Topological Insulator Films Research Articles

Theory for linear and nonlinear planar Hall effect in topological insulator thin films

Recently, the linear and nonlinear planar Hall effect (PHE) on the topological insulators (TIs) surface has been extensively studied in experiments. To explain this phenomenon, various microscopic mechanisms are proposed theoretically, and one has to employ different mechanisms to separately understand the linear and nonlinear PHE even for the same system. Here, we study the planar magnetic resistance effect in TI thin film and find that a peculiar anisotropic scattering and a spin valve structure with respect to the PHE can be caused by the tilt and shift of Dirac cones, respectively, which are induced by the combination of spin-momentum locking of surface states and an in-plane magnetic field. The tilt and shift effects can act as the origin of both the linear and nonlinear PHE by distorting the spin texture of surface states or forming the spin polarization. These two mechanisms interplay and dominate, respectively, in strong coupling (thin TI) and decoupling (thick TI) between bottom and top surfaces. For thick TI film, we show that both the linear and nonlinear PHEs induced by the tilt effect can recover the results observed in recent experiments. Our theory provides a perspective to understand the origin of both linear and nonlinear PHE observed in recent experiments.

Disorder effects in topological insulator thin films

Thin films of topological insulators (TI) attract large attention because of expected topological effects from the inter-surface hybridization of Dirac points. However, these effects may be depleted by unexpectedly large energy smearing $\Gamma$ of surface Dirac points by the random potential of abundant Coulomb impurities. We show that in a typical TI film with large dielectric constant $\sim 50$ sandwiched between two low dielectric constant layers, the Rytova-Chaplik-Entin-Keldysh modification of the Coulomb potential of a charge impurity allows a larger number of the film impurities to contribute to $\Gamma$. As a result, $\Gamma$ is large and independent of the TI film thickness $d$ for $d > 5$ nm. In thinner films $\Gamma$ grows with decreasing $d$ due to reduction of screening by the hybridization gap. We study the surface conductivity away from the neutrality point and at the neutrality point. In the latter case, we find the maximum TI film thickness at which the hybridization gap is still able to make a TI film insulating and allow observation of the quantum spin Hall effect, $d_{\max} \sim 7$ nm.

Modification of the Hybridization Gap by Twisted Stacking of Quintuple Layers in a Three-Dimensional Topological Insulator Thin FilmSupported by the National Natural Science Foundation of China (Grant Nos. 61804056 and 92065102).

Twisting the stacking of layered materials leads to rich new physics. A three-dimensional topological insulator film hosts two-dimensional gapless Dirac electrons on top and bottom surfaces, which, when the film is below some critical thickness, will hybridize and open a gap in the surface state structure. The hybridization gap can be tuned by various parameters such as film thickness and inversion symmetry, according to the literature. The three-dimensional strong topological insulator Bi(Sb)Se(Te) family has layered structures composed of quintuple layers (QLs) stacked together by van der Waals interaction. Here we successfully grow twistedly stacked Sb2Te3 QLs and investigate the effect of twist angels on the hybridization gaps below the thickness limit. It is found that the hybridization gap can be tuned for films of three QLs, which may lead to quantum spin Hall states. Signatures of gap-closing are found in 3-QL films. The successful in situ application of this approach opens a new route to search for exotic physics in topological insulators.

Gate Tunable Supercurrent in Josephson Junctions Based on Bi2Te3 Topological Insulator Thin FilmsSupported by the Basic Science Center Project of the National Natural Science Foundation of China (Grant No. 51788104), and the National Key R&D Program of China (Grant No. 2017YFA0302900).

We report transport measurements on Josephson junctions consisting of Bi2Te3 topological insulator (TI) thin films contacted by superconducting Nb electrodes. For a device with junction length L = 134 nm, the critical supercurrent I c can be modulated by an electrical gate which tunes the carrier type and density of the TI film. I c can reach a minimum when the TI is near the charge neutrality regime with the Fermi energy lying close to the Dirac point of the surface state. In the p-type regime the Josephson current can be well described by a short ballistic junction model. In the n-type regime the junction is ballistic at 0.7 K < T < 3.8 K while for T < 0.7 K the diffusive bulk modes emerge and contribute a larger I c than the ballistic model. We attribute the lack of diffusive bulk modes in the p-type regime to the formation of p–n junctions. Our work provides new clues for search of Majorana zero mode in TI-based superconducting devices.

