Thermal Annealing Temperature Research Articles

ПЕРЕХІДНИЙ ШАР І ЛАТЕРАЛЬНА ФОТОЕРС В НАПІВПРОВІДНИКОВІЙ ГЕТЕРОСИСТЕМІ

A photo-emf in the NbN–GaAs Schottky contact samples studied. This photo-emf is generated along the metalsemiconductor interface. It is shown that a semiconductor transition layer formed near the Schottky contact interface has a pronounced effect on the form of spectral characteristics. The feature of the photoemf spectral characteristics is a variations its appearance when changing the thermal annealing temperature of the studied heterosystems. If the spectral characteristic has one maximum and amplitude, which several times exceeds the amplitude of a significant characteristic, which means the formation of a transition layer in the Schottky contact depletion area with high conductivity, compared with a quasine-neutral region of a semiconductor. A complicated alternating form of spectral characteristics of the photo-emf is related to contributions to the measured signal from several components that are generated at potential barriers of the metalsemiconductor heterosystem. Illumination of samples on the metal side results in change of the form of spectral characteristics and reversal of sign of photo-emf. This is caused by variation of interrelation between the photo-emf components that are generated in the heterosystem layers with different conductivities. For the samples annealed at Т = 900 С, the photo-emf changes its sign near the GaAs absorption edge. It was found that thermal annealing at Т = 950 С results in increase of relative nonuniformity of the depletion region thickness, while the sign of the photo-emf spectral curve does not change. In this case, considerable effect of band bending nonuniformity in the depletion region of the heterosystem under investigation on the character of lateral photo-emf distribution is retained.

Surface morphology evolution of C-plane sapphire during multi-step thermal annealing

The surface morphology evolution of the C-plane (0001) sapphire surface with the 4° miscut angle towards A-plane is thermally annealed at temperatures of 1100 °C and 1200 °C for different dwell times varying between 3-12 hours in multiple steps, resulting in a total of 30 hours. Atomic Force Microscopy (AFM) observations are used to systematically study the effects of the thermal annealing process, temperature, and time on the evolution of the periodicity and step height of structures. The step-terrace structures with straight step-edges along the direction were observed over the entire surface after 3 hours of annealing at 1100 °C. The step-terrace structure morphology evolves through the step-bunching and facet coarsening mechanisms during the multi-step thermal annealing process. Step-bunching begins with the formation of contact points between the adjacent steps by diffusion of atoms. Its onset is associated with a threshold value of the periodicity of step-terrace structures. By varying the annealing temperature during the multi-step thermal annealing process, the evolution of step-terrace structures can be manipulated by delaying the process of step-bunching.

Effects of transition metal dopants (Mo and W) on electrical and optical properties of CdO thin films

Cadmium oxide (CdO) is known to have the highest electron mobility among common transparent conductive oxides (TCOs). Here, we carried out a systematic investigation on the properties of CdO films doped with transition metal donors, namely Mo (CMO) and W (CWO) which have been reported to enhance the mobility in In2O3. We find that the electron concentration N in as-grown CMO and CWO increases with dopant concentration to> 1021 cm−3. While the mobility μ increases with rapid thermal annealing (RTA) temperature, N decreases when the temperature is> 400 °C, suggesting that Mo and W are unstable donors. The stronger affinity of the Mo and W to diffuse out in an O2 environment results in an even stronger decrease in N when annealed in O2. Isothermal RTA at 300 °C further reveals that H interstitial donors incorporated during room temperature film growth are unstable at temperature< 300 °C. Overall, both CMO and CWO can achieve a low resistivity of ∼1.5 × 10−4 Ω-cm with μ > 100 cm2/V-s and N∼3.5 × 1020 and 4 × 1020 cm–3, respectively, as well as an overall transmittance> 80% up to λ > 1600 nm with x ≲ 0.01 after RTA at 600 °C in N2. Finally, changes in optical absorption edges Eopt of CMO and CWO are consistent with the modification of the conduction band (CB) due to anticrossing interactions of the dopant d–states with the CdO CB, which also flattens the CB dispersion which dramatically lowers the μ at high x.

