Technology Roadmap Research Articles

Critically assessing sodium-ion technology roadmaps and scenarios for techno-economic competitiveness against lithium-ion batteries

Critically assessing sodium-ion technology roadmaps and scenarios for techno-economic competitiveness against lithium-ion batteries

A Critical Review of the Decarbonisation Potential in the U.K. Cement Industry

As urbanisation and infrastructure development continue to drive rising cement demand, the imperative to significantly reduce emissions from this emissions-intensive sector has become increasingly urgent, especially in the context of global climate goals such as achieving net zero emissions by 2050. This review examines the status, challenges and prospects of low-carbon cement technologies and mitigation strategies through the lens of the U.K. cement industry. A mixed-methods approach was employed, combining structured literature searches across academic databases with analyses of industry reports, market data and technological roadmaps to ensure a comprehensive evaluation. Following an outline of cement production, resource flows and the sector’s landscape in the U.K., the review delves into an array of decarbonisation pathways. This includes deploying the best available technologies (BATs), fuel switching, carbon capture utilisation and storage (CCUS), clinker substitution and low-carbon cement formulations. A critical assessment is provided on the technological readiness, costs, resource availability considerations and scalability aspects governing the widespread implementation prospects of these approaches within the U.K. cement industry. Furthermore, this study proposes a roadmap that considers priority avenues and policy needs essential for facilitating the transition towards sustainable cement production aligned with the U.K.’s net zero obligations by 2050. This evaluation contributes significantly to the ongoing decarbonisation discourse by holistically mapping technological solutions and strategic imperatives tailored to the unique challenges and opportunities presented by the U.K. cement sector.

How Big Data Has Changed Technology Roadmapping: A Review on Data-Driven Roadmapping

How Big Data Has Changed Technology Roadmapping: A Review on Data-Driven Roadmapping

Optimized leakage control in CMOS NAND gates: the in-triggering technique

Abstract Leakage power, now the largest contributor to integrated circuit power consumption, is rising quickly, according to the International Technology Roadmap for Semiconductors (ITRS). As CMOS (complementary metal-oxide semiconductor) technology continues to shrink to deep submicron levels, gate leakage and subthreshold have become important components that contribute to total power dissipation. To address this problem, many methods have been put forth, especially at the circuit level. In 45 nm CMOS, variability and short-channel effects limit noise margins and compromise gate delays, thereby compromising the timing closure and robustness of ultra-low voltage circuits. The resulting supply voltage guardband may reduce energy efficiency in order to achieve a reasonable production yield. Furthermore, the high leakage currents of these technologies decrease energy efficiency when idle intervals are prolonged. In this study, two designs of a novel two-input NAND gate at 45 nm CMOS technology are constructed using eight transistors (8-T). A novel circuit technique named "In-Triggering (INDEP with Bi-Triggering)" is presented in this study with the goal of lowering subthreshold leakage in digital circuits. This method is thoroughly contrasted with other leakage reduction strategies now in use, such as Base, Sleepy LECTOR, LECTOR, INDEP, and Bi-Triggering procedures. Evaluation is done using key performance measures such power-delay product (PDP), latency, subthreshold leakage power, and total power consumption. 45-nm Predictive Technology Models (PTM) with a nominal supply voltage of 1V are used in the investigation. According to our findings, the suggested In-Triggering technique outperforms the conventional NAND gate in terms of speed by 12% and significantly reduces leakage power by up to 56%. Furthermore, compared to the Base, Trig01, and INDEP NAND gates, the method offers mean power savings of 58.8%, 36.1%, and 30.7%, respectively. At supply voltages of 1V, a comprehensive comparison and verification are then conducted utilizing the several proposed and existing methodologies. The effectiveness of the In-Triggering technique in reducing leakage power in CMOS circuits is confirmed by comparing these results to the most well-known design strategies for both active operation and sleep modes.

The Overview of Silicon Carbide Technology: Status, Challenges, Key Drivers, and Product Roadmap

Arguably, SiC technology is the most rapidly expanding IC manufacturing technology driven mostly by the aggressive roadmap for battery electric vehicle penetration and also industrial high-voltage/high-power applications. This paper provides a comprehensive overview of the state of the art of SiC technology focusing on the challenges starting from the difficult and lengthy SiC substrate growth all the way to the complex MOSFET assembly processes. We focus on the differentiation from the established Si manufacturing processes and provide a comprehensive list of references as well as a brief description of our own research into the key manufacturing processes in this technology. We also present a SiC technology and product roadmap.

