Topological Insulator Materials Research Articles

Robustness of helical edge states in topological insulators

Topological insulators (TIs) are materials having an energy band gap in the bulk and conducting helical electronic states on the surface. The helical states are protected by time-reversal symmetry and thus are expected to be robust against static disorder scattering. In this work we report an atomistic first principles analysis of disorder scattering in two-probe transport junctions made of three-dimensional TI material Bi${}_{2}$Se${}_{3}$. The robustness of the device against disorder scattering is determined quantitatively. Examining many different scattering configurations, a general trend emerges on how strong is the perturbing potential and how it is spatially distributed so that it can derail the helical states on the Bi${}_{2}$Se${}_{3}$ surfaces.

Quantized Hall Effect and Shubnikov–de Haas Oscillations in Highly DopedBi2Se3: Evidence for Layered Transport of Bulk Carriers

Bi2Se3 is an important semiconductor thermoelectric material and a prototype topological insulator. Here we report observation of Shubnikov-de Hass oscillations accompanied by quantized Hall resistances (R(xy)) in highly doped n-type Bi2Se3 with bulk carrier concentrations of few 10(19) cm(-3). Measurements under tilted magnetic fields show that the magnetotransport is 2D-like, where only the c-axis component of the magnetic field controls the Landau level formation. The quantized step size in 1/R(xy) is found to scale with the sample thickness, and average ~e(2)/h per quintuple layer. We show that the observed magnetotransport features do not come from the sample surface, but arise from the bulk of the sample acting as many parallel 2D electron systems to give a multilayered quantum Hall effect. In addition to revealing a new electronic property of Bi2Se3, our finding also has important implications for electronic transport studies of topological insulator materials.

Weyl semimetal with broken time reversal and inversion symmetries

Weyl semimetal is a new topological state of matter, characterized by the presence of nondegenerate band-touching nodes, separated in momentum space, in its bandstructure. Here we discuss a particular realization of a Weyl semimetal: a superlattice heterostructure, made of alternating layers of topological insulator (TI) and normal insulator (NI) material, introduced by one of us before. The Weyl node splitting is achieved most easily in this system by breaking time-reversal (TR) symmetry, for example by magnetic doping. If, however, spatial inversion (I) symmetry remains, the Weyl nodes will occur at the same energy, making it possible to align the Fermi energy simultaneously with both nodes. The goal of this work is to explore the consequences of breaking the I symmetry in this system. We demonstrate that, while this generally moves the Weyl nodes to different energies, thus eliminating nodal semimetal and producing a state with electron and hole Fermi surfaces, the topological properties of the Weyl semimetal state, i.e. the chiral edge states and the corresponding Hall conductivity, survive for moderate I symmetry breaking. Moreover, we demonstrate that a new topological phenomenon arises in this case, if an external magnetic field along the growth direction of the heterostructure is applied. Namely, this leads to an equilibrium dissipationless current, flowing along the direction of the field, whose magnitude is proportional to the energy difference between the Weyl nodes and to the magnetic field, with a universal coefficient, given by a combination of fundamental constants.

Actinide Topological Insulator Materials with Strong Interaction

Topological band insulators have recently been discovered in spin-orbit coupled two-and three-dimensional systems. We theoretically predict a class of topological insulators where interaction effects play a dominant role. In actinide elements, simple rocksalt compounds formed by Pu and Am lie on the boundary between metals and insulators. We show that interaction drives a quantum phase transition to a topological insulator phase with a single Dirac cone on the surface. These putative topological insulators may provide a setting for both applied and fundamental investigation.

The Coexistence of Superconductivity and Topological Order in the Bi 2 Se 3 Thin Films

Three-dimensional topological insulators (TIs) are characterized by their nontrivial surface states, in which electrons have their spin locked at a right angle to their momentum under the protection of time-reversal symmetry. The topologically ordered phase in TIs does not break any symmetry. The interplay between topological order and symmetry breaking, such as that observed in superconductivity, can lead to new quantum phenomena and devices. We fabricated a superconducting TI/superconductor heterostructure by growing dibismuth triselenide (Bi(2)Se(3)) thin films on superconductor niobium diselenide substrate. Using scanning tunneling microscopy and angle-resolved photoemission spectroscopy, we observed the superconducting gap at the Bi(2)Se(3) surface in the regime of Bi(2)Se(3) film thickness where topological surface states form. This observation lays the groundwork for experimentally realizing Majorana fermions in condensed matter physics.

