Top Silver Research Articles

Volatile and Nonvolatile Resistive Switching Coexistence in Conductive Point Hexagonal Boron Nitride Monolayer.

Recently, we demonstrated the nonvolatile resistive switching effects of metal-insulator-metal (MIM) atomristor structures based on two-dimensional (2D) monolayers. However, there are many remaining combinations between 2D monolayers and metal electrodes; hence, there is a need to further explore 2D resistance switching devices from material selections to future perspectives. This study investigated the volatile and nonvolatile switching coexistence of monolayer hexagonal boron nitride (h-BN) atomristors using top and bottom silver (Ag) metal electrodes. Utilizing an h-BN monolayer and Ag electrodes, we found that the transition between volatile and nonvolatile switching is attributed to the thickness/stiffness of chain-like conductive bridges between h-BN and Ag surfaces based on the current compliance and atomristor area. Computations indicate a "weak" bridge is responsible for volatile switching, while a "strong" bridge is formed for nonvolatile switching. The current compliance determines the number of Ag atoms that undergo dissociation at the electrode, while the atomristor area determines the degree of electric field localization that forms more stable conductive bridges. The findings of this study suggest that the h-BN atomristor using Ag electrodes shows promise as a potential solution to integrate both volatile neurons and nonvolatile synapses in a single neuromorphic crossbar array structure through electrical and dimensional designs.

Fully printed memristors made with MoS2 and graphene water-based inks.

2-Dimensional materials (2DMs) offer an attractive solution for the realization of high density and reliable memristors, compatible with printed and flexible electronics. In this work we fabricate a fully inkjet printed MoS2-based resistive switching memory, where graphene is used as top electrode and silver is used as bottom electrode. Memristic effects are observed only after annealing of each printed component. The printed memory on silicon shows low SET/RESET voltage, short switching times (less than 0.1 s) and resistance switching ratios of 103-105, comparable or superior to the performance obtained in devices with both printed silver electrodes on rigid substrates. The same device on Kapton shows resistance switching ratios of 102-103 and remains stable at least up to 2% of strain. The memristor resistance switching is attributed to the formation of Ag conductive filaments, which can be suppressed by integrating graphene grown by chemical vapour deposition (CVD) onto the silver electrode. Temperature-dependent electrical measurements starting from 200 K show that memristic behavior appears at a temperature of ∼300 K, confirming that an energy threshold is needed to form the conductive filament. This work shows that inkjet printing is a very powerful technique for the fabrication of 2DMs-based resistive switches onto rigid and flexible substrates.

Ligand-controlled exposure of active sites on the Pd1Ag14 nanocluster surface to boost electrocatalytic CO2 reduction.

Advancing catalyst design requires meticulous control of nanocatalyst selectivity at the atomic level. Here, we synthesized two Pd1Ag14 nanoclusters: Pd1Ag14(PPh3)8(SPh(CF3)2)6 and Pd1Ag14(P(Ph-p-OMe)3)7(SPh)6, each with well-defined structures. Notably, in Pd1Ag14(P(Ph-p-OMe)3)7(SPh)6, the detachment of a phosphine ligand from the top silver atom facilitates the exposure of singular active sites. This exposure significantly enhances its selectivity for the electrocatalytic reduction of CO2 to CO, achieving a Faraday efficiency of 83.3% at -1.3 V, markedly surpassing the 28.1% performance at -1.2 V of Pd1Ag14(PPh3)8(SPh(CF3)2)6. This work underscores the impact of atomic-level structural manipulation on enhancing nanocatalyst performance.

