Thin-film Optoelectronic Devices Research Articles

Solvent-Engineering-Assisted Ligand Exchange Strategy for High-Efficiency AgBiS2 Quantum Dot Solar Cells.

As the initial synthesized colloidal quantum dots (CQDs) are generally capped with insulating ligands, ligand exchange strategies are essential in the fabrication of CQD films for solar cells, which can regulate the surface chemical states of CQDs to make them more suitable for thin-film optoelectronic devices. However, uncontrollable surface adsorption of water molecules during the ligand exchange process introduces new defect sites, thereby impairing the resultant device performance, which attracts more efforts devoted to it but remains a puzzle. Here, we develop a solvent-engineering-assisted ligand exchange strategy to revamp the surface adsorption, improve the exchange efficiency, and modulate the surface chemistry for the environmentally friendly lead-free silver bismuth disulfide (AgBiS2) CQDs. The optimized AgBiS2 CQD solar cells deliver an outstanding champion power conversion efficiency (PCE) of up to 8.95 % and improved long-term stability. Our strategy is less environment-dependent and can produce solar cells with negligible performance variance for several batches across several months. Our work demonstrates the critical role of solvents for ligand exchange in the surface chemistry of CQDs and the realization of high-performance photovoltaic devices in a highly reproducible manner.

Characterization of degenerate Zn-doped CdO thin films for optoelectronic devices

Characterization of degenerate Zn-doped CdO thin films for optoelectronic devices

Scalable Fabrication of Black Phosphorous Films for Infrared Photodetector Arrays.

Bulk black phosphorous (bP) exhibits excellent infrared (IR) optoelectronic properties, but most reported bP IR photodetectors are fabricated from single exfoliated flakes with lateral sizes of <100µm. Here, scalable thin films of bP suitable for IR photodetector arrays are realized through a tailored solution-deposition method. The properties of the bP film and their protective capping layers are optimized to fabricate bP IR photoconductors exhibiting specific detectivities up to 4.0×108cm Hz1/2 W-1 with fast 30/60 µs rise/fall times under λ = 2.2µm illumination. The scalability of the bP thin film fabrication is demonstrated by fabricating a linear array of 25 bP photodetectors and obtaining 25×25pixel IR images at ≈203ppi with good spatial fidelity. This research demonstrates a commercially viable method of fabricating scalable bP thin films for optoelectronic devices including room temperature-operable IR photodetector arrays.

Solution-processed ZnO quantum dot thin films with low solvent residues and ultra-flat surfaces

ZnO quantum dots are considered a desirable material for the electron transport layer (ETL) in thin-film optoelectronic devices, determining their efficiency and stability. Solution-processed ZnO quantum dot films are fascinating due to the potential for low-cost manufacture of large-area devices and the compatibility with flexible substrates. However, eliminating solvent residues from solution-derived ZnO films remains a challenge, as their presence can significantly impact the efficiency and performance of the devices. Herein, we reported a straightforward and controllable strategy to overcome the above problem, aiming to achieve low solvent residues and ultra-flat ZnO films. Methanol, with its low boiling point and high relative evaporation rate, is utilized as a dispersing solvent for ZnO quantum dots, the resulting thin films exhibit low solvent residue, as confirmed by TGA and NMR analyses. Moreover, we achieved a stable monodisperse state of ZnO quantum dots in methanol solvent for three months by a simple temperature control method. The ZnO film prepared using a low-temperature spin-coating technique demonstrates extremely low surface roughness (RMS less than 1 nm).

