Thicknesses Of Constituent Layers Research Articles

Dependence of ?Reststrahlen? bands in far-infrared reflectivity on configuration of GaAs/AlAs multiple quantum well heterostructures

Far infrared reflectivity measurements are performed on a series of GaAs/AlAs multiple quantum well (MQW) heterostructures with systematically varied thicknesses of the constituent layers. In addition to the artificial anisotropy we observe two distinct bulk-like “Reststrahlen” regions. The widths of the GaAs-like and the AlAs-like “Reststrahlen” bands strongly depend on the relative thicknesses of the constituent layers of the MQW heterostructures, in excellent agreement with the predictions of the effective-medium theory.

Band offset of the ZnSe–ZnTe superlattices: A fit to photoluminescence data by k⋅p theory

The ZnSe–ZnTe superlattices have attracted considerable attention as possible blue/green light emitters. Although these superlattices have been successfully fabricated and show intense photoluminescence, there are many basic issues about this system which still remain unresolved. The most important of them is the value of the valence band offset between ZnSe and ZnTe. We have studied the band structure of ZnSe–ZnTe superlattices. Our calculations are based on second order k⋅p theory and include the effects of strain and spin-orbit splitting on the superlattice band structure. We have investigated the dependence of the superlattice band gap on the valence band offset. Based on the assumption that the photoluminescence from the superlattice corresponds to a bound exciton at a Te1 isoelectronic center in ZnSe, we have fit the experimental photoluminescence data with k⋅p theory to obtain the best value of the valence band offset. The value we find is 0.97±0.10 eV. Alternatively, assuming that the photoluminescence was due to band-to-band transitions we obtain a valence band offset of 1.20±0.13 eV. We have also calculated the superlattice band gap as a function of the constituent material layer thicknesses for the first valence band offset quoted. We expect these results to be important in gaining an understanding of the value of the valence band offset, and the nature of the photoluminescence from this system.

Anisotropy effects in P-wave and SH-wave stacking velocities contain information on lithology

Depths calculated from S-wave stacking velocities and event times almost always exceed actual depths, sometimes by as much as 25 percent. In contrast, depths from corresponding P-wave information are often within 10 percent of actual depths. Discrepancies in depths calculated from P- and S-wave data are attributed to velocity anisotropy, a property of sedimentary rocks that noticeably affects S-wave moveout curves but leaves the P-wave relatively unaffected. Two careful studies show that discrepancies in depths, and hence in constituent layer thicknesses, correlate with lithology. Discrepancies ranged from an average of 13 percent (Midland basin) to greater than 40 percent (Paloma field) in shales, but were within expected errors in massive sandstones or carbonates. Hence anisotropy effects are indicators of lithology. Analysis of seismic data involved determining interval velocities from stacking velocities, calculating layer thicknesses, and then comparing layer thicknesses from S-wave data with thicknesses from P-wave data. When the S-wave thicknesses were significantly greater than the P-wave (i.e., outside the range of expected errors), I concluded the layer was anisotropic. I illustrate the technique with data from the Paloma field project of the Conoco Shear Wave Group Shoot.