TOP ELECTRODE INVESTIGATION OF OPV MODULES BASED ON P3HT:PC[60]BM FABRICATED VIA ROLL-TO-ROLL PROCESS

Solar photovoltaic (PV) cells allow the direct conversion of sunlight into electricity without CO2 emission. Finding a way to cheaply utilize the vast amount of solar energy is one of the biggest challenges for this technology. The organic photovoltaic cells (OPV) are based on solution-processed photoactive polymers and can be fabricated via roll-to-roll (R2R) processes, which allow high production throughput with low costs. CSEM Brasil is building the foundations of future high-tech industries in Brazil and one of our key technology development areas is OPV modules production using R2R coating. In this work, polymer solar cells based on P3HT: PC[60]BM were prepared by R2R coating (electron transport, active and hole transport layers – ETL, AL and HTL) and by screen printing (top silver electrode). In order to save material and give more transparency of the OPV module were compared and evaluated the performance of two different suppliers of Ag paste (A and B) in three different top contact configurations, solid, grid and honeycomb. Additionally, were compared two different screen suppliers (I and II) for screen printing process and the Ag paste drying time studied. The comparisons were made with modules with an active area of 21.6 cm2 (6 stripes serially connected). Photovoltaic performance was evaluated in terms of Ag paste and screens suppliers, Ag pattern and drying time. Finally, modules were encapsulated in a R2R laminator using a flexible barrier film and evaluated in terms of lifetime.

Probing the stability of perovskite solar cell under working condition through an ultra-thin silver electrode: Beyond the halide ion diffusion and metal diffusion

Perovskite solar cells (PSCs) with an excellent optoelectronic performance have intrigued mushrooming research interests, and the undesirable intrinsic stability of halide perovskite materials still remains a severe constraint for their practical application. Fortunately, the ambiguous and complicated incentives for the degradation process of PSCs under working condition can be directly reflected on the corrosion of silver electrode by halogens. Here, a new perspective for evaluating the long-term stability of PSCs is presented by the time-dependent transverse resistance of the ultrathin silver electrode under different working conditions. Being anode or cathode, the stability of ultra-thin silver layer has been systematically investigated through adjusting the external operating conditions of devices, i.e. light illumination and bias voltage. Experimental results indicate that the gradual resistance increases of silver film can be attributed to the oxidation of I− existing on the top surface of perovskite layer by non-equilibrium holes generated from light illumination or electrical injection for producing corrosive I2 gas, which will diffuse through the carrier transporting layer and attack the thin silver layer. The interaction probability of I− and non-equilibrium holes at the interface plays a critical role on the generation of I2 gas and resistance variation of the top thin silver electrode. The stability study of electrode indicator will shed light on the ambiguous degradation mechanisms of PSC under working condition, paving a path for conquering the fatal problems of the practical application.

An Alcohol‐Soluble N‐Annulated Perylene Diimide Cathode Interlayer for Air‐Processed, Slot‐Die Coated Organic Photovoltaic Devices and Large‐Area Modules

Cathode interlayers (CILs) in organic photovoltaics (OPVs) are actively being researched as they are critical for device stability and performance. Herein, N‐annulated perylene diimide with a 2‐ethyl‐hexyl side chain (PDIN‐EH) is demonstrated, which is facile to synthesize as compared with conventional CILs such as PFN‐Br, exhibits solubility, and subsequent processability from ethanol. The PDIN‐EH is evaluated as a CIL in an air‐processed, slot‐die coated OPV consisting of PEDOT:PSS as the hole transport layer, PM6:Y6C12 as the bulk heterojunction, and top silver cathode electrode. All the organic layers are slot‐die coated from green solvents and devices achieve a power convention efficiency of more than 12%, a result that is among the best reported under ambient conditions for printed OPVs. Microscopy images reveal that the PDIN‐EH affords smooth film formation when slot‐die coated on top of PM6:Y6C12 bulk heterojunction for an improved contact with the Ag electrode. Furthermore, the fabrication of large‐area OPV modules on glass and flexible (polyethylene terephthalate) substrates is successfully demonstrated, with five cells connected in series achieving efficiency over 7% and open‐circuit voltage over 3.5 V. Herein, useful guidelines for achieving fully printed organic electronic devices from green solvents at a potential industrial scale are provided.

