Crystallization Of Thin Films Research Articles

Preparation and Characterization of Nanostructured ITO Thin Films by Spray Pyrolysis Technique: Dependence on Annealing Temperature

Transparent conducting oxides (TCOs) like Indium tin oxide (ITO) have wide attention from all scientists which have low resistance and high visible light transmittance, used as transparent electrodes in many optoelectronic devices such as liquid crystal displays, touch screens, light emitting diodes, and solar cells. In this research, the relationship between the crystallization, optical transmittance, and surface roughness of nanostructured ITO thin films and the change in annealing temperature was investigated. To enhance the efficiency of this material in optoelectronic applications, both the optical transmittance in the visible region and the crystallite size must be increased. These results can be obtained by the heat treatment of the films. Nanostructured ITO thin layer films have been successfully prepared at a substrate temperature equal to (350)℃ by chemical spray pyrolysis (CSP) technique. The physical characterizations of nanostructured ITO thin layer films were investigated at different annealing temperatures (400,450 and 500)℃. The presence of diffraction peaks indicates that the as-deposited and post annealed films are polycrystalline cubic structure and the peak (400) is a preferred growth orientation. For all samples the value of intensity of diffraction peaks increases with increasing substrate temperature. The crystallite size of nanostructured ITO thin films is strongly related to the annealing temperature. The crystallite size estimated from XRD was found to rise with rising annealing temperature. The surface roughness of nanostructured ITO thin layer films increases with rising annealing temperature. High values of transmittance have been measured in the visible region 550 nm equal to (70, 82, 84 and 88)% corresponding to annealing temperature (350,400,450 and 500)℃ respectively.

Mechanochromic 3D Soft Photonic Crystals Enabled Anticounterfeiting and Encryption Information Storage

AbstractInspired by the color‐changing abilities of natural organisms, this research focuses on the design and fabrication of mechanochromic liquid crystal photonic crystal thin films with periodic self‐assembly structures. Benefiting from its unique 3D self‐assembled structure with a body‐centered cubic lattice, BP I film exhibits excellent mechanical properties, characterized by superior elasticity and toughness due to the presence of rigid and flexible microdomains and suitable dislocation line volumes. As the strain increases, the structural color of the BP I film demonstrates a repeatable and rapid shift from red to blue, covering the entire visible light spectrum with high reflectivity. The incorporation of fluorescent molecules further enhances the mechanical properties and endowing the film with circularly polarized luminescence under UV light irradiation. Utilizing different fluorescent dyes as inks, arbitrary patterned writing can be performed on the BPI film, enabling specific information hiding and encryption. The prepared label exhibits excellent environmental stability, presenting promising applications in information storage, anti‐counterfeiting, and flexible 3D displays. The study may contribute to a deeper understanding of the relationship between microstructure, mechanical deformation, and optical properties, potentially advancing the development of innovative responsive materials and multifunctional devices.

Infrequent trigonal crystal system CoNb thin films: investigation of growth behavior, microstructure and magnetic properties

Magnetic films with excellent initial permeability, high resonance frequency, suitable anisotropy fields, and well compatibility are highly desirable for on-chip inductors and transformers. Here, Co90Nb10 thin films with different thicknesses are grown on Si substrates of different orientations using an electron beam evaporation technique. A rare trigonal crystal structure of the CoNb films was observed and was virtually unaffected by substrate orientation. Films grown exhibit thickness-dependent magnetic behavior: coercivity initially decreases and then increases, while the in-plane anisotropy field progressively diminishes. Meanwhile, the initial permeability increases initially before decreasing, and the resonance frequency continuously decreases as the thickness increases. The resultant Co90Nb10/Si (111)-50 nm film displays a high μi of 496 and a great fr of 2.1GHz. The improved magnetic performance originates from the smaller crystallite size, smoother surface roughness, and suitable in-plane anisotropy field. Moreover, the in-plane anisotropy transition to the out-of-plane anisotropy in the Co90Nb10 films whose thickness exceeds 70nm, which is attributed to the growth of the coarse columnar grains once the critical thickness is exceeded. This study demonstrates the correlation between the growth behavior, microstructure, and magnetic properties of CoNb thin films, presenting a new potential for utilizing Co-based thin films in high-frequency applications.

