Ferromagnetic Thin Films Research Articles

Manipulation of high-frequency spin waves in ferromagnetic thin films via magnetic torques induced by ultrafast demagnetization

Spin-based technologies demand the effective excitation and control of high-frequency spin waves in order to increase the operational speed of magnonic logic circuits. An available option for the high-frequency spin wave is the perpendicular standing spin waves (PSSWs) in ferromagnetic thin films. However, the practical utilization of a PSSW is still challenging due to a few unsolved critical issues such as its relatively low amplitude and simultaneous excitation of other PSSW modes. Here, efficient excitation and control of a first-order PSSW mode are demonstrated in Ni80Fe20 thin films using a double-laser-pulse scheme. Based upon our experimental and theoretical investigations, it is found that the precession amplitudes of the Kittel and PSSW modes show strong dependence on equivalent torques (i.e., the averaged torques during fast relaxation process after the second pulse excitation) applied to these two modes. Thus, selective excitation and amplification of the first-order PSSW mode can be realized by manipulating the equivalent torque, i.e., introducing a second laser pulse with an appropriate arrival time and laser fluence. Moreover, the spectral tuning of this single PSSW mode can be achieved by proportionately adjusting the laser fluence of two pump pulses. These findings may pave the way for the realization and construction of future high-performance spintronic devices.

Coercivity enhancement in hematite/permalloy heterostructures across the Morin transition

Interfacial effects between antiferromagnetic (AFM) and ferromagnetic (FM) materials have long been a center of magnetism studies. Aside from the exchange bias occurring at the AFM/FM interface, controlling the coercivity is another significant topic in magnetic recordings. The coercivity of FM materials is often determined through varying grain size, alloy composition, density of defects, etc., which is set during material growth and offers limited room for modification after growth. Hematite (α-Fe2O3) is an AFM material that undergoes a temperature-controlled spin-flip transition, the so-called Morin transition. This transition gives an extra degree of freedom making hematite an intriguing component to study the exchange coupling when interfaced with an FM material. In this work, changes in the magnetic properties of soft magnetic permalloy (Ni81Fe19, or Py) thin films grown on hematite were studied across the Morin transition. Surprisingly, these samples showed a remarkable change in coercivity during the Morin transition. We attribute this effect to the magnetic domain mixture of hematite during the Morin transition. Our findings present a novel method of controlling the coercivity of plain ferromagnetic thin films.

Temperature dependence of the magnon-phonon interaction in hybrids of high-overtone bulk acoustic resonators with ferromagnetic thin films

Temperature dependence of the magnon-phonon interaction in hybrids of high-overtone bulk acoustic resonators with ferromagnetic thin films

Strain-induced magnetic anisotropy of multi-domain epitaxial EuPd2 thin films

Europium intermetallic compounds show a variety of different ground states and anomalous physical properties due to the interactions between the localized 4f electrons and the delocalized electronic states. Europium is also the most reactive of the rare earth metals which might be the reason why very few works are concerned with the properties of Eu-based thin films. Here we address the low-temperature magnetic properties of ferromagnetic EuPd2 thin films prepared by molecular beam epitaxy. The epitaxial (111)-oriented thin films grow on MgO (100) with eight different domain orientations. We analyze the low-temperature magnetic hysteresis behavior by means of micromagnetic simulations taking the multi-domain morphology explicitly into account and quantify the magnetic crystal anisotropy contribution. By ab initio calculations we trace back the microscopic origin of the magnetic anisotropy to thin film-induced uniform biaxial strain.

Low-temperature diffusion in thin-film Pt-(Au-)-Co heterostructures: a structural and magnetic characterization