Geological and Mining Constraints on Historical Mine Production: The Case of Early Medieval Lead-Silver Mining at Melle, France

Early Medieval silver production for the Melle Pb-Ag deposit in western France has been estimated up to 15 tonnes per year over hundreds of years (Téreygeol, 2013) which would place it amongst the top silver mines of all times prior to the New World discoveries. However, this deposit has geological and mining characteristics economically unsuitable for substantial production, because it is thin, sub-horizontal and comprised of discontinuous pods. Furthermore, it is a Mississippi Valley type (MVT) base metal deposit, which are typically not major silver producers. There is no geological evidence for primary or secondary enrichment to generate silver-rich ore. Inaddition, the fact that Melle remained unmined in all later historical periods is enigmatic compared to the almost ubiquitous reworking of significant ore deposits elsewhere.In this paper, I discuss the geological characteristics, mining parameters, documented historical mining rates and workforce considerations, all of which can be used to constrain production estimates for Melle. The largest uncertainty for production estimates is the workforce size, which reflects scarce information about Carolingian Melle and its surroundings. A model employing realistic mining parameters and a workforce appropriate for a small mining village (100 miners/fire-setters, within a workforce of 250-300, from a settlement of at least 400-500) yields 52 tonnes of lead metal and 150 kg of silver per year. Doubling the workforce would double this estimate. Conversely, it could be half or less if mining was a seasonal activity between agricultural priorities such as harvesting and seeding.The previously claimed production rates require improbable mining assumptions together with at least 500 dedicated full-time miners and a population in the thousands. Furthermore, it would yield per capita silver productivity more than four times higher than in well-documented Early Modern operations that were leading silver deposits of their time. This seems unlikely. However, even at the much lower production levels, favoured here, Melle still might have been a major factor in the Carolingian economy, with its lead production perhaps as important as its silver.

Fully printed organic solar modules with bottom and top silver nanowire electrodes

AbstractOne of the advantages of organic photovoltaics (OPV) over other contemporary technologies is its relative ease of processing. There are, however, very few works that have realized fully printed devices, including the bottom electrode, let alone with a scalable process in a reasonable device size (>1 cm2). In this work, design steps and optimization processes towards fully printed OPV modules with scalable processes are demonstrated for the first time. An overview on issues related to upscaling with printed electrodes is first provided. The various issues are then addressed by a rational design process supported by measurements and calculations. Finally, a set of fully printed OPV modules are fabricated using these optimized parameters that have over 3.5‐cm2 active area with 5% efficiency. For the first time, this work has also demonstrated the process compatibility of fully printed device structures with non‐fullerene acceptor systems, which enables more design opportunities for the current generation of high‐performance OPV materials.

Investigation on asymmetric resistive switching (RS) characteristics in p-NiO/n-ZnO heterojunctions

In this research, we report asymmetric resistive switching (RS) characteristics using p-NiO and n-ZnO heterojunctions. A cost-effective spray pyrolysis technique is adopted for the deposition of n-ZnO and p-NiO layers. The structural analysis of ZnO and NiO layers confirms the hexagonal wurtzite and cubic structure, respectively. The morphological analysis of the p-NiO/n-ZnO heterojunction confirms the presence of a multilayered structure. The heterojunction was stacked between top silver (Ag) and bottom indium doped tin oxide (ITO) electrodes, and the RS characteristics were investigated. The RS device exhibits asymmetric current-voltage (I-V) characteristics with an ON/OFF ratio calculated as 2.7 and stable endurance characteristics of 50 cycles. It was analyzed that the formation and rupture of conductive filaments through intrinsic defects modulated by the p-NiO and n-ZnO layers contribute to the observed asymmetric resistive switching (RS) behavior in the fabricated p-NiO/n-ZnO heterojunction.

