Temperature-dependent Transport Research Articles

Hydrodynamic theory of premixed flames propagating in closed vessels: flame speed and Markstein lengths

A hydrodynamic theory of premixed flame propagation within closed vessels is developed assuming the flame is much thinner than all other fluid dynamic lengths. In this limit, the flame is confined to a surface separating the unburned mixture from burned combustion products, and propagates at a speed determined from the analysis of its internal structure. Unlike freely propagating flames that propagate under nearly isobaric conditions, combustion in a closed vessel results in continuous increases in pressure, burning rate and flame temperature, and a progressive decrease in flame thickness. The flame speed is shown to depend on the voluminal stretch rate, which measures the deformation of a volume element of the flame zone, and on the rate of pressure rise. Both effects are modulated by pressure-dependent Markstein numbers that depend on heat release and mixture properties while capturing the effects of temperature-dependent transport and stoichiometry. The model applies to flames of arbitrary shape propagating in general flows, laminar or turbulent, within vessels of general configurations. The main limitation of hydrodynamic flame theories is the assumption that variations inside the flame zone due to chemistry or turbulence, which could potentially alter its internal structure, are physically unresolved. Nonetheless, the theory, deduced from physical first principles, identifies the various mechanisms involved in the combustion process as demonstrated in detailed discussions of planar flames propagating in rectangular channels and spherically expanding flames in spherical vessels. It also enables the construction of instructive models to numerically simulate the evolution of multi-dimensional and corrugated flames under confinement.

Analysis of the high-temperature transport property in GaN-based single and double heterostructures

GaN-based heterostructures have been proved to be excellent candidates for high-voltage, large-power, high-frequency and high-temperature application fields, thanks to their superior material properties. To further improve the carriers’ confinement, using InGaN channel layer or introducing AlGaN back barrier layer is promoted. These structures are also proved to be favorable for the robust electron mobility at high temperature. However, the reason solely rests on the longitudinal optical (LO) phonon scattering and the behind mechanism is still absent. This work compares the temperature-dependent electronic transport properties in three groups of GaN-based heterostructures, including GaN-based single heterostructure (SH) with/without AlN interlayer, GaN-based SH and double heterostructure (DH), and GaN-based DH with AlGaN or GaN channel layer. The advantageous high-temperature mobility is attributed to the enhanced LO phonon energy in heterostructures. By self-consistent calculations of the Schrödinger–Poisson equations, a close relation between the narrow electron distribution in the quantum well with the high LO phonon energy, and consequently superior mobility at high temperature is implied. The results provide a simple strategy for the optimized design of the GaN-based heterostructures outperforming at high temperature.

First Principle Study of Electronic, Optoelectronic, and Thermoelectric Properties of Zintl Phase Alloys BaAg2X2 (X = S, Se, Te) for Renewable Energy

Novel Zintl phases exhibiting promising thermoelectric properties have garnered considerable traction, largely attributed to the accuracy of computational estimates. In the present investigation, the density functional theory-based WIEN2k code is employed to analyze the structural, optoelectronic, and transport behavior of the BaAg2X2 (X = S, Se, Te) Zintl phase. All these compositions belong to the stable trigonal phase with nominal expansion in the unit cell with the replacement of S with Se and Te. A negative value of enthalpy of formation of -2.30, -2.0, and -1.80 for BaAg2S2, BaAg2Se2, and BaAg2Te2, respectively, assures their thermodynamic stability. These compositions demonstrate dynamic stability, as evidenced by the nonexistence of negative (-ve) frequency values in their phonon spectra. Increasing the size of chalcogens enhances the spin-orbit coupling and reduces the bandgap value from 2.10 - 1.55 eV. The examination of optical response suggests that studied compositions display high absorption and low energy loss in the visible range, rendering them suitable for optoelectronic devices. The temperature-dependent transport behavior is computed using BoltzTrap code, and the RT value of power factor is recorded as 0.89 × 1011, 0.65 × 1011, and 0.54 × 1011 Wm− 1K− 2 for BaAg2X2 (X = S, Se, Te). A high power factor value at elevated temperatures indicates the promising efficacy of studied compositions in thermoelectric device applications.