Formation of functional thin films for nanoelectronics and magnetic data storage via thermally induced diffusion-driven structural phase transformations in multilayer stacks is a promising technology-relevant approach. Ferromagnetic thin films based on Co Pt alloys are considered as a material science platform for the development of various applications such as spin valves, spin orbit torque devices, and high-density data storage media. Here, we study diffusion processes in Pt–Co-based stacks with the focus on the effect of layers inversion (Pt/Co/substrate versus Co/Pt/substrate) and insertion of an intermediate Au layer on the structural transitions and magnetic properties. We demonstrate that the layer stacking has a pronounced effect on the diffusion rate at temperatures, where the diffusion is dominated by grain boundaries. We quantify effective diffusion coefficients, which characterize the diffusion rate of Co and Pt through the interface and grain boundaries, providing the possibility to control the homogenization rate of the Pt–Co-based heterostructures. The obtained values are in the range of 10−16–10−13 cm2 s−1 for temperatures of 150 °C–350 °C. Heat treatment of the thin-film samples results in the coercivity enhancement, which is attributed to short-range chemical ordering effects. We show that introducing an additional Au intermediate layer leads to an increase of the coercive field of the annealed samples due to a modification of exchange coupling between the magnetic grains at the grain boundaries.

Tuning magnetocrystalline anisotropy by Au ion induced defects in NiO thin films

Intercalations and doping effectively induce room-temperature ferromagnetism in antiferromagnetic NiO thin films. This report investigates the defect-controlled ferromagnetic properties of Au ion implanted highly crystalline NiO thin films at different ion fluences. Low energy heavy ion irradiation leads to preferential sputtering of Ni and O atoms that create various kinds of vacancies and interstitial defect states within the matrix. These defect states are responsible for bandgap narrowing and changing the crystallite size and show the defect luminescence in the NiO thin films. It has been observed that the intrinsic Ni and O defects with the non-stoichiometric ratio of these atoms during crystal growth, resulting in uncompensated spins, induce the ferromagnetic properties in the pristine sample and are further modulated with ion fluences. The presence of defects gives rise to energy variations due to the modification of the magnetic environment of Ni ions in the lattice and tune the blocking temperature and magnetocrystalline anisotropy. The magnetocrystalline anisotropy constant (K) reaches its maximum at 70 erg/cm3 with ion fluence and decreases at the highest fluence because of the suppression of exchange interaction by a large number of defect centers. The modulation of anisotropy in NiO thin films is intricately linked to crystallite size, bandgap narrowing, blocking temperature, and the magnetization mechanism, which is a direct result of defect concentrations in the material.

Generation of highly anisotropic physical properties in ferromagnetic thin films controlled by their differently oriented nano-sheets

We fabricated ferromagnetic nano-crystalline thin films of Co, Fe, Co–Fe and Co-rich and Fe-rich, Co–MT and Fe–MT (MT = transition metal), constituted by nano-sheets with a controlled slant. Visualization of these nano-sheets by Scanning Tunneling Microscopy and High-Resolution Transmission Electron Microscopy (HRTEM) showed typically tilt angles ≈56° with respect to the substrate plane, and nano-sheets ≈3.0–4.0 nm thick, ≈30–100 nm wide, and ≈200–300 nm long, with an inter-sheet distance of ≈0.9–1.2 nm, depending on their constitutive elements. Induced by this nano-morphology, these films exhibited large uniaxial magnetic anisotropy in the plane, the easy direction of magnetization being parallel to the longitudinal direction of the nano-sheets. In the as-grown films, typical values of the anisotropy field were between Hk ≈ 48 and 110 kA/m depending on composition. The changes in the nano-morphology caused by thermal treatments, and hence in the anisotropic properties, were also visualized by HRTEM, including chemical analysis at the nano-scale. Some films retained their nano-sheet morphology and increased their anisotropies by up to three times after being heated to at least 500 °C: for example, the thermal treatments produced crystallization processes and the growth of CoV and CoFe magnetic phases, maintaining the nano-sheet morphology. In contrast, other annealed films, Co, Fe, CoZn, CoCu… lost their nano-sheet morphology and hence their anisotropies. This work opens a path of study for these new magnetically anisotropic materials, particularly with respect to the nano-morphological and structural changes related to the increase in magnetic anisotropy.

