CdTe Thin Films Research Articles

Elucidating the microstructural and optoelectronic properties evolution of sputtered Al-doped MZO thin films

This study involves the deposition of magnesium-doped zinc oxide (MZO) thin films through radio frequency (RF) magnetron sputtering, followed by annealing at temperatures of 350 °C, 450 °C, and 550 °C. Since there is no significant impact of annealing temperatures on MZO thin films, MZO and aluminium-doped zinc oxide (AZO) were co-sputtered to deposit Al-doped MZO (AMZO) thin films. The grown AMZO films were subsequently annealed at 350 °C, 450 °C and 550 °C to regulate their microstructural and optoelectronic characteristics. The X-ray diffraction (XRD) analysis revealed that AMZO films exhibited a predominant (0 0 2) orientation with a single intense diffraction peak, showcasing a wurtzite structure. The field emission scanning electron microscopy (FESEM) presented an increment in grain size for MZO and AMZO films from 31.3 to 64.7 nm and 57.0–64.8 nm, respectively. Furthermore, the atomic force microscopy (AFM) analysis demonstrated a substantial reduction in surface roughness from 1.67 to 1.58 nm for AMZO films annealed at 550 °C compared to MZO films. Notably, the optical band gap changed from 3.64 to 3.32 eV, which was influenced by both the Al content and annealing temperature. The carrier concentration for as deposited and annealed MZO films remained in the orders of 1014 cm−3, whereas AMZO and AMZO films annealed at 550 °C exhibited higher carrier concentrations, in the orders of 1016 cm−3 and 1020 cm−3, respectively. Remarkably, low resistivity (2.10 × 10−2 Ω cm) was observed for AMZO films annealed at 550 °C. Based on these findings, AMZO films exhibited prospect as a buffer layer for CdTe thin films solar cell applications.

Investigating the Suitability of Cu2ZnSnS4 Thin Films for Gamma Radiation Dosimetry Applications in Non-Medical Environments

Abstract The need for the replacement of cadmium, indium, and tellurium in their compounds for sensor applications is a novel study. The Cu2ZnSnS4 thin films were synthesized from Cu (99.99%), Sn (99.99%), and Zn (99.99%) using thermal evaporation method. The same volumetric parameters were maintained throughout the synthesis process. The films were further irradiated using an isotope of cesium-137 from a gamma source at different doses (0–0.6 kGy) and dose rates of 0.1007 kGy/hr at room temperature. Both the pristine and irradiated films were characterized with Raman spectroscopy, field emission scanning electron microscope (FESEM), energy dispersive X-rays (EDX), UV-Vis spectroscopy, and four-point probe techniques. The Raman results confirmed that all the films for both pristine and irradiated films have a main and secondary phases. The EDX results showed the pristine and 0.1 kGy films were Cu-rich film, while the 0.3 kGy and 0.6 kGy films turned out to be Zn-rich films with an increase in gamma dose. The optical property of all the films showed that the band gap decreased from 1.6 eV to 1.48 eV for the pristine and irradiated films. While the electrical resistivity results decreased after irradiation dose. The structural, optical, and electrical properties results responded linearly with the increasing gamma radiation dose, which suggested the possibility of using films as a new solid-state sensor to replace CdTe and CIGS thin films.

Modelling and Performance Analysis of CdTe Thin Film PV Module for the Growth in Photovoltaics in Wide Geographical Areas

Modelling and Performance Analysis of CdTe Thin Film PV Module for the Growth in Photovoltaics in Wide Geographical Areas

Preparation of CdTe thin films using seed method

Preparation of CdTe thin films using seed method

Strain-dependence of Te interstitial diffusion in CdTe

While the dominant defects which control non-radiative recombination and long-range interstitial diffusion in CdTe correspond to Cd vacancies and Te anti-sites, the short-range diffusion of Te and Se interstitials between these defects is also of interest, since they both play a role in defect passivation. In addition, since CdTe thin films are typically polycrystalline and may also involve interfaces with materials with different lattice constants, the effects of strain are also of interest. Here we present the results of molecular dynamics (MD) simulations of Te interstitial diffusion in zincblende CdTe for values of the triaxial strain ranging from −2% (compressive) strain to +2.8% (tensile) strain. By carrying out MD simulations of Te interstitial diffusion over a range of temperatures, and then carrying out Arrhenius fits, we have determined the effective activation barrier Ea and prefactor D 0 for each value of the global strain. We find that both Ea and D 0 exhibit non-monotonic behavior, increasing with both compressive and tensile strain. We also present an analysis of the key diffusion pathways for 3 different values of the strain which explains the non-monotonic strain dependence obtained in our simulations. Our results also indicate that in each case, the diffusion of interstitial Te involves a variety of concerted events with a wide range of activation barriers.