Optoelectronic analysis of spectrally selective nanophotonic metafilm cell for thermophotovoltaic energy conversion

This work theoretically studies a spectrally selective nanophotonic cell based on an asymmetric Fabry-Perot resonance cavity structure with sub-100-nm GaSb layer for improving the thermophotovoltaic (TPV) energy conversion performance. The simulated spectral property of the ultrathin metafilm cell structure exhibits a high absorption peak above the bandgap due to the interference effect with electromagnetic field enhanced inside the GaSb layer between top and bottom silver electrodes, while the sub-bandgap absorption is as low as a few percent because of high reflectivity of the metal. An absorption enhancement nearly 20 times at particular frequency above bandgap is achieved within the sub-100-nm GaSb layer with the nanophotonic cell structure compared to the free-standing one. Besides, a thin layer of MoOx is incorporated into the metafilm cell structure as a hole transport layer to consider the charge collection in practice. With rigorous optoelectronic analysis by considering both radiative and nonradiative recombinations (Shockley-Read-Hall and Auger), the nanophotonic cell is predicted to achieve a TPV efficiency of 22.8% and output power of 0.62 W/cm2 with a black emitter at 1500 K due to spectrally enhanced in-band absorption and low sub-bandgap absorption. With an ideal selective emitter the efficiency can be further improved to 28% by eliminating sub-bandgap photons. While selective emitters still endure the challenges in perfect spectral emittance and high-temperature stability in practice, the proposed wavelength-selective nanophotonic metafilm cell could be a viable route to achieve high-efficiency and low-cost TPV energy conversion.

Sulfonate-Conjugated Polyelectrolytes as Anode Interfacial Layers in Inverted Organic Solar Cells.

Conjugated polymers with ionic pendant groups (CPEs) are receiving increasing attention as solution-processed interfacial materials for organic solar cells (OSCs). Various anionic CPEs have been successfully used, on top of ITO (Indium Tin Oxide) electrodes, as solution-processed anode interlayers (AILs) for conventional devices with direct geometry. However, the development of CPE AILs for OSC devices with inverted geometry is an important topic that still needs to be addressed. Here, we have designed three anionic CPEs bearing alkyl-potassium-sulfonate side chains. Their functional behavior as anode interlayers has been investigated in P3HT:PC61BM (poly(3-hexylthiophene): [6,6]-phenyl C61 butyric acid methyl ester) devices with an inverted geometry, using a hole collecting silver electrode evaporated on top. Our results reveal that to obtain effective anode modification, the CPEs’ conjugated backbone has to be tailored to grant self-doping and to have a good energy-level match with the photoactive layer. Furthermore, the sulfonate moieties not only ensure the solubility in polar orthogonal solvents, induce self-doping via a right choice of the conjugated backbone, but also play a role in the gaining of hole selectivity of the top silver electrode.

Circular dichroism of spatially complementary chiral nanostructures

Circular dichroism (CD) is widely used in biology, medicine, and physics. Three-dimensional (3D) chiral structures have been extensively studied because of their ability to produce significant CD effects. Previously reported 3D chiral structures are limited due to the complexity of fabrication processes and CD mechanisms. Here, spatially complementary chiral nanostructure (SCCN) arrays, which comprise bottom silver films with zigzag-shaped nanoslit and top complementary silver zigzag-shaped nanowires, are theoretically and experimentally shown to provide the CD effect. SCCN arrays are prepared experimentally by combining electron beam lithography (EBL) with normal electron beam deposition (NEBD) method and by utilizing EBL and NEBD only once. Numerical results demonstrate that localized surface plasmon excited on top complementary silver zigzag-shaped nanowires and surface plasmon polariton excited on bottom silver films with zigzag-shaped nanoslit result in the CD effect of SCCN arrays. In addition, the CD effect can be tuned by changing the width of the top complementary silver zigzag-shaped nanowires. Such type of chiral nanostructures has easy tunability, simple fabrication, and a better understanding of chiral optical response, which provides a new design for spatially chiral optoelectronic devices.

