Thin Devices Research Articles

(Invited) Achieving Stable Black-CsPbI3 Thin-Films for Opto-Electronic Applications

Halide perovskite materials, particularly CsPbI3, have emerged as promising candidates for optoelectronic applications, including solar cells, due to their favorable bandgap of ~1.7 eV for tandem solar cells with silicon-based counterparts. However, their widespread adoption is hindered by their instability and reactivity under ambient conditions, especially to moisture and oxygen. The black phase CsPbI3 polymorphs (α, β, and γ) are only stable at elevated temperatures, and at room temperature (RT), they transform to a yellow, nonperovskite phase (δ) with a wider bandgap of ~2.8 eV, leading to a loss of device performance. To address this challenge, various approaches have been explored to increase the stability of the black phase of CsPbI3 thin films under ambient conditions.[1]One approach is based on interface engineering to induce crystal strain, which increases the stabilization time of the black phase. Thin films of CsPbI3 are prepared on substrates with different thermal expansion coefficients, leading to interfacial strain when quenched from high temperatures (> 320 °C) to RT. This interfacial strain increases the stability of the black phase from a few seconds in bulk polycrystalline samples to a few minutes in thin films, as shown in Fig. 1(a).[2] Additionally, black phase stabilization has been enhanced to a few hours by introducing minimal amounts (< 5%) of dopant elements in the Pb site of CsPbI3, which modifies the texture and generates microstrain in the polycrystalline perovskite films (see Fig. 1(b)).[3] The dopants locally disrupt the normal bonding arrangement and manipulate strains/distortions, and structural relaxation around the dopants is mediated by dynamic disorder and the relatively soft elastic constants of halide perovskite, resulting in the stabilization of the required crystallographic phase.Furthermore, annealing of CsPbI3 thin films in the presence of oxygen has been explored as another approach to increase the stability of the black phase (stable for a few days). Heating the films under oxygen leads to surface oxidation and the formation of Pb-O bonds, resulting in the gathering of Pb and O atoms and the formation of lead oxide. The replacement of I atoms in the inorganic frameworks by O atoms tends to form volatile iodine (I2), but PbI2 is typically detected as the dominant product of degradation during heating in a dry air environment (Fig. 1(c)).[4] The oxidation products on the surface could potentially serve as a protective layer to inhibit further oxidation.Another highly effective approach to enhance the stability of the black phase CsPbI3 in perovskite thin films and devices is through the implementation of coarse photolithography to embed a PbI2-based interfacial microstructure.[5] The resulting films, adorned with a tessellating microgrid ((Fig. 1(d))), display remarkable resistance to moisture-induced decay and demonstrate prolonged stability of the black phase, persisting beyond 2.5 years even in dry environments. This remarkable stability can be attributed to the significant increase in the phase transition energy barrier and the effective limitation of potential yellow phase formation to structurally isolated domains within the microgrid.In summary, our laboratory has effectively implemented various methods to enhance the durability of black phase CsPbI3 thin films when exposed to ambient conditions. These methods comprise inducing interfacial strain, introducing bulk strain through doping, embedding interfacial microstructures, and surface oxidation. These techniques have demonstrated encouraging outcomes in maintaining the black phase of CsPbI3 for extended durations, ranging from a few minutes to several months, and exhibit significant potential for the advancement of practical applications of CsPbI3-based perovskite solar cells. Further exploration and advancement in this direction are anticipated to contribute to achieving long-lasting and efficient perovskite devices.[1] Acc. Mater. Res., 2020, 1, 1, 3–15[2] Science, 2019, 365, 679-684[3] J. Am. Chem. Soc., 2021, 143, 28, 10500–10508[4] unpublished results[5] Nature Commun., 2022, 13, 7513. Figure 1

An Ultrasensitive Laser-Induced Graphene Electrode-Based Triboelectric Sensor Utilizing Trapped Air as Effective Dielectric Layer.

