Switching Of Perpendicular Magnetization Research Articles

Field-free spin–orbit torque magnetization switching in Pt/CoTb devices grown on flexible substrates for neuromorphic computing

Flexible spintronic devices based on spin–orbit torque (SOT)-induced perpendicular magnetization switching (PMS) have attracted increasing attention due to their high storage intensity and good programming capability. However, to achieve deterministic PMS, an in-plane auxiliary magnetic field is required, which greatly limits its application. Here, we show that “robust” magnetic field-free SOT-driven PMS is realized in the oblique sputtered Pt/CoTb multilayers grown on a flexible polyimide substrate. “Robust” means the magnetic field-free SOT switching is highly repeatable and stable after 100 bending cycles under various bending conditions. Additionally, the fabricated flexible multilayers exhibit nearly linear and nonvolatile multistate plasticity as synapses and a nonlinear sigmoid activation function when acting as neurons. We construct a fully connected neural network for handwritten digit recognition, achieving an over 96.27% recognition rate. Our findings may spur further investigations on the SOT-based flexible spintronic devices for wearable artificial intelligence applications.

Field-Free Spin-Orbit Torque Switching in Janus Chromium Dichalcogenides.

We predict a very large spin-orbit torque (SOT) capability of magnetic chromium-based transition-metal dichalcogenide (TMD) monolayers in their Janus forms CrXTe, with X = S, Se. The structural inversion symmetry breaking, inherent to Janus structures is responsible for a large SOT response generated by giant Rashba splitting, equivalent to that obtained by applying a transverse electric field of ∼100 V nm-1 in non-Janus CrTe2, completely out of experimental reach. By performing transport simulations on carefully derived Wannier tight-binding models, Janus systems are found to exhibit an SOT performance comparable to the most efficient two-dimensional materials, while additionally allowing for field-free perpendicular magnetization switching, due to their reduced in-plane symmetry. Altogether, our findings evidence that magnetic Janus TMDs stand as suitable candidates for ultimate SOT-MRAM devices in an ultracompact self-induced SOT scheme.

Generation of out-of-plane polarized spin current by non-uniform oxygen octahedral tilt/rotation

The free-field switching of the perpendicular magnetization by the out-of-plane polarized spin current induced spin-orbit torque makes it a promising technology for developing high-density memory and logic devices. The materials intrinsically with low symmetry are generally utilized to generate the spin current with out-of-plane spin polarization. However, the generation of the out-of-plane polarized spin current by engineering the symmetry of materials has not yet been reported. Here, we demonstrate that paramagnetic CaRuO3 films are able to generate out-of-plane polarized spin current by engineering the crystal symmetry. The non-uniform oxygen octahedral tilt/rotation along film’s normal direction induced by oxygen octahedral coupling near interface breaks the screw-axis and glide-plane symmetries, which gives rise to a significant out-of-plane polarized spin current. This spin current can drive field-free spin-orbit torque switching of perpendicular magnetization with high efficiency. Our results offer a promising strategy based on crystal symmetry design to manipulate spin current and could have potential applications in advanced spintronic devices.

Perpendicular magnetization switching of RuO2(1 0 0)/[Pt/Co/Pt] multilayers

Current-induced perpendicular magnetization switching holds great potential for high-density magnetic storage technology. We report the growth of perpendicularly magnetized [Pt/Co/Pt] multilayers on a collinear altermagnet RuO2(100) thin films. The current-induced effective magnetic field was determined through anomalous Hall effect loop measurements with current applied along the [010] or [001] direction of RuO2(100). Magnetization switching was successfully achieved with the assistance of an in-plane magnetic field. Furthermore, by adjusting the nominal top Pt thickness of the [Pt/Co/Pt] multilayers, we could change the polarity of the current-induced magnetization switching, demonstrating an effective manipulation of spin polarization direction in RuO2/[Pt/Co/Pt]. These results provide a practical approach to the development of perpendicular magnetic devices based on RuO2 and have advanced the study of spin-splitting altermagnets.

Deterministic switching of perpendicular magnetization by out-of-plane anti-damping magnon torques.