Business model innovation and SMEs’ resilience: technological roadmap in Nigeria

Business sustainability is a factor that businesses, especially SMEs, are giving more and more thought to. Businesses are now looking for methods to integrate sustainable practices into their operations while keeping their business models intact as a result. This study primarily looks at how technology might improve company resilience in order to investigate the connection between SMEs’ business models and their pursuit of sustainability. To enable the study’s main goals be achieved, three hypotheses were developed. The study’s goal was explained using the Resource Based View Theory, Dynamic Capability Theory, and Institutional Theory. By combining purposive and convenience random selection approaches, the researchers performed a field survey of 420 SME operators in Nigeria in order to meet this goal. Smart PLS 3.0 was utilized in the study to evaluate the information gathered. Specifically, they assessed the extent and strength of the correlations between these constructs using path coefficients, t-statistics, R-square values, and p-values. According to the study, technology competence moderates the association between business model innovation and businesses’ resilience, indicating that by utilizing technological skills, business model innovation’s beneficial effects on a firm’s resilience may be amplified. The technology acceptance concept, which contends that adopting new technology may enhance organizational performance, is supported by this research. As SMEs frequently deal with budget limitations and technology difficulties, the study’s findings have significant significance for them. SMEs may be better positioned to survive upheavals and develop resilience by adopting new business strategies and utilizing technical skills. The study discovered that in order to increase their resilience, SMEs must actively adapt to fast-paced and competitive environments using their internal strengths. This indicates that SMEs must assess the value of innovation models in relation to their specific line of business. The study emphasizes the significance of the network interaction between technological innovation, business model innovation, and SMEs’ resilience. The capacity to use technology, which is essential for boosting SMEs’ resilience, strengthens this link. In summary, this study offers a current road map for technical development in the context of novel business models and the resilience of SMEs in Nigeria. This study offers helpful insights for SMEs looking to improve their business models and increase their sustainability in the face of shifting economic and environmental conditions by examining the connections between business model innovation, SMEs’ resilience, and technology.

Improving the Performance of Arsenene Nanoribbon Gate-All-Around Tunnel Field-Effect Transistors Using H Defects.

We systematically study the transport properties of arsenene nanoribbon tunneling field-effect transistors (TFETs) along the armchair directions using first-principles calculations based on density functional theory combined with the non-equilibrium Green's function approach. The pristine nanoribbon TFET devices with and without underlap (UL) exhibit poor performance. Introducing a H defect in the left UL region between the source and channel can drastically enhance the ON-state currents and reduce the SS to below 60 mV/decade. When the H defect is positioned far from the gate and/or at the center sites, the ON-state currents are substantially enhanced, meeting the International Technology Roadmap for Semiconductors requirements for high-performance and low-power devices with 5 nm channel length. The gate-all-around (GAA) structure can further improve the performance of the devices with H defects. Particularly for the devices with H defects near the edge, the GAA structure significantly reduces the SS values as low as 35 mV/decade. Our study demonstrates that GAA structure can greatly enhance the performance of the arsenene nanoribbon TFET devices with H defects, providing theoretical guidance for improving TFET performance based on two-dimensional material nanoribbons through the combination of defect engineering and GAA gate structures.

MoS2-Based NH3 Sensor for In Situ Helicobacter pylori Detection.

Detection of Helicobacter pylori is essential for the prevention of gastric cancer. By detecting the metabolized NH3, it was able to noninvasively reveal the state of H. pylori; however, it is still a challenge since the metabolized NH3 concentration is much lower for conventional gas sensors. Herein, we developed a MoS2-based NH3 sensor for continuous, real-time monitoring of H. pylori growth. The atomic thin layer and the all-exposed surface of MoS2 facilitate NH3 adsorption and charge transferring. A high-response NH3 sensor was prepared by surface decoration of MoS2 by depositing metal nanoparticles. The Fe-decorated MoS2 sensor outperformed with a high response of 40.9% for 5.7 ppm of NH3 at 25 ± 2 °C, low LOD (6.2 ppb), and long-term stability with a response of 12.5% for 5.7 ppm of NH3 after 5 months. The Fe-decorated MoS2 sensor was applied to the detection of H. pylori and the real-time in situ monitoring of its 92 h growth cycle. The NH3 release curve of the exponential phase during H. pylori growth was continuously monitored, and the NH3 concentration was quantified. The maximum specific rate of NH3 release was 0.195 ± 0.005 h-1, which is well-consistent with the nature of H. pylori growth. This study opens up a technological roadmap for noninvasive detection of H. pylori in the future.