Electrical properties of a metal-germanium-topological insulator (metal/n-Ge/p-Bi2Te3) heterostructure devices

This work presents topological insulator (TI) heterojunction Metal/ $$n$$ -Ge/Bi2Te3, by growing a thin TI film of Bi2Te3 on an $$n$$ -type Germanium (Ge) substrate. The microstructure and morphology of the developed Bi2Te3 film are analyzed. The electrical behavior of the Metal/ $$n$$ -Ge/Bi2Te3 heterojunction is examined by current–voltage (I–V) and capacitance–voltage (C–V) measurements. The performance of the heterostructure was examined by depositing different metallic contacts. Metal contacts of aluminum (Al), silver (Ag), and platinum (Pt) were used, and they formed Schottky contact with Ge and an ohmic contact with Bi2Te3. Pt/ $$n$$ -Ge/Bi2Te3 heterostructure was found best in terms of rectification ratio $$(RR)$$ = 122.7, the figure of merit ( $$FOM)$$ = 49.5, and ideality factor $$(n)$$ = 7.33 with small series resistance ( $${R}_{s})$$ . The space-charge limited current (SLSC) and ohmic conduction are the transport mechanisms that govern these heterojunctions at a different voltage, affecting its performance. The influence of $$n$$ -Ge/ $$p$$ -Bi2Te3 junction on the performance of Metal/ $$n$$ -Ge/Bi2Te3 is analyzed. The experimental results are fitted by two-diode simulation and current density–voltage (J–V) and local ideality factor—voltage n–V plots of these heterojunctions are studied for the recombination current ( $${J}_{02})$$ . This study is significant in terms of the electrical performance of the Ge-TI-based, heterojunction devices.

Large-proximity-induced anomalous Hall effect in Bi2−xSbxTe3−ySey/Cr2Ge2Te6 heterostructure prepared by film transfer method

The magnetic proximity effect is one of the powerful approaches to realize quantum anomalous Hall effect in topological insulators (TIs) targeting at high temperatures. Various TI/ferromagnetic-insulator (FMI) heterostructures have extensively been investigated by using a van der Waals epitaxial growth technique of TI films grown on FMI substrates. However, FMI materials which can be used as a substrate are strictly limited due to the lattice mismatching between TI and FMI, not succeeding to boost the quantization temperature to be higher. Here, we show that a large anomalous Hall effect, comparable to the best value so far reported for the heterostructure interfaces fabricated by epitaxial growth techniques, is realized for ${\mathrm{Bi}}_{1.5}{\mathrm{Sb}}_{0.5}{\mathrm{Te}}_{1.7}{\mathrm{Se}}_{1.3}$ (BSTS)/${\mathrm{Cr}}_{2}{\mathrm{Ge}}_{2}{\mathrm{Te}}_{6}$ (CGT) heterostructure by transferring an epitaxially grown BSTS thin film floating on a ultrapure water directly on a CGT substrate (wet transfer method). The fundamental discussions about the nature of magnetic proximity effect were given in the aspect of the quality of the CGT substrate and the atomic orientation of the TI/CGT interface. The large magnetic proximity effect shown in our present studies can be applicable for a variety of FMI substrates and therefore can pave a route for promoting magnetic TIs both in basic science and applications.

Faraday Rotation Due to Quantum Anomalous Hall Effect in Cr-Doped (Bi,Sb)2Te3

Quantum anomalous Hall effect (QAHE) represents a quantized version of the classical anomalous Hall effect. In the latter case the magnetization takes over the role of magnetic field and induces nonzero off-diagonal elements in the conductivity matrix. In magnetic topological insulators with the band inversion the QAHE can be reached due to quantized conduction channel at the sample edge if the Fermi energy is tuned into the surface magnetic gap. In the static regime the QAHE is seen as a zero-field step in the Hall resistivity. At optical frequencies this step is transformed into a quantized value of the polarization rotation approaching the fine structure constant α=e2/2ε0hc≈1/137. However, due to material issues the steps reach the predicted values at millikelvin temperatures only. In this work we investigate the Faraday polarization rotation in thin films of Cr-doped topological insulator and in the sub-terahertz frequency range. Well defined polarization rotation steps can be observed in transmittance in Faraday geometry. At temperatures down to T=1.85 K the value of the rotation reached about 20% of the fine structure constant and disappeared completely for T&gt;20 K.