Constraining the Excessive Aggregation of Non-Fullerene Acceptor Molecules Enables Organic Solar Modules with the Efficiency >16.

Translating high-performance organic solar cell (OSC) materials from spin-coating to scalable processing is imperative for advancing organic photovoltaics. For bridging the gap between laboratory research and industrialization, it is essential to understand the structural formation dynamics within the photoactive layer during printing processes. In this study, two typical printing-compatible solvents in the doctor-blading process are employed to explore the intricate mechanisms governing the thin-film formation in the state-of-the-art photovoltaic system PM6:L8-BO. Our findings highlight the synergistic influence of both the donor polymer PM6 and the solvent with a high boiling point on the structural dynamics of L8-BO within the photoactive layer, significantly influencing its morphological properties. The optimized processing strategy effectively suppresses the excessive aggregation of L8-BO during the slow drying process in doctor-blading, enhancing thin-film crystallization with preferential molecular orientation. These improvements facilitate more efficient charge transport, suppress thin-film defects and charge recombination, and finally enhance the upscaling potential. Consequently, the optimized PM6:L8-BO OSCs demonstrate power conversion efficiencies of 18.42% in small-area devices (0.064 cm2) and 16.02% in modules (11.70 cm2), respectively. Overall, this research provides valuable insights into the interplay among thin-film formation kinetics, structure dynamics, and device performance in scalable processing.

Tailoring Crystallization Kinetics in Thin Sucrose Films during Convective Drying: Impact of Temperature and Humidity on Onset, Growth, and Nucleation Rate.

Drying experiments with varying air temperature and humidity were conducted to investigate the influence of the drying process on the crystallization of thin sucrose films. For the first time, the effects of the nucleation onset, nucleation rate, and growth rate were investigated in situ and their differentiated influence on product crystallinity could be assessed. The growth rate was not influenced by air humidity but showed a strong dependence on temperature. It increased with drying temperature; however, at high temperatures, growth was inhibited when the water content falls below a critical level. Noticeable differences in nucleation behavior could be observed with regard to air humidity. Dry air led to crystallization onsets at lower levels of supersaturation, while moderately humid air retarded it. At higher temperatures, nucleation onset commenced at lower water contents but at a constant supersaturation level. The nucleation rate doubled in experiments with moderately humid air (15% RH), while an elevated drying temperature showed generally lower nucleation rates. The observed differences in the nucleation onset and rate could be explained by the film-internal concentration profile, which is strongly influenced by drying parameters. The insights therefore provide a differentiated understanding of the formation of the physical state and how it can be influenced during convective drying.

Enhancing the Performance of Nanocrystalline SnO2 for Solar Cells through Photonic Curing Using Impedance Spectroscopy Analysis.

Wide-bandgap tin oxide (SnO2) thin-films are frequently used as an electron-transporting layers in perovskite solar cells due to their superior thermal and environmental stabilities. However, its crystallization by conventional thermal methods typically requires high temperatures and long periods of time. These post-processing conditions severely limit the choice of substrates and reduce the large-scale manufacturing capabilities. This work describes the intense-pulsed-light-induced crystallization of SnO2 thin-films using only 500 μs of exposure time. The thin-films' properties are investigated using both impedance spectroscopy and photoconductivity characteristic measurements. A Nyquist plot analysis establishes that the process parameters have a significant impact on the electronic and ionic behaviors of the SnO2 films. Most importantly, we demonstrate that light-induced crystallization yields improved topography and excellent electrical properties through enhanced charge transfer, improved interfacial morphology, and better ohmic contact compared to thermally annealed (TA) SnO2 films.