Spin-wave excitations of magnetic moments (or magnons) can transport spin angular momentum in insulating magnetic materials. This property distinguishes magnonic devices from traditional electronics, where power consumption results from electrons' movement. Recently, magnon torques have been used to switch perpendicular magnetization in the presence of an external magnetic field. Here we present a material system composed of WTe2/antiferromagnetic insulator NiO/ferromagnet CoFeB heterostructures that allows magnetic field-free switching of the perpendicular magnetization. The magnon currents, with a spin polarization canting of -8.5° relative to the sample plane, traverse the 25-nm-thick polycrystalline NiO layer while preserving their original polarization direction, subsequently exerting an out-of-plane anti-damping magnon torque on the ferromagnetic layer. Using this mechanism, we achieve a 190-fold reduction in power consumption in PtTe2/WTe2/NiO/CoFeB heterostructures compared to Bi2Te3/NiO/CoFeB control samples, which only exhibit in-plane magnon torques. Our field-free demonstration contributes to the realization of all-electric, low-power, perpendicular magnetization switching devices.

Spin–orbit torque effect in silicon-based sputtered Mn3Sn film

Abstract Noncollinear antiferromagnet Mn3Sn has shown remarkable efficiency in charge–spin conversion, a novel magnetic spin Hall effect, and a stable topological antiferromagnetic state, which has resulted in great interest from researchers in the field of spin–orbit torque. Current research has primarily focused on the spin–orbit torque effect of epitaxially grown noncollinear antiferromagnet Mn3Sn films. However, this method is not suitable for large-scale industrial preparation. In this study, amorphous Mn3Sn films and Mn3Sn/Py heterostructures were prepared using magnetron sputtering on silicon substrates. The spin-torque ferromagnetic resonance measurement demonstrated that only the conventional spin–orbit torque effect generated by in-plane polarized spin currents existed in the Mn3Sn/Py heterostructure, with a spin–orbit torque efficiency of 0.016. Additionally, we prepared the perpendicular magnetized Mn3Sn/CoTb heterostructure based on amorphous Mn3Sn film, where the spin–orbit torque driven perpendicular magnetization switching was achieved with a lower critical switching current density (3.9×107 A/cm2) compared to Ta/CoTb heterostructure. This research reveals the spin–orbit torque effect of amorphous Mn3Sn films and establishes a foundation for further advancement in the practical application of Mn3Sn materials in spintronic devices.

Realization of logic operations via spin–orbit torque driven perpendicular magnetization switching in a heavy metal/ferrimagnet bilayer

Programmable and non-volatile spin-based logic devices have attracted significant interest for use in logic circuits. Realization of logic operations via spin–orbit torque (SOT) driven magnetization switching could be a crucial step in the direction of building logic-in-memory architectures. In this work, we demonstrate experimentally, the realization of four logic operations in a heavy metal/ferrimagnet bilayer structure via SOT switching. We also propose a general scheme for choosing input parameters to achieve programmable logic operations. The bulk and tunable perpendicular magnetic anisotropy and relatively lower saturation magnetization in ferrimagnets are found to make them more energy efficient in performing logic operations, as compared to conventional ferromagnets. Thus, ferrimagnets are promising candidates for use in logic-in-memory architectures, leading to the realization of user-friendly spin logic devices in the future.

Field-Free Spin-Orbit Torque Magnetization Switching in a Single-Phase Ferromagnetic and Spin Hall Oxide.

Current-induced spin-orbit torque (SOT) offers substantial promise for the development of low-power, nonvolatile magnetic memory. Recently, a single-phase material concurrently exhibiting magnetism and the spin Hall effect has emerged as a scientifically and technologically interesting platform for realizing efficient and compact SOT systems. Here, we demonstrate external-magnetic-field-free switching of perpendicular magnetization in a single-phase ferromagnetic and spin Hall oxide SrRuO3. We delicately altered the local lattices of the top and bottom surface layers of SrRuO3, while retaining a quasi-homogeneous, single-crystalline nature of the SrRuO3 bulk. This leads to unbalanced spin Hall effects between the top and bottom layers, enabling net SOT performance within single-layer ferromagnetic SrRuO3. Notably, our SrRuO3 exhibits the highest SOT efficiency and lowest power consumption among all known single-layer systems under field-free conditions. Our method of artificially manipulating the local atomic structures will pave the way for advances in spin-orbitronics and the exploration of new SOT materials.

