Switching Process Research Articles

Impacting metamaterials: The threshold for wave propagation in holey columns

We study the dynamic deformation of columns containing a periodic array of holes subject to impact loading. When compressed slowly, holey columns buckle beyond a critical compressive strain, and global pattern switching (from circular holes to orthogonal ellipses) occurs instantaneously. In contrast, the dynamic deformation of holey columns is driven by wave propagation; impact induces a compressive wave that buckles the ligaments surrounding a hole, nucleating a sequential pattern switching process. Subsequent void collapse, which ultimately leads to self-contact and topological modification, is driven by the moving boundary. Here, we identify the critical impact velocity above which the compression can no longer be considered quasistatic, and we show that it depends on system size. For dynamic deformations, we show that internal displacements are independent of impact velocity and propagate at the material sound speed, whereas the topological transition wave propagates at a speed that depends on the impact velocity. Published by the American Physical Society 2024

Design of polar boundaries enhancing negative electrocaloric performance by antiferroelectric phase-field simulations

Electrocaloric refrigeration which is environmentally benign has attracted considerable attention. In distinction to ferroelectric materials, which exhibit an extremely high positive electrocaloric effect near the Curie temperature, antiferroelectric materials represented by PbZrO3 have a specific negative electrocaloric effect, i.e., electric field decreases the temperature of the materials. However, the explanation of the microscopic mechanism of the negative electrocaloric effect is still unclear, and further research is still needed to provide a theoretical basis for the negative electrocaloric effect enhancement. Herein, the antiferroelectric phase-field model has been proposed to design polar boundaries enhancing antiferroelectric negative electrocaloric performance in PbZrO3-based materials. Based on this, we have simulated the polarization response and domain switching process of the temperature and electric field-induced antiferroelectric—ferroelectric phase transition. It is shown that the temperature range tends to increase as the density of polar boundaries increases from the antiferroelectric stripe domain, polymorphic domain to the nanodomain. Among them, the peak adiabatic temperature change of antiferroelectric nanodomains can reach −13.05 K at 84 kV/cm, and a wide temperature range of about 75 K can be realized at 42 kV/cm. We expect these discoveries to spur further interest in the potential applications of antiferroelectric materials for next-generation refrigeration devices.

Asymmetric Manipulation of Perpendicular Exchange Bias and Programmable Spin Logical Cells by Spin-Orbit Torque in a Ferromagnet/Antiferromagnet System.

Antiferromagnets are competitive candidates for the next generation of spintronic devices owing to their superiority in small-scale and low-power-consumption devices. The electrical manipulation of the magnetization and exchange bias (EB) driven by spin-orbit torque (SOT) in ferromagnetic (FM)/antiferromagnetic (AFM) systems has become focused in spintronics. Here, the realization of a large perpendicular EB field in Co/IrMn and the effective manipulation of the magnetic moments of the magnetic Co layer and EB field by SOT in Pt/Co/IrMn system is reported. During the SOT-driven switching process, an asymmetrically manipulated state is observed. Current pulses with the same amplitude but opposite directions induce different magnetization states. Magneto-optical Kerr measurements reveal that this is due to the coexistence of stable and metastable antiferromagnetic domains in the AFM. Exploiting the asymmetric properties of these FM/AFM structures, five spin logic gates, namely AND, OR, NOR, NAND, and NOT, are realized in a single cell via SOT. This study provides an insight into the special ability of SOT on AFMs and also paves an avenue to construct the logic-in-memory and neuromorphic computing cells based on the AFM spintronic system.

Lumican promotes calcific aortic valve disease through H3 histone lactylation.

