Total Te Research Articles

Study of T cell subsets in patients with cutaneous leishmaniasis.

The proportion of T lymphocyte populations was assessed using monoclonal antibodies (OKT3, OKT4, OKT8) and spontaneous E-rosette tests with SRBC (for total and active TE cells) in 36 patients with cutaneous leishmaniasis subdivided according to the clinical variety. The T cell profile was normal in patients with simple cutaneous leishmaniasis of early ulcerative type whereas active TE cells and OKT4 positive cells were reduced in some cases of late ulcerative type. A significant reduction of active TE cells and of OKT4 positive cells (helper/inducer phenotype) and increase of OKT8 positive cells (suppressor/cytotoxic phenotype) was observed in peripheral blood of all patients with persistent active lesions and leishmaniasis recidivans. In patients with highly ulcerated persistent lesions a low proportion of active TE cells was also demonstrated in cellular extracts from dermal tissue. The results support the data obtained in experimental leishmaniasis that lack of helper/inducer cells and generation of suppressor T cells may be responsible for the development of chronic leishmaniasis.

Tellurium species in seawater

The marine geochemistry of tellurium is unknown, being one of the few elements whose concentrations in seawater have never been reported1,2. The major problem in studying Te stems from its rarity and the poor sensitivities of most analytical methods (even its crustal abundance is still controversial3). We have developed a very sensitive method allowing accurate measurements to be made of Te(IV), Te(VI) and total Te in seawater and we present here several vertical profiles of these species, which were obtained from the ocean. The Te profiles resemble in part the behaviour of Se and in part that of Po, reflecting the position of Te between Se and Po in Group VIb of the Periodic Table. Te, like Se, is found to be present in two oxidation states, Te(VI) and Te(IV), but their relative stabilities are reversed with respect to Se4–7. Se(VI), which is thermodynamically stable, and the unstable Se(IV) both exhibit nutrient-type distributions, but the distribution of Te, like 210Po8, shows evidence of strong scavenging by marine participates, consistent with the chemical speciation of Te(VI) as a hydrosilate (Te(OH)6), similar to Po(IV)OH4), rather than as an oxyanion, like Se(VI)O2−4.

Free and bound testosterone in male heroin addicts.

The plasma levels of the active (free) fraction of testosterone (Te) and of Te Binding Globulin (TeBG) in a group of 42 heroin addicts with similar sexual difficulties were investigated for almost 2 years. Plasma levels of free Te were significantly low and TeBG were significantly high not only in the addicts with low total Te concentrations, but also in the addicts with normal values of total Te.

Load Distribution on Multielement Deformed Airfoils with Gap Effects

b Bn Bp c c The aerodynamic loading for deformed wings with elevens in subsonic flow is considered. The solution procedure falls into the potential flow category with appropriate restrictions. Lifting surface Kernel function formulation is used in which the local pressure loading for both wing and elevon is determined simultaneously and written as a summation equation. The solution procedure allows closed-form results to be obtained for the elevon hinge moments. Cases under study include gaps between wing and elevon in addition to arbitrary wing- elevon deformations. Fuselage effects and leading-edge suction are also used to apply results to a general con- figuration. Results for all cases compare very well with experimental data. Experimental data taken in a low- speed wind tunnel are presented for a cropped delta wing and rectangular elevon in which the wing-elevon gap was the primary test variable. Nomenclature aspect ratio wing span wing loading coefficients elevon loading coefficients local wing chord mean aerodynamic chord of the configuration (excluding gap length), reference length root chord of elevon tip chord of elevon section lift section hinge moment coefficient lift coefficient pitching moment coefficient about wing root chord leading edge pressure coefficient (p-px) Iq^ integral of the chordwise term of the pressure loading function, see Eq. (12) lift force on the wing freestream Mach number freestream dynamic pressure wing-elevon planform area (excluding gap area), reference area nondimensional perturbation velocity parallel to z axis Cartesian coordinates angle of attack Mach flow parameter, Vl -M2* elevon angle relative to wing (trailing edge down is positive) gap width between wing trailing edge and elevon leading edge wing leading-edge sweep angle nondimensional spanwise variable nondimensional variables, see Eq. (2) Sijibscripts E = elevon H = hinge characteristics HL = hinge line LE = leading edge nm = points or constants associated with the wing pq = points or constants associated with the elevon T = total TE = trailing edge VLE — leading-edge vortex W = wing 0 = denotes wing coordinate variables oo = freestream conditions

Diffusion enhancement due to low-energy ion bombardment during sputter etching and deposition

The effects of low-energy ion bombardment on enhancing elemental diffusion rates at both heterojunction interfaces during film deposition and over the compositionally altered layer created during sputter etching alloy targets have been considered. Depth dependent enhanced interdiffusion coefficients, expressed as D*(x)=D*(0) exp(−x/Ld), where D*(0) is more than five orders of magnitude greater than thermal diffusion values, were measured in InSb/GaSb multilayer structures deposited by multitarget bias sputering. D*(0) was determined from the amplitude u of the compositional modulation in the multilayered films (layer thicknesses between 20 and 45 Å) as measured by superlattice x-ray diffraction techniques. The value of D*(0) was found to increase from 3×10−17 to 1×10−16 cm2/sec as the applied substrate bias was increased from 0 to −75 V. However even at Va=0, the diffusion coefficient was enhanced owing to an induced substrate potential with respect to the positive space-charge region in the Ar discharge. The diffusion length of Ld of the ion bombardment created defects was ∼1000 Å. Enhanced diffusion also has a significiant effect on the altered layer thickness xe and the total sputtering time te (or ion dose) required to reach steady state during ion etching of multielement targets. The effects of using an exponentially depth dependent versus a constant value of the enhanced diffusion coefficient on calculated values of xe and te in single-phase binary alloys were considered. The results show that both xe and te are considerably larger using a depth dependent D*(x), when Ld<D*(0)/v, where v is the steady-state surface recession velocity during sputter etching. However, when Ld≳D*(0)/v, the usual case for most sputtering applications, the two solutions approach each other.