Exploring Temperature-Dependent bandgap and Urbach energies in CdTe thin films for optoelectronic applications

This study examines CdTe thin films deposited via RF magnetron sputtering, focusing on structural and optical properties. X-ray diffraction, Raman spectroscopy, and SEM assessed structural characteristics. Optical properties were analyzed through transmittance measurements from 10 to 300 K. Tauc plots and Varshni modeling revealed a temperature-dependent bandgap, increasing from 1.49 eV at room temperature to 1.57 eV at 10 K. Urbach energy rose from 82.7 to 93.7 meV with temperature. These results are essential for applications where temperature affects CdTe-based device performance.

Combinatorial Separation of Cd and Te from CdTe via Chemical Vapour Transport with Sulfur and Air/Methane Treatment for the Recovery of Critical Resources from Thin Film Solar Cells.

Elemental Te and Cd are successfully recovered from CdTe via a combinatorial process involving chemical vapor transport (CVT) using sulfur as transport agent giving elemental Te being deposited. Separation is successfully enabled by the first process for CVT of Te starting with CdTe. Cd is subsequently recovered by an oxidation of the formed CdS to CdO followed by reduction to Cd metal with natural gas, in which Cd can also be separated via the gas phase. Hereby, the process addresses the main critical elements of the active material in thin film CdTe solar cells regarding both, scarcity and toxicity. Both, closed and open systems were investigated displaying more or less thermodynamic control of the system. Transport rates were determined for the closed system as well as for an open system working with sulfur vapour at moderate temperatures below and close to the boiling point of sulfur. Excellent purity of tellurium was achieved already by the initial transport, leading to low Cd2+ concentrations in the obtained Te being below the quantification limit of microwave plasma-atomic emission spectroscopy (MP-AES) (≪0.05 wt %).

The significance of bilayer window (CdS:O/CdS) on the performance of CdTe thin film solar cells

Ultrathin and compact CdS:O/CdS bilayer window in CdTe solar cells has higher potential for enhanced p-type doping, reduced Te diffusion, and improved power conversion efficiency (PCE) compared to traditional single-layer CdS or CdS:O windows. In this effort, we used a two-gun RF sputtering equipment to deposit compact CdS:O (∼50 nm)/CdS(∼50 nm) bilayers onto the borosilicate and ITO-coated glass substrates at low temperature (≤250 °C). Intriguingly CdS:O/CdS bilayers retain its hexagonal {0002} preferential orientation but with around 10.58 % optical bandgap (Eg) increment compared to CdS (Eg ≈ 2.32 eV) of equal thickness (∼100 nm). Close-spaced sublimation (CSS) technique was used to deposit the CdTe thin film onto the CdS and CdS:O/CdS layers at 650 °C. The effect of CdS and CdS:O/CdS layers on the microstructural and morphological features of CdCl2-treated CdTe films were critically analyzed in revealing a promising {0001}/{111}-like partial-epitaxy presumably due to the preferential cubic CdTe growth along the <111> orientation. The CdTe films grown over a CdS:O/CdS layer exhibited smaller average crystallite and grain sizes than those grown over a single CdS layer. An essential finding was the formation of an optimal intermix layer of CdSxTe1-x, particularly evident in the CdTe films grown on the CdS:O/CdS bilayer. To comprehensively explore the effect of CdS:O/CdS window layers on PCE, complete CdTe solar cells were fabricated using three different window layers: CdS, CdS:O, and CdS:O/CdS, which are all considered as rudimentary as no layer optimization was performed. Notably, CdTe solar cell that incorporates the CdS:O/CdS bilayer window exhibited the most promising performance among all the tested rudimentary cells and corroborated the numerically simulated findings conducted by the SCAPS-1D simulator.

Structural and optical properties of CdTe thin film nanoparticles prepared using chemical bath deposition technique with different Te concentration

Abstract The CdTe thin films with different Te concentration were grown by chemical bath deposition technique using glass substrates. The prepared thin films were characterized by X-ray diffraction (XRD), Raman spectroscopy, UV–Visible diffuse reflectance spectroscopy, photoluminescence (PL). The X-ray diffraction (XRD) analysis shows that the prepared thin films are polycrystalline in nature with Zinc blend structure. Decrease in the intensities of XRD peak for decreasing the Te concentration. The characteristic phonon modes of CdTe thin film nanoparticle confirmed by Raman spectra analysis. Optical absorption studies shows that direct transition with decrease in band gap energy with decreasing the Te molar concentration. Green emission was observed for prepared CdTe thin films excited with 325 nm.