NANOTECHNOLOGY MEETS QUANTUM COMPUTING: ADVANCING QUANTUM BITS (QUBITS) AND DEVICES FOR NEXT GENERATION COMPUTING

Purpose: This work aims to understand the relevance of nanotechnology in the enhancement of quantum computing with an emphasis on the perceptions of workers in the fields. The research is going to examine the identification of these perception factors thereof by elaborating on the field of expertise of the participants of this research, their experience in the field, and their awareness of quantum bits or qubits to offer future guidelines for pertinent research and development. Objective: The goals of this research are as follows: The first is to evaluate the present status of nanotechnology in quantum computing, second, to define the factors, which influence the professional meaning of the concept, and third, to discover the literature deficiencies. The present research also intends to provide suggestions on how interpersonal and interprofessional cooperation and research in this emerging area can be improved. Methodology: Consequently, there was the use of a cross-sectional survey design, and participants included experts in nanotechnology, quantum computing, and related areas. The questions posed in the survey addressed respondents’ experience, their view on the role of nanotechnology and their background. Data collected in this study were analyzed using the chi-square tests, ANOVA test, T-tests, correlation analysis, and regression analysis to examine the relationship between variables and determine the goodness of fit in the tests. The survey sample included 210 participants and therefore offered considerable reliability for the evaluation. Results: The first sets of chi-square tests revealed no correlation between the field of speciality and views on nanotechnology (χ² = 14. 77, p = 0. 789), or between their level of quip familiarity and preference for nanomaterials (χ² = 13. 56, p = 0. 631). ANOVA test, which compared the perceived significance of nanotechnology to the years of experience, brought out an F-statistic of 0. 96 which is non-significant at p > 0. 05 of 0. 428. The T-test of researchers’ and graduate students’ perception of nanotechnology showed an insignificant value at p > 0. 05 of 1. 17. According more to the correlation analysis the results of the correlation between years of experience and perceptions of nanotechnology were non-significant (r = - 0. 03 p = 0. 664). Years of experience and familiarity with qubits explained less than 1 % of the total explanation of the perceptions (R² = 0. 002, F = 0. 22, p = 0. 803). Practical Implications: Evidently, the current study established that nanotechnology is unanimously considered of extreme importance in quantum computing, to those with no experience in it, or those coming from different fields of specialty. This reflects the need for increased funding of open-ended nanoscale research and development and industries to work together as a system to solve the engineering issues that remain in communication in the development of quantum systems. The outcomes also reflect the importance of maintaining efforts in introducing nanotechnology as a part of educational programs in quantum computing so that the new generation of specialists could contribute to the development of the field. Novelty: Thus, this study is one of the first ones which invests empirical evidence on experts’ perceptions of nanotechnology in quantum computing and involves a large and heterogeneous sample. Therefore, using a wide variety of statistical methods, the research offers a more detailed picture of factors that affect these perceptions and points to what concerns may be relevant for future studies. The results enrich the current discussion on the further evolution of quantum computing and the scientists’ plans for the coming decades integrating nanotechnology into the new field. Conclusion: The findings demonstrate a general appreciation of the significance of nanotechnology in quantum computing across scholars in the field with no variation across the fields of specialization, years of experience, or career development. At the same time, the results suggest the hypothesis that other factors influencing the perceptions remain more important than the investigated ones and are not included in this study. These results compellingly suggest that further technical research is still needed to address the barriers which limit the extension of quantum computing and help define a feasible roadmap for this disruptive technology.

Dual-gated MOSFETs of α-In2Se3 monolayer for high performance and low power logic applications

As a well-known van der Waals 2D material with entangled ferroelectricity and semiconductivity, α-In2Se3 has garnered significant attention in recent years to develop novel nonvolatile (photo) electronic devices mainly based on its ferroelectricity. However, the ability of its semiconductivity to design 2D transistors for high-performance (HP) and low-power (LP) logic applications remains unclear. Herein, this article reveals the potential of α-In2Se3 as a semiconductor in sub-10 nm 2D transistors. We analyze a dual-gated metal–oxide–semiconductor field-effect transistor (MOSFET) based on monolayer (ML) α-In2Se3 with a 5 nm channel-length, utilizing density functional theory (DFT) in combination with non-equilibrium Green’s function method. The transport performance indicators of n-type MOSFET along the zigzag direction can satisfy or nearly satisfy the HP and LP application requirements of the International Technology Roadmap for Semiconductor (ITRS) 2013, while p-type MOSFET along the armchair direction exhibits an outstanding on-current attributed to effective mass and the density of states modulation. The p-type MOSFETs also exhibit ultralow leakage current and subthreshold swing below 60 mV/dec. Meanwhile, our simulated MOSFETs demonstrate large on-current and high ON/OFF ratios. These findings highlight the application prospect of α-In2Se3 as a conventional 2D semiconductor material for further 2D FETs in HP and LP logic applications.

