An ideal metal/p-type 4H-SiC interface with a “free-pinned” Fermi level has been achieved by the combination of sacrificial thermal oxidation (SO) and hydrogen plasma treatment (HPT) on the SiC surface. It is found that the Fermi level pinning could be attributed to the contaminants and defects of the p-type 4H-SiC surface. According to the X ray photoelectron spectroscopy and deep-level transient spectroscopy results, the oxygen and carbon contaminants decreased after SO. However, high-density carbon interstitial-related defects were generated close to the valance band during oxidation. With the subsequent HPT, the chemical residues and detrimental carbon-induced defects were eliminated by the reaction with hydrogen atoms. The p-type 4H-SiC surface was chemically and electrically well saturated with the surface Fermi level position close to the bulk position. An analytical model for the elimination of surface contaminants and defects was proposed to reveal the underlying mechanism of Fermi level depinning.
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