Temperature Dependence Of Sputtering Yield Research Articles

MD study on temperature dependence of sputtering yield

Temperature dependence of sputtering yield is studied through molecular dynamics (MD) simulation that is performed for Ag sputtered by 12.6keV Ar impacting at normal incidence. The target temperature is considered from 300 to 1235K. It is found that the target temperature has little effect on the monomer yield because it comes from the energetic collision cascade. On the other hand, the sputtered cluster yield increases with the target temperature. It seems that the sputtered cluster is produced due to the thermal spike near the surface and the thermal spike is strongly influenced by the target temperature.

Sputtering rate of micromilling on water ice with focused ion beam in a cryogenic environment

The use of focused ion beam (FIB) milling in a cryogenic environment provides an alternative to cryomicrotome for creating submicron sections of frozen hydrated samples. Although FIB milling has been widely implemented to sculpt inorganic sample sections for analysis such as transmission electron microscopy, the application of this technique to frozen biological samples has scarcely begun. The interactions of gallium ions used in FIB with water ice as the target are still not well understood, impeding the development of this technique for routine biological analysis. In this research, amorphous water ice samples are prepared by both vapor deposition and plunge freezing, and the sputtering yield is studied based on a number of process parameters, including ion energy, temperature, and ion current. Results show that sputtering of water ice by gallium ions is a compound process of nuclear sputtering and electronic sputtering. Analytical models, originally limited to astrophysics, are adopted in this study to predict the sputtering yield of water ice by FIB. The parameters for gallium ions at keV range are estimated and validated based on the experimental data. Temperature dependence of sputtering yield is also observed in the range between 83 and 123K, in which significant increase of sputtering yield occurs when the temperature approaches 123K. Sputtering yield is not significantly affected by variation of the ion current as shown by the data. Based on these results, the process parameters involved can be characterized, and feasible settings can be developed to facilitate reproducibility and ultimately the widespread implementation of FIB to biological sample preparation.

Temperature dependence of sputtering yield of carbon fiber-reinforced carbon composites with low energy and high flux deuterium ions

A super low energy ion source (SLEIS) was used to simulate the sputtering conditions at the divertor in next fusion experimental reactors such as ITER. One directional:1D-, two directional:2D-, three directional:3D-CFCs, isotropic graphite, and B 4C doped 1D-CFC were sputtered by SLEIS with high fluxes (1–2 × 10 20/m 2/s) of 200 eV D 3 + ions. Test samples were sputtered at temperatures of 200–800°C, where chemical sputtering dominates, with an incident angle of 30° and also at 500°C with incident angles of 0–60°. Sputtering yields were calculated from the weight loss of irradiated samples and the fluences. The sputtering yields of 1D-, 2D- and 3D-CFCs showed nearly the same temperature dependence as an isotropic graphite, though the yield of B 4C doped-1D CFCs was smaller than those of these CFCs. The angular dependence of the chemical sputtering yield is determined by the cosine value of the incident angle in each CFC, where the yield of B 4C doped-1D CFC is lower than those of MFC-1 (1D) and CX-2002U (2D).

Temperature dependence of sputtering yield of GaAs under 30 keV Ar+ bombardment

Temperature dependence of sputtering yield of GaAs under 30 keV Ar+ bombardment

Fluence- and temperature-dependence of sputtering yield by 25 keV He-ion bombardment on tungsten and niobium

The fluence- and temperature-dependence of the sputtering yield by 25 keV He +-ion bombardment were investigated for W and Nb targets. The sputtering yield of Nb and W increased and reached saturation levels as fluence was increased. The saturated sputtering yield Y of W did not depend on the target temperature T, whereas Y of Nb exhibited a maximum about 900 K. An effort was made to understand this Y temperature dependence by comparison of our experimental data with theoretical predictions.