Patterning of Sin and SiO2 Nanostructures for 3D Electronic Devices at Low Temperatures

Silicon oxide, SiO2, and silicon nitride, SiN, are widely used in memory and logic devices because of their dielectric properties, compatibility with silicon-based devices and etching selectivity. Advanced electronic devices are integrated increasingly in vertical direction, and critical etching challenges must be addressed to advance the technology roadmap. Among the enabling applications are vertical etching of SiO2 and SiN with high aspect ratio as well as lateral or isotropic etching of these films with high selectivity. Hydrofluoric acid gas has been used for over 30 years for isotropic etch of SiO2 (1, 2). The process has many similarities with wet etching using HF and requires the presence of water at the surface. Gas-phase etching of silicon nitride films has been demonstrated using moist HF vapor followed by heating of the wafer to remove ammonium fluorosilicate (NH4)2SiF6 or AFS as an intermediate reaction product (3). Recently, HF is used in high aspect ratio plasma etching of SiO2, SiN and multilayer stacks of these films at wafer temperatures below room temperatures (4). The elementary reactions bare resemblance with the vapor etch analogues. In this paper, we will present experimental results on plasma and vapor etching of SiO2 and SiN. The underlaying etching mechanisms will be explained using molecular dynamics and density functional theory.

(Invited) Advanced Analysis Technologies Developed in Nedo FC-Platform: From Innovative Material Developments to Solving Problems for Industrial Implementation

Polymer electrolyte fuel cells are a key device for hydrogen utilization towards achieving carbon neutrality. It is effective to expand it not only to FCVs, but also to heavy duty vehicles (HDVs) and other mobilities to expand the range of its use. In many countries around the world, application to trucks has become mainstream, and its application to trains and ships is also progressing. The specifications required for fuel cells for such heavy-duty usage are higher performance and durability than fuel cells for FCVs, making material development challenging. [1]Considering such background, NEDO is working with the industry to envision the fuel cell specifications that will be needed around 2030 and 2040. [2] By breaking the overall target down to each material target, we are making our research and development goals more concrete: the 2030 materials targets will require solutions to current complex and difficult challenges and the material development targets for 2040 are aggressive targets that may not be achieved by extending current material development. We have built and operate NEDO FC-platform to promote and support such challenging research and development. [3, 4] (Fig. 1)The materials analysis group in NEDO FC-Platform has four missions to contribute to achieving these goals: support for the development of innovative materials, database construction to promote materials informatics, advanced phenomenon analysis for simulator development, and advanced phenomenon analysis for solving industrial issues. Research institutes in Japan are working together to advance the sophistication of analysis technology.The figure below shows the portfolio of advanced analysis technology in NEDO FC -Platform. The development of fuel cells with a hierarchical structure requires multiscale analysis techniques. High-performance electron microscope and operando X-ray analysis technology to measure structure and dynamics at the atomic level, X-ray and neutron beam analysis technology to analyze catalyst layer structure and formation process, and visualization of reactions and changes in their distribution within the catalyst layer, and X-ray and neutron technology for elucidating mass transfer and phenomena at the cell level is progressing, and it is being applied to fuel cells provided by industry to verify their effectiveness. We are conducting verification and working to resolve issues.Furthermore, in the coming years, synchrotron radiation facilities, such as SPring-8 and NanoTerasu will be upgraded, and neutron facilities such as J-PARC and electron microscopes will become more sophisticated. We are also working on improving the performance of measurement hardware and innovating measurement technology through digitalization, and we will discuss our prospects. Acknowledgement This work is based on results obtained from a project commissioned by the New Energy and Industrial Technology Development Organization (NEDO). References :[1] Cullen, D.A., Neyerlin, K.C., Ahluwalia, R.K. et al. New roads and challenges for fuel cells in heavy-duty transportation. Nat Energy 6, 462–474 (2021).[2] Technology Roadmap Hydrogen and Fuel Cells, https://www.nedo.go.jp/content/100973008.pdf[3] K. Amemiya, et. al., 242nd ECS meeting abstract.[4] N. Takeuchi, et. al., 244th ECS meeting abstract. Figure 1

