V vs. RHE. Transient surface photovoltage spectroscopy (TPV) directly reveals that [B(OH)4]− as a Lewis base can selectively passivate acceptor surface states on Ti–Fe2O3 photoanode surface, efficiently enhancing the charge separation efficiency. Moreover, the FexNi1-xOOH thin layer is devoted to further facilitate holes injection into the electrolyte, accelerating the water oxidation kinetics of Ti–Fe2O3 photoanode. The synergetic integration of acceptor surface states passivation and FexNi1-xOOH cocatalyst provides a novel strategy for the construction of efficient photoanodes by surface engineering.

Plasmon-enhanced bulk charge separation via morphological and interfacial engineering in Au@carbon dots@CdS hybrid

The exploitation of morphological engineering strategies enables the design of semiconductor-based photocatalysts with a precision that significantly enhances their photocatalytic activity. In this study, a paradigm has been provided that embeds plasmonic nanostructures within the bulk of the semiconductor, which demonstrates an improvement in interfacial charge transfer and separation. It involves a distinct core-double shelled Au@carbon dots@CdS hybrid, exhibiting excellent photocatalytic H2 generation under the visible light radiation. The interfacial engineering between the plasmonic nucleus and the semiconductor shell has been performed by the incorporation of carbon dots as faster charge channels. The effective driving force for plasmon-enhanced bulk charge separation of semiconductors and the unhindered interfacial charge transmission derived from carbon dots have been demonstrated by the use of steady state surface photovoltage (SPV) and transient state surface photovoltage (TPV) methods, as well as some intrinsic kinetics information of interfacial photoexcited charge carriers transfer processes.

Synthesis Control of Charge Separation at Anatase TiO2 Thin Films Studied by Transient Surface Photovoltage Spectroscopy.

For the efficient photocatalytic oxidation of organic pollutants at surfaces of semiconductors, photogenerated holes shall be separated toward the surface and transferred to reactive surface sites, whereas the transfer of photogenerated electrons toward the surface shall be minimized. In this Research Article, the identification of suitable synthesis control of charge separation combined with an in-depth understanding of charge kinetics and trapping passivation mechanisms at the related surfaces can provide tremendous opportunities for boosting the photocatalytic performance. In this work, a comprehensive transient surface photovoltage spectroscopy study of charge separation at anatase TiO2 thin films, synthesized by ultrasonic spray pyrolysis from titanium(IV) isopropoxide (TTIP)–acetylacetone (AcacH) based precursor is reported. By varying the amount of AcacH in the precursor solution, an experimental approach of synthesis control of the charge transfer toward TiO2 surface is provided for the first time. An increased amount of AcacH in the precursor promotes transition from preferential fast electron to preferential fast hole transfer toward anatase surface, correlating with a strong increase of the photocatalytic decomposition rate of organic pollutants. Suitable mechanisms of AcacH-induced passivation of electron traps at TiO2 surfaces are analyzed, providing a new degree of freedom for tailoring the properties of photocatalytic systems.

Hydrogen effects at sputtered Tb-doped AlNxOy:H / c-Si(p) interfaces: A transient surface photovoltage spectroscopy study

In the present work, we studied the interface of terbium doped aluminum oxynitride (Tb-doped AlNxOy:H) deposited under different hydrogen flows with p-type doped crystalline silicon by applying transient surface photovoltage spectroscopy. We observed strong accumulation with concomitant passivation of boron acceptors in the crystalline silicon and defect generation near the interface. With increasing hydrogen flows, the net negative charge in the Tb-doped AlNxOy:H layer decreased, surface photovoltage signals related to defects increased, surface photovoltage transients decayed faster, and the slowest relaxation of charge carriers separated in space changed from trap limited to hopping transport via an exponential distribution of trap states in energy.

Charge reaction kinetics on TiO2 nanotubes under photoelectrochemical water oxidation condition

Artificial photosynthesis relies on the photoreactions between the chemical molecules and photogenerated charges. The oxygen evolution reactions are regarded as the most difficult procedure, because they are multiple-step reactions with multiple charges transfer. Notwithstanding the extensive study on photoelectrochemical and photochemical water oxidation, understanding how the surface charge reacts with the chemical molecules is limited, especially the reaction kinetics of the surface charges. We prepared anatase TiO2 nanotubes array and dense polycrystalline TiO2 films on Ti substrates, where the photocurrent increased about 4–4.5 times on nanotubes compared with the dense films. Moreover, the surface charge reaction rate and the accumulated charge densities were analyzed by transient surface photovoltage and transient photocurrent techniques. It was found a 2nd-order charge reaction behavior could be found when the charge density was high, differently, a 1st-order charge reaction could be observed when the charge density was low. The nanotubes structures would in situ grow from the Ti substrates, which simultaneously enhanced charge separation and transfer kinetics to improve the PEC performance.

