Mg2Si has attracted considerable attention as an environmentally friendly thermoelectric material. Previous studies have revealed that the thermoelectric performance of Mg2Si is strongly affected by tensile strain. The present study aims at determining the origin of the structural effect on the thermoelectric properties from the perspective of the effective mass, which allows the quantitative analysis of the strain dependence of the electronic states near the Fermi level. We performed first-principles calculations for Mg2Si with assumed different lattice constants and calculated the Seebeck coefficients and the electrical conductivities based on the obtained electronic band structures within the Boltzmann transport theory. As a result, a lattice constant assumed to be larger than that of the equilibrium state improved the thermoelectric power factor, which is consistent with the findings of previous works. We found that this enhancement of thermoelectric performance originates from a larger effective mass of the bottom conduction band as well as an effective convergence of two conduction bands. The present calculation successfully reproduces the value of an experimental effective mass. We also find the temperature dependences of thermoelectric properties using the relaxation time obtained using experimental data.
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