A Novel Method for Technology Roadmapping: Nanorobots

In the dynamic field of robotics engineering, nanorobot technology has witnessed rapid advancements. Developing a technology roadmap is essential for quickly identifying the trends and key technological aspects of nanorobotics from an array of multi-source data. Traditional research methods, such as Delphi surveys, bibliometrics, patent analysis, and patent paper citation analyses, often fail to capture the rich semantic information available. Moreover, these approaches generally provide a unidimensional perspective, which restricts their capacity to depict the complex nature of technological evolution. To overcome these shortcomings, this paper introduces a novel framework that utilizes the ALBERT method combined with multi-source data for critical theme extraction. It integrates varied data sources, including academic papers and patents, to explore the interrelation within the nanorobot technology roadmap. The methodology begins with text feature extraction, clustering algorithms, and theme mining to identify dominant technological themes. Subsequently, it applies semantic similarity measures to connect multiple themes, employing a “multi-layer ThemeRiver map” for a visual representation of these inter-layer connections. The paper concludes with a comprehensive analysis from both the technological research and industrial application perspectives, underscoring the principal developmental themes and insights of nanorobot technology, and projecting its future directions.

Strategic Leadership in IT: Governance, Innovation, and Value Creation Through Effective Portfolio Management

This comprehensive article examines the critical role of IT leadership in driving organizational success through effective governance, innovation, and value-creation mechanisms. The article analyzes data from multiple industry sources, revealing that organizations with mature IT governance frameworks achieve 15-25% higher returns on technology investments and demonstrate 3.5 times faster revenue growth. Through detailed case studies of Datatronics and Genex Fuels, the research illustrates how strategic IT leadership can deliver substantial business value, with Datatronics achieving a 312% return on digital investments and Genex Fuels realizing a 267% ROI through systematic portfolio transformation. The article encompasses key areas, including IT governance frameworks, portfolio management strategies, technology roadmap development, and productivity enhancement approaches, supported by quantitative data demonstrating how organizations leveraging advanced IT capabilities significantly improve operational efficiency, customer satisfaction, and market competitiveness.

Roadmap, current situation, and prospects of low-carbon development technologies in Chinese steel industry

Roadmap, current situation, and prospects of low-carbon development technologies in Chinese steel industry

Technology Gap Analysis on the BIM-Enabled Design Process of Prefabricated Buildings: An Autoethnographic Study

This research explores the pivotal role of Building Information Modeling (BIM) technology in revolutionizing the design and construction of prefabricated buildings. It highlights the benefits of BIM-enabled design processes, including improved coordination and efficiency, while addressing challenges in integrating BIM with prefabricated elements. The study proposes artificial intelligence (AI) solutions to enhance architectural detailing, optimize workflows, and facilitate human–robot collaboration. Using autoethnographic methods, the research refines BIM-forward design through thematic analysis and technology gap (TG) assessments. It advocates for a comprehensive technology roadmap that emphasizes BIM libraries, external data sources, and the transition to a multi-dimensional BIM environment. This research contributes valuable insights to advance BIM practices in prefabricated building construction and offers a strategic framework to bridge existing TGs, enabling seamless integration of BIM and AI in future practices.

Latest advancements and prospects in the next-generation of Internet of Things technologies.

The Internet of Things (IoT) is a sophisticated network of objects embedded with electronic systems that enable devices to collect and exchange data. IoT is a recent trending leading technology and changing the way we live. However, it has several challenges especially efficiency, architecture, complexity, and network topology. The traditional technologies are not enough to provide support. It is evident from the literature that complex networks are used to study the topology and the structure of a network and are applied to modern technologies. Thus, the capability of powerful computational tools and the existence of theoretical frameworks enable complex networks to derive new approaches in analyzing IoT-based technologies in terms of improving efficiency, architecture, complexity, and topology. In this direction, limited research has been carried out. The integration aspect remains a key challenge. Therefore, in order to fill this gap. Herein, we design a comprehensive literature review. In this research effort, we explore a newly leading emerging technology named the Social Internet of Things (SIoT). It is developed to overcome the challenges in IoT. We discuss the importance and the key applications of SIoT. We first presented a conceptual view along with a recent technological roadmap. The big data play an important role in the modern world. We discuss big data and the 5 Vs along with suitable applications and examples. Then, we highlighted the key concepts in complex networks, scale-free, random networks, and small-world networks. We explored and presented various graph models and metrics aligned with social networks and the most recent trends. The novelty of this research is to propose a synergy of complex networks to the IoT, SIoT, and big data together. We discuss the advantages of integration in detail. We present a detailed discussion on complex networks emerging technologies and cyber-physical systems (CPS). Briefly, our literature review covers the most recent advancements and developments in 10 years. In addition, our critical analysis is based on up-to-date surveys and case studies. Finally, we outline the impact of recent emerging technologies on challenges applications, and solutions for the future. This paper provides a good reference for researchers and readers in the IoT domain.