Preparation of CuSe nanoparticles by antisolvent process for doping and passivation of absorber layer in CdTe solar cells

The p-type doping and passivation of the back surface of the CdTe absorber layer are two key steps to enhance the performance of CdTe thin film solar cells. In recent years, different Cu-doped precursors (Cu (I) and Cu (II) materials) and passivation materials (elements such as Se, Cl, Al, etc.) have been investigated. However, few researchers have proposed in new materials on both doping and passivation functions for backside applications. Here, CuSe, which combines the potential of p-type doping and Se passivation functions, is proposed for the first time as a doping precursor for the CdTe absorber layer. A certain amount of CuSe nanoparticles was deposited on the back surface of the CdTe absorber layer based on an antisolvent deposition process. The results show that the optimal device open-circuit voltage of the CuSe-treated CdTe solar cell reaches 842.5 mV, which is ∼ 6.5 % higher than that of the CuCl2-treated CdTe device (791.4 mV). The results of current-voltage and Mott-Schottky, impedance spectrum show that the CuSe-treated CdTe device not only achieves the purpose of p-type doping, but also introduces the passivation function of Se.

Detailed modeling and numerical analysis of thermo mechanical stresses in the crystalline silicon and thin film PV modules under varying climatic conditions

The present manuscript provides an in-depth analysis of the modeling and simulation of thermo-mechanical stresses in photovoltaic panels using finite element (FEM) analysis. It covers important aspects such as the choice of the model, including governing equations, boundary conditions, and simplifying assumptions. The study mainly focuses on evaluating the impact of environmental conditions on the thermo-mechanical stresses of first-generation c-Si and second-generation thin-film CdTe and a-Si PV panels in five different climatic zones in Algeria. The proposed transient 3D numerical model is validated against experimental measurements by other researchers and the tabulated values of the nominal operating temperature of the cell (NOCT). The obtained results indicate that the first principle stress for the c-Si cell is lower compared to CdTe and a-Si cells; this can be explained by looking at the thickness, as well as the Young modulus of the solar cell. Consequently, in regions or countries with hot climatic conditions or large temperature gradients, it is recommended to use PV panels based on first-generation c-Si cells with glass-glass as the front and back covers.

Towards the fabrication of flexible thin film CdTe solar cells: The significance of substrate surfaces

Thin film CdTe solar cells have been recognized as reliable alternative for the manufacture of cheap photovoltaic solar cells of the future, due to its excellent absorber characteristics and simple, low-cost manufacturability. However, for the attainment of higher cell performances, additional studies are needed to increase cell efficiency through further development of better quality films and new fabrication processes. In the substrate-structured CdTe thin film solar cells, the CdTe absorber layer is deposited directly onto the substrate or through a back contact layer. But the quality of deposited film is believed to depend on the type and smoothness of the substrate. In this work CdTe was deposited on different substrates by RF sputtering and the effects on the deposited films were studied in terms of their structural and morphological forms. The substrates used were: pure molybdenum sheets (Mo), molybdenum-sputtered on molybdenum (Mo/Mo), molybdenum-sputtered polyimide (PI/Mo) and molybdenum-sputtered glass (glass/Mo). The characterization tools used included XRD, SEM and AFM. The results showed that all surfaces produced uniform, compact and pinhole-free films; however, those on smoother surfaces produced larger as-deposited grain sizes of up to1.7μm as against 1.3 for rougher surfaces. Non-uniformities such as overgrowth and voids were observed, but only films on PI showed evidence of cracking and peel-offs.

Morphological, Optical, and Electrical Studies of PVD CdTe Thin Films for Photovoltaic Applications

Nano-crystalline CdTe films were coated on glass and silicon substrates using the vacuum evaporation (PVD) technique, with annealing temperatures of 25, 100, 150, and 200 °C. This study aims to create a simple photoelectric cell using the effective light-absorbing layer CdTe as a thin film and Si as an n-type semiconductor. Additionally, it investigates the properties of CdTe thin films annealed at various temperatures. The following equipment was used: XRD, UV-visible spectrophotometer, SEM, and AFM. Moreover, the electrical characteristics of the fully designed devices were tested using I-V measurements and the Hall effect. Thin-film photovoltaics could become the primary source of global electricity. The CdTe thin films were coated using thermal evaporation. The best efficiency was 0.99% for the CdTe/Si structure with Voc = 5.0 x 10-1 V, Jsc = 51.0 x 10-2 mA/cm2, FF = 0.39, at 25 °C, and the efficiency decreased with increasing temperature. It has been found that annealing temperatures have an impact on the size of crystallites, the values of energy gaps, and the electrical properties of CdTe thin films.