Transitional Faraday and Kerr effect in hybridized topological insulator thin films

We theoretically investigate quantum phase transitions from topologically non-trivial to trivial states in three-dimensional hybridized topological insulator (TI) ultra-thin films. The interplay between the hybridization of the top and bottom surface states (SSs) and Zeeman energy gives rise to topological and normal insulating phases. By tuning the Zeeman energy, we can drive phase transition between these two phases by closing and reopening the band gap. Furthermore, we impinge a Gaussian beam on the surface of the 3D TI to study the Faraday rotation (FR) and magneto-optical Kerr effect (MOKE) in the presence of an external magnetic field, while explicitly taking into account the hybridization between the top and bottom Dirac SSs of the TI film. The FR and MOKE change sign when the polarization is changed from s to p. We demonstrate that giant FR and MOKE can be achieved by tuning the external magnetic field. Furthermore, the MOKE signal takes a sharp anti-phase peak at the charge neutrality point as the system goes from the quantum spin Hall insulator (QSHI) to the semimetallic state. Lastly, the MOKE and FR in the bottom and top SSs can be independently tuned for intra-band and inter-band transitions via n-type and p-type doping respectively.

Topological Hall effect in magnetic topological insulator films

Geometric Berry phase can be induced either by spin–orbit coupling, giving rise to the anomalous Hall effect in ferromagnetic materials, or by chiral spin texture, such as skyrmions, leading to the topological Hall effect. Recent experiments have revealed that both phenomena can occur in topological insulator films with magnetic doping, thus providing us with an intriguing platform to study the interplay between these two phenomena. In this work, we report on a numerical simulation of the anomalous Hall and topological Hall effects in a four-band model that can properly describe the quantum well states in the magnetic topological insulator films by combining Landauer–Büttiker formula and the iterative Green’s function method. Our numerical results suggest that spin–orbit coupling in this model plays a different role in the quantum transport in the clean and disordered limits. In the clean limit, spin–orbit coupling mainly influences the longitudinal transport but does not have much effect on topological Hall conductance. In the disordered limit, the longitudinal transport is determined by disorder scattering and spin–orbit coupling is found to affect strongly the topological Hall conductance. This sharp contrast unveils a dramatic interplay between spin–orbit coupling and disorder effect in topological Hall effect in magnetic topological insulator systems.

High performing flexible optoelectronic devices using thin films of topological insulator

Topological insulators (TIs) possess exciting nonlinear optical properties due to presence of metallic surface states with the Dirac fermions and are predicted as a promising material for broadspectral phodotection ranging from UV (ultraviolet) to deep IR (infrared) or terahertz range. The recent experimental reports demonstrating nonlinear optical properties are mostly carried out on non-flexible substrates and there is a huge demand for the fabrication of high performing flexible optoelectronic devices using new exotic materials due to their potential applications in wearable devices, communications, sensors, imaging etc. Here first time we integrate the thin films of TIs (Bi2Te3) with the flexible PET (polyethylene terephthalate) substrate and report the strong light absorption properties in these devices. Owing to small band gap material, evolving bulk and gapless surface state conduction, we observe high responsivity and detectivity at NIR (near infrared) wavelengths (39 A/W, 6.1 × 108 Jones for 1064 nm and 58 A/W, 6.1 × 108 Jones for 1550 nm). TIs based flexible devices show that photocurrent is linearly dependent on the incident laser power and applied bias voltage. Devices also show very fast response and decay times. Thus we believe that the superior optoelectronic properties reported here pave the way for making TIs based flexible optoelectronic devices.

Study of magnetic and transport properties of Bi2Se3/FeSe2 bilayer thin films

Thin films of topological insulator (TI) Bi2Se3 were grown onto the surfaces of FeSe2 layers of different thicknesses on Si (100) substrates by magnetron sputtering, forming bilayer films with smooth surface. Magnetic and transport measurements indicate ferromagnetism in these bilayer samples. Large coercive fields at low-temperatures and a room-temperature magnetic order were observed. Moreover, nonsaturated high-filed linear magnetoresistance (MR) and weak anti-localization effect were found in these bilayer thin films. These results indicate that the bilayer samples could have both strong spin–orbit coupling and ferromagnetic proximity effect, which are the desired features.