Evaluation of 2D Tantalum Carbide MXene for Room to Mid‐temperature Thermoelectric Applications

AbstractTantalum carbide MXene (Ta4C3Tx) were synthesized via HF etching of the Al intermediate layer from the parental tantalum aluminium carbide MAX phase (Ta4AlC3). The structural and vibrational studies confirm the formation of MXene from the MAX phase without disturbing the hexagonal crystal structure. The synthesized samples were analysed using XRD to understand the phase structure. In and out of plane vibrational properties were examined by Raman spectrometer. XPS confirms the successful HF etching of Al in MXene phase and all other elemental configurations. HR‐SEM and HR‐TEM revile the exfoliated layered structure of the MXene and hexagon diffraction pattern of the tantalum carbide MXene sample with increased d‐spacing. The TGA analysis demonstrated the thermal stability of the as‐synthesized post measured compounds. The synthesized tantalum carbide MXene shows stable thermoelectric properties over six thermal cycles. The temperature dependent transport properties were measured from 303 K to 803 K. Ta4C3Tx MXene shows a maximum Seebeck coefficient of 13.8 μV/K and a power factor of 1.88 μW/mK2 with the low lattice thermal conductivity of 5.42 W/mK at 803 K. In this present investigation, Tantalum carbide MXene demonstrated a decent thermoelectric property with high thermal cycling stability.

Structure and properties of mixed valent CeFe2Al8

Temperature dependent magnetic, electrical transport and thermal properties of polycrystalline orthorhombic CeFe2Al8intermetallic compound have been studied along with its isostructural La counterpart, LaFe2Al8. For the cerium compound, low fielddcmagnetization exhibits an antiferromagnetic like ordering (TN) ∼ 4 K. The main feature of the magnetic susceptibility plot is a broad hump spanning a large temperature range, indicating mixed valence of Ce in the compound, in good agreement with reported literature. However, contrary to the reported observations we find that the mixed valence state is very robust and was evident even up to very high magnetic fields (> 2 T). Further, in this work we report 3d core level photoemission spectra of cerium in CeFe2Al8, to understand the valence state of cerium ions in this system. Additionally, from resistivity measurements it is found that, CeFe2Al8is metallic with no indication of any anomaly, till the lowest temperature of measurement. Specific heat measurements show very low value of heat capacity and electronic contribution. The isostructural La analogue, LaFe2Al8compound shows broadness in susceptibility with maxima around 44 K which may be attributed to ordering of Fe moments. The comparison of Ce and La compounds brings out the role of Fe magnetic moments which may be responsible for competing with cerium moments and resulting in the dilution of long-range magnetic order, also contributing to magnetic frustration in CeFe2Al8.

Refined prediction of thermal transport performance in amorphous silica

Thermal transport in amorphous silica (a-SiO2) and silica aerogel is critically important for thermal protection and microelectronics applications. However, notable disparities exist between the predicted and measured thermal conductivity of a-SiO2. Inspired by the dual-phonon theory proposed by Luo et al. [Nat. Commun. 2020, 11, 2554] for crystalline materials, this work introduces a dual-diffuson transport method for amorphous materials. The criterion based on the thermal diffusivity is employed to differentiate between normal diffusons and phonon-like diffusons. Herein, the thermal conductivity of a-SiO2 is investigated by combining a modified Allen-Feldman (AF) theory with the dual-diffuson transport method. The present method is validated well by the measurement using the transient plane source (TPS) method. In addition, the results indicate that normal diffusons primarily govern the thermal transport in a-SiO2, with only a minor contribution from phonon-like diffusons. The temperature dependence of specific heat capacity and mode linewidth contributes to the positive temperature-dependent thermal conductivity. The quantum effect of specific heat capacity is the primary influencing factor in the temperature range of 100–1000 K, while the mode linewidth becomes dominant at higher temperatures. Finally, a theoretical framework for predicting the solid thermal conductivity of silica aerogel is introduced by including the temperature effect on the inherent thermophysical properties of the backbone. This work uncovers the physical mechanisms underlying temperature-dependent thermal transport in a-SiO2 and silica aerogels.