Valve interstitial cells (VICs) undergo a transition to intermediate state cells before ultimately transforming into the osteogenic cell population, which is a pivotal cellular process in calcific aortic valve disease (CAVD). Herein, this study successfully delineated the stages of VIC osteogenic transformation and elucidated a novel key regulatory role of lumican (LUM) in this process. Single-cell RNA-sequencing (scRNA-seq) from nine human aortic valves was used to characterize the pathological switch process and identify key regulatory factors. The in vitro, ex vivo, in vivo, and double knockout mice were constructed to further unravel the calcification-promoting effect of LUM. Moreover, the multi-omic approaches were employed to analyse the molecular mechanism of LUM in CAVD. ScRNA-seq successfully delineated the process of VIC pathological transformation and highlighted the significance of LUM as a novel molecule in this process. The pro-calcification role of LUM is confirmed on the in vitro, ex vivo, in vivo level, and ApoE-/-//LUM-/- double knockout mice. The LUM induces osteogenesis in VICs via activation of inflammatory pathways and augmentation of cellular glycolysis, resulting in the accumulation of lactate. Subsequent investigation has unveiled a novel LUM driving histone modification, lactylation, which plays a role in facilitating valve calcification. More importantly, this study has identified two specific sites of histone lactylation, namely, H3K14la and H3K9la, which have been found to facilitate the process of calcification. The confirmation of these modification sites' association with the expression of calcific genes Runx2 and BMP2 has been achieved through ChIP-PCR analysis. The study presents novel findings, being the first to establish the involvement of lumican in mediating H3 histone lactylation, thus facilitating the development of aortic valve calcification. Consequently, lumican would be a promising therapeutic target for intervention in the treatment of CAVD.

Local bandgap narrowing in the forming state of threshold switching materials

Threshold switching (TS) materials, such as amorphous chalcogenide, have received significant attention for their application in storage class memory and in-memory computing. These materials contribute to efficient data processing and reduced power consumption in data centers. The initial switching process after fabricating a TS device, known as “forming,” has a profound impact on its subsequent TS behavior. However, it remains unclear how TS materials undergo changes in their atomic and electronic structures during the forming process. Consequently, the key factors that govern TS behavior remain obscure, necessitating a deeper understanding of the underlying physics behind TS phenomena. In this Letter, we investigated the forming state of the TS material AlTeN by combining scanning internal photoemission microscopy (SIPM) and ab initio calculations. Thanks to nondestructive evaluation by SIPM measurements, we observed local bandgap narrowing of AlTeN after its forming process. This is an experimental demonstration showing the presence of nuclei of the conductive filament formed in its ON state. Moreover, we conducted an ab initio calculation to reveal the origin of bandgap narrowing. We applied strong electrothermal stresses to the AlTeN model by ab initio molecular dynamics simulation with high electronic and lattice temperatures. By quenching from the electrothermal stress conditions, we reproduced an experimentally observed forming state with a narrowed bandgap. Analysis of the electronic structures of the forming state revealed that the origin of bandgap narrowing is the generation of the valence band top and conduction band bottom stemming from the increased homopolar bonds.

Realization of all-optical hybrid photonic diode and all-optical modulation through spatial self-phase modulation utilizing solution-processed chalcogenide glass as nonlinear optical materials

This study represents the first investigation into the nonlinear optical response of Ge25Sb5Se70 chalcogenide glass colloid using the spatial self-phase modulation technique with a 403 nm laser beam. Spatial self-phase modulation patterns were recorded within the glass colloid at different input powers, and the optical parameters were measured. Furthermore, the study demonstrates the first-ever realization of an all-optical chalcogenide glass/titanium oxide hybrid photonic diode through the unidirectional excitation of spatial self-phase modulation patterns. All-optical modulation in chalcogenide glass colloids through spatial self-phase modulation employing multiple wavelengths (403 nm and 632.8 nm) was also demonstrated. These findings suggest promising applications of chalcogenide glass-based photonic devices in nonlinear optics, particularly in areas such as all-optical switching and signal processing.

Thermally Oxidized Memristor and 1T1R Integration for Selector Function and Low-Power Memory.

