Topological Insulator Research Articles

Performance of Low-Dimensional Solid Room-Temperature Photodetectors-Critical View.

In the last twenty years, nanofabrication progress has allowed for the emergence of a new photodetector family, generally called low-dimensional solids (LDSs), among which the most important are two-dimensional (2D) materials, perovskites, and nanowires/quantum dots. They operate in a wide wavelength range from ultraviolet to far-infrared. Current research indicates remarkable advances in increasing the performance of this new generation of photodetectors. The published performance at room temperature is even better than reported for typical photodetectors. Several articles demonstrate detectivity outperforming physical boundaries driven by background radiation and signal fluctuations. This study attempts to explain these peculiarities. In order to achieve this goal, we first clarify the fundamental differences in the photoelectric effects of the new generation of photodetectors compared to the standard designs dominating the commercial market. Photodetectors made of 2D transition metal dichalcogenides (TMDs), quantum dots, topological insulators, and perovskites are mainly considered. Their performance is compared with the fundamental limits estimated by the signal fluctuation limit (in the ultraviolet region) and the background radiation limit (in the infrared region). In the latter case, Law 19 dedicated to HgCdTe photodiodes is used as a standard reference benchmark. The causes for the performance overestimate of the different types of LDS detectors are also explained. Finally, an attempt is made to determine their place in the global market in the long term.

Inverse design of phononic topological pumping in continuous solids

Topological insulators have been widely studied for their unique properties, particularly their ability to propagate energy with minimal losses in a manner that is robust to structural defects. More recently, topological pumping, which provides a mechanism to transport energy from one location to another in a structure without the need for direct coupling between the locations, has emerged as a phenomena of interest. However, previous studies on topological pumping of phonons have been performed without developing an understanding of how the efficiency of the pumping, as well as control over the pumping pathway in continuous solids, can be systematically controlled. Therefore, in this work we introduce a novel framework for the inverse design of continuous structures that can exhibit topological pumping of phonons, that is based on two key steps: (I) shape design of unit cells that not only exhibit topologically non-trivial edge states, but whose edge states span a wide range of phase values and wavenumbers at the excitation frequency to achieve a robust pumping effect; (II) optimizing the functional form to enable nonlinear modulation of the phase, which enables control both over the pumping path, and also the efficiency of the energy transport along the desired pumping pathway. Using this approach, we are able to establish connections between the dynamical properties of the unit cell, and various properties that impact the pumping efficiency, including the bandgap width, wavevector range, unit cell truncation, and the path of the phase modulation. We further demonstrate the ability to perform pumping for both out-of-plane and in-plane elastic waves, as well as for quantum valley Hall-based topological insulators.

Incommensurate magnetic order in an axion insulator candidate EuIn2As2 investigated by NMR measurement

Magnetic topological insulators exhibit unique electronic states due to the interplay between the electronic topology and the spin structure. The antiferromagnetic metal EuIn2As2 is a prominent candidate material in which exotic topological phases, including an axion insulating state, are theoretically predicted depending on the magnetic structure of the Eu2+ moments. Here, we report experimental results of the nuclear magnetic resonance (NMR) measurements of all the nuclei in EuIn2As2 to investigate the coupling between the magnetic moments in the Eu ions and the conduction electrons in In2As2 layers and the magnetic structure. The 75As and 115In NMR spectra observed at zero external magnetic fields reveal the appearance of internal fields of 4.9 and 3.6 T, respectively, at the lowest temperature, suggesting a strong coupling between the conduction electrons in the In2As2 layer and the ordered magnetic moments in the Eu ions. The 75As NMR spectra under in-plane external magnetic fields show broad distributions of the internal fields produced by an incommensurate fan-like spin structure which turns into a forced ferromagnetic state above 0.7 T. We propose a spin reorientation process that an incommensurate helical state at zero external magnetic field quickly changes into a fan state by applying a slight magnetic field.

Generic Approach to Intrinsic Magnetic Second-Order Topological Insulators via Inverted p-d Orbitals.