Realizing the Multiband Absorption in the Visible Region via the Collaboration of Fabry–Pérot, Propagating Surface Plasmons, and Void Plasmons Resonance Effects

Herein, a novel method is proposed to achieve multiband absorption in the visible region. Different from the conventional metal–insulator–metal (MIM) based multiband absorbers which absorb normally incident plane waves at different frequencies based on the impedance matching effect, the multiband absorption proposed here is achieved through the coupling effects of Fabry–Pérot (FP), propagating surface plasmons (PSPs), and void plasmons (VPs) resonance. A clear physical image is unveiled by means of numerical simulations through the geometric parameters corresponding to various resonance modes. The absorption features can be easily controlled by tuning the period of square lattice, porosity of unit cell in the top silver layer, and the film thickness of the middle layer. The presented study on the physical mechanism of the multiband absorption is believed to be beneficial for designing new‐generation absorbers for suitable novel applications.

Crack-Tolerant Metal Composites as Photovoltaic Gridlines

Multiwalled carbon nanotubes are used to electromechanically reinforce metal gridlines and busbars on commercial triple-junction solar cells. For the reinforcement, we create a layer-by-layer microstructure which consists of electroplated silver, spray-coated carbon nanotubes, and another layer of electroplated silver. The top silver layer is intercalated through the network of carbon nanotubes, connecting with the bottom silver layer. This metal matrix composite integration leads to beginning-of-life cell performance identical to the control cells with conventional metallization. Fill factor and efficiency remain the same. When the cells are intentionally cracked, the composite-reinforced cells maintain superior performance compared with the control cells. The key difference is that short-circuit current density of composite-reinforced cells remains essentially unaffected, whereas a reduction >50% is observed for the control cells. The metal matrix composites show strong potential to improve the reliability and service time of space photovoltaics against stress-induced fractures.

Memristive Behavior in Core-Shell Nanowire Networks for Neuromorphic Architectures

Continuous enhancement of performance and processing powers of computing devices will soon reach a technological and physical limit and to overcome this, systems emulating the human brain are being developed. Presently, mathematical models known as artificial neural networks (ANNs) are designed to simulate the computational abilities of the brain. Due to large simulation times, the current digital ANNs cannot be efficiently scaled. By contrast, analog (as opposed to digital) neuromorphic devices with dedicated and adaptable synapses are expected to rival the scale and efficiency of the brain. Memristors are two-terminal electrical component where the resistance is a function of the amount and direction of current and therefore they can uniquely emulate biological synapse behavior. Here, we discuss memristive behavior of Ti/HFO2/Pt core shell nanowire systems and networks for neuromorphic architectures and discuss their potential application as ANNs. In prior studies, memristive architectures for neuromorphic computing are connected through a crossbar array of neurons. With a limit on the number of neurons and regular connectivity, the networks lack sparsity and randomness. As a result, they have high wiring cost and poor functional connectivity. To address such limitations, we have fabricated a random array of core-shell memristive wires to form the connectivity matrix for neuromorphic hardware. In the systems listed above, the conductive core (Pt or Ti) serves as the bottom electrode with a memristive shell (HfO2) that can be electroformed with a set of top electrodes (Ti or Pt) deposited on the surface. Prior to miniaturization, as proof of concept, the core-shell wire networks were fabricated using 20 μm tungsten fibers as conductive cores with tungsten oxide as memristive shells. After imprinting of top silver electrodes and electroforming, IV measurements revealed memristive behavior with switching between resistive states (i.e., LRS-HRS) at ±1 V. Subsequently, nanowire networks based on the Ti/HFO2/Pt system were fabricated using electron beam lithography (EBL). For example, in one embodiment, over 90 overlapping core (40 nm)-shell (5 nm) nanowires were written on a 200 μm × 200 μm write field. To complete the connectivity matrix, 64 nodes and individual vias connecting the resulting network to electrode pads were written and deposited. Network quantifying simulations revealed a small-world coefficient of 2.89, shortest path length of 3.61 and clustering coefficient of 0.057. After electroforming, the core-shell structures exhibited switching between LRS and HRS at ±7 V. In this presentation, the fabrication process and the memristive characteristics (endurance, resistance retention, pulse measurements, etc.) of the fabricated nanowire network structures will be discussed in detail.

