Three-dimensional Topological Insulator Research Articles

Stacking model of a three-dimensional second-order topological insulator manifesting quantum anomalous Hall effect

Stacking model of a three-dimensional second-order topological insulator manifesting quantum anomalous Hall effect

Exploring the effects of a one-dimensional periodic potential on a three-dimensional topological insulator

High mobility two-dimensional systems with superposed 1D lateral periodic potentials exhibit characteristic commensurability (Weiss) oscillations that reflect the interplay of the cyclotron radius at the Fermi level and the superlattice period. Here, we impose a one-dimensional periodic potential on strained HgTe, which is a strong 3D topological insulator. By tuning the Fermi level with top gates, the effects of the artificial potential can be studied in the bulk gap, where only Dirac surface states exist, in the conduction band, and in the valence band, where Dirac electrons and holes coexist. On the electron side, we observe clear commensurability oscillations whose period is governed by the carrier density of the top-surface Dirac electrons. Unexpectedly, weak commensurability oscillations are also observed in the valence band with a period that depends on both electron and hole density. Published by the American Physical Society 2024

Low-temperature magnetoresistance hysteresis in vanadium-doped Bi2−xTe2.4Se0.6 bulk topological insulators

Bi2−xTe2.4Se0.6 single crystals show gapless topological surface states, and doping (x) with vanadium allows to shift the chemical potential in the bulk bandgap. Accordingly, the resistivity, carrier density, and mobility are constant below 10 K, and the magnetoresistance shows weak antilocalization as expected for low-temperature transport properties dominated by gapless surface states of so-called three-dimensional topological insulators. However, the magnetoresistance also shows a hysteresis depending on the sweep rate and the magnetic field direction. Here, we provide evidence that such magnetoresistance hysteresis is enhanced if both three-dimensional bulk states and quasi-two-dimensional topological states contribute to the transport (x = 0 and 0.03), and it is mostly suppressed if the topological states govern transport (x = 0.015). It is proposed that the hysteresis in the magnetoresistance results from different spin-dependent scattering rates of the topological surface and bulk states. Generally, this observation is of relevance to the studies of topologically insulating materials in which both topological surface and bulk states exist.

Elastic three-dimensional phononic topological insulators with Dirac hierarchy

Elastic three-dimensional phononic topological insulators with Dirac hierarchy

Quasiparticle scattering in three-dimensional topological insulators near the thickness limit

Quasiparticle scattering in three-dimensional topological insulators near the thickness limit

Intrinsic free carrier absorption limited THz generation from Bi2Te3 and Bi2Se3 topological insulators

We investigate the influence of intrinsic free charge carriers on the ultrashort THz pulse generation efficiency of three-dimensional topological insulators (3dTIs). Wavelength dependence of the optical penetration depth of the femtosecond excitation pulses is exploited to vary the excitation volume within Bi2Te3 and Bi2Se3 crystals and accordingly, the free carrier population, to contribute to THz attenuation. The standard free carrier absorption (FCA) formalism is inadequate to explain wavelength-dependent enhancement in the THz emission as observed in the experiments. Within a modified framework, the THz attenuation by FCA is accounted for accurately, which consistently explains the experimental results for samples having different carrier density and mobility. We conclude that the THz generation efficiency of 3dTIs can be enhanced by engineering samples with high carrier mobility and low intrinsic carrier density and by using excitation wavelengths of minimal penetration depth.

Radiation of a short linear antenna above a topologically insulating half-space

The topological magnetoelectric effect is a unique macroscopic manifestation of quantum states of matter possessing topological order and it is described by axion electrodynamics. In three-dimensional topological insulators, for instance, the axion coupling is of the order of the fine structure constant, and hence, a perturbative analysis of the field equations is plenty justified. In this paper, we use Green’s function techniques to obtain time-dependent solutions to the axion field equations in the presence of a planar domain wall separating two media with different topological order. We apply our results to investigate the radiation of a short linear antenna near the domain wall.