Resistive switching memories have garnered significant attention due to their high-density integration and rapid in-memory computing beyond von Neumann's architecture. However, significant challenges are posed in practical applications with respect to their manufacturing process complexity, a leakage current of high resistance state (HRS), and the sneak-path current problem that limits their scalability. Here, a mild-temperature thermal oxidation technique for the fabrication of low-power and ultra-steep memristor based on Ag/TiOx/SnOx/SnSe2/Au architecture is developed. Benefiting from a self-assembled oxidation layer and the formation/rupture of oxygen vacancy conductive filaments, the device exhibits an exceptional threshold switching behavior with high switch ratio exceeding 106, low threshold voltage of ≈1V, long-term retention of >104s, an ultra-small subthreshold swing of 2.5mVdecade-1 and high air-stability surpassing 4 months. By decreasing temperature, the device undergoes a transition from unipolar volatile to bipolar nonvolatile characteristics, elucidating the role of oxygen vacancies migration on the resistive switching process. Further, the 1T1R structure is established between a memristor and a 2H-MoTe2 transistor by the van der Waals (vdW) stacking approach, achieving the functionality of selector and multi-value memory with lower power consumption. This work provides a mild-thermal oxidation technology for the low-cost production of high-performance memristors toward future in-memory computing applications.

Optimal chiller loading considering the energy loss associated with the switching of chillers based on a novel hybrid fuzzy-metaheuristic method

In existing research, the energy loss associated with the switching of chillers has not been taken into account when addressing the traditional optimal chiller loading (tra-OCL) problem. Chillers incur a certain amount of energy loss during the switching process in practical operations. Hence, it is crucial to investigate the optimal chiller loading problem considering the energy loss associated with the switching of chillers (loss-OCL). In this study, we propose a novel parameter adaptation imperialist competitive algorithm based on parallel fuzzy inference systems (PA-ICA-PF) to solve the loss-OCL problem. Three operators—velocity adaptation, velocity divergence, and mutation-crossover—are introduced to enhance assimilation, revolution, and imperialist competition stages. Two fuzzy inference systems are utilized to concurrently guide searches in the solution space, ensuring a balance between diversification and intensification. The proposed method was experimentally verified in an actual multi-chiller system. Experimental results indicate that the total energy consumption of the system, when addressing the loss-OCL, is significantly lower than the actual value but slightly higher than the tra-OCL. This suggests that the proposed method is capable of obtaining the optimal partial load ratio of chillers while accounting for energy losses. To further validate the effectiveness of the proposed algorithm, we compared it with existing algorithms. Experimental results demonstrate that the proposed PA-ICA-PF method exhibits the best performance.

Automatic Switching of Three Phase Induction Motor during Fault Condition

Abstract: Three-Phase Induction Motor Automated Transition in Defective Conditions Maintaining the effective operation of three-phase induction motors is crucial in a variety of industrial contexts. However, malfunctions such as phase inconsistency, voltage drop, and overcurrent can seriously impair motor performance, leading to loss of operation and possible damage. This article introduces an automatic switching method designed to improve the fault-tolerance capacity of induction motors in order to address these issues. The system uses advanced fault detection algorithms to identify abnormal conditions quickly and enable a seamless transition to backup power or other configurations. It also incorporates preventive measures to guard against phase abnormalities and voltage variations that could harm the motor. Through simulation and real-world testing, the suggested system's dependability and effectiveness are confirmed, highlighting its potential to guarantee continuous motor running in industrial applications, a three-phase induction motor must be automatically switched on. A two-motor system a primary motor and a backup motor is shown in this study. If the primary motor fails, the backup motor is automatically turned on. Microcontroller design controls the entire switching process.

