Topological Interface States Research Articles

Lattice-matched heterojunctions between topological and normal insulators: A first-principles study

Gapless boundary modes at the interface between topologically distinct regions are one of the most salient manifestations of topology in physics. Metallic boundary states of time-reversal-invariant topological insulators (TIs), a realization of topological order in condensed matter, have been of much interest not only due to such a fundamental nature, but also due to their practical significance. These boundary states are immune to backscattering and localization owing to their topological origin, thereby opening up the possibility to tailor them for potential uses in spintronics and quantum computing. The heterojunction between a TI and a normal insulator (NI) is a representative playground for exploring such a topologically protected metallic boundary state and expected to constitute a building block for future electronic and spintronic solid-state devices based on TIs. Here, we report a first-principles study of two experimentally realized lattice-matched heterojunctions between TIs and NIs, ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$(0001)/InP(111) and ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$(0001)/${\mathrm{BaF}}_{2}$(111). We evaluate the band offsets at these interfaces from many-body perturbation theory within the $GW$ approximation as well as density-functional theory. Furthermore, we investigate the topological interface states, demonstrating that at these lattice-matched heterointerfaces, they are strictly localized and their helical spin textures are as well preserved as those at the vacuum-facing surfaces. These results taken together may help in designing devices relying on spin-helical metallic boundary states of TIs.

Topologically protected bound states in photonic parity-time-symmetric crystals.

Parity-time (PT)-symmetric crystals are a class of non-Hermitian systems that allow, for example, the existence of modes with real propagation constants, for self-orthogonality of propagating modes, and for uni-directional invisibility at defects. Photonic PT-symmetric systems that also support topological states could be useful for shaping and routing light waves. However, it is currently debated whether topological interface states can exist at all in PT-symmetric systems. Here, we show theoretically and demonstrate experimentally the existence of such states: states that are localized at the interface between two topologically distinct PT-symmetric photonic lattices. We find analytical closed form solutions of topological PT-symmetric interface states, and observe them through fluorescence microscopy in a passive PT-symmetric dimerized photonic lattice. Our results are relevant towards approaches to localize light on the interface between non-Hermitian crystals.

An ab initio investigation of Bi2Se3 topological insulator deposited on amorphous SiO2

We use first-principles simulations to investigate the topological properties of Bi2Se3 thin films deposited on amorphous SiO2, Bi2Se3/a-SiO2, which is a promising substrate for topological insulator (TI) based device applications. The Bi2Se3 films are bonded to a-SiO2 mediated by van der Waals interactions. Upon interaction with the substrate, the Bi2Se3 topological surface and interface states remain present, however the degeneracy between the Dirac-like cones is broken. The energy separation between the two Dirac-like cones increases with the number of Bi2Se3 quintuple layers (QLs) deposited on the substrate. Such a degeneracy breaking is caused by (i) charge transfer from the TI to the substrate and charge redistribution along the Bi2Se3 QLs, and (ii) by deformation of the QL in contact with the a-SiO2 substrate. We also investigate the role played by oxygen vacancies () on the a-SiO2, which increases the energy splitting between the two Dirac-like cones. Finally, by mapping the electronic structure of Bi2Se3/a-SiO2, we found that the a-SiO2 surface states, even upon the presence of , play a minor role on gating the electronic transport properties of Bi2Se3.

Topological interface states in multiscale spoof-insulator-spoof waveguides.

The spoof-insulator-spoof (SIS) structure can serve as a waveguide for spoof surface plasmon polaritons (spoof SPPs). If a periodic geometry modulation in the wavelength scale is introduced to the SIS waveguide, this multiscale SIS (MSIS) waveguide possesses band gaps for spoof SPPs analogous to the band gaps in a photonic crystal. Inspired by the topological interface states found in photonic crystals, we construct an interface by connecting two MSIS waveguides with different topological properties (inverted Zak phases of bulk bands). The topological interface states in the MSIS waveguides are observed experimentally. The measured decay lengths of the interface states agree excellently with the numerical results. These localized interface states may find potential applications in miniaturized microwave devices.