MoS2-CdS composite for photocatalytic reduction of hexavalent chromium and thin film optoelectronic device applications

We introduce an enhanced light-harvesting MoS2-based nanocomposite exhibiting improved solar light induced photocurrent generation, both in solution and solid phases. The MoS2-CdS composite was synthesized via easy to achieve, cost effective, two-step solution process for the photocatalytic potassium dichromate [Cr(VI)] reduction and photocurrent generation in thin-film optoelectronic devices. Incorporating 10 wt% MoS2 into the composite increased the degradation efficiency of CdS from 43.9 to 91.9%. Furthermore, the MoS2-CdS composite demonstrated a 2.88-fold increase in the degradation rate constant and a 2.15% enhancement in the apparent quantum yield compared to controlled CdS. Additionally, the electrical power consumption per order decrease in Cr(VI) reduced from 25.74 kWh m−3 for controlled CdS to 9 kWh m−3 aimed at 10 wt% MoS2-CdS composite, indicating optimal synergy between the counterparts of MoS2-CdS in its composite. The resulting thin-film device with 10 wt% MoS2-CdS exhibited robust photocurrent generation and nonlinear I–V characteristics under solar illumination, attributed to the unique electronic properties of the MoS2-CdS heterojunction, influencing carrier transport via band alignment and interface carrier trapping effects. Moreover, photocurrent generation increased linearly with illumination intensity, and dynamic photo response studies revealed rapid photocurrent generation under illumination. Furthermore, the optoelectronic key parameters of CdS, including photosensitivity, photoresponsivity, and detectivity, were enhanced by factors of 5.09, 3.33, and 12.3, respectively, upon composite formation with MoS2. This study offers novel insights into developing high-performance and cost-effective bimetallic sulfide photocatalysts for efficient solar light-induced photocurrent generation in both solution and solid phases.

Interfacial Heterojunction Enables High Efficient PbS Quantum Dot Solar Cells.

Colloidal quantum dots (CQDs) are promising optoelectronic materials for solution-processed thin film optoelectronic devices. However, the large surface area with abundant surface defects of CQDs and trap-assisted non-radiative recombination losses at the interface between CQDs and charge-transport layer limit their optoelectronic performance. To address this issue, an interface heterojunction strategy is proposed to protect the CQDs interface by incorporating a thin layer of polyethyleneimine (PEIE) to suppress trap-assisted non-radiative recombination losses. This thin layer not only acts as a protective barrier but also modulates carrier recombination and extraction dynamics by forming heterojunctions at the buried interface between CQDs and charge-transport layer, thereby enhancing the interface charge extraction efficiency. This enhancement is demonstrated by the shortened lifetime of carrier extraction from 0.72 to 0.46ps. As a result, the resultant PbS CQD solar cells achieve a power-conversion-efficiency (PCE) of 13.4% compared to 12.2% without the heterojunction.

Effect of traps on carrier transport in CdSe quantum dot thin films

The influence of trap effects on carrier transport characteristics in quantum dot (QD) thin films is the subject of study, aiming to provide a theoretical basis for the structural design and performance improvement of QD thin film optoelectronic devices. This study presents a specific mathematical description of capturing and releasing charges by traps, which includes the time-varying equation for captured charges. Utilizing the carrier hopping transport model, a system of partial differential equations is employed as the physical field, establishing hopping transport models that account for both shallow traps and a combination of shallow and deep traps. Simulations based on specific experimental samples reveal that the presence of traps introduces asymmetry in the diffusion motion of charge carriers, extending the duration of the photocurrent signal and resulting in the capture of charges, along with a reduction in the peak value of the current signal. The model also simulates carrier transport characteristics under the influence of repetitive light pulses, demonstrating distinct patterns in capturing and releasing charges for both shallow and deep traps.

Microstructural evolution during densification process of neodymium-doped indium zinc oxide ceramic targets and application for high mobility films

Oxide targets are crucial materials for transparent conducting oxide (TCO) thin films used in optoelectronic devices. In this study, neodymium-doped indium zinc oxide (NdIZO) ceramic targets were prepared using an advanced pressureless oxygen atmosphere sintering process. By optimizing the experimental conditions, the best sintering parameters were obtained, resulting in dense, fine-grained, and uniformly microstructured NdIZO targets. The influence mechanism of different Nd doping concentrations on the phase composition, microstructure evolution, and electrical properties of the targets during the process of oxide composite powder, green body shaping, and sintering densification was analyzed in detail. The results showed that the pretreatment of the composite powder improved its dispersibility, and sintering activity. The NdIZO-2 target with an atomic ratio of Nd:In:Zn = 0.02:1:1, fabricated under optimal conditions, exhibited high density of 99.8 %, low resistivity of 5.2 mΩ cm, and an average grain size of about 3.9 μm, thereby demonstrating the best comprehensive performance. Moreover, the sputtered films prepared using NdIZO-2 targets also showed excellent properties with transmittance (T) of 88.1 %, electron mobility (μe) of 31.5 cm2/Vs, and resistivity (ρ) of 7.5 × 10−3 Ω cm. This work provides theoretical support for the preparation of high-quality indium zinc oxide (IZO) ceramic targets and their application in high-performance optoelectronic thin film devices.