Large anomalous transverse transport properties in atomically thin 2D Fe3GaTe2

Anomalous transverse conductivities, such as anomalous Hall conductivity (AHC), anomalous Nernst conductivity (ANC), and anomalous thermal Hall conductivity (ATHC), play a crucial role in the emerging field of spintronics. Motivated by the recent fabrication of two-dimensional (2D) ferromagnetic thin film Fe3GaTe2, we investigate the thickness-dependent anomalous transverse conductivities of the 2D Fe3GaTe2 system (from one to four layers). The atomically ultrathin 2D Fe3GaTe2 system shows above-room-temperature ferromagnetism with a large perpendicular magnetic anisotropy energy. Furthermore, we obtain a large AHC of −485 S/cm in the four-layer thickness, and this is further enhanced to −550 S/cm with small electron doping. This AHC is seven times larger than the measured AHC in thicker 2D Fe3GaTe2 (178 nm). The ANC also reaches 0.55 A/K.m in the four-layer structure. Along with these, the four-layer system exhibits a large ATHC (−0.105 ~ −0.135 W/K.m). This ATHC is comparable to the large ATHC found in Weyl semimetal Co3Sn2S2. Based on our results, the atomically ultrathin 2D Fe3GaTe2 system shows outstanding anomalous transverse conductivities and can be utilized as a potential platform for future spintronics and spin caloritronic device applications.

Study of the Long-Range Exchange Coupling in Nd-Fe-B/Ti/Fe Multilayered Structure

The exchange coupling between two ferromagnetic thin films, one with magnetically hard and the other with soft phases, separated by a thin non-magnetic layer, is studied. Nd-Fe-B/Ti/Fe thin film heterostructures were fabricated using DC magnetron sputtering on Si substrates, which were heated in situ at 650 °C using a house-built vacuum-compatible heater. The effect of the thickness of the Ti buffer layer and the annealing temperature on the formation of various phases of Nd-Fe-B was investigated. The effect of the thickness of the non-magnetic Ti spacer layer on the exchange coupling strength between the hard phase Nd-Fe-B ferromagnetic thin layer and the soft phase transition metal Fe layer was experimentally investigated. Hysteresis loops of multilayer thin films indicate an antiferromagnetic coupling was observed when the thickness of the spacer layer was 2 nm. This is within the range of an antiferromagnetic coupling calculation based on RKKY theory predictions.

Tuneable Vertical Hysteresis Loop Shift in Exchange Coupled La0.67Sr0.33MnO3‐SrRuO3 Bilayer

AbstractHarnessing extra degrees of freedom at the heterostructure interface is of crucial importance to bring additional functionalities in modern spintronic devices. Here, a vertical hysteresis loop shift (vertical bias) is demonstrated in an exchange biased system of ferromagnetic thin film heterostructure of La0.67Sr0.33MnO3 (10 nm)‐SrRuO3 (SRO) (20 nm), after field cooling with ±1 T below 100 K close to the Curie temperature (TC) ≈125 K of SRO and loop sweeping under ±1 T field. Besides, a positive exchange bias (HEB) is also observed below TC ≈125 K showing a maximum ≈11 mT at 2 K. The vertical shift is modeled closely using micromagnetic simulations and the layers’ thickness dependency is demonstrated. The reason for the shift is attributed to the simultaneous role of the interfacial antiferromagnetic interaction and the hard anisotropy of SRO against the Zeeman energy. Finally, from the experimental and simulation results, a generalized model of controllable and tunable vertical shift is proposed applicable for other material systems possessing glassy phases, uncompensated/canted spins, absent interfacial exchange coupling, etc., and hence can be informative for the use of vertical shift in future spintronic devices.

Regulatable thermoelectric effect in heterostructured ferromagnetic nanomultilayers

Thermoelectric materials and devices have the potential to directly convert heat into electricity, making them crucial for advancing the energy structure system and achieving the dual-carbon goal. However, the conventional methods of preparing thermoelectric materials and designing devices still face significant challenges, limiting the widespread application of thermoelectric technology. Ferromagnetic metal heterostructured nanomultilayers play a crucial role in generating, transporting, and detecting spin currents. Studying the properties and physical mechanisms of spin-dependent magnetic-thermal-electrical effects in the core material is essential for advancing spin thermoelectrics in the future. In this paper, we investigate the spin-related thermoelectric effects in artificial spin-valve heterostructured nanomultilayers. The spin-current generating layer is made of rare-earth garnet, while the spin-current detecting layer consists of ferromagnetic alloy thin films with different compositions of Fe–Co. It is being investigated to obtain thermal voltage signals with excellent stability and high resolution as well as to achieve the amplification and positive/negative adjustment of these signals. This study can serve as a reference for designing thermoelectric materials and aiding in the development of future high-efficiency spin-thermoelectric conversion devices.