Electric control of the Josephson current-phase relation in a topological circuit

We study the current-phase relation of a topological ring-shape Josephson junction, where the ring structure is defined by one-dimensional topological interface states constructed in a two-dimensional honeycomb-lattice system. We show that control of the potential difference between the two ring arms can lead to a ${\ensuremath{\varphi}}_{0}$ Josephson junction. The physics origin is the superconducting electron- and holelike quasiparticles possessing a valley-dependent chirality and moving separately in the two ring arms. Our findings provide a purely electric way to consecutively manipulate the Josephson current-phase relation.

Nanoclusters of CaSe in calcium-doped Bi2Se3 grown by molecular-beam epitaxy

In calcium (Ca) doped Bi2Se3 films grown by molecular beam epitaxy, nanoclusters of CaSe are revealed by high-angle annular dark field imaging and energy dispersive x-ray spectroscopy analysis using a scanning transmission electron microscope. As the interface between the ordinary insulator CaSe and topological insulator, Bi2Se3, can host topological nontrivial interface state, this represents an interesting material system for further studies. We show by first principles total energy calculations that aggregation of Ca atoms in Bi2Se3 is driven by energy minimization and a preferential intercalation of Ca in the van der Waals gap between quintuple layers of Bi2Se3 induces reordering of atomic stacking and causes an increasing amount of stacking faults in film. The above findings also provide an explanation of less-than-expected electrical carrier (hole) concentrations in Ca-doped samples.

Quantum spin Hall effect inα−Sn/CdTe(001)quantum-well structures

The electronic and topological properties of heterovalent and heterocrystalline $\ensuremath{\alpha}$-Sn/CdTe(001) quantum wells (QWs) are studied in dependence on the thickness of $\ensuremath{\alpha}$-Sn by means of ab initio calculations. We calculate the topological ${\mathbb{Z}}_{2}$ invariants of the respective bulk crystals, which identify $\ensuremath{\alpha}$-Sn as strong three-dimensional (3D) topological insulators (TIs), whereas CdTe is a trivial insulator. We predict the existence of two-dimensional (2D) topological interface states between both materials and show that a topological phase transition from a trivial insulating phase into the quantum spin Hall (QSH) phase in the QW structures occurs at much higher thicknesses than in the HgTe case. The QSH effect is characterized by the localization, dispersion, and spin polarization of the topological interface states. We address the distinction of the 3D and 2D TI characters of the studied QW structures, which is inevitable for an understanding of the underlying quantum state of matter. The 3D TI nature is characterized by two-dimensional topological interface states, while the 2D phase exhibits one-dimensional edge states. The two different state characteristics are often intermixed in the discussion of the topology of 2D QW structures, especially, the comparison of ab initio calculations and experimental transport studies.

Solvothermal Synthesis of Lateral Heterojunction Sb2Te3/Bi2Te3 Nanoplates.

A lateral heterojunction of topological insulator Sb2Te3/Bi2Te3 was successfully synthesized using a two-step solvothermal method. The two crystalline components were separated well by a sharp lattice-matched interface when the optimized procedure was used. Inspecting the heterojunction using high-resolution transmission electron microscopy showed that epitaxial growth occurred along the horizontal plane. The semiconducting temperature-resistance curve and crossjunction rectification were observed, which reveal a staggered-gap lateral heterojunction with a small junction voltage. Quantum correction from the weak antilocalization reveals the well-maintained transport of the topological surface state. This is appealing for a platform for spin filters and one-dimensional topological interface states.

