Thermal Noise Cancellation Research Articles

A Quadrature Balanced N-Path Receiver for Frequency Division Duplex With Thermal and Phase Noise Cancellation Under Antenna VSWR

A Quadrature Balanced <i>N</i>-Path Receiver for Frequency Division Duplex With Thermal and Phase Noise Cancellation Under Antenna VSWR

Thermal-Noise Cancellation for Optomechanically Induced Nonreciprocity in a Whispering-Gallery-Mode Microresonator

Magnetic-free optomechanically induced nonreciprocity may stimulate a wide range of practical applications in quantum technologies. However, how to suppress the thermal-noise flow from the mechanical reservoir is still a difficulty encountered in achieving optomechanically nonreciprocal effects on a few- and even single-photon level. Here, we show how to realize thermal-noise cancellation by quantum interference for optomechanically induced nonreciprocity in a whispering-gallery-mode (WGM) microresonator. We find that both nonreciprocal transmission and amplification can be achieved in the WGM microresonator when coupled to two coupled mechanical resonators. More interestingly, the thermal noise can be suppressed when the two coupled mechanical resonators couple to a common thermal reservoir. The thermal-noise cancellation is induced by the destructive quantum interference between the two flow paths of the thermal noises from the common reservoir. The scheme of quantum-interference-induced thermal-noise cancellation can be applied in both sideband-resolved and unresolved regimes, even with strong backscattering taken into account. Our work provides an effective way to achieve nonreciprocal effects on a few- or single-photon level without precooling the mechanical mode to the ground state.

A low jitter sub‐sampling phase‐locked loop with sampling thermal noise cancellation technique

AbstractThe traditional sub‐sampling phase‐locked loop faces the tradeoffs between phase noise and spur, in that low in‐band phase noise requires large sampling capacitor size but at the sacrifice of spur performance. This paper presents a sub‐sampling PLL aimed at minimizing in‐band phase noise via sampling thermal noise cancellation technique. It enables the substantial reduction of in‐band phase noise while reducing the sampling capacitor size. In addition, due to the reduction of the sampling capacitance, the reference spur performance of the PLL is improved, and the power consumption of the isolation buffer is reduced. Implemented in a 65 nm CMOS process, the in‐band phase noise at 200 kHz offset is −133.4 dBc/Hz at 2.2 GHz and integrated jitter is 80 fsrms. The reference spur is −67 dBc. It consumes 5.5 mA from 1.2 V supply and occupies 0.72 mm2.

A Wideband Sub-㎓ Receiver Front-end Supporting High Sensitivity and Selectivity Mode

A low noise and highly linear wideband RF front-end circuit for sub-㎓ Internet of Things (IoT) applications is proposed. The proposed frontend is composed of a broadband single-ended LNA, a wideband differential LNA employing thermal noise cancellation technique, and an in-phase and quadrature (I/Q) linearized harmonic rejection mixer (HRM). Depending on the interference environment, the proposed front-end supports two operation modes having high sensitivity and selectivity performance by enabling or disabling the first building block of the single-ended LNA. At high sensitivity mode, the frontend shows a voltage gain (A<SUB>v</SUB>) of greater than 38 ㏈, a noise figure (NF) of less than 2.1 ㏈, an input-referred third-order intercept point (IIP3) of greater than -23 ㏈m, and an input-referred second-order intercept point (IIP2) of greater than +15 ㏈m in the sub-㎓ frequency band. Concerning for high selectivity mode, it achieves an Av of greater than 22.5 ㏈, a NF of less than 4.7 ㏈, an IIP3 of greater than – 6.8 ㏈m, and an IIP2 of greater than +50 ㏈m over the same operating frequency range.

An inductor-less CMOS broadband balun gm-boosting LNA exploiting noise cancellation techniques

This paper presents a 100 MHz to 6 GHz broadband inductor-less single-to-differential balun gm-boosting low-noise amplifier (LNA) for multi-standard radio applications. Two mechanisms of noise cancellation techniques have been innovatively introduced in this work. To achieve the wideband input matching, high gain, and low noise figure simultaneously, a feed-forward thermal noise cancellation technique has been exploited in the design of the inverting amplifier for transconductance enhancement. Moreover, the balanced balun operation transforms the thermal noise of the common-gate transistor into a common-mode signal, and cancels it at the LNA’s differential outputs. The proposed design has been fabricated in a standard 0.18-um RF CMOS technology and occupies a die area of 0.04 mm2. Measurement results have shown that it has achieved a good performance over the whole operation frequency range of interest (100 MHz to 6 GHz) with a gain of 15.5 dB, IIP3 of 1.5 dBm, minimum NF of 3.0 dB and current dissipation of 8 mA at 1.8 V supply voltage.

A Blocker-Tolerant Inductor-Less Wideband Receiver With Phase and Thermal Noise Cancellation

A wideband receiver architecture with simultaneous phase and thermal noise cancellation greatly relaxes the traditional trade-offs between noise, out-of-band linearity, LO phase noise and power consumption. The architecture employs thermal noise cancelling and avoids voltage gain at blocker frequencies, and exploits the symmetry of phase noise to cancel the reciprocal mixing products in the presence of either single-tone or modulated blockers. The resulting design in 28 nm CMOS has 2 dB noise figure from 100 MHz to 2.8 GHz. Without using any inductors on-chip including the RF VCO, the receiver's NF is below 14 dB under either a 0 dB CW blocker or a -10 dBm WCDMA blocker.