Enhancing Thermal Stability of Perovskite Solar Cells through Thermal Transition and Thin Film Crystallization Engineering of Polymeric Hole Transport Layers.

Organic hole transport layers (HTLs) have been known to be susceptible to thermal stress, leading to poor long-term stability in perovskite solar cells (PSCs). We synthesized three 2,5-dialkoxy-substituted, 1,4-bis(2-thienyl)phenylene (TPT)-based conjugated polymers (CPs) linked with thiophene-based (thiophene (T) and thienothiophene (TT)) comonomers and evaluated them as HTLs in n-i-p PSCs. TPT-T (MB/C6), which has branched 2-methylbutyl and linear hexyl (MB/C6) side chains, emerged as a promising HTL candidate, enabling power conversion efficiencies (PCEs) greater than 15%. In addition, PSCs with this HTL showed an improvement in long-term stability at elevated temperatures of 65 °C when compared to those with the state-of-art HTL, 2,2',7,7'-tetrakis(N,N-p-dimethoxyphenylamino)-9,9'-spirobifluorene (spiro-OMeTAD). This improvement is ascribed to the lack of thermal transitions within the operational temperature range of PSCs for TPT-T (MB/C6), which is attributed to the relatively short branched side chains of this polymer. We propose that the elimination of thermal transitions below 200 °C leads to HTLs without cracking as-deposited and after conducting a stress test at 65 °C, which can serve as a new design guideline for HTL development.

Au-induced crystallization of amorphous Ge thin films: An indication of the existence of a recrystallization process during growth at deep subeutectic temperature

The influence of Au catalyst microstructure on the crystallization behavior of Ge thin films obtained by Au-induced crystallization method is studied. By improving the Au catalyst crystallinity by pre-annealing, the hole mobility of Ge thin film crystallized at 200°C is improved to nearly 150 cm2/Vs thanks to the increase in Ge grain size, which is fairly high for a Ge film as thin as 10 nm. It is found that the increase in Ge grain size originates from the recrystallization process at deep subeutectic temperature. This is attributed to the existence of a metastable AuGe alloy phase surrounding crystalline Ge, which is kinetically stabilized by a continuous flow of Ge atoms through the alloy phase and realizes a solution-like growth. The process using a kinetically stabilized metastable phase will open up the possibility to realize a novel cost-effective and low-temperature process to fabricate high-performance semiconductor devices on plastic substrates.

Heat transport in SiCOH thin films: an experimental and molecular dynamics study

Carbon-doped silicon dioxide (SiCOH) film is currently regarded as one of the most promising low-k materials in the integrated circuits (ICs) industry for advanced technology nodes. However, there have been limited studies on the thermal properties of SiCOH compared to its electrical and mechanical properties. In this study, we investigate the thermal conductivity of SiCOH thin films through molecular dynamics simulations (MD) and experimental characterizations. Our findings indicate that the size effect on thermal conductivity at 300 K is negligible when the thickness of SiCOH film is less than 20 nm. Additionally, we observe a contrasting temperature dependence law for the thermal conductivity of SiCOH thin films compared to crystal SiO2 thin films. Furthermore, we demonstrate a significant decrease in thermal conductivity with increasing porosity in SiCOH films; specifically, an increase in porosity from 5.35% to 42.77% results in a 60% reduction in thermal conductivity. Moreover, we validate our simulation results by characterizing the thermal conductivity of SiCOH using 3 ω method.

Efficient High-Order Harmonic Generation from the van der Waals Layered Crystal Copper Indium Thiophosphate.