Transient surface photovoltage spectroscopy of diamond

Contactless and highly sensitive probing of electronic transitions in diamond over a wide spectral range from near infrared to deep ultraviolet is still challenging. Surface photovoltage (SPV) signals depend on electronic transitions and transport phenomena leading to charge separation in space and allow for a contactless study of electronic transitions. Here, transient SPV spectroscopy in an arrangement with a charge amplifier and a laser tunable over a wide range was applied to study an undoped diamond single crystal between 0.8 and 5.9 eV at room temperature in ambient air. SPV transients were measured without and with weak visible bias light, which allowed for suppression of possible parasitic contributions in SPV signals not related to diamond and distinction of processes of charge separation that were independent of band bending. Transitions at 1.0 and 3.1 eV led to preferential separation of photogenerated holes toward the surface. In contrast, a transition at 1.8 eV caused preferential separation of photogenerated electrons toward the surface. Transitions near the indirect bandgap of diamond were observed at 5.27, 5.32, 5.48, and 5.53 eV and could be assigned to absorption assisted (i) by an indirect exciton and absorption of longitudinal optical and acoustic phonons, (ii) by absorption of transverse acoustic phonons, (iii) by emission of transverse acoustic phonons, and (iv) by emission of longitudinal optical and acoustic phonons, respectively. Charge separation under excitation at 5.27 eV was caused by directed charge transfer at/near the diamond surface after exciton diffusion followed by exciton dissociation.

Transient Surface Photovoltage Spectroscopy of (NH4)2Mo3S13/WSe2 Thin-Film Photocathodes for Photoelectrochemical Hydrogen Evolution.

Hydrogen produced from solar energy has the potential to replace petroleum in the future. To this respect, there is a need in the abandoned and efficient materials that can continuously split water molecules using solar energy. In this report, an ammonium thiomolybdate (ATM: (NH4)2Mo3S13) is evaluated as a p-type semiconductor film photocathode for hydrogen evolution reaction. The ATM thin films are prepared by spin-coating on fluorine-doped tin oxide substrates, and their structural, morphological, optical, photoelectrical, and photoelectrochemical (PEC) properties are studied. Transient surface photovoltage (TSPV) spectroscopy and spectroscopic ellipsometry indicate the band gap Eg = 1.9 eV for the ATM thin films. Furthermore, the photovoltage of the ATM thin films measured by TSPV is correlated to the photocurrents measured by the PEC characterization that can be used to evaluate the material potential for hydrogen generation. The films exhibit a low photocurrent density of 46 μA cm-2 at 0 VRHE. However, its combination with WSe2 thin-film photocathodes results in a significant increase in photocurrent density up to 4.6 mA cm-2 at 0 VRHE (100 times). The reason for such a strong charge carrier transfer effect for ATM/WSe2 heterojunction photocathodes is studied by TSPV spectroscopy that allows a comprehensive evaluation of potential photovoltaic materials toward PEC hydrogen production. Furthermore, the photovoltage generated by a WSe2 thin film is 30 times lower than that of its single crystal, which indicates that the quality of WSe2 thin films should be improved for faster PEC hydrogen evolution.

Wavelength dependent photoinduced charge carrier dynamics of heterojunction materials: The case of CuO/ZnO

Heterojunction materials composed of narrow and wide band-gap semiconductors possess different photoelectric responses under different wavelength incident light, and show distinct photogenerated charge carrier dynamics. In this work, taking the hydrothermal method fabricated CuO nanosheets / ZnO nanorods heterojunction materials as example, the wavelength dependent photoinduced charge carrier dynamics in this heterojunction material have been carefully studied. Transient surface photovoltage (TSPV) measurements reveal that the photogenerated holes gather at the surface of the fabricated CuO / ZnO with 355 nm light illumination, but photogenerated electrons gather at the surface under 532 nm light. Photocatalytic degradation experiments suggest that CuO / ZnO heterojunction material has better performance under ultraviolet light than that under visible light.