Thin Silicon Layer Research Articles

A Highly Sensitive Plasmonic Graphene-Based Structure for Deoxyribonucleic Acid Detection

In this study, a Kretschmann structure with a hybrid layer of graphene–WS2 is designed to develop a sensitive biosensor for deoxyribonucleic acid detection. The biosensor incorporates a 45 nm gold layer as the active layer and a thin film of chrome as the adhesive layer. Through the optimization of the graphene and WS2 layers, combined with the implementation of a silicon layer, we can enhance the nano-sensor’s sensitivity. The thin silicon layer acts as a protective barrier for the metal, while also increasing the volume of interaction. Consequently, by adjusting the thickness of the active metal and adding a silicon layer, we achieve higher sensitivity and a lower full width at half maximum, leading to sensitivity of 333.33°/RIU. The designed structure is analyzed using numerical techniques and the finite difference time domain method, allowing us to obtain the optical characteristics of the surface plasmon polariton sensor. Various parameters are calculated and evaluated to determine the optimal conditions for the sensor. Furthermore, the total size of the sensor is 2.228 µm2.

Manipulating terahertz guided wave excitation with Fabry-Perot cavity–assisted metasurfaces

Metasurfaces are emerging as powerful tools for manipulating complex light fields, offering enhanced control in free space and on-chip waveguide applications. Their ability to customize refractive indices and dispersion properties opens up new possibilities in light guiding, yet their efficiency in exciting guided waves, particularly through metallic structures, is not fully explored. Here, we present a new method for exciting terahertz (THz) guided waves using Fabry-Perot (FP) cavity-assisted metasurfaces that enable spin-selective directional coupling and mode selection. Our design uses a substrate-free ridge silicon THz waveguide with air cladding and a supporting slab, incorporating placed metallic metasurfaces to exploit their unique interaction with the guided waves. With the silicon thin layer and air serving as an FP cavity, THz waves enter from the bottom of the device, thereby intensifying the impact of the metasurfaces. The inverse-structured complementary metasurface could enhance excitation performance. We demonstrate selective excitation of TE00 and TE10 modes with directional control, confirmed through simulations and experimental validations using a THz vector network analyzer (VNA) system. This work broadens the potential of metasurfaces for advanced THz waveguide technologies.

Design of a metasurface deflector for guided absorption enhancement in a Si PIN photodiode

We numerically demonstrated a surface-illuminated Si PIN photodiode (PD) structure with a metasurface composed of etched isosceles triangle pillars that can enhance sensitivity in the near-infrared wavelength range (NIR) by enabling directional scattering (DS) of photons. The metasurface is designed to act as a deflector to increase the absorption efficiency by extending the photon dwell time. This is particularly effective in thin intrinsic layers (i-layers) of silicon, surpassing the capabilities of conventional omnidirectional scattering gratings. Our results show a 3.5-fold increase in internal quantum efficiency over wavelengths above 0.9 µm compared to the structure without metasurface. The absorption enhancement brought about by directional scattering is not limited to thin i-layers; it can potentially improve a wide range of photodiode geometries and structures. Furthermore, the proposed structure, consisting of an all-Si layer and a simple geometric etching process, makes it compatible with foundry fabrication methods and opens up new possibilities for expanding applications of Si PDs.

Plasma deposited amorphous silicon passivation layers on InAs surfaces

The compound semiconductors (InAs, GaSb, AlSb) having nearly matched lattice constants (≈6.1 Å) are of great interest in fabrication of infrared micro/optoelectronics, but are hampered significantly by a high density of interface states that lead to degenerately doped surface layers. Native oxides are a cause of interface states, as well as a barrier to the effective passivation of dangling bonds, and must be removed. Re-oxidation must then be prevented prior to deposition of a passivant. We demonstrate effective removal of the native oxide of InAs through utilization of an amorphous silicon plasma enhanced chemical vapor deposition process. A hydrogen-diluted silane plasma provides a reducing environment to react and remove indium and arsenic oxide species while a thin layer of amorphous silicon is grown to passivate and prevent re-oxidation of the InAs surface. The reduction of native oxide species via hydrogen-diluted argon plasma as a pretreatment prior to amorphous silicon was also explored. The surface chemistry is verified via depth profiling X-ray photoelectron spectroscopy, and the impact of a hydrogen-argon plasma pretreatment investigated to further reduce oxygen concentration at the InAs/amorphous silicon interface.