A Technological Development Roadmap for Latecomer Telecommunications Companies Based on Industry-Specific Elements and Development Strategies

A Technological Development Roadmap for Latecomer Telecommunications Companies Based on Industry-Specific Elements and Development Strategies

Technology roadmap toward the completion of whole-brain architecture with BRA-driven development

The development of brain-morphic software holds significant promise for creating artificial general intelligence that exhibits high affinity and interpretability for humans and also offers substantial benefits for medical applications. To facilitate this, creating Brain Reference Architecture (BRA) data, serving as a design specification for brain-morphic software is imperative. BRA-driven development, which utilizes Brain Information Flow (BIF) diagrams based on mesoscale brain anatomy and Hypothetical Component Diagrams (HCD) for corresponding computational functionalities, has been proposed to address this need. This methodology formalizes identifying possible functional structures by leveraging existing, albeit insufficient, neuroscientific knowledge. However, applying this methodology across the entire brain, thereby creating a Whole Brain Reference Architecture (WBRA), represents a significant research and development challenge due to its scale and complexity. Technology roadmaps have been introduced as a strategic tool to guide discussion, management, and distribution of resources within such expansive research and development activities. These roadmaps proposed a manual, anatomically based approach to incrementally construct BIF and HCD, thereby systematically expanding brain organ coverage toward achieving a complete WBRA. Large Language Model (LLM) technologies have introduced a paradigm shift, substantially automating the BRA-driven development process. This is largely due to the BRA data being structured around the brain’s anatomy and described in natural language, which aligns well with the capabilities of LLMs for supporting and automating the construction and verification processes. In this paper, we propose a novel technology roadmap to largely automate the creation of WBRA, leveraging neuroscientific insights. This roadmap includes 12 activities for automating BIF construction, notably extracting anatomical structures from scholarly articles. Furthermore, it details 11 activities aimed at enhancing the integration of Hypothetical Component Diagrams (HCD) into the WBRA, focusing on automating checks for functional consistency. This roadmap aims to establish a cost-effective and efficient design process for WBRA, ensuring the availability of brain-morphic software design specifications that are continually validated against the latest neuroscientific knowledge.

Monolayer MoS2 and WS2 for Vertical Circular‐ Polarized‐Light‐Emitting Diode: from Fundamental Understanding to Device Architecture

AbstractLight‐emitting diodes (LEDs) have revolutionized lighting and displays due to their numerous advantages over conventional lighting mechanisms. Moreover, the directional nature of luminescent materials has spurred significant advancements in the development of circularly polarized LEDs, which hold transformative potential for applications in biomedical imaging, liquid crystal displays, spintronics, and valleytronics. The performance of circularly polarized LEDs mainly depends on the emitter material, which is this study's focus. In particular, semiconducting‐phase 2D monolayer MoS2 and WS2 are attractive emitter‐material candidates owing to their bandgap versatility, high carrier mobility, high exciton binding energy, polarized‐light‐emission properties, and unique spin–valley coupling. Several works have examined the fundamental light‐emission properties of monolayer MoS2 and WS2 from the perspectives of optoelectronic concepts, material fabrication, and device construction. This paper presents approaches to control, tune, and enhance these properties of monolayer MoS2 and WS2. Possible guidelines for monolayer‐material synthesis (top‐down and bottom‐up approaches) and device engineering of vertically stacked MoS2 and WS2 are presented. Finally, the review considers the material topological characteristics, outlines the challenges and potential of monolayer MoS2 and WS2 for developing high‐performance commercial circularly polarized LED devices, and proposes a technological roadmap for leveraging other monolayer transition metal dichalcogenide systems in optoelectronic devices.