Air, a widely recognized dielectric material, is employed as a dielectric layer in this study. We present a triboelectric sensor with a laser-induced graphene (LIG) electrode and an air-trapped pad using silicone rubber (SR). A very thin device with a thickness of 1 mm and an effective gap for contact-separation between the films of silicone rubber and polyimide (PI) of 0.6 mm makes the device extremely highly sensitive for very low amplitudes of pressure. The fabrication of LIG as an electrode material on the surface of PI is the key reason for the fabrication of the thin sensor. In this study, we showed that the fabricated air-trapped padded sensor (ATPS) has the capability to generate an output voltage of ~32 V, a short-circuit current of 1.2 µA, and attain a maximum power density of 139.8 mW m-2. The performance of the ATPS was compared with a replicated device having a hole on the pad, allowing air to pass through during contact-separation. The observed degradation in the electrical output suggests that the trapped air in the pad plays a crucial role in enhancing the output voltage. Therefore, the ATPS emerges as an ultra-sensitive sensor for healthcare sensing applications.

Nutrition and stability enhancement of yoghurt fortified with encapsulated algae oil through vortex fluidic device

The main challenges to maximising the health benefits of algae oil are improving bioavailability and minimising oxidation while raising consumer acceptance. Processing with a continuous flow thin film vortex fluidic device (VFD) significantly improves Tween 20 encapsulation by comparison with conventional homogenisation processing. Observed through emulsion stability, scanning electron microscope, epi-fluorescence microscopy, dynamic light scattering, peroxide value, confocal microscopy and scanning electron microscopy, algae oil particles were remarkably smaller, ∼250 nm versus ∼2.3 μm, and improved emulsion stability from 10.4 ± 1.3% to 55.4 ± 3.2%. Shown by significantly reduced peroxide value from ∼7 meq O2/Kg to less than 1 meq O2/Kg, oxidation of algae oil was drastically reduced by VFD encapsulation. The different microstructures of original yoghurt, yoghurt with raw algae oil and VFD-encapsulated algae oil were comprehensively studied by confocal microscope and scanning electron microscope. The VFD mediated encapsulated algae oil enriched yoghurt stability with more incorporated microstructure among different components. Sensory properties with higher overall acceptance in categories of taste (7.2 ± 0.32 versus 5.8 ± 0.23) and texture (7.1 ± 0.22 versus 5.3 ± 0.30) is reflected in sensory scores, with a smoother micro-structure of the freeze-dried yoghurt resulting in a more pleasant mouth feel, faster flavor exposure, and a creamier texture.

Interactions of Fundamental Mie Modes with Thin Epsilon-near-Zero Substrates.

Extensive research has focused on Mie modes in dielectric nanoresonators, enabling the creation of thin optical devices surpassing their bulk counterparts. This study investigates the interactions between two fundamental Mie modes, electric and magnetic dipoles, and the epsilon-near-zero (ENZ) mode. Analytical, simulation, and experimental analyses reveal that the presence of the ENZ substrate significantly modifies these modes despite a large size mismatch. Electric and magnetic dipole modes, both with ∼12 THz line widths, exhibit 21 and 26 THz anticrossings, respectively, when coupled to the ENZ mode, indicating strong coupling. We also demonstrate that this strongly coupled system yields notably large subpicosecond nonlinear responses. Our results establish a solid foundation for designing functional, nonlinear, dynamic dielectric metasurfaces with ENZ materials.

Study on Cavitation, Warpage Deformation, and Moisture Diffusion of Sop-8 Devices during Molding Process.

Plastic packaging has shown its advantages over ceramic packaging and metal packaging in lightweight, thin, and high-density electronic devices. In this paper, the reliability and moisture diffusion of Sop-8 (Small Out-Line Package-8) plastic packaging devices are studied, and we put forward a set of complete optimization methods. Firstly, we propose to improve the reliability of plastic packaging devices by reducing the amount of cavitation and warpage deformation. Structural and process factors were investigated in the injection molding process. An orthogonal experiment design was used to create 25 groups of simulation experiments, and Moldflow software was used to simulate the flow mode analysis. Then, the simulation results are subjected to range analysis and comprehensive weighted score analysis. Finally, different optimization methods are proposed according to different production conditions, and each optimization method can reduce cavitation or warpage by more than 9%. The moisture diffusion of the Sop-8 plastic packing devices was also investigated at the same time. It was determined that the contact surface between the lead frame and the plastic packaging material was more likely to exhibit delamination under the condition of MSL2 moisture diffusion because the humidity gradient was easily produced at the crucial points of different materials. The diffusion of moisture is related to the type of plastic packaging material and the diffusion path.

