Scandium (Sc) and yttrium (Y) co-doped ZrO2 thin films were fabricated via pulsed laser deposition (PLD). The target material, 4 mol% Sc2O3 and 4 mol% Y2O3 co-doped ZrO2 (ScYSZ), was first synthesized via a solid-state reaction. The ScYSZ thin film was deposited on SiO2-Si substrate by laser ablation, using a Q-switched Nd3+:YAG laser (λ = 266 nm) and substrate temperatures of 600 and 800 oC. Micro-structural and conductivity properties of the resulting as-deposited thin films were investigated. X-ray diffraction (XRD) sample patterns revealed that the as-deposited polycrystalline films can be indexed to a cubic structure. In addition, varying the oxygen partial pressures during the deposition was studied. FE-SEM images revealed dense and crack-free surface morphologies achieved at lower oxygen partial pressures (0.01 Pa and 0.1 Pa) and rough surface with porous morphology at high oxygen partial pressures (1.0 Pa and 10 Pa). The thickness of the film is about 120 nm for the thin film deposited at 800 oC substrate temperature (TS). The total conductivity of the thin film was measured using electrochemical impedance spectroscopy (EIS). Interestingly, the calculated total conductivity of the deposited ScYSZ thin film, 0.1 Pa and TS at 800 oC, revealed about 2.8x10-1 S/cmat 700 oC and with activation energy (Ea) of 0.78 eV from 500 oC to 700 oC. The fabricated as-deposited ScYSZ thin film is one of the highest reported highly conducting solid electrolytes that is a promising material for fuel cell or electrolysis cell applications.
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