Limit Efficiency of a Silicon Betavoltaic Battery with Tritium Source.

An idealized design of a silicon betavoltaic battery with a tritium source is considered, in which a thin layer of tritiated silicon is sandwiched between two intrinsic silicon slabs of equal width, and the excess charge carriers are collected by thin interdigitated n+ and p+ electrodes. The opposite sides of the device are covered with a reflecting coating to trap the photons produced in radiative recombination events. Due to photon recycling, radiative recombination is almost ineffective, so the Auger mechanism dominates. An analytical expression for the current-voltage curve is obtained, from which the main characteristics of the cell, namely, the open-circuit voltage, the fill factor, and the betaconversion efficiency, are found. The analytical results are shown to agree with the numerical ones with better than 0.1% accuracy. The optimal half-thickness of this device is found to be around 1.5 μm. The maximal efficiency increases logarithmically with the surface activity of the beta-source and has the representative value of 12.07% at 0.1 mCi/cm2 and 14.13% at 10 mCi/cm2.

Size effects in numerical homogenization of polycrystalline silicon

AbstractA current topic in the photovoltaic industry is the analysis and evaluation of possible structural and material properties. This requires the effective material characteristics of polycrystalline silicon, which is an important component for the functional performance of the photovoltaic modules in use. Since this assessment is associated with high costs, it is to be carried out already in the product development process. Due to very thin silicon layers, the effect of the layer thickness on the effective material characteristics has to be investigated (see ). In this work, a procedure to determine these characteristic values is listed to investigate the size effect on different film thicknesses of this material (see ). With the knowledge of the properties of the silicon single crystal with its cubic symmetry on the micro level, a homogenization of the properties to the macro level can be done. The polycrystal structure with a cubic sample geometry forms the macro level. This structure is now cut into thinning layers for investigation. The open‐source software Neper is used to create the crystal structure and the inter‐connectivity for this purpose. With the help of Matlab, this information is passed on to the finite element program Abaqus, where the results are evaluated after an elastic calculation using Python. The focus is on the expected change in material properties as a function of the layer thickness.

Thermal treatment of stainless steel substrates along with a thin silicon layer for high temperature solar thermal applications

Solar energy harvesting in solar thermal systems using different solar absorber coatings on collectors has been widely studied. Here, we incorporate a single layer Si (∼250 nm) onto one of the most common and cost-effective collector materials, i.e., stainless steel (SS304) to improve its optical performance by thermal treatment. During the heating cycle, the samples were heated at 900 °C for short durations and suddenly quenched to room temperature in air. A high solar absorptance of 0.92 along with an emittance of 0.37 were obtained after heat-treatment. The reflectance studies showed reduced uniform reflectance (<10%) over the entire UV–Vis-NIR region and high reflectance in the far IR region. The morphology, composition, and crystal structures were studied in detail. The Si layer and the quenching process aided in the formation of a highly irregular microstructure consisting islands of Cr-Fe-Mn-Si oxides and silicides (with trace amount of Ni) which in turn increases surface roughness. This irregular array of islands of varying sizes and varying gaps between them helps in increasing absorptance due to multiple reflections, scattering and diffraction effects. Similar studies carried out on SS202 substrates resulted in different surface morphology and hence different absorptance (0.84), suggesting that the surface morphology and absorptance are highly dependent on the substrate composition. The initial thermal stability data on heat-treated Si/SS304 suggests stability up to 700 °C in air for 1000 hrs. Our studies indicate that thermal treatment of Si/SS304 for a short duration is a plausible solution to develop cost effective high temperature solar thermal collectors.

A high-performance doping-less tunnel FET with pocketed architecture: proposal and analysis

In this paper, we propose a doping-less dual-material double-gate tunnel field-effect transistor with a P+ pocket (PP-DMG TFET). This gate-engineered technique is typically used in a MOSFET to improve device performance. The P+ pocket is embedded at the source side to enhance the performance of the pocket-engineered PP-DMG TFET device. This paper compares the performance of four DG-TFET-based devices, i.e. single-material gate (SMG), single-material gate with P+ pocket (PP-SMG), dual-material gate (DMG), and dual-material gate with P+ pocket (PP-DMG), by using 2D simulations. Electrostatic doping based on the charge plasma concept forms the requisite n–i–p+ structure for tunneling formed on a thin intrinsic silicon layer. The proposed device (PP-DMG) has high ON-current capability, a high ON/OFF ratio and lower point subthreshold of 15.3 mV/dec, and an average subthreshold of 18.6 mV/dec. The analog parameters transconductance (gm) and cutoff frequency (fT) show impressive improvement. The device efficiency and transconductance frequency product (TFP) are also discussed. Finally, linearity and distortion analysis of parameters including VIP2, VIP3, IIP3, and IMD3 is carried out.