Phase Transformation Driven by Oxygen Vacancy Redistribution as the Mechanism of Ferroelectric Hf0.5Zr0.5O2 Fatigue

AbstractAs a promising candidate for nonvolatile memory devices, the hafnia‐based ferroelectric system has recently been a hot research topic. Although significant progress has been made over the past decade, the endurance problem is still an obstacle to its final application. In perovskite‐based ferroelectrics, such as the well‐studied Pb[ZrxTi1−x]O3 (PZT) family, polarization fatigue has been discussed within the framework of the interaction of charged defects (such as oxygen vacancies) with the moving domains during the switching process, particularly at the electrode‐ferroelectric interface. Armed with this background, a hypothesis is set out to test that a similar mechanism can be in play with the hafnia‐based ferroelectrics. The conducting perovskite La‐Sr‐Mn‐O is used as the contact electrode to create La0.67Sr0.33MnO3 / Hf0.5Zr0.5O2 (HZO)/ La0.67Sr0.33MnO3 capacitor structures deposited on SrTiO3‐Si substrates. Nanoscale X‐ray diffraction is performed on single capacitors, and a structural phase transition from polar o‐phase toward non‐polar m‐phase is demonstrated during the bipolar switching process. The energy landscape of multiphase HZO has been calculated at varying oxygen vacancy concentrations. Based on both theoretical and experimental results, it is found that a polar to non‐polar phase transformation caused by oxygen vacancy redistribution during electric cycling is a likely explanation for fatigue in HZO.

Switching and Frequency Response Assessment of Photovoltaic Drivers and Their Potential for Different Applications.

Newly introduced Photovoltaic (PV) devices, featuring a built-in chip with an illuminating Light Emitting Diode (LED), have emerged in the commercial market. These devices are touted for their utility as both low- and high-side power switch drivers and for data acquisition coupling. However, comprehensive knowledge and experimentation regarding the limitations of these Photovoltaic Drivers in both switching and signal processing applications remain underexplored. This paper presents a detailed characterization of a Photovoltaic Driver, focusing on its performance under resistive and capacitive loads. Additionally, it delineates the device's constraints when employed in signal processing. Through the analysis of switching losses across various power switches (Silicon and Silicon Carbide) in both series and parallel driver configurations, this study assesses the driver's efficacy in operating Junction Field-Effect Transistors (JFETs). Findings suggest that Photovoltaic Drivers offer a low-cost, compact solution for specific applications, such as high-voltage, low-bandwidth measurements, and low-speed turn-on with fast turn-off power switching scenarios, including solid-state switches and hot-swap circuits. Moreover, they present a straightforward, cost-effective method for driving JFETs, simplifying the circuit design and eliminating the need for an additional negative power source.

Transient characterization of the mode switching process in the reversible solid oxide cell stack

Reversible solid oxide cells (RSOCs) is a promising energy storage and conversion technology requiring frequent switching between fuel cell mode and electrolysis mode in practice. Unfortunately, it may cause a large current density undershoot that has irreversible damage to the RSOC. Therefore, understanding the transient behaviors of the RSOC is critical for its efficient and durable operation. A three-dimensional transient model of a 30-cell SOC stack with an external manifold is established. From SOFC to SOEC, the mass transfer lag and slow heat transfer cause the current density of the stack requiring 2500 s to reach a steady state. And the bottom inlet way and the external manifold structure cause differences in the current density, molar fraction and temperature variation with time between different cells. The upper cells show a slower mass transfer rate and undergo greater temperature changes. The inconsistent temperature change gradients and temperature change rates among different cells will inevitably produce changing thermal stresses and bring irreversible mechanical losses to the stack. Similar transient characteristics are observed when switching from SOEC to SOFC. However, it takes longer time (3200 s) to achieve the final steady state.

Adaptive Flow Timeout Management in Software-Defined Optical Networks

Current trends in network traffic management rely on the efficient control of individual flows. Software-defined networking popularized this notion. Per-flow management is perfectly viable in standard IP networks, in which packet processing is in the electric domain. However, optical networks provide more restrictions and constraints making per-flow traffic management difficult. One of the most important challenges is to reduce the concurrent number of flows present in the flow tables to make the switching process quicker. In this paper, we propose a mechanism to manage flow timeout values that uses idle timeout and hard timeout parameters. To calculate the appropriate values of the parameters, the mechanism analyzes the packet inter-arrival times. The algorithm also takes into account the current occupancy of the flow table.