Electrical properties of completely compensated single-crystal Ge-on-GaAs films with two-dimension Coulomb disorder

We present electrical properties of heavily doped and completely compensated Ge films grown on semiinsulating GaAs(100) substrates by vacuum evaporation. The thin (∼100 nm) Ge films are single-crystal and characterized using temperature-dependent transport measurements, with anomalously large activation energy up to half the Ge bandgap, anisotropy of the transverse magnetoresistance, high resistivity (up to 140 Ω cm), low free charge carrier mobility (∼50 cm2/V·s), and concentration (∼1014–1015 cm−3). This behaviour is attributed to a completely compensated semiconductors arising from Ga and As impurity incorporation and large-scale potential fluctuations. Analysis suggests a two-dimensional percolative transport mechanism in Ge-on-GaAs heterostructures.

Heat transfer and friction factor analysis for tomato puree flowing in a concentric-tube heat exchanger.

The heat and momentum transfer of tomato puree through a concentric-tube heat exchanger over a range of generalized Reynolds number (0.05<Re<66.5) was experimentally and numerically analyzed. Thermophysical and rheological properties of tomato puree (12°Brix) were measured from 20 to 60°C. The velocity, pressure, and temperature were calculated using the computational fluid dynamics (CFD) software FLUENTTM with temperature-dependent transport properties. The thermal operation of the concentric-tube exchanger was satisfactorily predicted using CFD, indicating accurate measurement of tomato puree properties with temperature variations. A concordance was found between the calculated Fanning friction factor and generalized Reynolds with the experimental correlation. A modified Sieder-Tate correlation was established, which allows properly expressing the Nusselt number as a function of the Peclet number. Simple correlations for the mechanical work and the heat transfer rate as a function of the volumetric flow rate were derived. The thermal efficiency was high at low puree flow rates but decreased with higher rates. However, at high flow rates, ceased its decline, instead showing a slight improvement. The analysis confirmed higher heat transfer rates in the concentric-tube heat exchanger compared to a plain tube at low puree flow rates. The results offer valuable insights for assessing diverse operational conditions in dairy, beverage, sauce, and concentrated food industries. Additionally, they also enhance the analysis and design of concentric-tube heat exchangers. PRACTICAL APPLICATION: The knowledge of the rheological and hydrodynamical behavior of fluids in concentric-tube heat exchangers allows to explore a set of different operating conditions to improve the yield and effectiveness on the system heating/cooling design.

Probing carrier transport of sphalerite Cadmium Chalcogenide (CdX, X=S, Se) from first-principles

Cadmium chalcogenide (CdX, X=S, Se) traps photons in the visible and near-infrared regions, and it has been widely used in optoelectronic devices such as solar cells and light-emitting diodes. The carrier concentration and intrinsic mobility are prerequisites for the optimized design of optoelectronic devices, while the underlying physics that determines the carrier mobility of sphalerite CdX remains elusive. Herein, we explore the temperature-dependent carrier transport properties and scattering mechanisms of sphalerite CdX from first-principles. The calculation results indicate that the isotropic electron mobility for CdS and CdSe are 180.2 cm2/Vs and 656.8 cm2/Vs at room temperature, respectively. An in-depth analysis reveals that polar optical phonon (POP) scattering is the main scattering mechanism limiting the mobility of sphalerite CdX, and electrons are mainly affected by long-range longitudinal optical phonon scattering. The lower electron mobility of CdS compared to CdSe is attributed to the larger Fröhlich coupling constant, -larger Pauling ionicity, and stronger electron-phonon interactions. As the temperature rises, the electron mobility of CdX consistently decreases due to the enhancement of POP scattering and lattice vibrations. The electron mobility of CdX at high doping concentrations decreases dramatically, attributing to the enhancement of ionized impurity scattering i.e. collisional scattering of electrons and ionized impurity ions. This work provides a systematic study of the electron transport properties of sphalerite cadmium chalcogenide from first-principles, which provides a theoretical guideline for the functional regulation and improvement of optoelectronic devices.