Anisotropic Josephson Diode Effect in the Topological Hybrid Junctions with the Hexagonal Warping

Recently the diode effect in superconductivity became an active area of research. In particular, the three-dimensional topological insulators may be one of the most suitable materials to implement the superconducting diodes. It is common to consider only linear and quadratic terms of the topological insulator Hamiltonian in the low energy expansion. Typically the effect of the hexagonal warping is neglected. However, the hexagonal warping can be very significant in consideration of the transport properties of the TI materials, such as Bi2Se3 or Bi2Te3. In this theoretical work we present the study of the Josephson diode effect based on the topological insulator weak link. We address the question of the hexagonal warping influence on the Josephson diode effect. We argue that the warping term leads to the anisotropy of the Josephson diode effect.

Magnetization-induced phase transitions on the surface of three-dimensional topological insulators

Magnetization-induced phase transitions on the surface of three-dimensional topological insulators

Disorder-induced phase transitions in three-dimensional chiral second-order topological insulator

Disorder-induced phase transitions in three-dimensional chiral second-order topological insulator

Ultrastrong-coupled magnon–polariton in a dynamical inductor based on magnetic-insulator/topological-insulator bilayers

We theoretically study a magnon–polariton in a dynamical inductor consisting of a coil and a bilayer of ferromagnetic insulator (FI) with perpendicular magnetization and a three-dimensional topological insulator (TI). Taking into account the coherent magnetic-dipole (Zeeman) interaction as well as the dissipative spin pumping effect on the FI/TI interface, we formulate a dynamical permeability of the FI/TI bilayer and calculate a corresponding electric admittance of an RLC-circuit. As a result, the spin pumping gives rise to a competitive effect on the modes hybridization, whereas a huge level repulsion due to the coherent coupling, which reaches the ultrastrong coupling regime, is found at room temperature for realistic parameter sets. Our work may open a new avenue for designing on-chip microwave devices based on a magnon–polariton in the RLC-circuit.

The effect of charged particle irradiation on the transport properties of bismuth chalcogenide topological insulators: a brief review.

Topological insulators (TIs) offer a novel platform for achieving exciting applications, such as low-power electronics, spintronics, and quantum computation. Hence, the spin-momentum locked and topologically nontrivial surface state of TIs is highly coveted by the research and development industry. Particle irradiation in TIs is a fast-growing field of research owing to the industrial scalability of the particle irradiation technique. Unfortunately, real three-dimensional TI materials, such as bismuth selenide, invariably host a significant population of charged native defects, which cause the ideally insulating bulk to behave like a metal, masking the relatively weak signatures of metallic topological surface states. Particle irradiation has emerged as an effective technique for Fermi energy tuning to achieve an insulating bulk in TI along with other popularly practiced methods, such as substitution doping and electrical gating. Irradiation methods have been used for many years to enhance the thermoelectric properties of bismuth chalcogenides, predominantly by increasing carrier density. In contrast, uncovering the surface states in bismuth-based TI requires the suppression of carrier density via particle irradiation. Hence, the literature on the effect of irradiation on bismuth chalcogenides extends widely to both ends of the spectrum (thermoelectric and topological properties). This review attempts to collate the available literature on particle irradiation-driven Fermi energy tuning and the modification of topological surface states in TI. Recent studies on particle irradiation in TI have focused on precise local modifications in the TI system to induce magnetic topological ordering and surface selective topological superconductivity. Promising proposals for TI-integrated circuits have also been put forth. The eclectic range of irradiation-based studies on TI has been reviewed in this manuscript.