Triphenylene‐Derived Electron Acceptors and Donors on Ag(111): Formation of Intermolecular Charge‐Transfer Complexes with Common Unoccupied Molecular States

Over the past years, ultrathin films consisting of electron donating and accepting molecules have attracted increasing attention due to their potential usage in optoelectronic devices. Key parameters for understanding and tuning their performance are intermolecular and molecule-substrate interactions. Here, the formation of a monolayer thick blend of triphenylene-based organic donor and acceptor molecules from 2,3,6,7,10,11-hexamethoxytriphenylene (HAT) and 1,4,5,8,9,12-hexaazatriphenylenehexacarbonitrile (HATCN), respectively, on a silver (111) surface is reported. Scanning tunneling microscopy and spectroscopy, valence and core level photoelectron spectroscopy, as well as low-energy electron diffraction measurements are used, complemented by density functional theory calculations, to investigate both the electronic and structural properties of the homomolecular as well as the intermixed layers. The donor molecules are weakly interacting with the Ag(111) surface, while the acceptor molecules show a strong interaction with the substrate leading to charge transfer and substantial buckling of the top silver layer and of the adsorbates. Upon mixing acceptor and donor molecules, strong hybridization occurs between the two different molecules leading to the emergence of a common unoccupied molecular orbital located at both the donor and acceptor molecules. The donor acceptor blend studied here is, therefore, a compelling candidate for organic electronics based on self-assembled charge-transfer complexes.

Hot‐Pressed Hybrid Electrodes Comprising Silver Nanowires and Conductive Polymers for Mechanically Robust, All‐Doctor‐Bladed Semitransparent Organic Solar Cells

AbstractFuture low‐cost, high‐throughput production of organic solar cells in roll‐to‐roll printing processes calls for all‐solution‐processable device architectures. Mechanical flexibility and robustness are mandatory to roll the solar foils during printing and to eventually comply with certain end‐user requirements. Here, we report on semitransparent organic solar cells, comprising top and bottom silver nanowire (AgNW) electrodes that were embedded into conductive poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The devices exhibited excellent robustness in bending experiments with radii of 5 and 2.5 mm as well as upon folding. To avoid short circuits from nanowires that could stick out of the bottom electrodes, the PEDOT:PSS:AgNW layers were flattened by hot‐pressing after deposition. All solar cells were fabricated in air by doctor blading and exhibited a clear (haze‐free) transparency due to the absence of bus bars. On photoactive areas of 0.5 cm2, power conversion efficiencies of 3.8 % were obtained.

The ultraviolet photodetection properties of gallium nitride/ silicon nanoporous pillar array