Temperature-dependent charge transport measurements unveil morphological insights in non-fullerene organic solar cells

The morphological analysis of bulk heterojunction (BHJ) active layer stands as a critical imperative for advancing the performance of future organic solar cells. Conventional characterization tools employed for morphological investigation often require substantial resources, both in cost and physical space, thereby imposing restraints on research endeavors in this domain. Here, we extend the application of charge carrier transport characterization beyond conventional mobility assessments, utilizing it as a table-top method for preliminary morphological screening in organic thin films. The investigation focuses on several high-performance BHJ systems that utilize typical “Y” non-fullerene acceptors. It involves in-depth transport studies, including temperature- and field-dependent transport characterizations. The resulting transport data are analyzed in detail using the Gaussian disorder model to extract key transport parameters, specifically the high-temperature limited mobility (μ∞) and positional disorder (∑). Integrating these transport parameters with morphological insights obtained through various characterization tools—including x-ray scattering, sensitive spectroscopy, and quantum chemistry simulation—provides a deep understanding of the intricate interplay between charge transport properties and morphological characteristics. The results reveal explicit relationships, associating μ∞ with the degree of molecular stacking in BHJs and ∑ with the structural disorder in molecule skeleton. Our findings point to the promising potential of utilizing a simple transport characterization technique for the early stage evaluation of thin film packing and geometric properties of organic materials.

Magnon excitation-induced spin memory loss in epitaxial L10-FePt/MgO/L10-FePt magnetic tunnel junctions

This work investigates the interplay between interfacial spin–orbit coupling (SOC) and magnon excitation-induced spin memory loss in epitaxial L10-FePt/MgO/L10-FePt magnetic tunnel junctions, which is crucial for advancing spintronic technologies. By employing systematic temperature-dependent transport measurements and inelastic electron tunneling spectroscopy, our study reveals that interfacial SOC at the Pt-terminated FePt/MgO interface significantly enhances magnon excitation during electron tunneling. This process results in a pronounced loss of spin memory in the spin-polarized current, diminishing the tunnel magnetoresistance ratio. Our findings provide critical insights into the mechanisms of spin memory loss, offering directions for optimizing spintronic device performance in the context of pronounced SOC environments.

All-2D CVD-grown semiconductor field-effect transistors with van der Waals graphene contacts

Two-dimensional (2D) semiconductors and van der Waals (vdW) heterostructures with graphene have generated enormous interest for future electronic, optoelectronic, and energy-harvesting applications. The electronic transport properties and correlations of such hybrid devices strongly depend on the quality of the materials via chemical vapor deposition (CVD) process, their interfaces and contact properties. However, detailed electronic transport and correlation properties of the 2D semiconductor field-effect transistor (FET) with vdW graphene contacts for understanding mobility limiting factors and metal-insulator transition properties are not explored. Here, we investigate electronic transport in scalable all-2D CVD-grown molybdenum disulfide (MoS2) FET with graphene contacts. The Fermi level of graphene can be readily tuned by a gate voltage to enable a nearly perfect band alignment and, hence, a reduced and tunable Schottky barrier at the contact with good field-effect channel mobility. Detailed temperature-dependent transport measurements show dominant phonon/impurity scattering as a mobility limiting mechanisms and a gate-and bias-induced metal-insulator transition in different temperature ranges, which is explained in light of the variable-range hopping transport. These studies in such scalable all-2D semiconductor heterostructure FETs will be useful for future electronic and optoelectronic devices for a broad range of applications.