Characterization of CdS/CdTe Ultrathin-Film Solar Cells with Different CdS Thin-Film Thicknesses Obtained by RF Sputtering

The development of semitransparent CdS/CdTe ultrathin solar cells has been delayed as a result of the activation annealing to which the device must be subjected, which may involve problems such as the sublimation of ultrathin films and the diffusion of Cd and S at the interface. In this work, CdS/CdTe ultrathin devices on soda-lime glass/SnO2:F/ZnO substrates were obtained by RF magnetron sputtering. CdS/CdTe ultrathin heterostructures were obtained with the following thicknesses for the CdS thin film: 70, 110, and 135 nm. The CdTe thickness film was kept constant at 620 nm. Subsequently, activation annealing with CdCl2 was carried out at 400 °C. Surface characterization was performed by scanning electron microscopy, which indicated that the CdCl2 annealing tripled the CdTe thin films’ grain size. Raman characterization showed that CdS thin films deposited by RF sputtering present the first, the second, and the third longitudinal optical modes, indicating the good crystallinity of the CdS thin films. The study showed that the photovoltaic properties of the CdS/CdTe ultrathin devices improved as the CdS thicknesses decreased.

Textured CdTe Thin Films on Silicon and Sapphire Substrates: Thermal Vapor Deposition and Structural Characterization

Textured CdTe Thin Films on Silicon and Sapphire Substrates: Thermal Vapor Deposition and Structural Characterization

Chemical bath deposited CdTe thin film: Optical, electrical, and photoresponse aspects

Owning a narrow bandgap, remarkable optical and electrical properties with notable stability has made cadmium telluride (CdTe) an immensely vital semiconductor to develop cutting-edge optoelectronics. Taking these properties in to account, CdTe thin film is deposited employing the chemical bath deposition (CBD) technique. The X-ray diffraction analysis of the as-deposited thin film unveiled the composite crystalline structure, incorporating cubic, hexagonal, and tetragonal phases. The energy dispersive X-ray analysis and X-ray photoelectron spectroscopy ascertained the chemical composition of CdTe thin film. Distinctive Raman peaks are detected at 141 and 167 cm−1, signifying the presence of Cd-Te bond in the deposited thin film. The comprehensive evaluation of scanning electron micrographs emphasized the firm adhesion of the film to the substrate and displayed a uniform overlay of microstructures resembling rods. The observations from atomic force microscopy unveiled uniform grain structure with topographical features of hills and valleys. The UV-Visible spectroscopic examination elucidated that the as-deposited thin films exhibits a direct optical bandgap value of 1⋅59 eV. Temperature-dependent analysis of d.c. electrical resistivity exhibited a descending pattern, substantiating thin film's semiconducting attributes. The investigation into the photoresponse attributes of the thin film is accomplished by subjecting it to a polychromatic light, green and red monochromatic light source with an intensity of 50 mW/cm² employing three different biasing voltages. The thin film demonstrated maximum photocurrent for red light source than polychromatic and green light with maximum responsivity of 59⋅4 μA/W and detectivity of 17⋅7 × 106 Jones. These findings provide valuable insights on the photoresponse behavior of CBD deposited CdTe thin film in its as-deposited form.

Effect of Deposition Working Power on Physical Properties of RF-Sputtered CdTe Thin Films for Photovoltaic Applications.

The main objective of this study was to determine the variation in the properties of cadmium telluride (CdTe) thin films deposited on a p-type Si substrate by the radio frequency magnetron sputtering technique at four different working powers (70 W, 80 W, 90 W, and 100 W). The substrate temperature, working pressure, and deposition time during the deposition process were kept constant at 220 °C, 0.46 Pa, and 30 min, respectively. To study the structural, morphological, and optical properties of the CdTe films grown under the mentioned experimental conditions, X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and optical spectroscopy were used. For a better analysis of the films' structural and optical properties, a group of films were deposited onto optical glass substrates under similar deposition conditions. The electrical characterisation of Ag/CdTe/Al "sandwich" structures was also performed using current-voltage characteristics in the dark at different temperatures. The electrical measurements allowed the identification of charge transport mechanisms through the structure. New relevant information released by the present study points towards 90 W RF power as the optimum for obtaining a high crystallinity of ~1 μm nanostructured thin films deposited onto p-Si and optical glass substrates with optical and electrical properties that are suitable for use as absorber layers. The obtained high-quality CdTe nanostructured thin films are perfectly suitable for use as absorbers in CdTe thin-film photovoltaic cells.