The integration of intrinsically magnetic and topologically nontrivial two-dimensional materials holds tantalizing prospects for exotic quantum anomalous Hall insulators and magnetic second-order topological insulators (SOTIs). Compared with their well-studied nonmagnetic counterparts, the pursuit of intrinsic magnetic SOTIs remains limited. In this work, we address this gap by focusing on p-d orbitals inversion, a fundamental but often overlooked phenomena in the construction of topological materials. We begin by developing a theoretical framework to elucidate p-d orbital inversion through a combined density-functional theory calculation and Wannier downfolding. Subsequently we showcase the generality of this concept in realizing ferromagnetism SOTIs by identifying two real materials with distinct lattices: 1T-VS2 monolayer in a hexagonal lattice and CrAs monolayer in a square lattice. We further compare it with other mechanisms requiring spin-orbit coupling and explore the similarities to topological Kondo insulators. Our findings establish a generic pathway toward intrinsic magnetic SOTIs.

Growth Conditions and Interfacial Misfit Array in SnTe (111) Films Grown on InP (111)A Substrates by Molecular Beam Epitaxy.

Tin telluride (SnTe) is an IV-VI semiconductor with a topological crystalline insulator band structure, high thermoelectric performance, and in-plane ferroelectricity. Despite its many applications, there has been little work focused on understanding the growth mechanisms of SnTe thin films. In this manuscript, we investigate the molecular beam epitaxy synthesis of SnTe (111) thin films on InP (111)A substrates. We explore the effect of substrate temperature, Te/Sn flux ratio, and growth rate on the film quality. Using a substrate temperature of 340 °C, a Te/Sn flux ratio of 3, and a growth rate of 0.48 Å/s, fully coalesced and single crystalline SnTe (111) epitaxial layers with X-ray rocking curve full-width-at-half-maxima of 0.09° and root-mean-square surface roughness as low as 0.2 nm have been obtained. Despite the 7.5% lattice mismatch between the SnTe (111) film and the InP (111)A substrate, reciprocal space mapping indicates that the 15 nm SnTe layer is fully relaxed. We show that a periodic interfacial misfit (IMF) dislocation array forms at the SnTe/InP heterointerface, where each IMF dislocation is separated by 14 InP lattice sites/13 SnTe lattice sites, providing rapid strain relaxation and yielding the high quality SnTe layer. This is the first report of an IMF array forming in a rock-salt on zinc-blende material system and at an IV-VI on III-V heterointerface, and highlights the potential for SnTe as a buffer layer for epitaxial telluride film growth. This work represents an important milestone in enabling the heterointegration between IV-VI and III-V semiconductors to create multifunctional devices.

Unveiling correlated two-dimensional topological insulators through fermionic tensor network states—classification, edge theories and variational wavefunctions

The study of topological band insulators has revealed fascinating phases characterized by band topology indices and anomalous boundary modes protected by global symmetries. In strongly correlated systems, where the traditional notion of electronic bands becomes obsolete, it has been established that topological insulator phases persist as stable phases, separate from the trivial insulators. However, due to the inability to express the ground states of such systems as Slater determinants, the formulation of generic variational wave functions for numerical simulations is highly desirable. In this paper, we tackle this challenge for two-dimensional topological insulators by developing a comprehensive framework for fermionic tensor network states. Starting from simple assumptions, we obtain possible sets of tensor equations for any given symmetry group, capturing consistent relations governing symmetry transformation rules on tensor legs. We then examine the connection between these tensor equations andnon-chiraltopological insulators by constructing edge theories and extracting quantum anomaly data from each set of tensor equations. By exhaustively exploring all possible sets of equations, we achieve a systematic classification of non-chiral topological insulator phases. Imposing the solutions of a given set of equations onto local tensors, we obtain generic variational wavefunctions for the corresponding topological insulator phases. Our methodology provides an important step toward simulating topological insulators in strongly correlated systems. We discuss the limitations and potential generalizations of our results, paving the way for further advancements in this field.

Broadband acoustic pseudospin topological states based on the reverse spin-orbit coupling in generalized insulators

Acoustic topological insulators have the excellent characteristic of the pseudospin-dependent one-way transmission of sound edge states immune to backscattering. We realize the broadband acoustic pseudospin topological edge states with subwavelength generalized topological insulators, which is achieved by reverse pseudospin-orbit coupling. The subwavelength band and broadband nontrivial bandgap can be achieved by adjusting the topological structure of the scatterers and introducing resonators. The results demonstrate that the resonator can significantly reduce the frequencies of p-states and d-states by introducing resonance scattering; the scattering size and rotation angles change the frequencies of p-states and d-states in opposite directions by adjusting the distribution of the sound field. Then, we experimentally realize the pseudospin-dependent one-way transmission of sound edge states along the interface separating phononic crystals with distinct topological phases. Our research provides a systematic scheme for the design of acoustic topological insulators with versatile applications.