Advanced gate driving concepts and switching optimization for SiC semiconductors

Silicon carbide (SiC) MOSFETS are increasingly favoured in power electronics for their improved properties compared to silicon-based counterparts, such as IGBTs. Their ability to operate at higher switching frequencies and execute faster switching transients is notable. However, these features also raise significant concerns with electromagnetic interference (EMI). To exploit the full capabilities of SiC-based technology, meticulous design strategies encompassing the power stage, commutation loop, and gate drive are essential. This paper conducts a comprehensive review of existing gate drive techniques aimed at enhancing the performance of SiC devices. Moreover, this study introduces an innovative approach for optimizing switching processes through the use of active gate drivers (AGD). By pre-mapping the gate-source voltage profiles for different conditions (such as load current, temperature, and DC-link voltage), it is possible to achieve a significantly improved switching trajectory. This optimization process can be applied on a cycle-by-cycle basis in practical scenarios. Herein, pre-mapping and optimization have been experimentally confirmed in a half-bridge configuration. Through simulation, it is demonstrated that optimizing the switching trajectory can lead to a balanced compromise between EMI and switching losses, showcasing the potential for significant performance enhancements in SiC device operation.

Spike-enhanced synapse functions of SnOx-based resistive memory

This paper explores the application of resistive random-access memory (RRAM) devices in emulating various synapse functions. The electrical properties of an indium tin oxide (ITO)/SnOx/TaN device are examined, including the activation process, switching process, endurance (>102), and retention characteristics (104 s). A conduction mechanism for the resistive-switching process based on the migration of oxygen ions in the insulating SnOx film is proposed. Furthermore, the multilevel cell characteristics of the device, demonstrating the control of resistance states by variations in reset voltage and compliance current, were found to be suitable, increasing its data storage capacity. Synapse functions, including potentiation and depression, are tested, and their repeatability is evaluated. A neural network-based Modified National Institute Standards and Technology pattern recognition system is applied to the ITO/SnOx/TaN device, showcasing its capabilities in pattern recognition tasks. This study further explores various synapse functions, such as paired-pulse facilitation, paired-pulse depression, excitatory postsynaptic current, and activity-dependent synaptic plasticity. Hebbian learning rules, including spike rate-dependent plasticity, are demonstrated, along with spike time-dependent plasticity under various spike types, making it suitable for high-functionality neuromorphic applications. Finally, we assembled 3 × 3 synapse arrays and utilized them to form recognizable patterns, demonstrating the potential of the device in implementing neural network functions.

A Study on h‐BN Resistive Switching Temporal Response

AbstractPrevious work that studied hexagonal boron nitride (h‐BN) memristor DC resistive‐switching characteristics is extended to include an experimental understanding of their dynamic behavior upon programming or synaptic weight update. The focus is on the temporal resistive switching response to driving stimulus (programming voltage pulses) effecting conductance updates during training in neural network crossbar implementations. Test arrays are fabricated at the wafer level, enabled by the transfer of CVD‐grown few‐layer (8 layer) or multi‐layer (18 layer) h‐BN films. A comprehensive study of their temporal response under various conditions–voltage pulse amplitude, edge rate (pulse rise/fall times), and temperature–provides new insights into the resistive switching process toward optimized devices and improvements in their implementation of artificial neural networks. The h‐BN memristors can achieve multi‐state operation through ultrafast pulsed switching (< 25 ns) with high energy efficiency (≈10 pJ pulse−1).

Asymptotic optimality of a class of controlled non-Markov processes

Motivated by applications in power systems and problems arising in simulation of large scale complex system optimizations, this work is concerned with controlled stochastic switching systems. The system of interest displays a multi-time scale structure. In contrast to the so-called singularly perturbed diffusions and multi-scale Markov decision processes, controlled non-Markov processes (also known as non-Markov decision processes) are treated. The novelty of our work is the treatment of the non-Markov controlled processes and the time-scale used. The fast and slow processes are coupled through a stochastic differential equation. Using averaging, it is first shown that the non-Markov switching process has a weak limit that is a Markov decision process. Then asymptotic optimal control of the non-Markov process is obtained by using the limit process.