Effects of rapid thermal annealing temperature on NO2 gas sensing properties of p-type mixed phase tin oxide thin films

Effects of the rapid thermal annealing (RTA) temperature on the NO2 gas sensing properties of p-type SnOX thin films were investigated. The SnOX thin films were deposited using radio-frequency magnetron sputtering and subjected to RTA at 200 °C, 250 °C, and 300 °C. The deposited SnOX thin films contained both p-type SnO and n-type SnO2 components, but the SnO was the dominant phase. The amount of SnO2 components increased with increasing RTA temperature, but the highest amount of oxygen vacancy (OVac) states was observed in the SnOX thin film annealed at 250 °C. The surface roughness of the SnOX thin film decreased as the RTA temperature increased. The SnOX thin film subjected to RTA at 250 °C exhibited a significantly higher maximum sensing response to NO2 (4.25–10 ppm NO2 at 60 °C) than those of the films treated at 200 °C (1.13) or 300 °C (0.92). The higher response was attributed to the larger amount of SnO2 and OVac in the thin film and large number of defects and cracks on the film surface. The experimental results demonstrated that the post-deposition RTA temperature considerably affects the NO2 sensing properties of the p-type SnOX-based gas sensors.

Boosting the piezoelectric property of relaxor ferroelectric single crystal via active manipulation of defect dipole polarization

To further enhance the property of piezoelectric materials is of great significance to improve the overall performance of electro-mechanical devices. Here in this work, we propose a thermal annealing and high temperature poling approach to achieve significantly enhanced piezoelectricity in Pb(In1/2Nb1/2)O3Pb(Mg1/3Nb2/3)O3PbTiO3 (PIN-PMN-PT) crystals with a morphotropic phase boundary (MPB) composition. The main idea of our approach is to realize a more sufficiently polarized crystal via active manipulation of defects and orientation of defect polarization. Manipulation of defect dipoles by the high temperature poling is proved by the piezo-response force microscopy. Finally, a d33 of 3 300 pC/N and a SE of 0.25% are obtained, nearly 60% higher than that of conventionally poled crystals. Moreover, such a boosting of piezoelectric property is obtained under a maintained Curie temperature. Our research not only reveals the active control of defect dipole via modified poling method in the PIN-PMN-PT crystal, but also provides a feasible strategy to further improve the property of piezoelectric materials.

Lithography-free fabrication and optical characterizations of nanotextured nickel dewetting thin film for broadband absorbers

Plasmonic structures based on metamaterials are widely studied and have been extensively researched in various applications. However, the fabrication of regular nanostructures always requires expensive equipment and a strict working environment, lacking the ability for large-scale fabrication. In this study, we propose and demonstrate simple nanotextured nickel (Ni) dewetting thin films on silicon (Si) and quartz substrates by using different thermal annealing temperatures. They achieve a broadband absorption range with near zero reflectivity due to the standing-wave resonances of surface plasmon polariton, and the resonance is relative to the material of the substrate. The topographies of the nanotextured Ni dewetting thin films vary with thermal annealing temperatures at different dewetting stages. The corresponding reflection and absorption resonant wavelengths of the devices are redshifted by increasing the thermal annealing temperatures. The main absorption resonances are at wavelengths of 610 nm, 580 nm, 625 nm, and 660 nm on the Si substrate. While the reflectivity of the sample around the visible range is lower than 40%, it is suitable for broadband absorption for green and yellow spectra. Moreover, the resonant wavelengths are blueshifted by increasing the incident angles. The demonstrated devices are also sensitive to the ambient media. The reflection resonant wavelengths are redshifted by increasing the environmental refraction indexes. The corresponding reflected colors are changed from green to yellow . These devices exhibit a highest sensitivity of 500 nm RIU−1 and can be used for color sensors. This proposed approach has large-scale fabrication capacity and provides promising applications for broadband absorbers, reflective displays, environmental sensors, and other optoelectronic fields.

Large remnant polarization and great reliability characteristics in W/HZO/W ferroelectric capacitors

In this work, the effect of rapid thermal annealing (RTA) temperature on the ferroelectric polarization in zirconium-doped hafnium oxide (HZO) was studied. To maximize remnant polarization (2Pr), in-plane tensile stress was induced by tungsten electrodes under optimal RTA temperatures. We observed an increase in 2Pr with RTA temperature, likely due to an increased proportion of the polar ferroelectric phase in HZO. The HZO capacitors annealed at 400°C did not exhibit any ferroelectric behavior, whereas the HZO capacitors annealed at 800°C became highly leaky and shorted for voltages above 1 V. On the other hand, annealing at 700 °C produced HZO capacitors with a record-high 2Pr of ∼ 64 μC cm−2 at a relatively high frequency of 111 kHz. These ferroelectric capacitors have also demonstrated impressive endurance and retention characteristics, which will greatly benefit neuromorphic computing applications.

