A comparison of the surface Hall and field effect mobilities indicates few, if any, surface states within ·13V of the valence band. By combining changes in the field plate voltage and a bias voltage between the surface layer and the bulk crystal, it is possible to vary independently the total number of charges in the surface channel and the effective thickness of the channel. The dependence of the surface mobility upon these parameters can be explained by a combination of enhanced lattice scattering and screened charged impurity scattering at the surface. A possible surface quantization effect is described.
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