Role of the coupling of the electronic transitions on the order of the metal-to-insulator phase transition in nickelates

Rare-earth nickelates (chemical formula RNiO3, R being a rare-earth cation) display a temperature-dependent metal-to-insulator transition (MIT) together with a breathing distortion of the NiO6 octahedra units at a temperature ranging from 0 to 600 K depending on the size of the R cation. Their rich phase diagram is also characterized by a paramagnetic to antiferromagnetic transition that occurs at the same temperature as the MIT for R = Pr, Nd, while it arises at lower temperatures for all the other members of the series. In this work, we have investigated the order of the MIT in a portion of the phase diagram spanning from SmNiO3 to NdNiO3 by means of temperature dependent transport measurements and resonant elastic x-ray scattering performed on high quality epitaxial SmxNd1−xNiO3 solid solution thin films. Our results show that the order of the metal-to-insulator transition does not depend on whether or not the MIT is coupled with the magnetic transition.

Revisiting thermal transport in CuInTe2: Role of temperature-dependent anharmonicity and higher-order phonon–phonon interactions

The temperature-dependent phonon thermal transport in CuInTe2 is investigated by considering lattice thermal expansion, temperature-dependent anharmonicity, higher-order phonon–phonon interactions, and phonon renormalization with input from first-principles based density functional theory calculations. Incorporating these higher-order temperature-dependent effects reveals that the thermal conductivity varies with temperature as T−1.59 consistent with experimental measurements ranging from T−1.62 to T−1.78. Using the lowest-order theory or only temperature-dependent interatomic force constants or four-phonon scattering resulted in a wrong description of thermal transport physics.

Modeling temperature-dependent transport properties in dissipative particle dynamics: A top-down coarse-graining toward realistic dynamics at the mesoscale.

Dissipative particle dynamics (DPD) is a widespread computational tool to simulate the behavior of soft matter and liquids in and out of equilibrium. Although there are many applications in which the effect of temperature is relevant, most of the DPD studies have been carried out at a fixed system temperature. Therefore, this work investigates how to incorporate the effect of system temperature variation within the DPD model to capture realistic temperature-dependent system properties. In particular, this work focuses on the relationship between temperature and transport properties, and therefore, an extended DPD model for transport properties prediction is employed. Transport properties, unlike the equilibrium properties, are often overlooked despite their significant influence on the flow dynamics of non-isothermal mesoscopic systems. Moreover, before simulating the response of the system induced by a temperature change, it is important to first estimate transport properties at a certain temperature. Thus here, the same fluid is simulated across different temperature conditions using isothermal DPD with the aim to identify a temperature-dependent parametrization methodology, capable of ensuring the correctness of both equilibrium and dynamical properties. Liquid water is used as a model system for these analyses. This work proposes a temperature-dependent form of the extended DPD model where both conservative and non-conservative interaction parameters incorporate the variation of the temperature. The predictions provided by our simulations are in excellent agreement with experimental data.

Characterization of induced quasi-two-dimensional transport in n-type InxGa1−xAs1 − yBiy bulk layer

The temperature-dependent transport properties of n-type InGaAsBi epitaxial alloys with various doping densities are investigated by conducting magnetoresistance (MR) and Hall Effect (HE) measurements. The electronic band structure of the alloys and free electron distribution were calculated using Finite Element Method (FEM). Analysis of the oscillations in the transverse (Hall) resistivity shows that quasi-two-dimensional electron gas (Q-2D) in the bulk InGaAsBi epitaxial layer (three-dimensional, 3D) forms at the sample surface under magnetic field even though there is no formation of the spacial two-dimensional electron gas (2DEG) at the interface between InGaAs and InP:Fe interlayer. The formation of Q-2D in the 3D epitaxial layer was verified by temperature and magnetic field dependence of the resistivity and carrier concentration. Analysis of Shubnikov-de Haas (SdH) oscillations in longitudinal (sample) resistivity reveals that the electron effective mass in InGaAsBi alloys are not affect by Bi incorporation into host InGaAs alloys, which verifies the validity of the Valence Band Anti-Crossing (VBAC) model. The Hall mobility of the nondegenerate samples shows the conventional 3D characteristics while that of the samples is independence of temperature for degenerated samples. The scattering mechanism of the electrons at low temperature is in long-range interaction regime. In addition, the effects of electron density on the transport parameters such as the effective mass, and Fermi level are elucidated considering bandgap nonparabolicity and VBAC interaction in InGaAsBi alloys.