Layered metal thio- and selenophosphates (MTPs) are a family of van der Waals gapped materials that exhibit a multitude of functionalities in terms of magnetic, ferroelectric, and optical properties. Despite the recent progress in terms of understanding the material properties of these compounds, the potential of MTPs as a material class yet needs further scrutiny, especially in terms of nonlinear optical properties. Recent reports of efficient low-order harmonic generation and extremely high third-order nonlinear optical properties in MTPs suggest the potential application of these materials in integrated nanophotonics. In this article, we investigate the high-order nonlinear response of bulk and exfoliated thin-film crystals of copper indium thiophosphate (CIPS) to intense mid-infrared fields through experimental and computational studies of high-order harmonic generation (HHG). From a driving laser source with a 3.2 μm wavelength, we generate odd and even harmonics up to the 10th order, exceeding the bandgap of the material. We note conversion efficiencies as high as 10-7 measured for the fifth and seventh harmonics and observe that the harmonic intensities follow a power law scaling with the driving laser intensity, suggesting a perturbative nonlinear optical origin of the observed harmonics for both bulk and thin flakes. Furthermore, first-principles calculations suggest that the generation of the highest harmonic orders results from electron-electron interactions, suggesting a correlation-mediated enhancement of the high-order optical nonlinearity.

Recent Advances in Perovskite Single-Crystal Thin Film Optoelectronic Devices.

Among novel semiconductors, perovskites have gained significant attention due to their versatility, combining tunable optoelectronic properties with relatively easy fabrication processes. However, certain issues still hinder their widespread use, often related to the presence of defects and traps within the material. Beyond defect passivation in polycrystalline thin films, an alternative approach to enhancing material quality lies in the fabrication of single crystals. This review aims to provide an overview of the promising approaches explored to address specific challenges of perovskites that benefit from the single crystal nature, restricting our analysis to perovskite single crystal thin films (PSC-TF). We will discuss novel fabrication techniques and highlight recent achievements in devices, such as photodetectors, solar cells, and transistors. By examining the fundamental properties already discovered and showcasing the latest advancements, we aim to provide an overview of the perspectives and open challenges for PSC-TF in next-generation optoelectronic devices.

Tuning Van Der Waals Heterostructure of WS2/SrTiO3 Via in Situ Transmission Electron Microscopy

Monolayer two-dimensional (2D) materials have been widely researched and discussed in recent years, while multi-layers have received comparatively less attention. Nowadays, combining different materials to create heterostructures has become mainstream. In semiconductor industry, heterostructure can form devices such as lasers, light-emitting diodes, fast transistors and so on. Heterostructures can create well electronic properties by combining two different materials together. Therefore, heterostructures become a great tool to manipulate the electronic structures. In traditional heterostructures, the interfaces between two different materials are formed by covalent bonds, hence it requires similar lattice constants and structures. On the other hand, novel van der Waal heterostructures (vdW-heterostructure), formed by 2D materials, do not require the same strict similarity as traditional ones. VdW-heterostructures, which create 3D structures through van der Waals forces, provide a new perspective. In this study, we created a vdW-heterostructures by stacking tungsten disulfide (WS2) with single-crystal strontium titanate, SrTiO3 (STO), shown in Figure 1a,b. The crystalline atomic-layer WS2 and STO were synthesized by chemical vapor deposition (CVD) and pulsed laser deposition (PLD), respectively. They are analyzed by high-resolution transmission electron microscope (HRTEM) shown in Figure 1c-h. Once the vdW-heterostructures are formed, we conducted in situ heating by TEM. Through the advanced in situ technique, we observed the change of the twisted stacking angle by heating the vdW-heterostructure. Ultimately, the lattices will shift and rotate, minimizing the free energy, so that the vdW-heterostructure will be aligned and formed epitaxially. In addition, we utilized atomic resolution scanning transmission electron microscope (STEM) to identify the stacking images and the moiré pattern of the vdW-heterostructure. During the rotation, we can observed different moiré patterns by various twisted stacking angles. These different moiré patterns can produce different electrical properties, which can be applied to advanced semiconductor devices. Keywords: high-resolution TEM/STEM, in situ heating, 2D materials, van der Waal heterostructures, moiré pattern Figure 1. The vdW-heterostructure of STO/WS2. a) The diagram showing that the formation process of WS2/STO vdW-heterostructures which have different twisted stacking angles. b) The low-magnification SEM image showing that the single crystal STO thin film is transferred onto the TEM heating chips. The circles in the middle are the observation windows for transmission electrons. c-e) HRTEM images. f-g) Diffraction patterns of HRTEM. c,f) Single crystal STO thin film with d-spacing (1−10) = 0.284 nm. d,g) Monolayer single crystal WS2 with d-spacing (−110) = 0.274 nm. e,h) WS2(red)/STO(yellow) vdW-heterostructure with stacking angle 3.6°. Figure 1