Effects of etching process and annealing temperature on the ferroelectric properties of atomic layer deposited Al-doped HfO2 thin film

An investigation was conducted with regard to the effect of etching process on the ferroelectric (FE) characteristics of different device structures with Al-doped HfO2 thin films; further, the effect of the rapid thermal annealing temperature on the FE properties was elucidated using metal-ferroelectric-metal (MFM) capacitors using TiN electrodes with varying thickness and 4 at.% Al-doped HfO2 FE layer. The capacitors were annealed at different temperatures after lithography and etching process; this was aimed at incorporating the FE-orthorhombic phase. The samples annealed after patterning were able to obtain improved FE characteristics due to the amount of tensile stress. The MFM devices that were initially patterned were also studied as a reference. We found that even though it required higher temperature and shorter time to introduce the FE phase, it exhibited more stable as well as promising FE properties and electrical performances with a relatively large remnant polarization (2P r ∼ 60 μC cm−2), a coercive electric field of approximately 2 MV cm−1 and high switching current density with less leakage. Our results indicate how the FE properties of the HfO2-based thin films can be engineered through suitable process sequence and post-annealing conditions, thereby verifying the applicable flexibility of FE-HfO2 for semiconductor device integration.

Enhancing the sensing behavior of a reduced graphene magnetite-based plasmonic optical fiber sensor.

The D-shaped optical fiber is a base for the magnetite-based graphene nanocomposite (rGO/Fe3O4) for a Pb heavy metal sensing layer. The designed sensor was studied under the effects of rapid annealing, water circulation, and plasmonic tuning. Various annealing temperatures (100°C, 200°C, 300°C, and 400°C) were investigated. The effect of rapid thermal annealing (RTA) temperature on the transmission results were found at a short wavelength of 300 nm and a minimum point of ∼380nm. The bandgap energy was verified between 2.3 and 3.17 eV for 100°C and 400°C, respectively. The sensor results show modification toward a short wavelength by increasing the rapid annealing temperature. Compared with furnace methods, the transmittance shift of the plasmonic effect showed the best performance under the influence of RTA. RTA at 300°C and 400°C offered an acceptable degree of stability at the beginning (1-50 min). The best performance of the proposed sensor was improved by introducing a circulating liquid chamber into the initial design. The resonance shifts due to Pb ion concentration (5, 10, and 15 ppm) were studied for transmission and wavelength shifts. The sensor shift was enhanced by using a free space polarizer controller attached to the second design. The results give detection and sensing potential in the visible range at a possible remarkable response time. The figure of merit was 62.5 a.u., and the maximum sensitivity was 1 a.u./ppm by using a polarizer controller. This article presents the optical characterizations of plasmonic sensor-based rGO/Fe3O4 for detecting Pb ions and enhancing the resonance shift. RTA for composite material and water circulation associated with D-shaped optical fiber enhances response time and stability designed using a polarizer controller.

Probing the Density of States of Organic and Perovskite Semiconductors By Energy-Resolved Electrochemical Impedance Spectroscopy

The performance of thin-film photovoltaic cells is closely related to the energy alignment of the absorber layers and charge collection layers used for constructing the device and is further influenced by the presence of energetic disorder and defects in the photoactive material. This especially holds for novel organic and perovskite semiconductors, where film processing conditions, such as solvents used, thermal or solvent vapor annealing, and aging of the active materials are known to have an influence on the device performance. Knowledge about the energy of the relevant frontier orbitals such as HOMO and LUMO for organic semiconductors,[1]and valence (VB) and conduction (CB) bands for perovskites is key to designing more efficient materials. In addition, the energetic disorder, such as broadening of the band edges and states that appear in the bandgap are strongly affecting solar cell efficiencies. Knowledge about the density of states close to and inside the bandgap is very relevant in this respect.In this work energy-resolved electrochemical impedance spectroscopy (ER-EIS) as advanced by Nádazdyet al.[2]is applied on various organic bulk-heterojunction and lead-halide perovskite semiconductors to map their energy landscape around and in the band gap. ER-EIS provides a direct electrochemical measurement of the HOMO/VB and LUMO/CB energies, but also resolves band tails and sub-bandgap states with a resolution of up to six orders of magnitude. This enables detection of subtle but important effects that are the consequence of layer processing conditions such as spin coat parameters, solvent combinations, thermal annealing time and temperature, and atmospheric exposure (vacuum, inert, air).We will present experiments that aim to quantify relative changes in the energy landscape due to varying processing conditions and assign physical meaning to these changes (e.g. morphology and (un)intentional doping). The systems under investigation are well-known donor-acceptor bulk-heterojunction (e.g., P3HT:PCBM and PM6:Y6) and triple-cation mixed-halide perovskites (CsFAMA). The results shed new light on largely unknown defect states in the bandgap of solution-processed semiconductors.[1] R. E. M. Willems, C. H. L. Weijtens, X. de Vries, R. Coehoorn, and R. A. J. Janssen, Relating frontier orbital energies from voltammetry and photoelectron spectroscopy to the open-circuit voltage of organic solar cells, Adv. Energy Mater. 2019, 9, 1803677.[2] V. Nádazdy, F. Schauer, and K. Gmucová, Energy resolved electrochemical impedance spectroscopy for electronic structure mapping in organic semiconductors, Appl. Phys. Lett. 2014, 105, 142109.

