Titanium trisulfide monolayer (TiS3) is a quasi-1D crystal with promising applications in a range of fields, including photoelectrochemical cells and thermoelectrics. Despite the emerging importance of monolayer TiS3, little is known regarding its intrinsic defects. In this work, we systematically investigate the stability, electronic, and magnetic properties of native defects in single layer TiS3, using Density Functional Theory. We consider S and Ti monovacancies, divacancies, extended Ti-nS (n=2−8) vacancy complexes, S and Ti antisites, as well as their complexes. We show that the likelihood of the formation of sulfur vacancies is strongly dependent on the symmetrically inequivalent lattice site at which the S vacancy is located. Under S-rich conditions, single sulfur vacancies are shown to be energetically more favorable than divacancies. In contrast, under Ti-rich conditions sulfur divacancies are more favorable than single S vacancies. We show that STi and TiS1 are most likely to form under S-rich and Ti-rich conditions, respectively, with low formation energies of -10.42 eV and -9.18 eV, and are therefore likely to be prevalent in single layer TiS3. We further consider defect levels in the band-gap, and show that several of these intrinsic defects are potential n-type or p-type dopants, while others will form deep electron/hole traps. Further, we show that while a number of these intrinsic defects induce no spin in the host, most intrinsic defects will induce a net magnetic moment in the host. The commonality of these defects in TiS3, will significantly impact applications such as spintronics, thermoelectrics, and the manufacturing of electronic devices.