(Invited) Modification of Dielectric Properties of Film Dielectric Materials by Solid Solution System

Compound semiconductor based power devices such as SiC and GaN require high temperature operating passive devices such as a capacitor. SiC-based active devices can operate above 250 °C. The development of high-temperature operational passives is urgently needed to advance to the module and system level. In the case of capacitors, currently available capacitors can only operate efficiently up to 175 °C. Therefore, a thin film capacitor that can operate at high temperatures and be monolithically integrated near the active device should be developed. In this talk, I will present our achievements in the development of high-temperature operating dielectric film materials using the solid solution system. One topic is A2B2O7 pyrochlore ferroelectrics. The ferroelectric materials with the pyrochlore structure such as Sr2Nb2O7 exhibited the high dielectric constant above 100 at high and low temperature ranges. However, due to the crystallographic direction dependence of the Curie-Weiss temperature, the temperature stability of the dielectric constant from room temperature to 300 °C was not available. In order to obtain the high temperature stability of dielectric constant from room temperature to 300 °C with high dielectric constant over 100, the pyrochlore ferroelectric solid solution thin films were investigated by employing the combinatorial synthesis. Composition spread thin films of solid solution of two or three kinds of materials were deposited on substrates by physical vapor deposition technique, which provided the systematic physical properties. High-throughput combinatorial synthesis method is effective in the rapid optimization of the correlation between the crystallization and the dielectric property change behavior. For the composition spread solid solution film, the Sr- or La-containing A2B2O7 pyrochlore ferroelectrics were selected from the viewpoints of ion radios and crystallographic direction dependence of the Curie-Weiss temperature. The composition spread films were formed on a Pt/Ti/SiO2/Si substrate by combinatorial RF sputtering with stoichiometric composition targets. The X-ray fluorescence spectrum of the composition-spread film showed a linear variation of the metal composition. After deposition, the samples were annealed at different temperatures under oxygen atmosphere to reduce oxygen vacancies and improve crystallinity. The crystallization of the composition-spread solid solution thin film was confirmed by X-ray diffraction patterns, indicating the composition dependence of the crystallographic orientation. Some compositions showed high dielectric constant over 100 and high temperature stability from room temperature to 300 °C. In the presentation, the correlation between film composition, orientation and dielectric constant will be discussed in detail. In the presentation, we also introduce our achievement of the BaTiO3 based relaxor ferroelectrics and other dielectric materials development using the solid solution system. For the relaxor ferroelectrics, among the BaTiO3 based relaxor ferroelectrics, we have selected x[BaTiO3]-(1-x)[Bi(Mg2/3Nb1/3)O3] . The permittivity of 400 and the stability <8% from room temperature to 400 °C were obtained, which are promising as high-temperature dielectric medium.