Film-Depth-Dependent Charge Mobilities in Organic Semiconductor Films

Carrier mobility is a crucial parameter characterizing the performance of organic semiconductors in thin film optoelectronic devices. The organic semiconductor film is usually not uniform along the film-perpendicular direction. This non-uniformity affects the carrier mobility at various depths within the film, thereby influencing device performance. Conventional methods for measuring mobility are basically not available to determine film-depth-dependent charge density or mobility. In this study, an easily accessed approach was proposed to investigate the film-depth-dependent electronic properties. Soft plasma etching was introduced to achieve incremental etching of the film, without causing damage to the underlying sublayers. For doped films with intrinsic charge, film-depth-dependent charge density, and film-depth-dependent mobility were extracted from the transfer characteristics evolution during the etching. For materials without intrinsic charge, film-depth-dependences of mobility could also be estimated under light illumination. The proposed method achieves a film-depth resolution of approximately 10 nm. It is revealed that for some model conjugated polymers, the mobility at the top surface is one order higher than that at the buried region of the transistor. This feature leads to unfavorable field-effect mobility. This work provides insights into the film-depth-dependent electronic properties and a strategy to optimize the electronic device performance.

Synthesis of Regioregular and Random Boron-Fused Azomethine Conjugated Polymers for Film Morphology Control.

Regioregular and random conjugated polymers based on a boron-fused azomethine unit were synthesized by Sonogashira-Hagihara cross coupling reaction. Although these polymers exhibited similar optical properties in the solution states, a distinct difference was observed in the aggregation forming ability in the film states; scanning electron microscope (SEM) observation indicated the existence of fiber-like aggregates in the spin-coated film of the regioregular polymer, while regiorandom polymer showed no aggregate in the film state. Accordingly, the UV-vis absorption spectrum of the regioregular polymer showed an increased shoulder peak due to the aggregate formation, whereas the random one showed no change. Furthermore, an absolute fluorescence quantum efficiency of the regioregular polymer was enhanced in response to the aggregate disassembly via thermal annealing treatment. In this study, we demonstrate that controlling regioregularity of the conjugated polymers can induce the different morphological structures and thermal-responsive behaviors. These findings could be beneficial for the design strategy and potential applications of thin-film optoelectronic devices with stimuli-responsive properties.

Improving photoluminescence properties and reducing recombination of CsPbBr3 perovskite through lithium doping.

This study investigates the impact of lithium doping on the structural and photophysical properties of spin-coated CsPbBr3 perovskite thin films. The deposited films display a pristine structure, preferentially growing along the (220) direction, and exhibit high-quality green photoluminescence at around 530 nm. The doping leads to an improvement in the optical properties of the films, as evidenced by a stronger photoluminescence (PL) intensity compared to undoped CsPbBr3, particularly at temperatures below 200 K. The increase in PL intensity suggests a decrease in defects and surface passivation. Additionally, the decrease in the power-law exponent β from 1.6 to 1.0 indicates a reduction in non-radiative recombination, likely due to trap states filling with free electrons induced by the doping. Overall, doping with lithium reduces non-radiative recombination, fills trap states, and reduces band tail/activation energy, leading to improved optoelectronic properties of the films. This investigation provides insights into the photophysical properties of the Li-CsPbBr3 absorber layer and the recombination mechanism, and helps to unravel new methods for the development of high-stability, high-performance perovskite thin-film solar cells and optoelectronic devices.

