We demonstrate several influences of a silicon probe of an atomic-force microscope on the fluorescence of single CdSe/ZnS quantum dots on a glass cover slip, measured in a confocal apertureless scanning near-field optical microscope (ANSOM): (a) probe-induced fluorescence quenching with the polarization of excitation orthogonal to probe axes; (b) changes in fluorescence enhancement as the quantum yield of a quantum dot fluctuates (the fluorescence enhancement is much larger in a low quantum yield state); (c) the probe-quantum dot optical interaction depends on very local and sometimes non-uniform optical properties of the probe; some fluorescence ANSOM images of quantum dots are asymmetrical and shifted with respect to topographical images; and (d) probe pressure, not the optical near-field, bleaches quantum dot fluorescence during vertical probe scans, or when the microscope operates in dynamic-force mode and the probe tip taps the sample. The fluorescence measurements have been done using a confocal ANSOM with 10–12% fluorescence collection efficiency under total internal reflection conditions of excitation.