(Invited) Development of Single Crystal Nbn Superconductor on Wide Bandgap GaN By Sputtering and Thermal Annealing

The field of quantum computing is rapidly evolving, and Niobium Nitride (NbN) superconductors have emerged as a pivotal component in the field of quantum computing due to their unique properties. NbN possesses relatively higher superconducting transition temperature (Tc = 15-17 K) as compared to traditional superconductors, making it a promising material for various applications, including superconductor quantum computers, single photon detectors, and hot electron bolometers [1]. The investigation of NbN's superconductivity has been a subject of extensive research over the past few decades. Given that the properties of NbN are intricately linked to its crystal structure, lattice constant, and nitrogen content, precise control of the structural and electrical characteristics of NbN films is essential for the realization of NbN based quantum devices. The (111) planes of δ-NbN exhibit relatively small lattice mismatches with group-III nitride semiconductors (~0.2% for AlN and ~2.7% for GaN) [2], suggesting the potential for integrating crystalline NbN superconductors with nitride semiconductors on a single wafer. Notably, N-polar AlGaN/GaN high electron mobility transistors have been successfully fabricated on NbN films, operating under Tc with a negative differential resistance [3], indicating that the integration of nitride semiconductors and superconductors can be harnessed to create Josephson junctions. To achieve high-quality all-nitride NbN/group-III nitride/NbN Josephson junctions, a comprehensive understanding of the NbN/GaN heterointerfaces is crucial. Despite limited reports on the epitaxial growth of NbN films on nitride semiconductors, little is known about the structural and transport properties of such NbN films. Previously, MBE growth of NbN films have been demonstrated on GaN substrate, showing superconducting critical temperatures exceeding 10 K [4]. In this presentation, our efforts on the development of single crystal NbN thin films on wide bandgap GaN substrate using cost efficient sputtering technique followed by a subsequent high-temperature annealing will be presented. Commercially available single-crystalline GaN (0001)/sapphire templates as well as differently oriented (c and a-planes) sapphire substrates are used as the substrates for the sputtered deposition of NbN films at 20 °C. After the deposition, a high temperature annealing was performed separately at 950 °C for 30 mins under Ar as well as N2 atmosphere. While the as-deposited NbN film on GaN did not exhibit a discernible peak in the high-resolution XRD measurement, a high-intensity, single crystal (111)-oriented NbN film emerged prominently after annealing in both N2 and Ar environments. This suggests a notable enhancement in the crystalline quality of the superconducting material attributable to the thermal annealing process. Although the crystallinity of the NbN layer improves post-annealing, there is an associated increase in grain size and surface roughness. Preliminary findings indicate a reduction in the critical temperature of the NbN film from 12.82 K to 8.69 K after high-temperature annealing, potentially linked to the incorporation of impurities and crystallographic defects during this process. Further investigations using atomic resolution transmission electron microscopy, secondary ion mass spectrometry and X-ray photoelectron spectroscopy will be performed to investigate the influence of annealing duration, temperature, and conditions on the critical temperature, impurity incorporation and defect formation in NbN films deposited with different thickness.In continuation of our recent exploration into depositing crystalline superconducting NbN films on III-nitride semiconductors, this presentation will also focus on our recent advancement of ultrawide bandgap semiconductor materials such as the growth of high-quality quality β-Ga2O3 films and its ternary (AlxGa1-x)2O3 alloys, using metalorganic (MOCVD) and low-pressure (LPCVD) chemical vapor deposition growth techniques. Ga2O3 and (AlxGa1-x)2O3 have emerged as a promising semiconductor material platform for applications in high-power electronics and ultraviolet optoelectronics due to their excellent chemical and thermal stability, as well as high breakdown field strengths. The structural and electrical characteristics of Si-doped β-Ga2O3 and (AlxGa1-x)2O3 thin films will be presented. Additionally, we will present recent findings on achieving phase-pure β-(AlxGa1-x)2O3 films with a record-high Al composition (< 99%) [5]. Our research efforts into understanding the orientation-dependent Al incorporation in β-(AlxGa1-x)2O3 thin films and the determination of band offsets at β-(AlxGa1-x)2O3/β-Ga2O3 heterostructures will be presented. Furthermore, the presentation will touch upon the heteroepitaxial development of other phases of Ga2O3 and (AlxGa1-x)2O3, including α, γ, and κ. Acknowledgment: Dr. Bhuiyan acknowledges the support and guidance of his PhD advisor- Dr. Hongping Zhao at The Ohio State University for the MOCVD growth and characterization of β-Ga2O3 and (AlxGa1-x)2O3 films conducted in Zhao's group. Reference: Yamashita et al., Phys. Rev. Appl. 8, 054028 (2017).Kobayashi et al., Appl. Phys. Express 13, 061006 (2020).Yan et al., Nature 555, 183 (2018).G. Wright et al., APL Mater. 10, 051103 (2022).Bhuiyan et. al, Phys. Status Solidi RRL 17, 2300224 (2023). Figure 1