Electric field-dependent photoexcited spin-polarized electron transport in Bi2Se3 topological insulator

Three-dimensional (3D) topological insulators (TIs) exhibit spin-polarized surface states in which the spin of electrons is locked to their momentum. The helical surface states can be explored from circularly polarized light-induced spin photocurrent, a phenomenon called circular photogalvanic effect (CPGE). In this work, we fabricate a TI transistor with the Bi2Se3 channel layer synthesized using vapor deposition. The photocurrent response of Bi2Se3 TI is characterized under horizontal and longitudinal electric fields. CPGE and linear photogalvanic effect (LPGE) contribute to the surface state photocurrent at room temperature. The longitudinal electric field provides kinetic energy to the electrons so that the transition of electrons to higher energy bands in momentum space occurs. Under a photon excitation with the energy far above the TI bandgap, we observed a photocurrent difference between left and right circularly polarized light excitation. The photocurrent variation with gate voltage (longitudinal field) is also investigated. Adjusting the Fermi level with the gate bias leads to changes in the population of bulk state carriers and spin electrons in surface states. By shifting the gate bias toward negative, the CPGE current increases because of the reduced scattering with bulk carriers. Our work reveals that longitudinal and horizontal electric fields can manipulate the helical spin-polarized photocurrent of Bi2Se3. From the asymmetry of circularly polarized photoconductive differential current (CPDC) under the horizontal field, we found evidence of spin-polarized electron transition to other conduction band valleys at room temperature under a high-energy photon excitation.

Probing surface states: A study of UCF and WAL in Bi1.9Sb0.1Te2Se topological insulator

In the exploration of three-dimensional quaternary topological insulators, understanding surface states has become pivotal for unraveling the underlying physics and tapping into potential applications. Our study delves into the temperature and magnetic field-angle dependence of universal conductance fluctuations (UCF) and weak anti-localization (WAL) effects in a Bi1.9Sb0.1Te2Se topological insulator-based mesoscopic device. Conventionally, other low-temperature transport phenomena in probing surface states may inevitably face interference from three-dimensional bulk conductance. However, we experimentally demonstrate that, at low temperatures, UCF reflects the properties of two-dimensional topological surface states more accurately, thereby providing a more reliable and distinct way to confirm their existence. Moreover, we carefully analyze the temperature-dependent WAL using the Hikami–Larkin–Nagaoka model, proposing a crucial role for charge puddles associated with electrostatic fluctuations in the electron dephasing process. Our findings not only emphasize the key role of UCF in unveiling the underlying behavior of topological surface states but also offer a deeper understanding of phase-coherent transport in quaternary topological insulators.

Axion insulator state in hundred-nanometer-thick magnetic topological insulator sandwich heterostructures

An axion insulator is a three-dimensional (3D) topological insulator (TI), in which the bulk maintains the time-reversal symmetry or inversion symmetry but the surface states are gapped by surface magnetization. The axion insulator state has been observed in molecular beam epitaxy (MBE)-grown magnetically doped TI sandwiches and exfoliated intrinsic magnetic TI MnBi2Te4 flakes with an even number layer. All these samples have a thickness of ~ 10 nm, near the 2D-to-3D boundary. The coupling between the top and bottom surface states in thin samples may hinder the observation of quantized topological magnetoelectric response. Here, we employ MBE to synthesize magnetic TI sandwich heterostructures and find that the axion insulator state persists in a 3D sample with a thickness of ~ 106 nm. Our transport results show that the axion insulator state starts to emerge when the thickness of the middle undoped TI layer is greater than ~ 3 nm. The 3D hundred-nanometer-thick axion insulator provides a promising platform for the exploration of the topological magnetoelectric effect and other emergent magnetic topological states, such as the high-order TI phase.