Nonlocal metasurface for circularly polarized light detection

Modern-day sensing and imaging applications increasingly rely on accurate measurements of the primary physical quantities associated with light waves: intensity, wavelength, directionality, and polarization. These are conventionally performed with a series of bulky optical elements, but recently, it has been recognized that optical resonances in nanostructures can be engineered to achieve selective photodetection of light waves with a specific set of predetermined properties. Here, we theoretically illustrate how a thin silicon layer can be patterned into a dislocated nanowire-array that affords detection of circularly polarized light with an efficiency that reaches the theoretical limit for circular dichroism of a planar detector in a symmetric external environment. The presence of a periodic arrangement of dislocations is essential in achieving such unparalleled performance as they enable selective excitation of nonlocal, guided-mode resonances for one handedness of light. We also experimentally demonstrate compact, high-performance chiral photodetectors created from these dislocated nanowire-arrays. This work highlights the critical role defects can play in enabling new nanophotonic functions and devices.

Electronic structure simulation of thin silicon layers: Impact of orientation, confinement, and strain

Silicon-on-insulator is a key technology to support the continuation of Moore’s law. This publication investigates the impact of orientation, confinement, and strain on the electronic structure of thin silicon slabs using density functional theory. The comparative study of low-index orientations demonstrates that confinement not only widens the band gap but also transforms the band gap type. For thin silicon layers, strain can alter band gap and band gap type, too. By comparing our findings for different crystal orientations, we demonstrate that the consideration of the electronic structure of strained and confined silicon is of high relevance for modelling actual devices.

Fabrication of Compliant and Transparent Hollow Cerebral Vascular Phantoms for In Vitro Studies Using 3D Printing and Spin-Dip Coating.

Endovascular surgery through flow diverters and coils is increasingly used for the minimally invasive treatment of intracranial aneurysms. To study the effectiveness of these devices, in vitro tests are performed in which synthetic vascular phantoms are typically used to reproduce in vivo conditions. In this paper, we propose a manufacturing process to obtain compliant and transparent hollow vessel replicas to assess the mechanical behaviour of endovascular devices and perform flow measurements. The vessel models were obtained in three main steps. First, a mould was 3D-printed in a water-soluble material; two techniques, fusion deposition modelling and stereolithography, were compared for this purpose. Then, the mould was covered with a thin layer of silicone through spin-dip coating, and finally, when the silicone layer solidified, it was dissolved in a hot water bath. The final models were tested in terms of the quality of the final results, the mechanical properties of the silicone, thickness uniformity, and transparency properties. The proposed approach makes it possible to produce models of different sizes and complexity whose transparency and mechanical properties are suitable for in vitro experiments. Its applicability is demonstrated through idealised and patient-specific cases.

Reflection Coefficient Calculation of a Structure Including a Porous Silicon Layer with Transfer Matrix Method and FDTD

Porous silicon is an important material for a variety of application area such as anti-reflective coating for solar cells. Today, solar cell market is mostly dominated by silicon based solar cells. Porous silicon thin films are easy to fabricate and it is compatible with silicon technology. Designing porous silicon anti-reflective coating layers is a critical issue to enhance silicon based solar cell performance. There are several methods to calculate reflection coefficient of porous silicon thin layers. In this study, transfer matrix method and finite-difference time-domain method are used to calculate reflection coefficient of porous silicon thin layers. Because finite-difference time-domain method gives more accurate results, the results obtained with finite-difference time-domain method are used to control the results obtained with transfer matrix method. In transfer matrix method, refractive indices of the porous silicon layers are calculated with Bruggeman effective medium approximation.

A Dual-Band Guided Laser Absorber Based on Plasmonic Resonance and Fabry-Pérot Resonance.