Design of gelatin-based bionic device for neural computing applications

This study introduces an approach to the development of resistive random-access memory (RRAM) devices by utilizing gelatin-based materials and incorporating an ultrathin Al2O3 interface layer fabricated using atomic layer deposition (ALD). The integration of the ALD technology for Al2O3 deposition ensures precise control over the layer thickness and quality, contributing to enhanced device uniformity and stability. The AGAI device can withstand more than 200 switching cycles while maintaining a high ON/OFF ratio exceeding 103, and it also successfully emulates synaptic plasticity characteristics, including long-term synaptic plasticity and short-term synaptic plasticity, as demonstrated by their responses to paired-pulse facilitation and paired-pulse depression, respectively, thereby validating their potential for neural computing applications. Additionally, the hybrid conduction mechanism in the AGAI device, involving aluminum and oxygen vacancy filaments, provides remarkable control over the switching process, leading to repeatability in synaptic characteristics and resistance states. These capabilities introduce new possibilities for the development of neuromorphic computing systems, which aim to mimic the functionality of the human brain in processing and storing information.

Bias polarity dependent low-frequency noise in ultra-thin AlOx-based magnetic tunnel junctions

We exploit bias polarity dependent low-frequency noise (LFN) spectroscopy to investigate charge transport dynamics in ultra-thin AlOx-based magnetic tunnel junctions (MTJs) with bipolar resistive switching (RS). By measuring the noise characteristics across the entire bias voltage range of bipolar RS, we find that the voltage noise level exhibits an bias polarity dependence. This distinct feature is intimately correlated with reconfiguring of the inherently existing oxygen vacancies (VO..\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${V}_{O}^{..}$$\\end{document}) in as-grown MTJ devices during the SET and RESET switching processes. In addition, we observe two-level random telegraph noise (RTN) with a longer and shorter tunneling length in the high resistance state (HRS) and low resistance state (LRS) at a low bias voltage. The intrinsic voltage fluctuations of RTN arise from the dynamics of electron trapping/de-trapping processes at the VO..\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${V}_{O}^{..}$$\\end{document}-related trap sites. Notably, the RTN magnitude is similar in LRS but nonidentical in that of HRS for different bias polarity. These findings strongly suggest that the inherent VO..\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${V}_{O}^{..}$$\\end{document} are distributed near the top CoFe/AlOx interface in the HRS; in contrast, they are expanded to the middle region of the AlOx in the LRS. More importantly, we demonstrate that the location and distribution of the inherent VO..\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${V}_{O}^{..}$$\\end{document} can be electrically tuned, which plays an essential role in the charge transport dynamics in the ultra-thin AlOx-based MTJs and have significant implications for developing emergent memory and logic devices.

Performance improvement of bilayer memristor based on hafnium oxide by Ti/W synergy and its synaptic behavior

Bilayer and multi-layer structures can effectively improve the performance of memristors, but the oxide/metal interface during the resistance switching process affects its reliability and stability. In this work, the Pt/HfO2/HfOx/W and Pt/HfO2/HfOx/Ti/W memristors with a homogeneous bilayer structure are compared to systematically investigate the effect of interface engineering on bilayer hafnium oxide devices by inserting Ti buffer layer to construct Ti/W composite electrode. Compared with the stimulated oxidation of the W electrode, the device under the synergy of Ti/W composite electrode showed better switching uniformity (The resistance of the high-resistance state and reset voltage variation coefficient decreased from 83.1 % to 31.9 % and from 9.5 % to 5.6 %, respectively.) and robust endurance (>104 cycles). Meanwhile, some essential synaptic behaviors such as nonlinear transmission characteristics, paired-pulse facilitation, and spike-timing-dependent plasticity were mimicked by using different pulse stimuli. Subsequently, the resistance switching mechanism of the device under the Ti/W synergy was explored by combining the results of I–V curve fitting and material analysis. These results provided important experimental guidance and a theoretical basis for further optimization of electrode interfacial effect in the future.