Optical Properties of PS-MgO Thin Films

In this study, optical properties of thin films made of different volume ratios of polysulfone (PS) and magnesium oxide (MgO) thin film deposited on germania (GeO2 ) were studied as a function of wavelength in the range 0.3 – 1.1 μm using Matlab. Refractive indices, extinction coefficients, and absorption coefficients were investigated. The transmittance spectra of the PS-MgO thin films of different thicknesses deposited on the GeO2 substrate were also examined. The films were found to show an increase in transmittance with an increase in the MgO percentage the thin film. However, the absorbance of the film was found to be high in the ultraviolet. The results give good reason for the applications of MgO thin films in optoelectronic devices.

Luminescence of In(III)Cl-etioporphyrin-I.

The luminescent and photophysical properties of the etioporphyrin-I complex with indium(III) chloride, InCl-EtioP-I were experimentally studied at room and liquid nitrogen temperatures in pure and mixed toluene solutions. At 77 K, in a 1:2 mixture of toluene with diethyl ether, the quantum yield of phosphorescence reaches 10.2%, while the duration of phosphorescence is 17 ms. At these conditions, the ratio of phosphorescence-to-fluorescence integral intensities is equal to 26.1, which is the highest for complexes of this type. At 298 K, the quantum yield of the singlet oxygen generation is maximal in pure toluene (81%). Quantum-chemical calculations of absorption and fluorescence spectra at temperatures of 77 K and 298 K qualitatively coincide with the experimental data. The InCl-EtioP-I compound will further be used as a photoresponsive material in thin-film optoelectronic devices.

Two-dimensional tellurium-based diodes for RF applications

The research of two-dimensional (2D) Tellurium (Te) or tellurene is thriving to address current challenges in emerging thin-film electronic and optoelectronic devices. However, the study of 2D-Te-based devices for high-frequency applications is still lacking in the literature. This work presents a comprehensive study of two types of radio frequency (RF) diodes based on 2D-Te flakes and exploits their distinct properties in two RF applications. First, a metal-insulator-semiconductor (MIS) structure is employed as a nonlinear device in a passive RF mixer, where the achieved conversion loss at 2.5 GHz and 5 GHz is as low as 24 dB and 29 dB, respectively. Then, a metal-semiconductor (MS) diode is tested as a zero-bias millimeter-wave power detector and reaches an outstanding linear-in-dB dynamic range over 40 dB, while having voltage responsivities as high as 257 V ⋅ W−1 at 1 GHz (up to 1 V detected output voltage) and 47 V ⋅ W−1 at 2.5 GHz (up to 0.26 V detected output voltage). These results show superior performance compared to other 2D material-based devices in a much more mature technological phase. Thus, the authors believe that this work demonstrates the potential of 2D-Te as a promising material for devices in emerging high-frequency electronics.

Two-Dimensional Van Der Waals Thin Film and Device.

In the rapidly evolving field of thin-film electronics, the emergence of large-area flexible and wearable devices has been a significant milestone. Although organic semiconductor thin films, which can be manufactured through solution processing, have been identified, their utility is often undermined by their poor stability and low carrier mobility under ambient conditions. However, inorganic nanomaterials can be solution-processed and demonstrate outstanding intrinsic properties and structural stability. In particular, a series of two-dimensional (2D) nanosheet/nanoparticle materials have been shown to form stable colloids in their respective solvents. However, the integration of these 2D nanomaterials into continuous large-area thin with precise control of layer thickness and lattice orientation still remains a significant challenge. This review paper undertakes a detailed analysis of van der Waals thin films, derived from 2D materials, in the advancement of thin-film electronics and optoelectronic devices. The superior intrinsic properties and structural stability of inorganic nanomaterials are highlighted, which can be solution-processed and underscor the importance of solution-based processing, establishing it as a cornerstone strategy for scalable electronic and optoelectronic applications. A comprehensive exploration of the challenges and opportunities associated with the utilization of 2D materials for the next generation of thin-film electronics and optoelectronic devices is presented.

Graphene Oxide: Key to Efficient Charge Extraction and Suppression of Polaronic Transport in Hybrids with Poly (3-hexylthiophene) Nanoparticles.