Understanding the Electronic Transport of Al-Si and Al-Ge Nanojunctions by Exploiting Temperature-Dependent Bias Spectroscopy.

Understanding the electronic transport of metal-semiconductor heterojunctions is of utmost importance for a wide range of emerging nanoelectronic devices like adaptive transistors, biosensors, and quantum devices. Here, we provide a comparison and in-depth discussion of the investigated Schottky heterojunction devices based on Si and Ge nanowires contacted with pure single-crystal Al. Key for the fabrication of these devices is the selective solid-state metal-semiconductor exchange of Si and Ge nanowires into Al, delivering void-free, single-crystal Al contacts with flat Schottky junctions, distinct from the bulk counterparts. Thereof, a systematic comparison of the temperature-dependent charge carrier injection and transport in Si and Ge by means of current-bias spectroscopy is visualized by 2D colormaps. Thus, it reveals important insights into the operation mechanisms and regimes that cannot be exploited by conventional single-sweep output and transfer characteristics. Importantly, it was found that the Al-Si system shows symmetric effective Schottky barrier (SB) heights for holes and electrons, whereas the Al-Ge system reveals a highly transparent contact for holes due to Fermi level pinning close to the valence band with charge carrier injection saturation due to a thinned effective SB. Moreover, thermionic field emission limits the overall electron conduction, indicating a distinct SB for electrons.

Mechanisms of Hysteresis and Reversibility across the Voltage-Driven Perovskite-Brownmillerite Transformation in Electrolyte-Gated Ultrathin La0.5Sr0.5CoO3-δ.

Perovskite cobaltites have emerged as archetypes for electrochemical control of materials properties in electrolyte-gate devices. Voltage-driven redox cycling can be performed between fully oxygenated perovskite and oxygen-vacancy-ordered brownmillerite phases, enabling exceptional modulation of the crystal structure, electronic transport, thermal transport, magnetism, and optical properties. The vast majority of studies, however, have focused heavily on the perovskite and brownmillerite end points. In contrast, here we focus on hysteresis and reversibility across the entire perovskite ↔ brownmillerite topotactic transformation, combining gate-voltage hysteresis loops, minor hysteresis loops, quantitative operando synchrotron X-ray diffraction, and temperature-dependent (magneto)transport, on ion-gel-gated ultrathin (10-unit-cell) epitaxial La0.5Sr0.5CoO3-δ films. Gate-voltage hysteresis loops combined with operando diffraction reveal a wealth of new mechanistic findings, including asymmetric redox kinetics due to differing oxygen diffusivities in the two phases, nonmonotonic transformation rates due to the first-order nature of the transformation, and limits on reversibility due to first-cycle structural degradation. Minor loops additionally enable the first rational design of an optimal gate-voltage cycle. Combining this knowledge, we demonstrate state-of-the-art nonvolatile cycling of electronic and magnetic properties, encompassing >105 transport ON/OFF ratios at room temperature, and reversible metal-insulator-metal and ferromagnet-nonferromagnet-ferromagnet cycling, all at 10-unit-cell thickness with high room-temperature stability. This paves the way for future work to establish the ultimate cycling frequency and endurance of such devices.

Temperature-dependent conduction and transport mechanisms in pure and Zn-doped MgO nanomaterials

Temperature-dependent conduction and transport mechanisms in pure and Zn-doped MgO nanomaterials

Vanishing viscosity limit to the planar rarefaction wave with vacuum for 3-D full compressible Navier–Stokes equations with temperature-dependent transport coefficients

Vanishing viscosity limit to the planar rarefaction wave with vacuum for 3-D full compressible Navier–Stokes equations with temperature-dependent transport coefficients