International Journal of Computational Engineering ScienceVol. 04, No. 03, pp. 711-714 (2003) Poster PapersNo AccessEVALUATION OF RESONATING CHANNEL TRANSISTOR IN SOI WAFERS. MYLLYMAKI, E. RISTOLAINEN, P. HEINO, A. LEHTO, and K. VARJONENS. MYLLYMAKITampere University Technology, Finland Search for more papers by this author , E. RISTOLAINENTampere University Technology, Finland Search for more papers by this author , P. HEINOTampere University Technology, Finland Search for more papers by this author , A. LEHTOTampere University Technology, Finland Search for more papers by this author , and K. VARJONENTampere University Technology, Finland Search for more papers by this author https://doi.org/10.1142/S1465876303002118Cited by:0 PreviousNext AboutSectionsPDF/EPUB ToolsAdd to favoritesDownload CitationsTrack CitationsRecommend to Library ShareShare onFacebookTwitterLinked InRedditEmail AbstractA new type of oscillating transistor structure has been developed in thin film SOI applications.The oscillator's mechanical resonator has circular shape and vertical vibration. By using conventional SOI chips with other electronics it possible to add this resonator in same structure without complex process steps. The oscillating transistor can be used primarily in low frequencies (MHz). The component has one electrostatically driven electrode and two electrodes for drain and source parts. By using this component, the transistor can be driven electrostatically. It can have higher voltage current aplification -ratio than conventional transistor because of mechanic impact. For filter solutions coupling rods are not needed. The structure have been measured Q-value of 700 at 3,3MHz in normal room conditionsKeywords:SOItransistorresonatoroscillatorMEMS References C. T.-C. Nguyen, Transceiver Front-End Architectures Using Vibrating Micromechanical Signal Precessors, Dig. of Papers, Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Sept. 12-14 (2001) 23-32 . Google Scholar S. Yoel, F. Ayazi, The HARPSS process for fabrication of nano-precision silicon electromechanical resonators, 1st IEEE Conference on Nanotechnology, December (2001) 489-494 . Google Scholar H.C. Nathanson, et al., The Resonant Gate Transistor, IEEE Trans. Electron Devices, March, vol. 14, no. 3 (1967) 117-133 . Google Scholar FiguresReferencesRelatedDetails Recommended Vol. 04, No. 03 Metrics History KeywordsSOItransistorresonatoroscillatorMEMSPDF download