Optical properties of atomically thin films of the topological insulator Bi2Se3

Problem formulating. To study the transport properties of atomically thin films of topological insulators, it is very important to determine their thickness as accurately as possible, as well as the state of the surface. Goal. To obtain atomically thin films of the topological insulator Bi2Se3 and to determine their thickness and the degree of surface degradation via their optical properties. Result. A technique that allows one to obtain single-crystal films of large area and various thicknesses on optically transparent substrates has been developed. The dependence of the transparency depending on the number of atomic layers (Bi2Se3 quintiples) in the film is determined. The obtained exact dependence of transparency on the number of layers is in good agreement with theory. It was also possible to observe how the transparency of the films changes over time, which is associated with the degradation of its surface layers. Practical meaning.The results obtained can be used for optical quality control of atomically thin films of quasi-twodimensional compounds, as well as for the manufacture of various micro- and nanostructures based on them, which can bring closer to the creation of a new element base for electronic devices.

Size effect in the kinetic properties in “sized” films of Bi2Se3 topological insulator

The Hall resistivity and magnetoresistivity of topological insulator Bi2Se3 thin films with a thickness from 30 nm to 75 nm in the temperature range from 4.2 to 80 K and magnetic fields of up to 10 T were measured. A size effect in the kinetic properties of bismuth selenide films was studied, i.e. a dependence of the Hall coefficient and magnetoconductivity of film dimensions. It was suggested that a similar size effect should be observed in other kinetic electronic properties, both of topological insulators and topological semimetals.

Highly tunable magnetic coupling in ultrathin topological insulator films due to impurity resonances

We theoretically investigate the exchange interaction between magnetic impurities in ultrathin Bi$_2$Se$_3$ topological insulator films by taking into account the low-energy states produced by the impurities. We find that the locally induced impurity resonances strongly influence the exchange interaction between magnetic moments. In particular, we find a non-collinear alignment being more favorable than the collinear ferromagnetic alignment preferred when impurity states are ignored and only the pristine topological insulator band structure is considered. Moreover, we show that by applying of an electric field perpendicular to the ultrathin film, the exchange interaction can be drastically enhanced. This opens for the possibility of highly tunable magnetism by electric field.

Propagating Dirac plasmon polaritons in topological insulators

We investigate the excitation of propagating Dirac plasmon polaritons (DPPs) in topological insulator (TI) thin films. A series of TI thin films were grown by molecular beam epitaxy. Periodic gold grating couplers with different periodicity were fabricated on the TI films to excite the propagating DPPs. A series of absorption peaks that shift with the grating periodicity were observed in Fourier transform infrared spectroscopy transmission scans. We have ruled out any source other than the excitation of propagating DPPs that could have caused the peaks to appear. The peak dispersion is consistent with theoretical predictions for coupled DPPs in TI thin films.

A topological Josephson junction platform for creating, manipulating, and braiding Majorana bound states

As part of the intense effort toward identifying platforms in which Majorana bound states can be realized and manipulated to perform qubit operations, we propose a topological Josephson junction architecture that achieves these capabilities and which can be experimentally implemented. The platform uses conventional superconducting electrodes deposited on a topological insulator film to form networks of proximity-coupled lateral Josephson junctions. Magnetic fields threading the network of junction barriers create Josephson vortices that host Majorana bound states localized in the junction where the local phase difference is an odd multiple of π, i.e. attached to the cores of the Josephson vortices. This enables us to manipulate the Majorana states by moving the Josephson vortices, achieving functionality exclusive to these systems in contrast to others, such as those composed of topological superconductor nanowires. We describe protocols for: (1) braiding localized Majorana states by exchange, (2) controlling the separation and hence the coupling of adjacent localized Majorana states to effect non-Abelian rotations via hybridization of the Majorana modes, and (3) reading out changes in the non-local parity correlations induced by such operations. These schemes utilize current pulses and local magnetic field pulses to control the location of vortices, and measurements of the Josephson current–phase relation to reveal the presence of the Majorana bound states. Finally, we present brief discussions of readout schemes and viable experimental settings for realizing the platform.