Dual-band topological refractive properties in solid phononic crystals

The lossless transmission of topological edge states and the robustness of defect immunity make topological refractive materials have important application prospects in acoustic communication and integrated acoustic devices. However, most topological refractive materials only have a single operating frequency band, which obviously limits their application in multi-band and multi-function devices. Therefore, a phononic crystal with dual-frequency topological states is designed in this paper, and its dual-topological refractive properties are investigated and discussed. The existence of in-plane bulk elastic wave edge states is demonstrated by calculating the band structure of supercell comprising phononic crystals with different topological phases. Numerical simulations of the constructed acoustic topological waveguide are performed and negative refraction is observed at the low bandgap while zero refraction is observed at the high bandgap. Then, the topological zero refraction is investigated for different incidence angles. The designed dual-band acoustic topological insulator has potential applications in multi-band acoustic communication and acoustic information processing.

Bosonization of 2+1 dimensional fermions on the surface of topological insulators

Three-dimensional topological insulators can be described by an effective field theory involving two ‘hydrodynamic’ Abelian gauge fields. The action contains a bulk topological BF term and a surface term, called loop model. This describes the massless 2+1 dimensional excitations and provides them with a semiclassical, yet non-trivial conformal invariant dynamics. Given that topological insulators are originally fermionic, this physical setting is ideal for realizing the bosonization of massless fermions in terms of gauge fields. Building on earlier analyses of the loop model, we find that fermions belong to the solitonic spectrum and can be described by Wilson lines, through the generalization of 1+1 dimensional vertex operators. Their correlation functions agree with conformal invariance. The bosonic loop model is then mapped into a fermionic theory by using the general construction of fermionic topological phases described in the literature. It requires the identification of the characteristic one-form ℤ2 symmetry of the bosonic theory and its gauging, which originates the fermion number (−1)F, the spin sectors and the time reversal symmetry obeying T\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$ \\mathcal{T} $$\\end{document}2 = (−1)F. These results are detailed for the effective action and the partition function on the geometry S2 × S1.

Quantum geometry quadrupole-induced third-order nonlinear transport in antiferromagnetic topological insulator MnBi2Te4

The study of quantum geometry effects in materials has been one of the most important research directions in recent decades. The quantum geometry of a material is characterized by the quantum geometric tensor of the Bloch states. The imaginary part of the quantum geometry tensor gives rise to the Berry curvature while the real part gives rise to the quantum metric. While Berry curvature has been well studied in the past decades, the experimental investigation on the quantum metric effects is only at its infancy stage. In this work, we measure the nonlinear transport of bulk MnBi2Te4, which is a topological anti-ferromagnet. We found that the second order nonlinear responses are negligible as required by inversion symmetry, the third-order nonlinear responses are finite. The measured third-harmonic longitudinal (Vxx3ω\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${V}_{{xx}}^{3\\omega }$$\\end{document}) and transverse (Vxy3ω\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${V}_{{xy}}^{3\\omega }$$\\end{document}) voltages with frequency 3ω\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\omega$$\\end{document}, driven by an a.c. current with frequency ω\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\omega$$\\end{document}, show an intimate connection with magnetic transitions of MnBi2Te4 flakes. Their magnitudes change abruptly as MnBi2Te4 flakes go through magnetic transitions from an antiferromagnetic state to a canted antiferromagnetic state and to a ferromagnetic state. In addition, the measured Vxx3ω\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${V}_{{xx}}^{3\\omega }$$\\end{document} is an even function of the applied magnetic field B while Vxy3ω\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${V}_{{xy}}^{3\\omega }$$\\end{document} is odd in B. Amazingly, the field dependence of the third-order responses as a function of the magnetic field suggests that Vxx3ω\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${V}_{{xx}}^{3\\omega }$$\\end{document} is induced by the quantum metric quadrupole and Vxy3ω\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${V}_{{xy}}^{3\\omega }$$\\end{document} is induced by the Berry curvature quadrupole. Therefore, the quadrupoles of both the real and the imaginary part of the quantum geometry tensor of bulk MnBi2Te4 are revealed through the third order nonlinear transport measurements. This work greatly advanced our understanding on the connections between the higher order moments of quantum geometry and nonlinear transport.

Incognizant 1T/1H Charge-Density-Wave Phases in Monolayer NbTe2.