Redirecting Incident Light with Mie Resonance-Based Coatings

The efficiency of thin film photoelectric devices can be improved by redirecting incident electromagnetic radiation along their surface layers. Redirection can be achieved using antireflection coatings made of subwavelength dielectric particle arrays. In this study, we fabricate such coatings, consisting of Ge particles on quartz glass substrates via solid-state dewetting, transforming thin Ge films into compact particles. Using optically transparent substrates, we measure reflection and transmission spectra and determine absorption spectra, showing that substrates coated with Ge particles absorb much more strongly than substrates coated with continuous Ge films. The spectra obtained using objective lenses with different aperture angles indicate that scattered radiation is predominantly directed at glancing angles to the substrate surface. The lateral propagation of scattered radiation is the result of destructive interference, which suppresses both reflected and transmitted radiation.

Effects of vapor duct thickness on the thermal performance of ultra-thin vapor chambers under forced-convection cooling

Ultra-thin vapor chambers (UTVCs) have drawn considerable attention for the growing need of thermal management for thin portable electronic devices. In fact, our novel UTVC design has the potential for high-power applications. This work presents the performance test results under forced convective cooling for our novel UTVCs with thicknesses t = 0.40, 0.50 or 0.58 mm, having vapor duct thickness h = 0.15, 0.25, or 0.35 mm, respectively. The vapor duct thickness is shown to exert great effect on the maximum heat transfer rate (Qmax) and mild effect on the values of thermal resistance (Rvc) of the UTVC. These novel copper–water UTVCs simply comprise a top plate etched with arrayed pillars as the condenser and a mesh-wicked bottom plate as the evaporator and liquid path. The inner surface of the top plate contains cross parallel vapor ducts configured by aligned pillars for vapor spreading all over the vapor chamber. The pillars provide strong structural support, an enlarged condensation area, and a direct shortcut for liquid return. The condenser, with a footprint of 140 × 80 mm2, is cooled by a cold plate with running water of 50 °C. The UTVCs having h = 0.35 or 0.25 mm display values of Qmax of about 140 W or 90 W, respectively, with similar values of Rvc of 0.036–0.055 K/W. The UTVCs with h = 0.15 mm display greatly degraded values of Qmax of about 55 W with higher values of Rvc of 0.053–0.078 K/W. With a shorter return distance for the condensed water directly through the arrayed pillars, this UTVC design demonstrates a rather high Qmax of 140 W using only a single layer of #200 copper mesh wick at h = 0.35 mm.

Dielectric performance of aluminum cation modified graphene oxide membrane: Influence of Al source

This study demonstrates a facile and effective strategy for modifying the dielectric properties of graphene oxide membranes for applications in advanced energy storage devices. The high dielectric constant and low dielectric loss of graphene oxide (GO) make GO-based materials good dielectric separators for developing thin and flexible devices. Controllable tailoring of the dielectric properties of GO membranes is crucial to advance its applications as a dielectric material. Metal cation modification represents one tailoring strategy, but the effects of cation modification are difficult to compare due to its dependence on the metal cation source and the specific physicochemical conditions. In this study, we explore the dielectric properties of GO membranes modified by the introduction of Al3+ from different chemical sources. The dielectric constant and dielectric loss of an unmodified GO membrane and three Al3+ modified GO (AGO) membranes were measured in the frequency range from 1 Hz to 106 Hz, and the performance of a dielectric capacitor fabricated by sandwiching the GO (AGO) membrane between carbon paper electrodes was evaluated by cyclic voltammetry. Results demonstrate that the three different sources of Al3+ differently impact the dielectric properties of GO membranes and thus the performance of as-fabricated dielectric capacitors. Our results advance the fundamental understanding of how metal cation modification impacts the dielectric properties of GO membranes and demonstrate the possibility of designing membranes with controllable dielectric performance.

Investigation on visible spectral response of spray coated Ni doped CuGaS2 thin films for photodetector application