Wafer-scale synthesis of two-dimensional ultrathin films.

Two-dimensional (2D) materials, consisting of atomically thin layered crystals, have attracted tremendous interest due to their outstanding intrinsic properties and diverse applications in electronics, optoelectronics, and catalysis. The large-scale growth of high-quality ultrathin 2D films and their utilization in the facile fabrication of devices, easily adoptable in industrial applications, have been extensively sought after during the last decade; however, it remains a challenge to achieve these goals. Herein, we introduce three key concepts: (i) the microwave assisted quick (∼1 min) synthesis of wafer-scale (6-inch) anisotropic conducting ultrathin (∼1 nm) amorphous carbon and 2D semiconducting metal chalcogenide atomically thin films, (ii) a polymer-assisted deposition process for the synthesis of wafer-scale (6-inch) 2D metal chalcogenide and pyrolyzed carbon thin films, and (iii) the surface diffusion and epitaxial self-planarization induced synthesis of wafer-scale (2-inch) single crystal 2D binary and large-grain 2D ferromagnetic ternary metal chalcogenide thin films. The proposed synthesis concepts can pave a new way for the manufacture of wafer-scale high quality 2D ultrathin films and their utilization in the facile fabrication of devices.

Room-temperature ferromagnetic semiconductor Fe-doped β-Ga2O3 thin films with high saturation magnetization and low coercivity.

Emergent ferromagnetism in β-Ga2O3 with an ultra-wide bandwidth and high electrical breakdown strength offers exciting opportunities for fabricating robust spintronic devices. One pertinent obstacle in the material has been the low saturation magnetization, which precludes its practical application in magnetic devices. In this work, large-scale Fe-doped β-Ga2O3 diluted magnetic semiconductor (DMS) films are synthesized using a polymer-assisted deposition method, and the effect of Fe doping on their structural and magnetic properties is investigated. Remarkably, the optimal sample exhibits a high saturation magnetization (70 emu cm-3 at 300 K), much larger than those in previously reported stable oxide DMS films, as well as a low coercivity (12 Oe at 300 K). Further analysis shows that our samples manifest a typical bound magnetic polaron (BMP) model and the high saturation magnetization originates from the strong ferromagnetic coupling between the BMPs which is enhanced by Ga vacancies. The Fe-doped β-Ga2O3 thin films with high saturation magnetization and low coercivity may provide a promising platform for related semiconductor spintronics.

Multilayer ferromagnetic spintronic devices for neuromorphic computing applications.

Based on ferromagnetic thin film systems, spintronic devices show substantial prospects for energy-efficient memory, logic, and unconventional computing paradigms. This paper presents a multilayer ferromagnetic spintronic device's experimental and micromagnetic simulation-based realization for neuromorphic computing applications. The device exhibits a temperature-dependent magnetic field and current-controlled multilevel resistance state switching. To study the scalability of the multilayer spintronic devices for neuromorphic applications, we further simulated the scaled version of the multilayer system read using the magnetic tunnel junction (MTJ) configuration down to 64 nm width. We show the device applications in hardware neural networks using the multiple resistance states as the synaptic weights. A varying pulse amplitude scheme is also proposed to improve the device's weight linearity. The simulated device shows an energy dissipation of 1.23 fJ for a complete potentiation/depression. The neural network based on these devices was trained and tested on the MNIST dataset using a supervised learning algorithm. When integrated as a weight into a 3-layer, fully connected neural network, these devices achieve recognition accuracy above 90% on the MNIST dataset. Thus, the proposed device demonstrates significant potential for neuromorphic computing applications.

Magnon Topological Transition in Skyrmion Crystal

We study the magnon spectrum in skyrmion crystal formed in thin ferromagnetic films with Dzyaloshinskii–Moriya interaction in presence of magnetic field. Focusing on two low-lying observable magnon modes and employing stereographic projection method, we develop a theory demonstrating a topological transition in the spectrum. Upon the increase in magnetic field, the gap between two magnon bands closes, with the ensuing change in the topological character of both bands. This phenomenon of gap closing, if confirmed in magnetic resonance experiments, may deserve further investigation by thermal Hall conductivity experiments.