While experimental realization of multiple charge-density waves (CDWs) has been ascribed to monolayer 1T-NbTe2, their atomic structures are still largely unclear, preventing a deep understanding of their novel electronic structures. Here, comparing first-principles-calculated orbital textures with reported STM measurements, we successfully identify multiple CDWs in monolayer NbTe2. Surprisingly, we reveal that both 1T/1H phases could exist in monolayer NbTe2, which was incognizant before. Particularly, we find that the experimentally observed 4 × 1 and 4 × 4 CDWs could be attributed to 1H stacking, while the observed phase could possess 1T stacking. The existence of 1T/1H phases results in competition between CDW, spin-density wave (SDW), and ferromagnetism in 1H stacking under an external field and results in CDW-induced quantum phase transitions from a Kramers-Weyl fermion to a topological insulator in 1T stacking. Our study suggests NbTe2 as an exotic platform to investigate the interplay between CDW, SDW, and topological phases, which are largely unexplored in current experiments.

Nonvolatile ferroelectric control of electronic properties of Bi2Te3

Abstract Nonvolatile electric-field control of the unique physical characteristics of topological insulators (TIs) is essential for fundamental research and development of practical electronic devices. Electrically tunable transport properties through electrostatic gates have been extensively investigated. However, the relatively weak and volatile tunability limits its practical applications in spintronics. Here, we demonstrate the nonvolatile electric-field control of Bi2Te3 transport properties via constructing ferroelectric Rashba architectures, i.e., 2D Bi2Te3/α-In2Se3 ferroelectric field effect transistors. Through switching the polarization states of the α-In2Se3, the Fermi level, resistance, Fermi wave vector, carrier mobility, carrier density, and magnetoresistance (MR) of the Bi2Te3 film can be effectively modulated. Importantly, a shift of Fermi level toward band gap with surface state occurs as switching to negative polarization state, the contribution of the surface state to the conductivity increases, thereby increasing carrier mobility and electron coherence length significantly, and resulting in enhanced WAL effect. These results provide a nonvolatile electric-field control method to tune the electronic properties of TI and can further extend to the quantum transport properties.

Intrinsic second-order topological insulators produced by triangular Kekulé distortion in honeycomb lattices

Intrinsic second-order topological insulators produced by triangular Kekulé distortion in honeycomb lattices

Long-range-interacting topological photonic lattices breaking channel-bandwidth limit

The presence of long-range interactions is crucial in distinguishing between abstract complex networks and wave systems. In photonics, because electromagnetic interactions between optical elements generally decay rapidly with spatial distance, most wave phenomena are modeled with neighboring interactions, which account for only a small part of conceptually possible networks. Here, we explore the impact of substantial long-range interactions in topological photonics. We demonstrate that a crystalline structure, characterized by long-range interactions in the absence of neighboring ones, can be interpreted as an overlapped lattice. This overlap model facilitates the realization of higher values of topological invariants while maintaining bandgap width in photonic topological insulators. This breaking of topology-bandgap tradeoff enables topologically protected multichannel signal processing with broad bandwidths. Under practically accessible system parameters, the result paves the way to the extension of topological physics to network science.

Observation of giant non-reciprocal charge transport from quantum Hall states in a topological insulator.

Symmetry breaking in quantum materials is of great importance and can lead to non-reciprocal charge transport. Topological insulators provide a unique platform to study non-reciprocal charge transport due to their surface states, especially quantum Hall states under an external magnetic field. Here we report the observation of non-reciprocal charge transport mediated by quantum Hall states in devices composed of the intrinsic topological insulator Sn-Bi1.1Sb0.9Te2S, which is attributed to asymmetric scattering between quantum Hall states and Dirac surface states. A giant non-reciprocal coefficient of up to 2.26 × 105 A-1 is found. Our work not only reveals the properties of non-reciprocal charge transport of quantum Hall states in topological insulators but also paves the way for future electronic devices.

Research on Quantum State Implementation Based on Topological Insulators

Abstract This paper first introduces the mainstream technology route of quantum computing. The analysis provides the role and advantages of topological insulators in quantum computing, such as providing stable quantum bits, enhancing the coherence and non-locality of quantum bits, and enabling the transmission of quantum information and entanglement allocation. This paper then proposes a quantum state implementation scheme based on Bi2Se3, based on the characteristics and advantages of the quantum Hall effect of topological insulators. It includes calculating the eigenstates of the Hamiltonian of topological insulators, obtaining the spatial distribution of wave functions, and generating a quantum bit platform based on topological insulators. A quantum state implementation system based on topological insulator (Bi2Se3) was constructed, and the system framework and reference configuration were provided. The solution presented in this article is an important research achievement in topological quantum computing, providing more possibilities for the implementation of feasible fault-tolerant quantum computer prototypes.