The visible light spectrum attracts vast interest in photodetector applications and takes an integral part in image sensing and communication. Ternary chalcopyrite, such as CuGaS2 can be used for visible light detection owing to its higher light absorption coefficient and wider bandgap. This work presents pristine and Nickel-doped CuGaS2 (0.5, 1.0, 1.5 wt. %) thin film photodetectors prepared by the low-cost Chemical Spray Pyrolysis technique. Structural analysis confirms the formation of the pure CuGaS2 phase and the evidence of Ni inclusion inside the lattice. The optical bandgap of the Ni-doped CGS thin films was reduced compared with pristine CuGaS2, leading to higher absorption in the visible region. The interaction of photons with CuGaS2 and its photoconductive mechanism is probed through photoresponse studies. The responsivity and detectivity were calculated for all the photodetectors under constant bias (1V) and power density (4 mW/cm2). All the devices show excellent photoresponse despite having a higher photosensitive area of 1 cm2 and a very low bias for operation. Particularly, 0.5 wt. % Ni-doped CGS photodetector device showed higher responsivity and detectivity of 1.6 μAW−1 and 19.6 × 106 Jones respectively than others. The admirable optical and electrical properties due to Ni doping played a crucial role in this superior performance. Hence, our investigation suggests Ni-doped CuGaS2 thin films can be employed in the fabrication of thin film photodetector devices.

Back-surface electric field passivation of CdTe solar cells using sputter-deposited CdSe

CdTe back-surface passivation is one of the effective ways to enhance device performance. In recent years, the role of Se passivation in high performance CdSeTe thin film solar cell device has received increasing attention. However, current high-efficiency devices only have a considerable concentration of Se at the very front of the device, while most of the area on the back side of the absorber layer is not passivated by Se. This means that further efficiency improvements may be possible if more defects on the back surface of the absorber layer are passivated by Se, while maintaining the built-in field. Here, based on the magnetron sputtering process, chemical passivation and electric field passivation can be achieved when a small amount of CdSe is deposited on the CdTe back surface. When the CdSe thickness is ∼20 nm (Before annealing), the optimal cell current was increased from 23.8 mA/cm2 to 26 mA/cm2 and the efficiency was increased from 13.1% to 15.5%. External quantum efficiency and impedance spectroscopy measurements indicate that the performance improvement is due to the reduction of the interfacial recombination current on the back surface.

Proximity-induced superconductivity in type-II Weyl semimetal NbIrTe4

Heterostructures between conventional superconductors and materials with different electronic ground states have emerged as a powerful method for exploring the exotic superconducting properties induced by the proximity effect. Here, we investigate Andreev transport through the interface between an s-wave superconductor Nb and a type-II Wely semimetal NbIrTe4. The differential conductance measurement reveals an anomalous zero-bias conductance peak and prominent subgap structures at low temperatures. Furthermore, we found that these subgap structures are not only related to the interface coupling strength but also influenced by the thickness of the NbIrTe4 flake. For thin devices (≤100 nm), the differential conductance spectra only exhibit a single-gap structure. While in thicker devices (∼150 nm), we observed the distinct double-gap structure, which is likely to originate from the proximity-induced superconductivity gap on the bulk and surface of the NbIrTe4 flakes. These results can provide a good reference for understanding the superconducting phase in type-II Weyl semimetals and take a step toward its future application in the field of superconducting electronics.

Integrated Sensing and Acoustofluidic Functions for Flexible Thin Film Acoustic Wave Devices Based on Metallic and Polymer Multilayers

Surface acoustic wave (SAW) devices are generally fabricated on rigid substrates that support the propagation of waves efficiently. Although very challenging, the realisation of SAW devices on bendable and flexible substrates can lead to new generation SAW devices for wearable technologies. In this paper, we report flexible acoustic wave devices based on ZnO thin films coated on various substrates consisting of thin layers of metal (e.g., Ni/Cu/Ni) and/or polymer (e.g., polyethylene terephthalate, PET). We comparatively characterise the fabricated SAW devices and demonstrate their sensing applications for temperature and ultraviolet (UV) light. We also investigate their acoustofluidic capabilities on different substrates. Our results show that the SAW devices fabricated on a polymer layer (e.g. ZnO/PET, ZnO/Ni/Cu/Ni/PET) show enhanced temperature responsivity, and the devices with larger wavelengths are more sensitive to UV exposure. For actuation purposes, the devices fabricated on ZnO/Ni/Cu/Ni layer have the best performance for acoustofluidics, whereas insignificant acoustofluidic effects are observed with the devices fabricated on ZnO/PET layers. We propose that the addition of a metallic layer of Ni/Cu/Ni between ZnO and polymer layers facilitates the actuation capability for the acoustofluidic applications while keeping temperature and UV sensing capabilities, thus enhancing the integration of sensing and acoustofluidic functions.