Demonstration of Dissipative Quasihelical Edge Transport in Quantum Anomalous Hall Insulators.

Doping a topological insulator (TI) film with transition metal ions can break its time-reversal symmetry and lead to the realization of the quantum anomalous Hall (QAH) effect. Prior studies have shown that the longitudinal resistance of the QAH samples usually does not vanish when the Hall resistance shows a good quantization. This has been interpreted as a result of the presence of possible dissipative conducting channels in magnetic TI samples. By studying the temperature- and magnetic-field-dependence of the magnetoresistance of a magnetic TI sandwich heterostructure device, we demonstrate that the predominant dissipation mechanism in thick QAH insulators can switch between nonchiral edge states and residual bulk states in different magnetic-field regimes. The interactions between bulk states, chiral edge states, and nonchiral edge states are also investigated. Our Letter provides a way to distinguish between the dissipation arising from the residual bulk states and nonchiral edge states, which is crucial for achieving true dissipationless transport in QAH insulators and for providing deeper insights into QAH-related phenomena.

Signature of gate-controlled magnetism and localization effects at Bi2Se3/EuS interface

Proximity of a topological insulator (TI) surface with a magnetic insulator (MI) can open an exchange gap at the Dirac point leading to exploration of surface quantum anomalous Hall effect. An important requirement to observe the above effect is to prevent the topological breakdown of the surface states (SSs) due to various interface coupling effects and to tune the Fermi level at the interface near the Dirac point. In this work, we demonstrate the growth of high-quality c-axis oriented strain-free layered films of TI, Bi2Se3, on amorphous SiO2 substrate in proximity to an MI, europium sulfide (EuS), that show stronger weak anti-localization response from the surface than previous studies with epitaxially interfaced heterostructures. Importantly, we find gate and magnetic field cooling modulated localization effects in the SSs, attributed to the position of interface Fermi level within the band gap that is also corroborated from our positron annihilation spectroscopy measurements. Furthermore, our experiments provide a direct evidence of gate-controlled enhanced interface magnetism in EuS arising from the carrier mediated Ruderman–Kittel–Kasuya–Yosida interactions across the Bi2Se3/EuS interface. These findings demonstrate the existence of complex interfacial phenomena affecting the localization response of the SSs that might be important in proximity engineering of the TI surface to observe surface quantum Hall effects.

Quantum Hall effect in wedge-shaped samples

The quantum Hall effect (QHE) is broadly studied in the films of semiconductors, conductors, topological insulators, and topological semimetals. Wedge-shaped samples, guaranteeing the uniform properties of materials, bring obscure characteristics connected to the sample geometry. Here we study the QHE in wedge-shaped samples by using a simple electron gas model. We find that the Hall resistance shows anomalous behaviors: the Hall plateau value shifts when measuring from different lateral terminals, the Hall resistances in positive and negative magnetic fields are not equal, and the Hall resistance depends on the direction of the tilted magnetic field. In addition, the longitudinal resistance also has anomalous characteristics in wedge-shaped samples. These results are very similar to the QHE based on the Weyl orbits observed in a recent experiment, although they are different in origin. These anomalous behaviors in the trivial wedge-shaped sample originate from the spatial redistribution of Landau levels; that is, the edge state can follow an equal-thickness path in the bulk.

Observation of Quantum Anomalous Hall Effect and Exchange Interaction in Topological Insulator/Antiferromagnet Heterostructure.

Integration of a quantum anomalous Hall insulator with a magnetically ordered material provides an additional degree of freedom through which the resulting exotic quantum states can be controlled. Here, an experimental observation is reported of the quantum anomalous Hall effect in a magnetically-doped topological insulator grown on the antiferromagnetic insulator Cr2 O3 . The exchange coupling between the two materials is investigated using field-cooling-dependent magnetometry and polarized neutron reflectometry. Both techniques reveal strong interfacial interaction between the antiferromagnetic order of the Cr2 O3 and the magnetic topological insulator, manifested as an exchange bias when the sample is field-cooled under an out-of-plane magnetic field, and an exchange spring-like magnetic depth profile when the system is magnetized within the film plane. These results identify antiferromagnetic insulators as suitable candidates for the manipulation of magnetic and topological order in topological insulator films.