Previous work carried out in this laboratory, in the field of reversible chemisorption, has been concerned with the thermodynamics of the systems copper—sulphur and silver-sulphur. We have measured in particular, the maximum quantities of sulphur adsorbed on the close-packed faces of these two metals. However, the values thus obtained could not be related in a simple way to the topography of the different crystallographic orientations studied. Considerations based on the mean distance between atoms of adsorbed sulphur suggest that the saturated adsorbed layer consists not only of atoms from the gas phase but also of atoms from the underlying metal : the layer can be envisaged as a two-dimensional adsorbed compound. In order to define the structure and the growth mechanism of these adsorbed layers we have undertaken a study by low-energy electron diffraction. The simultaneous use of radioactive sulphur has enabled us to determine, with precision, the number of adsorbed atoms per unit surface area at different stages of the reaction. This information is indispensable for the interpretation of the diffraction patterns. In addition, it was possible, by the tracer method, to verify a posteriori that the adsorption stage had not been passed. The most complete part of the investigation has been carried out on the (111), (100) and (110) faces of copper in the presence of hydrogen sulphide marked with sulphur-35. The surfaces were initially prepared by means of bombardment with argon ions followed by thermal treatment in ultrahigh vacuum. The activity of the surface was measured at the end of each experiment, after bringing the specimen into the atmosphere, by means of classical counting methods. The essential characteristics of the mechanism of formation and growth of the adsorbed layer were determined from a large number of experiments carried out over a wide range of temperature and pressures. The development of the reaction on the three faces can be described as follows : A dissociative adsorption occurs with localization of S 2− on sites of maximum coordination imposed by the supposedly rigid arrangement of atoms in the metallic substrate. At a critical coverage of this first, relatively dispersed, phase there appear attractive forces between adsorbed sulphur atoms. We consider this attractive binding to be due to copper atoms which insert themselves in the adsorbed layer: this process is, in fact, the nucleation of a true compound or adsorbed two-dimensional sulphide. The compound then grows from the dispersed phase until the surface becomes completely covered. The saturated state thus obtained corresponds quantitatively to the values previously determined from experiments carried out under conditions of reversible chemisorption. The structures of the adsorbed layers are sharply affected by the topography of the different faces. In the case of (111) and (100) surfaces there exists a coincidence lattice between the network of the two-dimensional adsorbed sulphide and that of the underlying metal. The (110) surface behaves differently in that the epitaxy is characterized by the localization of sulphur atoms in the grooves which constitute the special arrangement of underlying metal atoms. However the minimum sulphur-sulphur distance observed for the saturated states depends only very slightly on the crystalline orientation of the metal and it is only slightly different from the sulphur-sulphur distance in three-dimensional copper sulphide. One may therefore consider the saturated adsorbed layers to be derived from a single twodimensional sulphide for which the structure is determined by the crystalline face of the metal on which it is adsorbed. The proposed mechanism reconciles the classical theories of adsorption in sites with the recent hypotheses concerning the mixed nature of adsorbed layers ; this interpretation may be extended to systems other than copper-sulphur.