100 Gbps PAM4 ultra-thin photodetectors integrated on SOI platform by micro transfer printing.

The integration of compact high-bandwidth III-V active devices in a scalable manner is highly significant for Silicon-on-insulator (SOI) photonic integrated circuits. To address this, we demonstrate the integration of pre-fabricated 21 × 57 µm2 InGaAs photodetector (PD) coupons with a thickness of 675 nm to a 500 nm SOI platform using a direct bonding micro-transfer printing process. The common devices are coupled to the Si waveguides via butt, grating and evanescent coupling schemes with responsivities of 0.13, 0.3 and 0.6 A/W respectively, in line with simulations. The thin device facilitates simplified high-speed connections without the need for an interlayer dielectric. A back-to-back data communication rate of 50 Gb/s is achieved with on-off keying and with post processing of four-level pulse-amplitude modulation (PAM4) 100 Gb/s is realized. Potentially, around 1 million devices per 75 mm InP wafer can be attained. The integration of compact PDs exhibited in this work can be extended to modulators and lasers in the future.

Effect of the gas flow rate in the focused-oxygen plasma treatment of solution-processed indium oxide thin film transistors

In2O3 is a transparent semiconductor layer due to its transparency, high mobility, and solution processability. In this paper, we study the effect of focused oxygen plasma treatment on solution processed indium oxide films annealed at 250 °C and analyze the effect of the gas flow rate. Thin film transistor devices were prepared based on pristine In2O3 films and films treated with oxygen plasma using flow rates of 3, 6, and 9 sccm. The results show that controlling the plasma flow rate can be used to finetune the device characteristics, and the selecting the optimal flow rate is important to improve the electron mobility, threshold voltage, on/off current ratio, and the electrical stability of the devices. The In2O3 TFTs treated at 6 sccm showed the best performance with mobility of 2.19 cm2V−1s−1, threshold voltage of of 4.25 V, and on/off current ratio of 2.13 × 106. The successful fabrication of high-performance, low-temperature solution deposited indium oxide transistors using the focused oxygen plasma treatment for electrical device applications demonstrates the practical potential of this treatment method for future transparent electronics.

Oriented design of wafer-level stacking structures to enhance reliability of laser debonding of thin devices

The laser debonding process in advanced packaging has become a key technology for the debonding of ultra-thin wafers. However, improving the reliability of debonding and efficient removal of adhesive residues from thin and brittle devices remains challenging. Here, we fabricated bonding pairs formed by inorganic responsive layer, thermal buffer layer, and adhesive layer based on a structural design-oriented strategy. Experimental results showed that the thinned device wafers did not show any damage after laser debonding, and the residual adhesive film could be easily torn off. The response layer (a-Si:H) with high temperature resistance and corrosion resistance has strong photosensitivity under the action of ultraviolet laser with a wavelength of 355 nm, and rapidly decomposes to release H2 and polysilicon nanoparticles. The thermal buffer layer is primarily intended to block the heat flow and compensate internal stress. The adhesive layer acts both as an adhesive during temporary bonding and as a barrier to laser-induced gas shock waves and plasma etching of device layers during debonding. This rational structural design contributes to improves the reliability of the laser debonding process and shows great potential for application in the next generation of thin device debonding.

Semitransparent Perovskite Solar Cells with Ultrathin Protective Buffer Layers.

Semitransparent perovskite solar cells (ST-PSCs) are increasingly important in a range of applications, including top cells in tandem devices and see-through photovoltaics. Transparent conductive oxides (TCOs) are commonly used as transparent electrodes, with sputtering being the preferred deposition method. However, this process can damage exposed layers, affecting the electrical performance of the devices. In this study, an indium tin oxide (ITO) deposition process that effectively suppresses sputtering damage was developed using a transition metal oxides (TMOs)-based buffer layer. An ultrathin (<10 nm) layer of evaporated vanadium oxide or molybdenum oxide was found to be effective in protecting against sputtering damage in ST-PSCs for tandem applications, as well as in thin perovskite-based devices for building-integrated photovoltaics. The identification of minimal parasitic absorption, the high work function and the analysis of oxygen vacancies denoted that the TMO layers are suitable for use in ST-PSCs. The highest fill factor (FF) achieved was 76%, and the efficiency (16.4%) was reduced by less than 10% when compared with the efficiency of gold-based PSCs. Moreover, up-scaling to 1 cm2-large area ST-PSCs with the buffer layer was successfully demonstrated with an FF of ∼70% and an efficiency of 15.7%. Comparing the two TMOs, the ST-PSC with an ultrathin V2Ox layer was slightly less efficient than that with MoOx, but its superior transmittance in the near infrared and greater light-soaking stability (a T80 of 600 h for V2Ox compared to a T80 of 12 h for MoOx) make V2Ox a promising buffer layer for preventing ITO sputtering damage in ST-PSCs.