Nanoparticles (NPs) of conjugated polymers in intimate contact with sheets of graphene oxide (GO) constitute a promising class of water-dispersible nanohybrid materials of increased interest for the design of sustainable and improved optoelectronic thin-film devices, revealing properties exclusively pre-established upon their liquid-phase synthesis. In this context, we report for the first time the preparation of a P3HTNPs-GO nanohybrid employing a miniemulsion synthesis approach, whereby GO sheets dispersed in the aqueous phase serve as a surfactant. We show that this process uniquely favors a quinoid-like conformation of the P3HT chains of the resulting NPs well located onto individual GO sheets. The accompanied change in the electronic behavior of these P3HTNPs, consistently confirmed by the photoluminescence and Raman response of the hybrid in the liquid and solid states, respectively, as well as by the properties of the surface potential of isolated individual P3HTNPs-GO nano-objects, facilitates unprecedented charge transfer interactions between the two constituents. While the electrochemical performance of nanohybrid films is featured by fast charge transfer processes, compared to those taking place in pure P3HTNPs films, the loss of electrochromic effects in P3HTNPs-GO films additionally indicates the unusual suppression of polaronic charge transport processes typically encountered in P3HT. Thus, the established interface interactions in the P3HTNPs-GO hybrid enable a direct and highly efficient charge extraction channel via GO sheets. These findings are of relevance for the sustainable design of novel high-performance optoelectronic device structures based on water-dispersible conjugated polymer nanoparticles.

Preparation of a CeO2 ball-core structure and its application in quantum dot sensitized solar cells.

A pomegranate-like nanosphere structure of CeO2 was prepared by a simple one-step hydrothermal method, and the novel CeO2 structure was printed on a TiO2 film to form a scattering layer, which constituted the composite structure of a photoanode in a thin film optoelectronic device. Then ZnCuInSe quantum dots, a ZnS passivation layer and a CuS counter electrode were prepared, and these parts were assembled into quantum dot-sensitized solar cells. By changing the thickness of the scattering layer film in the photoanode, the quantum dots were adsorbed on TiO2 more effectively. By using the special ball-core structure, light was scattered so that the photoanode used the light many times, which effectively increased the efficiency of photoelectron production. After electrochemical testing of the device, it was found that the photoconversion efficiencies of the TiO2 transparent layer and the CeO2 scattering layer composite photoanode were greater than that of a single TiO2 photoanode without a scattering layer. The results showed that when the thickness of the scattered layer was 10 ± 1 μm, the highest photoelectric conversion efficiency (PCE) was obtained, which was 20% higher than that seen with TiO2 alone.

Wavelength dependence of nonlinear optical susceptibility of ZnSe nanocrystalline film

The present work reports the nonlinear optical susceptibility of nanocrystalline ZnSe thin films with different thicknesses, measured using third-order harmonic technology at irradiation wavelengths λ of 1200–1900 nm. The results show that the third-order nonlinear susceptibility χ(3) of ZnSe thin films is a function of the pump wavelength and film thickness. The χ(3) values for the thinner 202-nm film generally decreased with the redshift of the wavelength and were approximately 10−20 m2/V2 at λ ≤ 1500 nm and 10−21 m2/V2 at λ > 1500 nm. The χ(3) values for the thicker 1021-nm film did not follow a decreasing trend, but instead exhibited local peaks at 1350, 1500 and 1750 nm, with a maximum value of approximately 2.4 × 10−19 m2/V2 at λ = 1750 nm. Within 1200–1900 nm, the χ(3) of the thicker film was always greater than that of the thinner film. In addition, a weak second-order harmonic at wavelengths within 1100–1300 nm was observed for the 1021 nm ZnSe thin film. The large difference in the nonlinear optical properties between the thinner and thicker film samples is conjectured to be caused by the increased density of geometric defects and the gradual formation of local anisotropy with increasing film thickness. Nonlinear optical coefficient measurements of ZnSe thin films with different thicknesses over a broad spectrum are important for the application of these films in nonlinear thin-film optoelectronic devices.

