TEM Lamellae Research Articles

Cryo-FIB Minimizes Ga+ Milling Artifacts in Sn

Since FIB was first introduced, one of the major applications has been to mill site-specific crosssectioned sample surfaces [1]. This approach not only allows SEM access to the structural information buried under the surface, but it is also the first step of making TEM lamellae using FIB. Importantly, there are many reports of beam-induced damage due to FIB processing. Here, we report on artifacts induced when milling metallic Sn with Ga ions and how this problem can be minimized via cryo-FIB.

Microstructure analyses and thermoelectric properties of [formula omitted

This study reports microstructural investigations of long-term annealed Ag1−xPbmSb1+yTe2+m (m=18, x=y=0, hereinafter referred to as AgPb18SbTe20) (Lead–Antimony–Silver–Tellurium, LAST-18) as well as of Ag1−xPb18Sb1+yTe20, i.e. Ag-deficient and Sb-excess LAST-18 (x≠0,y≠0), respectively. Two different length scales are explored. The micrometer scale was evaluated by SEM to analyze the volume fraction and the number of secondary phases as well as the impact of processing parameters on the homogeneity of bulk samples. For AgPb18SbTe20, site-specific FIB liftout of TEM lamellae from thermoelectrically characterized samples was accomplished to investigate the structure on the nanometer scale. High-resolution TEM and energy-filtered TEM were performed to reveal shape and size distribution of nanoprecipitates, respectively. A hypothesis concerning the structure–property relationship is set out within the frame of a gradient annealing experiment. This study is completed by results dealing with inhomogeneities on the micrometer scale of Ag1−xPb18Sb1+yTe20 and its electronic properties.

Geometric Limits on Spatial Resolution for Cs Corrected STEM Analysis of Thick TEM Lamellae

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

TEM characterization of ALD layers in deep trenches using a dedicated FIB lamellae preparation method

Driven by the shrinking of microelectronic devices there is a demand for novel high- k insulators and electrode materials. Recently, atomic layer deposition was integrated into volume production to coat the extreme geometries of modern DRAM capacitors. In order to evaluate next generation materials for those applications we introduce a sophisticated, modified TEM lamellae preparation using H-bars and FIB technology that allows to uncover buried features not accessible by conventional preparation. This technique was used to study the film properties of HfO 2, AlN and TaN ALD layers in deep trench structures with aspect ratio up to 50:1. It was demonstrated that the method provides cross section lamellae with low FIB damage as deep as 7 µm below the original sample surface.

Anwendung der FIB für Materialwissenschaft und Fehleranalyse / Using FIB for Materials Science and Failure Analysis

The Focused Ion Beam (FIB) technology has become an indispensable tool in the development, manufacture, and failure analysis of microelectronic devices in recent years. Since the ion beam allows to manufacture, modify or etch conducting or insulating structures of about 20 nm to 100 μm in an efficient way, depending on the use of reaction gases, FIB's open up new prospects in materials science and, in particular, the target preparation of TEM lamellae which is indispensable in the micro- and nanotechnologies. In this context, FIB technology also makes it possible to prepare samples with phases of extremely different hardnesses without smearing or producing artifacts, but it has to be noted that the ion beam amorphizes some atomic layers at the surface. A combination of an electron column and an ion column within an advanced dual beam FIB will minimize possible defects. We first provide a description of the specific properties of the ion beam and the FIB set-up and will then report about a range of applications in materials- and bio-science as well as in micro- and nanoelectronics.