Neuromorphic Computing in Synthetic Antiferromagnets by Spin‐Orbit Torque Induced Magnetic‐Field‐Free Magnetization Switching

AbstractSynthetic antiferromagnet (SAF) with high thermal stability, ultra‐fast spin dynamics, and highly efficient spin‐orbit torque switching has great application potential in neuromorphic computing hardware. However, two challenges, the weakening of Hall signal in the remanent state and the need for a large auxiliary magnetic field for perpendicular magnetization switching, greatly limit the advantages of SAF in neuromorphic computing. In this work, both the enhanced anomalous Hall resistance and magnetic‐field‐free perpendicular magnetization switching are achieved by using oblique sputtering to fabricate the Pt/CoPt/Ru/CoTb SAF with strong interlayer exchange coupling and magnetic moment compensation. The fabricated SAF as synapse shows nearly linear, nonvolatile multistate plasticity, and as neuron exhibits a nonlinear sigmoid activation function, which are used to construct a fully connected neural network with a remarkable 97.0–98.1% recognition rate for the handwritten digits. Additionally, SAF serving as spike‐timing‐dependent plasticity synapse is used to construct an adaptive, unsupervised learning spiking neural network, and achieve an 87.0% accuracy in handwritten digit recognition. The findings exhibit the promise of SAFs as specialized hardware for high‐performance neuromorphic computing, offering high recognition rates and low power consumption.

Perpendicular magnetic properties and field-free current-induced switching in W/CoFeB/MgO trilayers with a compensating oblique W underlayer

Zero-field magnetization switching (ZFS) driven by current-induced spin–orbit torque (SOT) holds significant importance in spintronic applications. The introduction of a lateral asymmetric structure (LAS) through oblique deposition proves to be an effective strategy for breaking inversion symmetry, thereby enabling SOT-driven ZFS. However, the coexistence of wedge thickness structure and slanted columnar microstructure in the obliquely deposited films poses challenges in distinguishing their respective effects. In this study, we conducted a comparative investigation of the perpendicular magnetic properties and current-induced switching in W/Co40Fe40B20/MgO films by oblique sputtering of the W underlayer at a fixed tilting angle and at two opposite tilting angles with its wedge thickness compensated. We have found that the perpendicular magnetic properties of the Co40Fe40B20 layer are significantly altered at large tilting angles, irrespective of whether the W wedge thickness is compensated. Notably, at a tilting angle of 50°, ZFS is realized for both the conventional oblique sample and the compensating oblique sample, with the switching polarity contingent on the final tilting direction of the W layer. We have identified a gradient in perpendicular magnetic anisotropy in these samples, attributed to the laterally varying roughness associated with the slanted columnar microstructure of the W underlayer. This study underscores the dominant role of microscopic LAS in obliquely deposited films in breaking SOT symmetry. Our research sheds light on the impact of the slanted columnar microstructure on the magnetic and magneto-transport properties of films, offering valuable insights for advancing spintronic device research.

Modulation of switching current density in T-type magnetic structure through magnetic anisotropy

We investigate magnetic field driven domain wall motion and spin-orbit torque (SOT) induced perpendicular magnetization switching of the ferrimagnetic layer in a T-type magnetic heterojunction with the structure of Pt/Co/Ta/Co81Tb19/Ta, where the bottom Co layer has in-plane magnetic anisotropy and the top Co81Tb19 layer has perpendicular magnetic anisotropy. It is found that the magnetic field driven domain wall motion and the depinning field of the Co81Tb19 layer can be effectively tuned by the thickness of the Co layer (tCo). Meanwhile, SOT-induced perpendicular magnetization switching of the Co81Tb19 layer is observed, and the critical switching current density first decreases and then increases with increasing the thickness of the Co layer. A lower critical switching current density was obtained at the optimized thickness (tCo = 1.2 nm), resulting in a 37% reduction in critical switching current density. Meanwhile, the research reveals a strong correlation between critical switching current density and magnetic anisotropy field, indicating that tuning the magnetic anisotropy is an efficient way to modulate the switching current density in a T-type magnetic structure. These results provide a new perspective on SOT manipulation and will be useful for the design of SOT-based devices.