Zirconium oxide film deposition properties to build transparent electronic devices in conjunction with tin dioxide

ZrO2 thin films are deposited by the sol–gel dip-coating technique where the thermal annealing temperature and the number of deposited layers determine the properties of this material concerning the application in field-effect transistor (FET) devices in conjunction with SnO2 layer, also produced by sol–gel dip-coating. The best annealing temperature for the ZrO2 film was found as 400°C, along with a small number of layers and the position of the layer inside the oven, which determines the dominant heat transport mechanism of conduction or convection phenomena. The electrical insulating property of ZrO2 layers was confirmed with the current in the order of pA, even for layers about 100 nm thick. The temperature of 400°C also leads to a lower leak current through the gate in the device, which is three orders of magnitude lower than the source-drain current (in the order of a tenth of [Formula: see text]A).

Thermal Annealing Effects of V2O5 Thin Film as an Ionic Storage Layer for Electrochromic Application.

A vanadium pentoxide (V2O5) thin film with thermal annealing as an ionic storage layer for electrochromic devices is presented in our study. The V2O5 thin film was deposited on an ITO glass substrate by an RF magnetron sputtering. The electrochromic properties of the film were evaluated after various thermal annealing temperatures. The structural analysis of the film was observed by X-ray diffraction (XRD), field emission electron microscopy (FE-SEM), and atomic force microscopy (AFM). The structure of the V2O5 thin film transformed from an amorphous to polycrystalline structure with directions of (110) and (020) after 400 °C thermal annealing. The electrochromic properties of the film improved compared with the unannealed V2O5 thin film. We obtained a charge capacity of 97.9 mC/cm2 with a transparent difference ΔT value of 31% and coloration efficiency of 6.3 cm2/C after 400 °C thermal annealing. The improvement was due to the polycrystalline orthorhombic structure formation of V2O5 film by the rearrangement of atoms from thermal energy. Its laminate structure facilitates Li+ ion intercalation and increases charge capacity and transparent difference.

Influence of Thermal Annealing Temperatures on Powder Mould Effectiveness to Avoid Deformations in ABS and PLA 3D-Printed Parts.

Fused deposition modelling (FDM)-printed parts can be treated with various post-processes to improve their mechanical properties, dimensional accuracy and surface finish. Samples of polylactic acid (PLA) and acrylonitrile butadiene styrene (ABS) parts are treated with annealing to study a ceramic powder mould’s effectiveness in order to avoid dimensional part deformation. The variables chosen are annealing temperatures and the usage of a ceramic powder mould to avoid part deformations. A flexural strength test was carried out to evaluate the mould’s influence on the mechanical properties of the part. The effectiveness of the mould has been evaluated mainly attending to the length of the part, because this is the dimension most affected by deformation. A polynomial approximation to a deformation’s length and the effectiveness of the mould allows for their prediction. Results obtained show that effectiveness increases with the annealing temperature. Nevertheless, mould effectiveness decreases when parts are fabricated with PLA, because it is a semi-crystalline thermoplastic, and it suffers a lower shrinkage during thermal post-process than amorphous polymers such as ABS. Attending to the flexural strength test, mould has no significant influence on the mechanical properties of the treated parts in both materials studied.