Simple thermal vapor deposition process for and characterization of n-type indium oxysulfide thin films

The search continues for alternative nontoxic n-type electron transport layers in optoelectronic thin-film devices. Indium oxysulfide, In2(O,S)3, represents one promising material for this application, especially when paired with chalcogenide absorber layers. The ternary nature of the composition allows for electrical conductivity and optical bandgap tuning by tailoring the sulfur to oxygen ratio in the oxysulfide alloy. However, thin films of In2(O,S)3 are typically deposited only by chemical bath deposition or plasma-enhanced atomic layer deposition. We report deposition of thin films of In2(O,S)3 in a custom-built thermal reactor using only water vapor and hydrogen sulfide as the coreactants. This advance is enabled by the use of a recently reported, highly reactive indium formamidinate precursor. As shown by x-ray photoelectron spectroscopy, the composition can be tuned from pure In2O3 to pure In2S3 by varying the ratio of cycles employing water or hydrogen sulfide. The oxygen to the sulfur ratio in the film can be controlled by altering the dose sequence, although films typically contain more sulfur than would be expected naively from the percentage of hydrogen sulfide doses in the deposition recipe. Rutherford backscattering spectrometry confirms the composition is sulfur-rich relative to the dosing ratio. Structural characterization indicates films are relatively amorphous in nature. Electrically, these films offer reasonably constant electron mobility at different O:S ratios, with an electron concentration tunable over 4 orders of magnitude. These oxysulfide films possess a higher indirect bandgap than their oxygen-free indium sulfide counterparts, indicating higher transmittance to blue light. These indium oxysulfide films may be suitable candidates for electron transport layers in thin-film solar cells where their wider bandgap might result in higher optical transparency and thus short circuit current density, while the tunability of their conduction band offset with an absorber layer may result in higher open circuit voltage.

Hydrophenazine-linked two-dimensional ladder-type crystalline fused aromatic network with high charge transport

•A ladder-type hydrophenazine-linked 2D fused aromatic network (HP-FAN) was realized •The HP-FAN has an inherent semiconducting band gap along with a parallel flat band •The HP-FAN has high intrinsic electrical conductivity without doping •The HP-FAN exhibits a remarkable performance in electronic devices with high mobility Since the advent of graphene, the development of crystalline two-dimensional (2D) organic materials with semiconducting features has been extensively explored for their potential optoelectronic applications. Despite extensive progress in this field, it is still challenging to realize laterally extended organic materials with high electrical transport properties. Here, we report a 2D ladder-type fused aromatic network (FAN) in which backbones are composed of hydrophenazine (HP) linkage (designated HP-FAN). Consequently, its 2D extended delocalization of π-molecular orbitals imparts a semiconducting band gap and facilitates fast intra-chain charge transport. The as-prepared HP-FAN exhibits semiconducting features with calculated and experimental band gaps of approximately 1.44 and 1.54 eV, respectively, with an unusual flat band. The HP-FAN thin flakes, isolated by polydimethylsiloxane stamping, exhibit remarkable performance in a p-type field-effect transistor (FET) and a Hall effect device. Given its laterally extended ladder-type π-conjugated structure, the HP-FAN has extensive potential for applications in thin-film optoelectronic devices. Since the advent of graphene, the development of crystalline two-dimensional (2D) organic materials with semiconducting features has been extensively explored for their potential optoelectronic applications. Despite extensive progress in this field, it is still challenging to realize laterally extended organic materials with high electrical transport properties. Here, we report a 2D ladder-type fused aromatic network (FAN) in which backbones are composed of hydrophenazine (HP) linkage (designated HP-FAN). Consequently, its 2D extended delocalization of π-molecular orbitals imparts a semiconducting band gap and facilitates fast intra-chain charge transport. The as-prepared HP-FAN exhibits semiconducting features with calculated and experimental band gaps of approximately 1.44 and 1.54 eV, respectively, with an unusual flat band. The HP-FAN thin flakes, isolated by polydimethylsiloxane stamping, exhibit remarkable performance in a p-type field-effect transistor (FET) and a Hall effect device. Given its laterally extended ladder-type π-conjugated structure, the HP-FAN has extensive potential for applications in thin-film optoelectronic devices.