Thin films, either deposited or native (i.e., oxide layers), have been widely exploited in different technological fields (e.g., optics, electronics, and biomedicine) to improve the efficiency of devices and extend their range of applications. Among the different physical/chemical characteristics of thin layers that determine their overall properties and therefore their potential for new applications, thickness has been demonstrated to play a pivotal role in affecting different phenomena; this is particularly significant at nanoscale dimensions, since nanostructured materials often behave very differently from their bulk counterparts. For example, thickness affects the microstructure, morphology, and optoelectronic properties of ZnS, ZnO, and Mo-doped indium oxide thin films, as well as the electrical properties of MOS structures in microelectronic and optical devices. In the biomedical field, the thickness of the superficial TiO2 layer affects the biological response of titanium-based materials. Due to its effects on several optical, physical, and biological events, different techniques have been developed to precisely determine the thickness of thin oxide layers, such as, for example, that of SiO2 9 and TiO2. 10 However, the majority of these methods have limitations that can compromise their applicability to a wide range of samples and materials. In addition, these techniques (e.g., X-ray photoelectron spectroscopy (XPS) sputter profiling) may damage the sample surface and alter its micro and nanometric topographical features. One of the most efficient nondestructive methods to precisely measure the thickness of thin organic and inorganic layers is ellipsometry. Infrared (IR) spectroscopy has found increasing applications in materials science, biology, and nanotechnology due to the possibility of determining the surface chemical composition of thin inorganic and molecular layers. However, to our knowledge, this technique has never been used to determine quantitatively the thickness of inorganic thin films. In this work, we demonstrate that ellipsometry and Fourier transform infrared (FT-IR) spectroscopy can be combined to estimate the absorption coefficient and the thickness of IRactive nanometric oxide layers. In particular, we selected the amorphous TiO2 layer present on the surfaces of bulk titanium (cpTi) and Ti6Al4V resulting from natural passivation and chemical oxidation with H2SO4/H2O2 solutions. 28–33 Results from this study will permit the exclusive use of FT-IR to determine the thickness of amorphous titanium dioxide thin films. More generally, our approach can be potentially applied to investigate a wider variety of materials (IR-active thin films deposited on a reflective substrate), without altering their surface topography.
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