During the welding and service stages, the anisotropy of Cu6Sn5 between tin solder / Cu solder joints will lead to abnormal grain growth and fracture of Cu6Sn5, which will eventually lead to solder joint failure, so it is very important to study the alloying element indium (In) to reduce the anisotropy of Cu6Sn5. The effects of indium doping on the crystal structure, electronic structure and mechanical properties of η-Cu6Sn5 have been studied systematically by means of first-principles density functional theory. Through calculation, it is found that with the change of indium doping position, the crystal structure is slightly deformed, but remains stable. Indium doping changes the electronic structure of η-Cu6Sn5, and a new bonding peak is formed by the hybridization of Cu-d and In-s around -5.9eV. In addition, indium doping can significantly increase the mechanical properties of η-Cu6Sn5, including elastic modulus and hardness. Indium significantly reduces the anisotropy of η-Cu6Sn5, and the anisotropy decreases by nearly 80% at most. At the same time, the addition of indium can increase the fracture toughness of η-Cu6Sn5.
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