Progressive 3D Reconstruction for Collaborative Construction of Digital Twins

Digital twins are increasingly useful in metaverse-related applications, but their construction process usually involves deep technical expertise and costly resources. This position paper demonstrates an early prototype (see Figure 1) of a web-based digital twin authoring system to enable untrained users to collaboratively build digital twin environments. The system aims to explore the combination of photogrammetry and GAN-based machine learning models to enable near-real-time collaboration between capture client (scanning objects using common smartphone cameras) and editing client (constructing 3D scenes on thin client devices) users.

Neutral density filter-based catadioptric optical design for thin virtual reality head-mounted device

Virtual reality (VR) has been a popular trending technology affecting the lifestyles of humans. Especially for near-eye displays, VR head-mounted devices (HMDs) are designed accordingly and widely used in different fields. Nowadays, small structure size is a challenge and an urgent need for the VR HMD, while catadioptric optics is an effective and promising approach to solving this problem. Thus, this paper develops three kinds of catadioptric optical systems for thin VR HMDs by adjusting the configuration positions of the light refraction module created by the aspheric lens and the light partial reflection module formed by the neutral density (ND) filter. The comparison results of the three designs in terms of structure size and imaging quality show that multiple reflections during the light divergence process can effectively reduce the thickness of the optical structure. Reasonable transmission during the reflection process is also favorable for size reduction. Based on the designed catadioptric optical module, a varifocal VR HMD is developed to mitigate the vergence-accommodation conflict, thereby improving the image quality and the sensory experience of users.

Effect of substrate thinning on heavy ion induced single event effect in silicon carbide power junction barrier Schottky diodes

Experimental responses of two different substrate thicknesses of SiC Junction-Barrier-Schottky (JBS) diodes are presented by Kr and Bi ions irradiation experiments. Three bias voltages of 250 V, 275 V, and 300 V were chosen to analyse single event leakage current (SELC) degradation and single event burnout (SEB) in the 650 V-rated devices with standard (350 μm) and thin (150 μm) substrates, respectively. Measured data indicate that under the same bias voltage and heavy ion parameter conditions, the degree of leakage degradation of the device is weaker for the SiC JBS with thin substrate structure. Measured data also indicate that when the device at a bias voltage of 300 V by the Bi-ion irradiation experiment, SEB occurred in the standard substrate device, but only leakage current degradation occurred in the thin substrate device. The weakening of effective charge deposition and impact ionization rate in thin-substrate devices are the main reasons for SELC degradation and SEB threshold increasing. Corresponding TCAD simulations are also utilized to analyse physical parameters and confirm the mechanism.

Edge Computing for Computer Games by Offloading Physics Computation

Realistic graphics and smooth experience in computer games come with the cost of increased computational requirements on the end-user devices. Emerging Cloud Gaming that enables executing the games on thin devices comes with its disadvantages such as susceptibility to network latency and the incurred cloud computing cost for the game service provider. The monolithic architecture of the game engines also presents an issue for cloud gaming where scaling efficiency in the cloud turns out to be limited. This paper proposes using edge computing principles to offload a subset of the local computations executed by games to a nearby edge server typically assigned for gaming applications. Specifically, we focus on physics computations since depending on the number of objects and their interactions modes this part may have considerable computational cost. In order to demonstrate the effectiveness of our approach we developed an edge gaming framework called Edge Physics Simulation (EPS) using the open-source game engine Bevy and the Rapier physics engine. We come up with an experiment setup in which a game scene with a high number of objects is executed using both standard local computation approach and using the proposed EPS method. In the experiments up to 8000 objects of varying shape complexities are employed to trigger significant computational load due to the collision detection process. Assessment metrics used are average physics computation time, resource consumption of local device and, the breakdown of the physics duration into its critical components such network time, simulation time and compression time. Our results show that EPS significantly reduces physics time compared to local execution. For the highest number of objects 75% reduction in physics computation time is reported where breakdown of physics time is further analyzed.