Interference Rejection in UWB LNA using Front-End Triode MOSFET

In this study, an Ultra Wide Band Low Noise Amplifier (UWB LNA) with new input stage for interference rejection is presented. In this scheme, a common gate front end MOS device in triode mode is used to reject in-band and out-band interferences. Furthermore, advantage of weak inversion mode of MOS device is used. While this stage has no DC power consumption, it is possible to easily reject in band and out band interferences with 12.5 and 9.2 dB, respectively. In order to increase power gain of the circuit two stages are added as an amplifier to the circuit. Also, in order to improve the Noise Figure (NF) and bandwidth of the circuit, the advantages of thermal noise cancellation technique in the second stage and the series-peaking method in the output buffer are used. The circuit is design in 0.18 μm technology. Simulation results show peak gain of 17.6 dB in the low band (3.1-4.75 GHz) and 15.6 dB in the high band (6.1-10.6 GHz). Minimum NF in mentioned frequency band is 3 and 2.3 dB, respectively. Hence, this circuit rejects in band and out band interferences 15.6 and 11.5 dB, respectively, while UWB LNA consumes 16 mW DC power from 1.8 V. The s11 is less than -9.6 dB over entire bandwidth since worst value of IIP3 over entire bandwidth is -14 dBm which occurs at 10.6 GHz.

A Low Power Broadband Differential Low Noise Amplifier Employing Noise and IM3 Distortion Cancellation for Mobile Broadcast Receivers

A CMOS broadband differential low noise amplifier (LNA) employing noise and third order intermodulation (IM3) distortion cancellation has been designed using a 0.13 μm CMOS process for mobile TV tuners. By combining a common gate amplifier with a common source amplifier through a current mirror, a high gain due to the additional current amplification and a low noise figure (NF) due to the thermal noise cancellation can be achieved with low power consumption without degrading the input matching. To improve the linearity with low power consumption, a multiple gated transistor technique for canceling the IM3 distortion is adopted. The proposed LNA has a maximum gain of 14.5 dB, an averaged NF of 3.6 dB, an IIP3 of 3 dBm, an IIP2 of 38 dBm, and an |Sn <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sub> | lower than -9 dB in a frequency range from 72 to 850 MHz. The power consumption is 9.6 mW at a 1.2 V supply voltage and the chip area is 0.08 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .

Design of an ESD-Protected Ultra-Wideband LNA in Nanoscale CMOS for Full-Band Mobile TV Tuners

This paper presents an electrostatic discharge (ESD)-protected ultra-wideband (UWB) low-noise amplifier (LNA) for full-band (170-to-1700 MHz) mobile TV tuners. It features a PMOS-based open-source input structure to optimize the I/O swings under a mixed-voltage ESD protection while offering an inductorless broadband input impedance match. The amplification core exploiting double current reuse and single-stage thermal-noise cancellation enhances the gain and noise performances with high power efficiency. Optimized in a 90-nm 1.2/2.5-V CMOS process with practical issues taken into account, the LNA using a constant-gm bias circuit achieves competitive and robust performances over process, voltage and temperature variation. The simulated voltage gain is 20.6 dB, noise figure is 2.4 to 2.7 dB, and IIP3 is +10.8 dBm . The power consumption is 9.6 mW at 1.2 V. |S11| < -10 dB is achieved up to 1.9 GHz without needing any external resonant network. Human Body Model ESD zapping tests of plusmn4 kV at the input pins cause no failure of any device.

Thermal noise cancellation in symmetric magnetoelectric bimorph laminates

We have found a symmetric Terfenol-D/Pb(Zr,Ti)03 (PZT) bimorph magnetoelectric (ME) laminate, which operates in a bending mode under an unsymmetrical (U-shaped) magnetic bias. It has a giant ME voltage coefficient of about 70V∕cmOe at resonance. Unlike other symmetric ME laminate structures, the symmetric bimorph structure has the capability to reject thermal noise from a magnetic signal, due to its back-to-back structure. The mechanism for the thermal noise cancellation capability is that the laminate operates in a bending mode (out charges of reverse sign), whereas the thermal noise is contained in a longitudinal mode (out charges have the same sign, allowing cancellation by differential detection).

Analysis of thermal noise spike cancellation

Thermally induced voltage pulses have been reported by Gorter et al. in the output of magneto-resistive reading heads. To reduce this thermal noise, Gorter et al. added a second magnetoresistive element on the same substrate but with a large head-to-tape distance. The outputs of these two stripes are differentially amplified to reject common mode noise. A theoretical analysis is made of the heat flow in magnetoresistive heads due to frictional heat generated at the head/tape interface. This model predicts that the dual stripe geometry will be effective for thermal noise cancellation only for low tape velocity or low thermal noise frequency and/or high thermal diffusivity substrate/cover material for the magnetoresistive elements. This result is also expected to be qualitatively valid for thermal noise due to intermittent cooling by the tape of Joule heat generated in the magneto-resistive elements.