Tuning intrinsic defects in ZnO films by controlling the vacuum annealing temperature: an experimental and theoretical approach

The control of native defects in the ZnO material is strongly important for a wide range of technological applications. In this paper, native defects are tuned via the post-thermal treatment of ZnO films in a high vacuum atmosphere. The microstructure of the as-grown ZnO film shows columnar growth and strongly polar-oriented grains along the c-plane (002). Also, the obtained results indicate that the as-grown film contains a high amount of intrinsic defects and strong lattice distortions. After the thermal annealing, the ZnO films display significant structural changes, which are reflected in their electrical, vibrational, and optical properties. Our findings suggest that these changes were attributed to the selective cleanup effect of the native defects and the partial deoxidation process mainly on the exposed particle surface (at high temperatures) tuned up by the thermal annealing temperature. According to DFT calculations, oxygen vacancies (V O ) show lower energy, followed by zinc vacancies (V Zn ) and oxygen interstitials (O i ) indicating that V O defect is the most stable in ZnO. That sequence of stability could suggest the sequence of the annihilation of those defects, which is in line with our experimental findings and also in agreement with literature results.

EFFECT OF RAPID THERMAL ANNEALING TEMPERATURE ON THE ELECTROPHYSICAL PROPERTIES OF THE OHMIC CONTACT OF Ti/Al /Ni METALLIZATION TO THE GaN/AlGaN HETEROSTRUCTURE

Effect of rapid thermal annealing temperature on the electrophysical properties of the ohmic contact of Ti/Al/Ni metallization with layer thicknesses of 20/120/40 nm to the GaN/AlGaN heterostructure with a two-dimensional electron gas on a sapphire substrate has been discovered by transmission line measurement and secondary ion mass spectroscopy methods. Rapid thermal annealing of the samples was carried out in a nitrogen atmosphere at the temperature ranging from 850 to 900 °C for 60 s. It has been discovered that a high-resistance heterostructure layer with a thickness of about 25 nm is located on the initial samples between metallization and the two-dimensional electron gas, which prevents the formation of ohmic contact. After rapid thermal annealing at the temperature of less than 862,5 °C, the metallization components interact with each other and with the heterostructure, which leads to the decrease in the thickness of the high-resistance heterostructure layer to 15–20 nm and to the nonlinearity of the I – V characteristic. At rapid thermal annealing temperatures in the range from 862,5 to 875 °C, the thickness of the high-resistance heterostructure layer decreases to several nanometers due to the interaction of Ti/Al/Ni metallization components with the heterostructure, which promotes the tunneling effect of charge carriers and formation of a high-quality ohmic contact with a resistivity of about 1⸱10 –4 Ohm∙cm 2 . With an increase of the rapid thermal annealing temperature over 875 °C, the interaction of the metallization and heterostructure components occurs throughout the entire depth, the two-dimensional electron gas degrades, and the I – V characteristic of the contact becomes nonlinear. The results obtained can be used in the technology for creating GaN-based products with a two-dimensional electron gas.

The Lattice Distortion-Induced Ferromagnetism in the Chemical-Bonded MoSe2/WSe2 at Room Temperature

Ferromagnetism to non-ferromagnetism transition is detected in a chemically bonded MoSe_{2}/WSe_{2} powder with different thermal annealing temperatures. All samples exhibit ferromagnetism and Raman redshift, except for the 1100 °C thermally annealed sample in which the MoSe_{2} and WSe_{2} are thermally dissociated and geometrically separated. The element analysis reveals no significant element ratio difference and detectable magnetic elements in all samples. These results support that, in contrast to the widely reported structure defect or transition element dopant, the observed ferromagnetism originates from the structure distortion due to the chemical bonding at the interface between MoSe_{2} and WSe_{2}.