(Invited) Self-Discharge of Layered Oxide Cathodes Induced by Carbonate-Mediated Hydrogenation

Significant efforts have been made to improve the energy and power characteristics of cathodes in Li-ion batteries, while the research into cathode self-discharge has lagged behind. Self-discharge is the voltage drop experienced by all rechargeable batteries while stored in the charged state. The voltage drop becomes more problematic with increased cathode voltage and temperature. The physicochemical nature of internal reactions leading to cathode self-discharge is hardly understood and seldom discussed.To tackle this challenge, the structure and redox evolution of commercial LiNi0.5Mn0.3Co0.2O2 electrodes and single crystal cathode thin films upon the self-discharge in carbonate-based electrolyte is revealed by surface-sensitive X-ray scattering, spectrometric and electrochemical characterizations in conjunction with thermodynamic analysis. As evidenced by the interfacial toolkits and theoretical calculations, there is an evolution and growth of cathode surface reduction layer in different types of electrolyte after self-discharged from different potentials. Structural and chemical chacterizations as well as the elemental depth profiles within cathode thin film confirms proton-insertion-induced layered cathode hydrogenation. Calculation shows that such process is both thermodynamically and kinetically favorable and is triggered by the interfacial hydrogen atom abstraction of methylene group in carbonate solvent on delithiated cathode surface. A combination of experimental and theoretical studies reveals the carbonate-mediated cathode hydrogenation mechanism accounting for the voltage drop in the self-discharge. This offers additional understanding regarding defect generation and the degradation mechanism in layered cathodes beyond the traditional behaviors of lithium-diffusion-induced self-discharge and rock-salt phase induced cathode degradation. This study offers foundational knowledge of the interfacial degradation of cathode that can be translated to the rational design of improved cathodes and electrolytes, and the self-discharge mechanism studies in other electrochemical ion insertion materials and devices.

Influence of AZO buffer layer on characteristics of ZnO film on glass substrates for Schottky UV photodetector applications

An Al-doped ZnO (AZO) thin film was introduced into the structure of Ag/ZnO schottky Photo detectors (PDs) prepared by magnetron sputtering method on glass substrates. Influences of AZO layer on characteristics of ZnO film and performances of Ag/ZnO schottky PDs were discussed in detail. Results investigated by means of the scanning electron microscopy (SEM), X-ray diffraction (XRD) and Photoluminescence (PL) spectra show that the introduction of an AZO buffer layer can effectively decrease the defects and improve the crystallization of the ZnO thin film. Compared with Ag/ZnO schottky PDs, the Ag/ZnO/AZO PDs possess more excellent rectifying characteristics, the photocurrent (Iph) to dark current (Id) ratio are improved from 6.4 to 100.7. Given the bias voltage at -2 V, the photoresponsivity R and detectivity D* are increased from 0.15 A W-1 to 4.08 × 1010 Jones to 0.69AW-1 and 3.78 × 1011 Jones, respectively. The response speed becomes faster, the response and delay times are decreased from 281 to 395 ms to 178 and 300 ms, respectively. The results provide a new idea for the preparation of high performance ZnO film UV PDs on low-cost glass substrates.