The accurate detection of ultraviolet light (UV) has been playing important roles in a variety of fields such as industrial and agricultural production, environmental monitoring and protection, defense and aerospace industries. Semiconductor materials have been widely used in fabricating various photodectors. As a representative of the first generation semiconductor materials, silicon has been applied to fabricate UV photodetector for a long time. For example, the first solid UV detectors were based on UV-enhanced silicon photodiode. Nevertheless, silicon-based photodiodes usually exhibit responses to visible light, which will cause serious disturbances for the detection of UV. Furthermore, crystal silicon is an indirect bandgap semiconductor, which decides that its conversion efficiency and therefore responsivity during the optoelectronic process would be low. All these shortcomings make the effort on developing novel UV photodetectors being both important and necessary. In the past years, great progresses have been achieved in preparing high-quality compound semiconductors with direct and wide bandgaps, and this provides a good opportunity for developing high-performance UV photodectors. As a III-V compound semiconductor with a direct and wide bandgap (~3.4 eV), gallium nitride (GaN) possesses the properties of high electronic mobility and heat conductivity, good chemical and thermal stability, and excellent anti-irradiation capability, and therefore is thought to be one of the most suitable materials for preparing UV detectors. Currently, high-quality GaN thin films are usually prepared by heteroepitaxy technology utilizing sapphire wafers as substrates. However, sapphire is an insulator, which can be used only as a mechanical support instead of a functional substrate and might bring additional technical difficulty in device integration. Such a problem might be solved by using silicon substrate, provided that the large lattice and thermal mismatch between silicon and GaN can be conquered, or it will cause serious problems relating to the device performance and operation stability. A proved method is through introducing nanostructured silicon substrates to construct GaN/Si heterojunction, by which the mismatches could be greatly diminished through a three-dimensional stress release mode at the GaN and silicon interface. Silicon nanoporous pillar array (Si-NPA) is a silicon hierarchical structure characterized by a regular array of well separated, micron-sized and highly nanoporous silicon pillars, and it has been proved an ideal template for preparing silicon-based heterstructures with high-quality interfaces. Here we will report that utilizing Si-NPA as substrates, GaN/Si-NPA nanoheterojunctions were prepared by growing GaN nanocrystallites using a chemical vapor deposition method. Through changing the deposition time, the surface morphology, chemical constitution, and electrical and photoluminescent properties of GaN/Si-NPA can be tuned effectively, and this provided a solid foundation for optimizing the device performance of the subsequently developed UV photodetectors. Through preparing ITO top transparent electrodes and silver back electrodes on these nanoheterojunctions, prototype UV photodectors with a device structure of ITO/GaN/Si-NPA/ sc -Si/Ag were prepared and the photodetection properties were studied. It was shown that high-quality UV detection can be realized without applying any bias, with the response and recovery time being ~0.12 s and ~0.24 s, respectively. For the monochromatic UV light with a wavelength of 340 nm, a responsivity of ~0.15 mA/W was achieved. These results might have provided a novel route for developing Si-based GaN UV photodetectors.

Inverted OPVs with MoS2 hole transport layer deposited by spray coating

Molybdenum disulphide (MoS2) exhibits high work function and high mobility, making it a promising candidate for electronic applications. Currently, most applications require high vacuum or high reaction temperature processes to deposit MoS2. Here, we report organic photovoltaic devices made by room-temperature spray-coating of liquid-exfoliated MoS2 suspension to form hole transport layer (HTL) on top of poly(3-hexylthiophene):phenyl-C60-butyric acid methyl ester bulk heterojunction. Such an approach is compatible with large area applications. Current-voltage data showed that fill factor of devices with MoS2 HTL is similar to the devices using poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) HTL. However, open circuit voltage and short circuit current density (Jsc) are reduced, with the amount of Jsc reduction depending strongly on active layer thickness. These results can be understood by the strong absorption of light by MoS2, reducing/eliminating the back reflection from the top silver electrode. The experimental results are corroborated by calculations using transfer matrix method.

Flexible resistive switching device based on poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)/poly(4-vinylphenol) (PVP) composite and methyl red heterojunction

To obtain a desired performance of non-volatile memory applications, heterojunction-based resistive switching devices have tremendous attractions. In this paper, we demonstrate resistive switching characteristics for heterojunction of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)/poly(4-vinylphenol) (PVP) composite and methyl red sandwiched in between bottom and top silver (Ag) electrodes. The proposed heterojunction layers are fabricated through spin coater at 3000 rpm for 60 s each, and the Ag electrodes are deposited through a commercialized inkjet printer DMP-3000 on polyethyleneterephthalate (PET) substrate. To verify the proposed device, the resistive switching on dual polarity voltage of ±10.2 V is measured over more than 500 endurance cycles. The paper also presents an Roff/Ron ratio which can adjust through an active layer’s area and a blending ratio of the PEDOT:PSS and PVP. By applying the area of 100 μm2 and the blending ratio of 3:1, we achieve the higher Roff/Ron ratio of 121, and its high resistance state (HRS) and low resistance state (LRS) are observed as 3000 kΩ and 24.7 kΩ, respectively. To maintain a long retention time, the device is encapsulated with PDMS, which changes a little variations of 52 Ω for HRS 498 Ω for LRS over 60 days. For the flexible realization to be utilized in wearable applications, it can be easily applied on a plastic substrate using printed technologies.