Back contact modification in Sb2Se3 solar cells: The effect of a thin layer of MoSe2

The record efficiency reported for Sb2Se3 solar cells is 9.2% and different lines of work have been opened with the aim of overcoming the factors that limit this value. Between them, the back contact is one of the aspects that must be considered to improve the efficiency of solar cells. In this work, the effect of forming an intermediate layer between the back contact of Mo and the Sb2Se3 absorber is studied and its impact on the properties of solar cells processed in substrate configuration: glass/Mo/Sb2Se3/CdS/i-ZnO/ITO, is evaluated. For the study, a series of photovoltaic devices were processed in which selenization processes were carried out in the molybdenum contact under different thermal annealing temperatures in the range of 320 to 400°C to produce the MoSe2 compound. The influence of these thermal processes based on Sb2Se3 structural properties and the electro-optical properties of solar cells was evaluated. The results revealed that by the introduction of MoSe2, through the selenization of the Mo, the electrical properties of the solar cells are improved, with the best efficiency solar cell of 5.0%. According to our analysis, it is considered that the optimization of the electrical parameters is a consequence of the behavior of MoSe2 as a hole transport layer, giving rise to a n-i-p structure whose internal electrical field is found further within the absorber, which makes the carrier separation process more efficient and prevents recombination. On the other hand, to evaluate the thickness of the MoSe2 layer and determine the physical processes that limit the efficiency of the devices, a simulation process was carried out based on the experimental results.

Strong enhancement of red photoluminescence from Eu doped Ga2O3 films by thermal annealing

Eu doped Ga2O3 thin films were prepared by pulsed laser deposition on sapphire substrates. The influences of thermal annealing temperature as well as the annealing ambient on the optical and structural properties of Ga2O3:Eu were investigated by means of photoluminescence (PL), X-ray diffraction, and Raman measurements. The PL spectra reveal that the thermal annealing treatment in an oxygen ambient at 600 °C results in a remarkable 10-fold enhancement in the Eu-related red luminescence by contrast to the as-grown Ga2O3:Eu sample. The comparison of PL spectra for films annealed under different ambient confirms that the strong enhancement in the Eu-related luminescence is correlated with the oxygen, which can greatly reduce the defects and suppress the nonradiative recombination paths. Moreover, Ga2O3:Eu films with higher Eu concentrations exhibit stronger PL enhancement compared to the samples with lower Eu doping levels, providing an effective method to suppress the concentration quenching effect. We anticipate that this study paves the way towards highly efficient red light-emitting devices based on Ga2O3:Eu films.

Raman scattering studies of the ambient atmospheric thermal stability of Be in periodic Be/Mo and Be/W multilayer mirrors

The ambient atmospheric thermal stability of beryllium (Be) layers in Be/Mo and Be/W multilayer mirrors was investigated by Raman scattering. The physical characteristic of the transverse optical (TO) mode was considered for structural analysis of the Be layers in the multilayers. With an increase in thermal annealing temperature, two important modifications of this mode were noticed: the TO mode of Be was found to shift to a lower frequency and the peak width became wider. These two facts are related to the deterioration of the crystalline quality of the Be layers upon thermal annealing. The TO mode of the crystalline Be phase completely vanished and high-intensity peaks at the shoulder were detected for the Be/Mo multilayer thermally annealed at 723 K. This evidence is associated with the transformation of polycrystalline into an oxidized amorphous Be phase. In this case, the diffusion of oxygen to the inner period and the destruction of the modulation of the periodic structure of the multilayer was investigated by a secondary ion mass spectrometer. However, the TO mode of Be embedded within W in Be/W multilayers was stable in similar annealing conditions, which revealed the thermal stability.

Scalable Flexible Perovskite Solar Cells Based on a Crystalline and Printable Template with Intelligent Temperature Sensitivity

The control of crystallization and printability of large‐area perovskite layers is crucial to facilitating their commercial development in flexible electronics. Considering the benefits of the liquid crystals with intelligent temperature sensitivity for the printable and crystalline template of a scalable perovskite film, a liquid crystal 4((6(acryloyloxy)hexyl)oxy)benzoic acid (6OBA) is introduced. The 6OBA shows a liquid crystal temperature range matching with the thermal annealing temperature of perovskite films. A desire printability of perovskite inks for scalable and homogeneous devices is guaranteed due to the fluidity of the 6OBA additive at room temperature. Moreover, the crystalline 6OBA promotes crystallization of perovskite films during the thermal annealing process, which can also release the residual stress of the whole layer. The optimized perovskite solar cells (PSCs) with 6OBA exhibit superior power conversion efficiency values of 19.87% for flexible devices (1.01 cm2) and 14.74% for flexible modules (25 cm2). The unencapsulated devices can maintain &gt;90% of their original efficiency after 1500 h in the ambient atmosphere. Furthermore, the flexible PSCs exhibit outstanding bending resistance, retaining over 88% of their initial efficiency after 1000 bending cycles at a radius of 3 mm. This work provides a facile strategy for accelerating the development of flexible electronics.