Tuning three-dimensional higher-order topological insulators by surface state hybridization

Tuning three-dimensional higher-order topological insulators by surface state hybridization

Emergent one-dimensional helical channel in higher-order topological insulators with step edges

We study theoretically the electronic structure of three-dimensional (3D) higher-order topological insulators in the presence of step edges. We numerically find that a 1D conducting state with a helical spin structure, which also has a linear dispersion near the zero energy, emerges at a step edge and on the opposite surface of the step edge. We also find that the 1D helical conducting state on the opposite surface of a step edge emerges when the electron hopping in the direction perpendicular to the step is weak. In other words, the existence of the 1D helical conducting state on the opposite surface of a step edge can be understood by considering an addition of two different-sized independent blocks of 3D higher-order topological insulators. On the other hand, when the electron hopping in the direction perpendicular to the step is strong, the location of the emergent 1D helical conducting state moves from the opposite surface of a step edge to the dip (270° edge) just below the step edge. In this case, the existence at the dip below the step edge can be understood by assigning each surface with a sign (+ or −) of the mass of the surface Dirac fermions. These two physical pictures are connected continuously without the bulk bandgap closing. Our finding paves the way for on-demand creation of 1D helical conducting states from 3D higher-order topological insulators employing experimental processes commonly used in thin-film devices, which could lead to, e.g., a realization of high-density Majorana qubits.

All-optical observation of giant spin transparency at the topological insulator BiSbTe1.5Se1.5/Co20Fe60B20 interface

The rise of three-dimensional topological insulators as an attractive playground for the observation and control of various spin-orbit effects has ushered in the field of topological spintronics. To fully exploit their potential as efficient spin-orbit torque generators, it is crucial to investigate the efficiency of spin injection and transport at various topological insulator/ferromagnet interfaces, as characterized by their spin-mixing conductances and interfacial spin transparencies. Here, we use all-optical time-resolved magneto-optical Kerr effect magnetometry to demonstrate efficient room-temperature spin pumping in Sub/BiSbTe1.5Se1.5(BSTS)/Co20Fe60B20(CoFeB)/SiO2 thin films. From the modulation of Gilbert damping with BSTS and CoFeB thicknesses, the spin-mixing conductances of the BSTS/CoFeB interface and the spin diffusion length in BSTS are determined. For BSTS thicknesses far exceeding the spin diffusion length, in the so-called “perfect spin sink” regime, we obtain an interfacial spin transparency as high as 0.9, promoting such systems as scintillating candidates for spin-orbitronic devices.

Finite size effects on helical hinge states in three-dimensional second-order topological insulators

We investigate the finite size effects of a three-dimensional second-order topological insulator with fourfold rotational symmetry and time-reversal symmetry. Starting from the effective Hamiltonian of the three-dimensional second-order topological insulator, we derive the effective Hamiltonian of four two-dimensional gapped surface states by perturbative methods. Then, the sign alternation of the mass term of the effective Hamiltonian on the adjacent surface leads to the hinge state. In addition, we obtain the effective Hamiltonian and its wave function of one-dimensional gapless hinge states with semi-infinite boundary conditions based on the effective Hamiltonian of two-dimensional surface states. In particular, we find that the hinge states on the two sides of the same surface can couple to produce a finite energy gap.

Nondegenerate Integer Quantum Hall Effect from Topological Surface States in Ag2Te Nanoplates.

The quantum Hall effect is one of the exclusive properties displayed by Dirac Fermions in topological insulators, which propagates along the chiral edge state and gives rise to quantized electron transport. However, the quantum Hall effect formed by the nondegenerate Dirac surface states has been elusive so far. Here, we demonstrate the nondegenerate integer quantum Hall effect from the topological surface states in three-dimensional (3D) topological insulator β-Ag2Te nanostructures. Surface-state dominant conductance renders quantum Hall conductance plateaus with a step of e2/h, along with typical thermopower behaviors of two-dimensional (2D) massless Dirac electrons. The 2D nature of the topological surface states is proven by the electrical and thermal transport responses under tilted magnetic fields. Moreover, the degeneracy of the surface states is removed by structure inversion asymmetry (SIA). The evidenced SIA-induced nondegenerate integer quantum Hall effect in low-symmetry β-Ag2Te has implications for both fundamental study and the realization of topological magneto-electric effects.