Revelation of Topological Surface States in Bi2Se3 Thin Films by In Situ Al Passivation

Topological insulators (TIs) are extraordinary materials that possess massless, Dirac-like topological surface states in which backscattering is prohibited due to the strong spin-orbit coupling. However, there have been reports on degradation of topological surface states in ambient conditions, which presents a great challenge for probing the original topological surface states after TI materials are prepared. Here, we show that in situ Al passivation inside a molecular beam epitaxy (MBE) chamber could inhibit the degradation process and reveal the pristine topological surface states. Dual evidence from Shubnikov-de Hass (SdH) oscillations and weak antilocalization (WAL) effect, originated from the π Berry phase, suggests that the helically spin-polarized surface states are well preserved by the proposed in situ Al passivation. In contrast, we show the degradation of surface states for the unpassivated control samples, in which the 2D carrier density is increased 39.2% due to ambient n-doping, the SdH oscillations are completely absent, and a large deviation from WAL is observed.

Pressure-Induced Disordered Substitution Alloy in Sb2Te3

A new type of disordered substitution alloy of Sb and Te at above 15.1 GPa was discovered by performing in situ high-pressure angle-dispersive X-ray diffraction experiments on antimony telluride (Sb(2)Te(3)), a topological insulator and thermoelectric material, at room temperature. In this disordered substitution alloy, Sb(2)Te(3) crystallizes into a monoclinic structure with the space group C2/m, which is different from the corresponding high-pressure phase of the similar isostructural compound Bi(2)Te(3). Above 19.8 GPa, Sb(2)Te(3) adopts a body-centered-cubic structure with the disordered atomic array in the crystal lattice. The in situ high-pressure experiments down to about 13 K show that Sb(2)Te(3) undergoes the same phase-transition sequence with increasing pressure at low temperature, with almost the same phase-transition pressures.

OptimizingBi2−xSbxTe3−ySeysolid solutions to approach the intrinsic topological insulator regime

To optimize the bulk-insulating behavior in the topological insulator materials having a tetradymite structure, we have synthesized and have characterized single-crystal samples of ${\mathrm{Bi}}_{2\text{\ensuremath{-}}x}{\mathrm{Sb}}_{x}{\mathrm{Te}}_{3\text{\ensuremath{-}}y}{\mathrm{Se}}_{y}$ solid solution at various compositions. We have elucidated that there are a series of intrinsic compositions where the acceptors and donors compensate each other and present a maximal bulk-insulating behavior. At such compositions, the resistivity can become as large as several $\ensuremath{\Omega}$ cm at low temperatures, and one can infer the role of the surface-transport channel in the nonlinear Hall effect. In particular, the composition of ${\mathrm{Bi}}_{1.5}{\mathrm{Sb}}_{0.5}{\mathrm{Te}}_{1.7}{\mathrm{Se}}_{1.3}$ achieves the lowest bulk carrier density and appears to be best suited for surface-transport studies.

Ambipolar field effect in the ternary topological insulator (BixSb1–x)2Te3 by composition tuning

Topological insulators exhibit a bulk energy gap and spin-polarized surface states that lead to unique electronic properties, with potential applications in spintronics and quantum information processing. However, transport measurements have typically been dominated by residual bulk charge carriers originating from crystal defects or environmental doping, and these mask the contribution of surface carriers to charge transport in these materials. Controlling bulk carriers in current topological insulator materials, such as the binary sesquichalcogenides Bi2Te3, Sb2Te3 and Bi2Se3, has been explored extensively by means of material doping and electrical gating, but limited progress has been made to achieve nanostructures with low bulk conductivity for electronic device applications. Here we demonstrate that the ternary sesquichalcogenide (Bi(x)Sb(1-x))2Te3 is a tunable topological insulator system. By tuning the ratio of bismuth to antimony, we are able to reduce the bulk carrier density by over two orders of magnitude, while maintaining the topological insulator properties. As a result, we observe a clear ambipolar gating effect in (Bi(x)Sb(1-x))2Te3 nanoplate field-effect transistor devices, similar to that observed in graphene field-effect transistor devices. The manipulation of carrier type and density in topological insulator nanostructures demonstrated here paves the way for the implementation of topological insulators in nanoelectronics and spintronics.

Stable NontrivialZ2Topology in Ultrathin Bi (111) Films: A First-Principles Study

Recently, there have been intense efforts in searching for new topological insulator materials. Based on first-principles calculations, we find that all the ultrathin Bi (111) films are characterized by a nontrivial Z(2) number independent of the film thickness, without the odd-even oscillation of topological triviality as commonly perceived. The stable nontrivial Z(2) topology is retained by the concurrent band gap inversions at multiple time-reversal-invariant k points with the increasing film thickness and associated with the intermediate interbilayer coupling of the Bi film. Our calculations further indicate that the presence of metallic surface states in thick Bi (111) films can be effectively removed by surface adsorption.