Quantized crossed-Andreev reflection in spin-valley topological insulators

We study a three-terminal spin-valley topological insulator/superconductor/insulator (TI/S/TI) device to realize perfect Cooper-pair splitting in real space. The key point is to construct a single topologically-protected interface state in each TI electrode that is valley helical and spin polarized. It is shown that only the crossed Andreev reflection of electrons is allowed when the opposite topological interface states are engineered in the two TI electrodes, but the normal reflection, local Andreev reflection, as well as the electron cotunneling are entirely prohibited. The quantized and noiseless crossed Andreev reflection is protected by the bulk topological invariants of the TI electrodes and persists in a very long junction $(L>{\ensuremath{\xi}}_{s})$ as well as in moderate disorders.

Topological states of Sb thin films contacted by a single sheet of heterogeneous atoms

We found that thin antimony films contacted by a single layer of a variety of atoms can form topological surface and interface states in the gap of bulk energy bands that preserve time-reversal symmetry. Using density functional calculation, we have included bismuth, graphene, boron-nitride and boron-doped graphene layers in our investigation. In most cases, Dirac cones are found in the band structures and spin textures indicate no back scattering of conduction electrons. In the case of a BC3 layer deposited on an Sb film as thin as three bilayers, a Dirac cone consisting mostly of interface states is formed close to the Fermi level. If the composite is gated by an adjustable voltage, electron transport can switch between two modes of opposite spins, and between one or two modes of 100% spin polarization. The results should be very useful in the applications of topological conduction and spintronics.

Multiple topological interface states in silicene

Silicene is a 2D topological insulator due to its fairly large spin–orbital interaction and features a buckled lattice structure that allows one to control the effective mass of Dirac electrons by a perpendicular electric field. We propose the use of a spatially alternative electric field to generate multiple topologically-protected interface states (TIS) in the bulk silicene. It is shown that when the valley-dependent electron mass (defining the Chern number of an insulating bulk silicene) changes its sign or discontinues due to spatial variation of the electric field, multiple TIS appear in the insulating bulk silicene. The TIS come from the K and valleys and sustain dissipationless valley or spin–valley-dependent currents, which are immune to both the valley-conservation and spin-observation scattering. It is also found that the coupling among TIS due to spatial electron tunneling excites the TIS, and whether there is an excitation gap or not depends on the even or odd TIS number. Our findings may shed light on manufacturing topological electron devices.

Dirac cone shift of a passivated topological Bi2Se3interface state

Gated terahertz cyclotron resonance measurements on epitaxial Bi2Se3 thin films capped with In2Se3 enable the first spectroscopic characterization of a single topological interface state from the vicinity of the Dirac point to above the conduction band edge. A precipitous drop in the scattering rate with Fermi energy is observed that is interpreted as the surface state decoupling from bulk states and evidence of a shift of the Dirac point towards mid-gap. Near the Dirac point, potential fluctuations of 50 meV are deduced from an observed loss of differential optical spectral weight near the Dirac point. Potential fluctuations are reduced by a factor of two at higher surface Fermi levels in the vicinity of the conduction band edge inferred from the width of the scattering rate step. The passivated topological interface state attains a high mobility of 3500 cm2/Vsec near the Dirac point.

Manipulation of Topological States and the Bulk Band Gap Using Natural Heterostructures of a Topological Insulator

We have performed angle-resolved photoemission spectroscopy on (PbSe)(5)(Bi(2)Se(3))(3m), which forms a natural multilayer heterostructure consisting of a topological insulator and an ordinary insulator. For m=2, we observed a gapped Dirac-cone state within the bulk band gap, suggesting that the topological interface states are effectively encapsulated by block layers; furthermore, it was found that the quantum confinement effect of the band dispersions of Bi(2)Se(3) layers enhances the effective bulk band gap to 0.5 eV, the largest ever observed in topological insulators. For m=1, the Dirac-like state is completely gone, suggesting the disappearance of the band inversion in the Bi(2)Se(3) unit. These results demonstrate that utilization of naturally occurring heterostructures is a new promising strategy for manipulating the topological states and realizing exotic quantum phenomena.