Exploring the impact of defect energy levels in CdTe/Si dual-junction solar cells using wxAMPS

A numerical analysis of a CdTe/Si dual-junction solar cell in terms of defect density introduced at various defect energy levels in the absorber layer is provided. The impact of defect concentration is analyzed against the thickness of the CdTe layer, and variation of the top and bottom cell bandgaps is studied. The results show that CdTe thin film with defects density between 1014 and 1015 cm−3 is acceptable for the top cell of the designed dual-junction solar cell. The variations of the defect concentrations against the thickness of the CdTe layer indicate that the open circuit voltage, short circuit current density, and efficiency (ƞ) are more affected by the defect density at higher CdTe thickness. In contrast, the Fill factor is mainly affected by the defect density, regardless of the thin film’s thickness. An acceptable defect density of up to 1015 cm−3 at a CdTe thickness of 300 nm was obtained from this work. The bandgap variation shows optimal results for a CdTe with bandgaps ranging from 1.45 to 1.7 eV in tandem with a Si bandgap of about 1.1 eV. This study highlights the significance of tailoring defect density at different energy levels to realize viable CdTe/Si dual junction tandem solar cells. It also demonstrates how the impact of defect concentration changes with the thickness of the solar cell absorber layer.

Ultra-thin CdTe film properties enhancement via eco-friendly MgCl2-assisted thermal treatment

AbstractThe thermal treatment of the CdTe thin film in the presence of CdCl2 is a crucial step in the creation of high-efficiency CdTe-based solar cells. The process influences the grain growth, grain boundary passivation, and doping, including CdTe recrystallization, and promotes to building of the photovoltaic junction. However, toxic Cd2+ ions released by the CdCl2, which is highly soluble in water is a major environmental concern of this process. Also, the price of CdCl2 (about 30 cents/gram) that drives up manufacturing costs is another limitation of the current processs. Finding a non-toxic Cl molecule is therefore currently in high demand and key factor for the thermal treatment of CdTe. In this study, MgCl2 was thoroughly explored as an alternative, non-toxic, and somewhat less expensive chlorine-containing chemical for CdTe thermal treatment. CdTe thin films, approximately 1.0 µm thick, were deposited on a glass substrate at 350 ºC using RF magnetron sputtering, and after deposition, different concentrations of MgCl2 (0.2 M, 0.3 M, 0.4 M, and 0.5 M) mixed with 10% methanol were applied to the films for around 10 s, forming a thin MgCl2 coating, followed by the optimized heat treatment at 400 ºC in a nitrogen–oxygen environment. We found that the thermal treatment of CdTe films using MgCl2 showed improved crystallinity, surface morphology, impurity profiles, and carrier density similar to the conventional CdCl2 process. The sample treated with 0.4 M MgCl2 exhibited the best output as obtained the band gap of nearly 1.46 eV, a refractive index of 2.84, a carrier concentration of 9.81E+15 cm−3, and mobility 35.08 cm2/V-S with a moderate resistivity. Our findings show that MgCl2 could be utilized instead of traditional CdCl2 in the current fabrication procedure, which substantially lowers the environmental hazard with a cost-effective production process of CdTe-assembled solar cells.

Absorber texture and the efficiency of polycrystalline thin film CdTe solar cells

A range of microstructural changes occur during the deposition and activation of CdTe based thin film solar cells. In particular, the cadmium chloride (CdCl2) activation treatment results in wholesale recrystallisation which transforms the conversion efficiency of the solar cell. One of the noticeable effects is the change of preferred orientation of the CdTe absorber. Highly orientated [111] texture is observed in as deposited or under-treated CdTe based devices. Optimized activation results in a more randomized texture and the [111] preferred texture component is significantly weakened. In this paper we use Electron Backscatter Diffraction to characterise absorber cross-sections. The focus is on how randomization of the absorber texture reflects device performance. We have had access to a range of CdTe devices using a variety of deposition techniques. We have observed a clear pattern that shows that devices with a highly orientated [111] texture have poor efficiency. Devices with a randomized texture have much higher efficiency. Here we illustrate this empirical correlation using devices deposited by Metal Organic Chemical Vapour Deposition with a range of efficiencies from 13.1 % to 17 %. We have also included the analysis of an absorber from a 18.7 % high efficiency CdSeTe/CdTe device to show that texture is similarly important in these advanced devices. We have been able to quantify the effect of texture by using multiples of uniform density or (MUD) values from the inverse pole figures. MUD figures close to 1 correlate with highest efficiency. Although the random texture of the absorber microstructure is only one of several important process factors, it appears to be a necessary feature for highest efficiency CdTe-based polycrystalline solar cells.