Influence of nonlinear semiconductor layer on optical properties in one-dimensional photonic crystals

Abstract

In this paper, an attempt has been made to investigate a one-dimensional photonic crystal containing N-doped germanium semiconductor as a nonlinear defect layer with an intensity-dependent refractive index, silica (SiO2) and zinc selenide (ZnSe) as crystal cells. Bistability of the TE polarization of the transmission spectrum due to the nonlinear property of the defect layer is investigated by the transfer matrix method (TMM). The refractive index of the germanium nonlinear semiconductor layer is simultaneously depending on the doping density and the intensity of the irradiated light. The changes in both factors are investigated. The impact on the transmission spectrum of the bistability threshold due to the change in the thickness of the defect layer, the thickness of other layers of crystal cells, and the angle of incident light are investigated. The nonlinear effect caused by light intensity as well as doped density effect on the germanium nonlinear semiconductor medium is used simultaneously. As a result, the nonlinear effect caused by the light intensity to create bistability is more than the doping density.