Thickness Of Other Layers Research Articles

Longitudinal changes in each retinal layer thickness in patients with non-ischemic central retinal vein occlusion

BackgroundTo identify longitudinal changes in each retinal layer thickness in central retinal vein occlusion (CRVO) patients with resolved macular edema (ME).MethodsIn this retrospective observational study, CRVO patients without a recurrence of ME for more than 3 years and normal controls were enrolled. Each retinal layer thickness of the parafoveal area, including ganglion cell complex (GCC), inner nuclear layer (INL), outer plexiform layer (OPL), outer nuclear layer (ONL), photoreceptor layer (PRL), and retinal pigment epithelium (RPE) was measured. After the resolution of ME, three more examinations with a 1-year interval were analyzed.ResultsA total of 98 eyes were enrolled, 50 eyes for the control group and 48 eyes for the CRVO group. The baseline GCC thickness was 114.2 ± 15.6 μm and 104.2 ± 25.4 μm in the control and CRVO groups, respectively, which was significantly different (P = 0.022). The thicknesses of other layers including INL, OPL, ONL, PRL, and RPE were not significantly different at baseline. The reduction rate of GCC, INL, OPL, and ONL was − 3.92, − 1.33, − 0.91, and − 2.31 μm/year in the CRVO group, whereas no significant reductions were observed in the control group. Best-corrected visual acuity was significantly associated with changes in the GCC, OPL, and ONL in the CRVO group.ConclusionsIn patients with CRVO, even in the absence of recurrent ME, retinal damage progresses over time, evidenced by thinning of the inner retina and outer retina including OPL and ONL. These changes may be associated with alterations in visual function.

Influence of nonlinear semiconductor layer on optical properties in one-dimensional photonic crystals

In this paper, an attempt has been made to investigate a one-dimensional photonic crystal containing N-doped germanium semiconductor as a nonlinear defect layer with an intensity-dependent refractive index, silica (SiO2) and zinc selenide (ZnSe) as crystal cells. Bistability of the TE polarization of the transmission spectrum due to the nonlinear property of the defect layer is investigated by the transfer matrix method (TMM). The refractive index of the germanium nonlinear semiconductor layer is simultaneously depending on the doping density and the intensity of the irradiated light. The changes in both factors are investigated. The impact on the transmission spectrum of the bistability threshold due to the change in the thickness of the defect layer, the thickness of other layers of crystal cells, and the angle of incident light are investigated. The nonlinear effect caused by light intensity as well as doped density effect on the germanium nonlinear semiconductor medium is used simultaneously. As a result, the nonlinear effect caused by the light intensity to create bistability is more than the doping density.

Profiling exciton generation and recombination in conventional and inverted bulk heterojunction organic solar cells

Applying the optical transfer matrix method and the drift-diffusion equations, the efficient light absorption, exciton generation, and recombination rate in bulk heterojunction (BHJ) organic solar cells (OSCs) with conventional and inverted configurations are studied. Analysing the influence of the electric field component of the electromagnetic radiation propagating through the layered structure of BHJ OSCs and using contour plots of normalized modulus squared of the electric field, the constructive interference points (CIPs) which represent the positions of maximum absorption of photons and hence generation of excitons within the active layer are investigated for both the conventional and inverted OSCs. Also, the influence of the thicknesses of other layers in both the inverted and conventional structures is investigated. It is found that except the thickness of MoO3 in the inverted structure the thicknesses of other layers do not have any significant influence on CIPs. The maximum CIP occurs at an active layer thickness of 190 nm, regardless of the thickness of the second layer, which is MoO3, Ag, or ITO in the inverted structure and PEDOT:PSS, Al, or ITO in the conventional structure. The results of 3D plots of the normalized modulus squared of the electric field reveal that the absorption of photons at the end of the active layer in the inverted structure is higher than that in the conventional structure for all the effective wavelengths and different active layer thicknesses. It is expected that this study provides a deeper understanding of exciton generation within the two structures.

傾斜粉末成形体の焼結・冷却過程における応力解析(S18-3 粉末成形とその評価(3),S18 粉末成形とその評価)

The influence of material properties and graded structures on the internal stresses in multilayers during sintering as well as cooling is studied by numerical analysis with the aim of suppressing surface cracking. Although the basic equation that governs the stress generation during sintering is the same as cooling, effects of changing graded structures are different, depending on the related material constants. When the sintering stress increases upward to the top layer contrary to the decrease in thermal expansion coefficient, thinning the top layer results in the rise in tensile stress on the surface during sintering, while the thermal stress during cooling is lowered. To reduce the stress through the whole process, controlling the thickness of other layers is needed at the same time.

High-field sensitive magnetic tunneling junctions fabricated by inductively coupled plasma sputtering

High tunneling magnetoresistance ratios (TMR) up to 44.6% were observed at room temperature on magnetic tunnel junctions (MTJs) with Ta20/Ni 81Fe 1920/Co 90Fe 102/Al(1 nm)-oxide/Co 90Fe 102/Ni 81Fe 197/Fe 50Mn 5020/Ta5 (the thickness of other layers is in nm) structures fabricated by using an inductively coupled plasma sputtering system operating at a base pressure of 5×10 −10 Torr. High field sensitivity up to 6.1%/Oe has been achieved in these MTJs with dimensions of 120 μm×120 μm by using extremely soft ferromagnetic (FM) Ni 81Fe 19/Co 90Fe 10 electrode. Small ferromagnetic coupling field (11 Oe) between the top and bottom FM electrodes, high breakdown electrical field (1.2×10 7 V/cm), and high V h (340–414 mV) at which the TMR decreases to 50% of its initial value, were obtained as the surface roughness of the bottom FM electrode ( R ms <3 A ̊ ) and Al-oxide ( R ms <1 A ̊ ) layer have been improved.