Topological insulator nanostructures: Materials synthesis, Raman spectroscopy, and transport properties

Nanostructured topological insulator materials such as ultrathin films, nanoplates, nanowires, and nanoribbons are attracting much attention for fundamental research as well as potential applications in low-energy dissipation electronics, spintronics, thermoelectrics, magnetoelectrics, and quantum computing due to their extremely large surface-to-volume ratios and exotic metallic edge/surface states. Layered Bi2Se3 and Bi2Te3 serve as reference topological insulator materials with a large nontrivial bulk gap up to 0.3 eV (equivalent to 3600 K) and simple single-Dirac-cone surface states. In this mini-review, we present an overview of recent advances in nanostructured topological insulator Bi2Se3 and Bi3Te3 from the viewpoints of controlled synthesis and physical properties. We summarize our recent achievements in the vapor-phase synthesis and structural characterization of nanostructured topological insulator Bi2Se3 and Bi2Te3, such as nanoribbons and ultrathin nanoplates.We also demonstrate the evolution of Raman spectra with the number of few-layer topological insulators, as well as the transport measurements that have succeeded in accessing the surface conductance and surface state manipulations in the device of topological insulator nanostructures.

Engineering ap+ipsuperconductor: Comparison of topological insulator and Rashba spin-orbit-coupled materials

We compare topological insulator materials and Rashba coupled surfaces as candidates for engineering p+ip superconductivity. Specifically, in each type of material we examine 1) the limitations to inducing superconductivity by proximity to an ordinary s-wave superconductor, and 2) the robustness of the resulting superconductivity against disorder. We find that topological insulators have strong advantages in both regards: there are no fundamental barriers to inducing superconductivity, and the induced superconductivity is immune to disorder. In contrast, for Rashba coupled quantum wires or surface states, the the achievable gap from induced superconductivity is limited unless the Rashba coupling is large. Furthermore, for small Rashba coupling the induced superconductivity is strongly susceptible to disorder. These features pose serious difficulties for realizing p+ip superconductors in semiconductor materials due to their weak spin-orbit coupling, and suggest the need to seek alternatives. Some candidate materials are discussed.

Dirac cone engineering in Bi2Se3thin films

In spite of the clear surface-state Dirac cone features in bismuth-based three-dimensional strong topological insulator materials, the Dirac point known as the Kramers point and the topological transport regime are located near the bulk valence band maximum. As a result of a nonisolated Dirac point, the topological transport regime cannot be acquired and there possibly exist scattering channels between surface and bulk states as well. We show that an ideal and isolated Dirac cone is realized in a slab geometry made of Bi${}_{2}$Se${}_{3}$ with appropriate substitutions of surface Se atoms. As an extension of Dirac cone engineering, we also investigate Bi${}_{2}$Se${}_{3}$ ultrathin films with asymmetric or magnetic substitutions of the surface atoms, which can be linked to spintronics applications.

Bulk metals with helical surface states

In the flurry of experiments looking for topological insulator materials, it has been recently discovered that some bulk metals very close to topological insulator electronic states, support the same topological surface states that are the defining characteristic of the topological insulator. First observed in spin-polarized ARPES in Sb (D. Hsieh et al. Science 323, 919 (2009)), the helical surface states in the metallic systems appear to be robust to at least mild disorder. We present here a theoretical investigation of the nature of these "helical metals" - bulk metals with helical surface states. We explore how the surface and bulk states can mix, in both clean and disordered systems. Using the Fano model, we discover that in a clean system, the helical surface states are \emph{not} simply absorbed by hybridization with a non-topological parasitic metallic band. Instead, they are pushed away from overlapping in momentum and energy with the bulk states, leaving behind a finite-lifetime surface resonance in the bulk energy band. Furthermore, the hybridization may lead in some cases to multiplied surface state bands, in all cases retaining the helical characteristic. Weak disorder leads to very similar effects - surface states are pushed away from the energy bandwidth of the bulk, leaving behind a finite-lifetime surface resonance in place of the original surface states.

1/f noise in conducting channels of topological insulator materials

AbstractWe report results of investigation of the low‐frequency excess noise in device channels made from topological insulators – a new class of materials with a bulk insulating gap and conducting surface states. The thin‐film Bi2Se3 samples were prepared by the ‘graphene‐like’ mechanical exfoliation from bulk crystals. The fabricated four‐contact devices had linear current–voltage characteristics in the low‐bias regime |VSD| < 0.1 V. The current fluctuations had the noise spectral density SI ∼1/f for the frequency f < 10 kHz. The noise density SI followed the quadratic dependence on the drain–source current and changed from about ∼10−22 to 10−18 A2/Hz as the current increases from ∼10−7 to 10−5 A. The obtained data is important for planning transport experiments with topological insulators. We suggest that achieving the pure topological insulator phase with the current conduction through the ‘protected’ surface states can lead to noise reduction via suppression of certain scattering mechanisms. The latter has important implications for implementing the ultra‐low‐power and ultra‐low‐noise electronics.