Characterization of In‐Plane Piezoelectric Strain of Ferroelectric Thin Films by the Magnetoelectric Coupling Effect

Piezoelectric response of the ferroelectric/piezoelectric thin films is crucial for actuation of micro‐electromechanical systems (MEMS) devices as well as strain‐mediated electronic devices. Among many piezoelectric modes, longitudinal and transverse piezostrain is the most widely used. Various methods have been well established for quantitative characterization of the longitudinal piezostrain, such as laser interferometer and piezoelectric force microscopy. However, it is still a great challenge to characterize transverse piezostrain. Herein, a new method is established to characterize the transverse (in‐plane) piezostrain of ferroelectric/piezoelectric thin films by the inverse magnetoelectric (ME) coupling effect. A ferromagnetic thin film is patterned onto the ferroelectric thin film to form an artificial multiferroic heterostructure. The transverse piezostrain can transfer from the ferroelectric layer to the ferromagnetic layer and shift its ferromagnetic resonance field through the ME coupling effect. By comparing with a control sample of “bulk piezoceramic/ferromagnetic thin film” whose in‐plane piezostrain can be easily measured, the in‐plane piezostrain and piezoelectric coefficient of the ferroelectric thin films are then estimated. The in‐plane piezoelectric coefficient d31 and piezoelectric strain S31 of Pb(Zr,Ti)O3 (PZT) thin films are measured by this method. This new method will promote to fully understand the piezoelectric properties of the ferroelectric/piezoelectric thin films.

Amplitude representation of Landau–Lifshitz equation and its application to ferromagnetic films

In this article we develop a systematic approach to the solution of the Landau-Lifshitz equation in terms of the magnon wave function ψr and apply it to physical phenomena in a thin ferromagnetic film. In this article we represent the modern state of art for the properties of ferromagnetic films and the pumping-induced Bose–Einstein condensation of magnons in them at room temperature. It can be considered as a review on basic principles and the recent advances in the field.

Metamagnetic fluctuation characteristics near dynamic phase transitions.

We experimentally explore the magnetization dynamics of thin ferromagnetic Co films with uniaxial in-plane anisotropy near the dynamic phase transition (DPT) and, in particular, we study the temporal characteristics of anomalous metamagnetic fluctuations that occur in its vicinity, and for which no thermodynamic equivalent exists. For this purpose, we measure the real-time evolution of magnetization trajectories in the relevant dynamic phase space, conduct a Fourier analysis of these experimental results and compare it to a model, in which the fluctuating metamagnetic behavior occurs in a purely random manner, following individual state probability distributions. We find excellent quantitative agreement in between our experimental results and the random state model, clearly indicating that multiperiod time-correlations of magnetic states are not relevant in our DPT system, not even for the occurrence of the anomalous metamagnetic fluctuations that are nonetheless associated with nonperiodic magnetic state evolutions.

Magnon currents excited by the spin Seebeck effect in ferromagnetic EuS thin films

Magnon currents excited by the spin Seebeck effect in ferromagnetic EuS thin films

Controlling the magnetic properties of layered Cr2Te3 thin films via ex-situ annealing

We present a post-growth ex-situ annealing method to control the Curie temperature and magnetic anisotropy of Cr2Te3 van der Waals ferromagnetic thin films. The as-grown Cr2Te3 films exhibit a Curie temperature ∼ 170 K with an out-of-plane magnetic easy axis. Upon high temperature (300 – 400 °C) ex-situ annealing, the magnetic phase of the film changes: the Curie temperature is significantly increased to ∼ 300 K and the magnetic easy axis is reoriented to the in-plane direction. Electronic, chemical, and structural analyses suggest that the c-axis lattice constant expansion, accompanying the annealing process, is the origin of the ex-situ-annealing-induced modulation of the Cr2Te3 film magnetic properties. These results demonstrate that a practical ex-situ annealing process can be effectively used to control the magnetic properties of van der Waals ferromagnetic thin films. Furthermore, the room temperature ferromagnetic ordering emerging upon annealing, along with its robustness against post-growth thermal processes, suggests that the Cr2Te3 thin film is a promising magnetic material candidate for potential application in van-der-Waals-material-based spintronic devices.