The conductive Sb doped tin oxide films on the SiO 2 substrate were prepared by r.f. sputtering. The dc conductivity and the third-order optical nonlinear susceptibility of Sb:SnO 2 films with the Sb doped atomic content in the range of 1.3∼39.2 at.% were investigated. The value of χ (3) varies in the range of 1.1 × 10 − 10 ∼1.7 × 10 − 10 esu with different Sb doped content, which were measured via a time-resolved optical Kerr effect technique using femtosecond laser pulses at 830 nm.