Large thermoelectric figure of merit for three-dimensional topological Anderson insulators via line dislocation engineering

We study the thermoelectric properties of three-dimensional topological Anderson insulators with line dislocations. We show that at high densities of dislocations the thermoelectric figure of merit ZT can be dominated by one-dimensional topologically protected conducting states channeled through the lattice screw dislocations in the topological insulator materials with a nonzero time-reversal-invariant momentum such as Bi0.9Sb0.1. When the chemical potential does not exceed much the mobility edge the ZT at room temperatures can reach large values, much higher than unity for reasonable parameters, hence making this system a strong candidate for applications in heat management of nanodevices.

Half-Heusler ternary compounds as new multifunctional experimental platforms for topological quantum phenomena

Topological insulators (TI) realize a novel state of quantum matter that are distinguished by topological invariants of bulk band structure rather than spontaneously broken symmetries. A number of exotic quantum phenomena have been predicted to exist in multiply-connected geometries which require an enormous amount of materials flexibility. We have extended our previous search for TI materials from binary (Bi2X3 series) to the thermoelectric ternary compounds. We discover that the distorted LuPtSb is the first ternary compound harboring a 3D topological insulator state. We also show that the half-Heusler LuPtSb-type series is a natural platform that hosts a range of candidate compounds, alloys and artificial heterostructures (quantum-wells). We also discovered several different paradigms of trivial and non-trivial topological ordering in this class, including a metallic nontrivial topological state in YAuPb. Some of these materials are grown (results will be reported separately).

Topological Insulator Nanowires and Nanoribbons

Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi(2)Se(3) material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for dissipationless electronics and spintronics applications. Nanoscale topological insulator materials have a large surface-to-volume ratio that can manifest the conductive surface states and are promising candidates for devices. Here we report the synthesis and characterization of high quality single crystalline Bi(2)Se(3) nanomaterials with a variety of morphologies. The synthesis of Bi(2)Se(3) nanowires and nanoribbons employs Au-catalyzed vapor-liquid-solid (VLS) mechanism. Nanowires, which exhibit rough surfaces, are formed by stacking nanoplatelets along the axial direction of the wires. Nanoribbons are grown along [1120] direction with a rectangular cross-section and have diverse morphologies, including quasi-one-dimensional, sheetlike, zigzag and sawtooth shapes. Scanning tunneling microscopy (STM) studies on nanoribbons show atomically smooth surfaces with approximately 1 nm step edges, indicating single Se-Bi-Se-Bi-Se quintuple layers. STM measurements reveal a honeycomb atomic lattice, suggesting that the STM tip couples not only to the top Se atomic layer, but also to the Bi atomic layer underneath, which opens up the possibility to investigate the contribution of different atomic orbitals to the topological surface states. Transport measurements of a single nanoribbon device (four terminal resistance and Hall resistance) show great promise for nanoribbons as candidates to study topological surface states.

Topological surface states protected from backscattering by chiral spin texture

Topological insulators are a new class of insulators in which a bulk gap for electronic excitations is generated because of the strong spin-orbit coupling inherent to these systems. These materials are distinguished from ordinary insulators by the presence of gapless metallic surface states, resembling chiral edge modes in quantum Hall systems, but with unconventional spin textures. A key predicted feature of such spin-textured boundary states is their insensitivity to spin-independent scattering, which is thought to protect them from backscattering and localization. Recently, experimental and theoretical efforts have provided strong evidence for the existence of both two- and three-dimensional classes of such topological insulator materials in semiconductor quantum well structures and several bismuth-based compounds, but so far experiments have not probed the sensitivity of these chiral states to scattering. Here we use scanning tunnelling spectroscopy and angle-resolved photoemission spectroscopy to visualize the gapless surface states in the three-dimensional topological insulator Bi(1-x)Sb(x), and examine in detail the influence of scattering from disorder caused by random alloying in this compound. We show that, despite strong atomic scale disorder, backscattering between states of opposite momentum and opposite spin is absent. Our observations demonstrate that the chiral nature of these states protects the spin of the carriers. These chiral states are therefore potentially useful for spin-based electronics, in which long spin coherence is critical, and also for quantum computing applications, where topological protection can enable fault-tolerant information processing.