Enhancing thermoelectric performance with perpendicular anisotropic magnetic domain arrays

In recent years, the incorporation of magnetic nanoparticles into thermoelectric materials has been introduced to enhance their performance. However, understanding the impact of dispersed magnetic substances in the matrix on thermoelectric properties, considering different domain directions, is crucial for performance improvement. In this study, we have designed and fabricated high-quality epitaxial single crystal thin films consisting of FePt arrays with varying magnetic domain directions embedded in an Sb2Te3 matrix. Our findings reveal that the electrical transport behavior of the films responds differently to magnetic materials with distinct domain directions, especially in the case of discontinuous arrays. The FePt array oriented perpendicular to the carrier flow direction effectively regulates the direction of carrier movement and local low-energy carriers, functioning as an "energy supplier" to enhance material performance. Simultaneously, the quantum dots formed between the Sb2Te3 and the metal film play the role of carrier channels, further regulating the carrier concentration. Therefore, the perpendicular magnetic anisotropy array synergistically modulates the electrical transport behavior through carriers, resulting in a significant improvement in the thermoelectric power factor. By increasing the S value at the measurement temperature, we achieved a maximum power factor (PFmax) of 3.35 mWm-1K-2 and an average power factor (PFave) of 3.14 mWm-1K-2.

Discovery of Crystallizable Organic Semiconductors with Machine Learning.

Crystalline organic semiconductors are known to have improved charge carrier mobility and exciton diffusion length in comparison to their amorphous counterparts. Certain organic molecular thin films can be transitioned from initially prepared amorphous layers to large-scale crystalline films via abrupt thermal annealing. Ideally, these films crystallize as platelets with long-range-ordered domains on the scale of tens to hundreds of microns. However, other organic molecular thin films may instead crystallize as spherulites or resist crystallization entirely. Organic molecules that have the capability of transforming into a platelet morphology feature both high melting point (Tm) and crystallization driving force (ΔGc). In this work, we employed machine learning (ML) to identify candidate organic materials with the potential to crystallize into platelets by estimating the aforementioned thermal properties. Six organic molecules identified by the ML algorithm were experimentally evaluated; three crystallized as platelets, one crystallized as a spherulite, and two resisted thin film crystallization. These results demonstrate a successful application of ML in the scope of predicting thermal properties of organic molecules and reinforce the principles of Tm and ΔGc as metrics that aid in predicting the crystallization behavior of organic thin films.

Suppression of crystallization process in Atomic Layer Deposited hafnium oxide films

Research on the deposition process of atomic layer deposition (ALD) of hafnium oxide thin films is important because it enhances the performance of nonvolatile memory devices and optical coatings and contributes significantly to advancements within the semiconductor industry. In this study, the alternating deposition of tetrakis(dimethylamido) hafnium and cyclopentadienyl tris(dimethylamino) hafnium precursors was studied. Moreover, this method allows for modulation of the refractive index, surface morphology, preferred orientation and phases of the material. Theoretical calculations revealed that the two precursors selectively adsorb on different crystal planes during the ALD process, elucidating the mechanism behind their preferred orientations. This study reports a method for regulating the phase development of thin films. The crystallization of the hafnium oxide thin films was suppressed by controlling the conditions of deposition.

Mechanism of the effect of gel doping on the electro-optical properties of PDLC

ABSTRACT In this study, the gel molecules were further mixed with liquid crystal polymerisable monomers and introduced into the polymer matrix, and by selecting the ratios of three kinds of gel molecules to polymer monomers, namely, DMDBS, MDBS, and DBS, the liquid crystal/physical gel/polymer composite dispersed liquid crystal thin films with low driving voltage was prepared, and the transitions of transparency and scattering of the thin films were realised and theoretically analysed by the concentration of the gels, polymerisation temperature and polymerisation light intensity on the mechanism of electro-optical properties of the composite system. The results show that the doping of gel leads to a significant improvement in the electro-optical performance of PDLC, unfortunately, the contrast also decreases at the same time.