We numerically investigated a dual-band metamaterial absorber based on the combination of plasmonic resonance and Fabry–Pérot (FP) resonance, which can achieve near-unity absorption for guided lasers. The absorber is constructed by a three-layer metal-insulator-metal (MIM) periodic configuration. In each unit cell, there is a gold-silicon cross on a thin silicon layer and a bottom nickel film. Numerical results show that, at normal incidence, the structure strongly absorbs light at wavelengths of 1.064 μm and 10.6 μm, with absorption rates higher than 94%. It is revealed that the two absorption peaks result from FP resonance in the thin silicon layer and plasmonic resonance in the cross, respectively. In addition, the absorber is polarization insensitive and is tolerant to the incident angle. The proposed combination of different resonances has the advantage of easily producing double absorption peaks with very large wavelength differences, and provides a new approach to the design of metamaterial absorbers.

Quasi-dark resonances with antiferromagnetic order in silicon metasurfaces

Quasi-dark resonances exhibiting antiferromagnetic order are theoretically investigated in a near-infrared metasurface composed of square slotted rings etched in a thin silicon layer on glass substrate. Access to the quasi-dark mode is achieved by reducing the symmetry of the metasurface according to the findings of a detailed group theory analysis. A thorough finite-element study reveals the key optical properties of the antiferromagnetic order quasi-dark mode, namely resonant wavelengths, quality factors, angular dispersion, and its robustness against optical extinction losses. It is demonstrated that the thickness of the silicon metasurface can adjust the asymmetry degree of the resonant Fano lineshape without affecting substantially its quality factor. Furthermore, tuning of the resonant wavelength can be achieved without significant modification of the Fano lineshape by controlling the angle of incidence of the impinging planewave. Overall, the work presents an all-dielectric, near-infrared metasurface for the excitation of sharp resonances with antiferromagnetic order, which can find use in emerging applications based on this particular configuration of artificial optical magnetism and/or strong field confinement and light-matter interaction.

A Temperature Sensor Exploiting Plasmonic Phenomena Changes in Multimode POFs

A novel sensing method for temperature measurements of liquids, exploiting plasmonic resonance in multimode plastic optical fibers (POFs), has been devised. The possibility to measure the temperature is useful in several application fields of plasmonic sensors, such as when a binding test between a receptor and an analyte occurs, considering that the binding parameters are a function of the temperature. The novel temperature sensor consists of two different D-shaped POF connected in a cascade. The first element is a thermosensitive platform with a thin silicone layer on the POF core, whereas the second is a conventional surface plasmon resonance (SPR) D-shaped POF sensor. The operating principle of the novel temperature sensor is based on the variations of light launch conditions in the SPR-POF sensor as a consequence of the temperature changes in the solution covering the thermosensitive platform. In this way, the input light ray angle changes with the temperature, producing a shift in resonance wavelength conditions. The proposed sensor has been tested, as proof of concept, in a temperature range from <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$20^{\circ }\text{C}$ </tex-math></inline-formula> to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$38^{\circ }\text{C}$ </tex-math></inline-formula> with a step size of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$3^{\circ }\text{C}$ </tex-math></inline-formula> , to establish the role of the silicone layer on the thermosensitive platform and the best configuration in terms of sensitivity.

Ligand-mediated CsPbBr x I3− x /SiO2 quantum dots for red, stable and low-threshold amplify spontaneous emission

The red-emitting perovskite material has received widespread attention as a long-wavelength optical gain media. But the easy phase change in the air limits its practical application. Herein, red CsPbBr x I3−x /SiO2 quantum dots (QDs) are prepared by a ligand-mediated hot injection method in which 3-aminopropyl-triethoxysilane (APTES) is used instead of the usual oleylamine (OAm) ligand. Through the hydrolysis of amino groups, a thin silicon layer is formed on the QD surface, improving the stability and without causing the aggregation of QDs. We find that the ratio of I/Br and the size of QDs can be tuned by adjusting the APTES amount. Moreover, this ligand-mediated synthesis effectively passivates the surface defects, so the photoluminescence quantum yield is remarkably improved, and the carrier lifetime is prolonged. The amplified spontaneous emission is achieved under 532 nm nanosecond laser excitation. Compared with the original CsPbBrI2-OAm QD films, the threshold of CsPbBr x I3−x /SiO2 QD films is reduced from 403.5 to 98.7 μJ cm−2, and the radiation stability is significantly enhanced. Therefore, this material shows great potential in the random laser field.