Higher-order topological phase with subsystem symmetries

Abstract A wide variety of higher-order symmetry-protected topological phases (HOSPT) with gapless corners or hinges have been proposed as descendants of topological crystalline insulators protected by spatial symmetry. In this work, we address a new class of higher-order topological states that do not require crystalline symmetries but instead rely on subsystem symmetry for protection. We propose several strongly interacting models with gapless hinges or corners based on a decorated hinge-wall condensate picture. The hinge-wall, which appears as the defect configuration of a Z 2 paramagnet, is decorated with a lower-dimensional SPT state. Such a unique hinge-wall decoration structure leads to gapped surfaces separated by gapless hinges. The non-trivial nature of the hinge modes can be captured by a 1 + 1 D conformal field theory with a Wess–Zumino–Witten term. Moreover, we establish a no-go theorem to demonstrate the ungappable nature of the hinges by making a connection between the generalized Lieb–Schultz–Mattis theorem and the boundary anomaly of the HOSPT state. This universal correspondence engenders a comprehensive criterion to determine the existence of HOSPT under certain symmetries, regardless of the microscopic Hamiltonian.

Three-dimensional topological crystalline insulator without spin–orbit coupling in nonsymmorphic photonic metacrystal

Abstract By including certain point group symmetry in the classification of band topology, Fu proposed a class of three-dimensional topological crystalline insulators (TCIs) without spin–orbit coupling in 2011. In Fu’s model, surface states (if present) doubly degenerate at Γ ¯ and M ¯ when time-reversal and C 4 symmetries are preserved. The analogs of Fu’s model with surface states quadratically degenerate at M ¯ are widely studied, while surface states with quadratic degeneracy at Γ ¯ are rarely reported. In this study, we propose a three-dimensional TCI without spin–orbit coupling in a judiciously designed nonsymmorphic photonic metacrystal. The surface states of photonic TCIs exhibit quadratic band degeneracy in the (001) surface Brillouin zone (BZ) center ( Γ ¯ point). The gapless surface states and their quadratic dispersion are protected by C 4 and time-reversal symmetries, which correspond to the nontrivial band topology characterized by Z 2 topological invariant. Moreover, the surface states along lines from Γ ¯ to the (001) surface BZ boundary exhibit zigzag feature, which is interpreted from symmetry perspective by building composite operators constructed by the product of glide symmetries with time-reversal symmetry. The metacrystal array surrounded with air possesses high order hinge states with electric fields highly localized at the hinge that may apply to optical sensors. The gapless surface states and hinge states reside in a clean frequency bandgap. The topological surface states emerge at the boundary of the metacrystal and perfect electric conductor (PEC), which provide a pathway for topologically manipulating light propagation in photonic devices.

Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition

Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition

Room-Temperature Band-Aligned Infrared Heterostructures for Integrable Sensing and Communication.

The demand for miniaturized and integrated multifunctional devices drives the progression of high-performance infrared photodetectors for diverse applications, including remote sensing, air defense, and communications, among others. Nonetheless, infrared photodetectors that rely solely on single low-dimensional materials often face challenges due to the limited absorption cross-section and suboptimal carrier mobility, which can impair sensitivity and prolong response times. Here, through experimental validation is demonstrated, precise control over energy band alignment in a type-II van der Waals heterojunction, comprising vertically stacked 2D Ta2NiSe5 and the topological insulator Bi2Se3, where the configuration enables polarization-sensitive, wide-spectral-range photodetection. Experimental evaluations at room temperature reveal that the device exhibits a self-powered responsivity of 0.48 A·W-1, a specific directivity of 3.8 × 1011 cm·Hz1/2·W-1, a response time of 151 µs, and a polarization ratio of 2.83. The stable and rapid photoresponse of the device underpins the utility in infrared-coded communication and dual-channel imaging, showing the substantial potential of the detector. These findings articulate a systematic approach to developing miniaturized, multifunctional room-temperature infrared detectors with superior performance metrics and enhanced capabilities for multi-information acquisition.