Valley population of donor states in highly strained silicon

Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valley degeneracy of the six conduction band minima, and by extension the valley states of electrons bound to phosphorus donors. Here, single phosphorus atoms are embedded in an engineered thin layer of silicon strained to 0.8% and their wave function imaged using spatially resolved spectroscopy. A prevalence of the out-of-plane valleys is confirmed from the real-space images, and a combination of theoretical modelling tools is used to assess how this valley repopulation effect can yield isotropic exchange and tunnel interactions in the xy-plane relevant for atomically precise donor qubit devices. Finally, the residual presence of in-plane valleys is evidenced by a Fourier analysis of both experimental and theoretical images, and atomistic calculations highlight the importance of higher orbital excited states to obtain a precise relationship between valley population and strain. Controlling the valley degree of freedom in engineered strained epilayers provides a new competitive asset for the development of donor-based quantum technologies in silicon.

Strongly Nonlinear Superconducting Silicon Resonators

Superconducting boron-doped silicon is a promising material for integrated silicon quantum devices. In particular, its low electronic density and moderate disorder make it a suitable candidate for the fabrication of large inductances with low losses at microwave frequencies. We study experimentally the electrodynamics of superconducting silicon thin layers using coplanar waveguide resonators, focusing on the kinetic inductance, the internal losses, and the variation of these quantities with the resonator readout power. We report the observation in a doped semiconductor of microwave resonances with internal quality factors of a few thousand. As expected in the BCS framework, superconducting silicon presents a large sheet kinetic inductance in the 50--500-pH range, comparable to that of strongly disordered superconductors. The temperature dependence of the kinetic inductance is well described by the Mattis-Bardeen theory. However, we find an unexpectedly strong nonlinearity in the complex surface impedance that cannot be satisfactorily explained either by depairing or by quasiparticle heating.

Integrating porous silicon layer backing to capacitive micromachined ultrasonic transducers (CMUT)-based linear arrays for acoustic Lamb wave attenuation

Lamb waves propagating in the substrate of linear arrays integrated on a silicon (Si) chip may degrade the elementary performances of the imaging device. In fact, these waves are radiated in the imaging medium. Their superimposition with the relevant ultrasonic signals alters the image performances (i.e., lateral and axial resolutions). In this article, we investigate the interest of using a thin layer of porous silicon (PS) as an absorbing material, aiming to reduce the total device dimensions compared to more traditional backing materials and facilitate device integration with on-chip electronics. The proposed method was applied to Capacitive Micromachined Ultrasonic Transducers. To this purpose, a PS layer with a thickness of 60 μm and a porosity of 50% was etched on the rear side of a 256-elements linear array. The electroacoustic response of the elements integrated on the Si substrate was compared to those on the Si/PS substrate, showing no deterioration of the acoustic characteristics (i.e., center frequency and bandwidth) after PS layer fabrication. To assess the PS silicon layer influence on Lamb wave attenuation, acoustic cross-talks were measured for each array element. The radio-frequency dataset was used to determine the dispersion curves of Lamb waves in the substrate. The comparison between the two substrates showed a significant attenuation value (superior to 30 dB) of Lamb waves induced by the PS layer.

Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing

A thorough study of the phosphorus (P) heavy doping of thin Silicon-On-Insulator (SOI) layers by UV nanosecond Laser Thermal Annealing (LTA) is presented in this work. As a function of the implant dose and laser annealing conditions, the melting regimes and regrowth processes, as well as the redistribution and activation of P in the top-Si amorphized layer, were investigated. The findings emphasize the critical role of the thin crystalline silicon layer that remains after the top-Si layer amorphizes, as it provides nucleation seeds for liquid phase recrystallization. The effect of the implant dose on the recrystallization process is thoroughly investigated in terms of melt energy thresholds, crystallographic nature of the resolidified layer, defect formation, surface roughness, and the formation of hillocks on the silicon surface. Optimized laser annealing conditions, corresponding to the laser energies just preceding the onset of the full melt, were identified for all implanted doses. Such optimized layers have perfect crystallinity, negligible P out-diffusion, a nearly perfectly flat P depth profile located below the segregation-induced surface pileup peak, and dopant active concentrations well above 1021 cm−3, which is close to the highest reported values for phosphorus in bulk Si substrates.