Asymmetric magnetization switching and programmable complete Boolean logic enabled by long-range intralayer Dzyaloshinskii-Moriya interaction

After decades of efforts, some fundamental physics for electrical switching of magnetization is still missing. Here, we report the discovery of the long-range intralayer Dzyaloshinskii-Moriya interaction (DMI) effect, which is the chiral coupling of orthogonal magnetic domains within the same magnetic layer via the mediation of an adjacent heavy metal layer. The effective magnetic field of the long-range intralayer DMI on the perpendicular magnetization is out-of-plane and varies with the interfacial DMI constant, the applied in-plane magnetic fields, and the magnetic anisotropy distribution. Striking consequences of the effect include asymmetric current/field switching of perpendicular magnetization, hysteresis loop shift of perpendicular magnetization in the absence of in-plane direct current, and sharp in-plane magnetic field switching of perpendicular magnetization. Utilizing the intralayer DMI, we demonstrate programable, complete Boolean logic operations within a single spin-orbit torque device. These results will stimulate investigation of the long-range intralayer DMI effect in a variety of spintronic devices.

Field-free control and switching of perpendicular magnetization by voltage induced manipulation of RKKY interaction

Voltage control of magnetization offers substantial advantages in energy efficiency for the development of spintronics technology. However, achieving a complete 180° magnetization switching remains as a challenging task since the electric field cannot provide torques to turn the magnetic moment in the ferromagnetic material. To address this challenge, we explore the utilization of synthetic antiferromagnetic (sAFM) structure coupled by Ruderman–Kittel–Kasuya–Yosida (RKKY) interaction in the two ferromagnetic (FM) Co layers separated by a suitable thickness Ru spacer layer. One of the FM layers was prepared to be in contact with the GdOx layer, where ionic motion of oxygen can be manipulated via an application of electric field. Depending on the oxidation state at the interface with GdOx, the RKKY coupling can be adjusted and achieves reversible transitions between antiferromagnetic (AFM) and FM orders of FM layers at room temperature. The transition is mediated by the migration and redistribution of oxygen ions, transforming the Co/Gd interface into Co/GdOx and vice versa. This method suggests a stable and electrical route for magnetization reversals without an external magnetic field.

Field-free magnetization switching with full scale in Pt/Tm3Fe5O12 bilayer on vicinal substrate

The spin–orbit torques within a Pt/Tm3Fe5O12 (TmIG) bilayer offer an expedient method for manipulating the magnetization of TmIG. However, the practical application of TmIG is hindered by the presence of an external field during switching. Here, we demonstrate field-free magnetization switching in Pt/TmIG bilayer on a vicinal substrate with minimal sacrifice to the perpendicular magnetic anisotropy (PMA) of TmIG. With the assistance of tilt PMA, reversible perpendicular magnetization switching is realized in the absence of an external field. Our results offer an alternative solution for achieving field-free perpendicular magnetization switching in a Pt/TmIG bilayer, thereby fostering the advancement of emerging SOT-based devices.

Field-Free Switching of Perpendicular Magnetization in an Ultrathin Epitaxial Magnetic Insulator.

For energy-efficient magnetic memories, switching of perpendicular magnetization by spin-orbit torque (SOT) appears to be a promising solution. This SOT switching requires the assistance of an in-plane magnetic field to break the symmetry. Here, we demonstrate the field-free SOT switching of a perpendicularly magnetized thulium iron garnet (Tm3Fe5O12, TmIG). The polarity of the switching loops, clockwise or counterclockwise, is determined by the direction of the initial current pulses, in contrast with field-assisted switching where the polarity is controlled by the direction of the magnetic field. From Brillouin light scattering, we determined the Dzyaloshinskii-Moriya interaction (DMI) induced by the Pt-TmIG interface. We will discuss the possible origins of field-free switching and the roles of the interfacial DMI and cubic magnetic anisotropy of TmIG. This discussion is substantiated by magnetotransport, Kerr microscopy, and micromagnetic simulations. Our observation of field-free electrical switching of a magnetic insulator is an important milestone for low-power spintronic devices.

Field‐Free Switching of Magnetization in Oxide Superlattice by Engineering the Interfacial Reconstruction

AbstractSpin‐orbit torque resulting from non‐magnetic materials with strong spin‐orbit coupling enables electrically controlled magnetization switching, offering potential applications in ultralow‐power memory and logic devices. However, such switching of perpendicular magnetization usually requires an in‐plane magnetic field along the applied current direction, which limits its use. To address this challenge, an all‐oxide superlattice is designed and fabricated that show both the perpendicular magneto‐crystalline anisotropy and in‐plane magnetic anisotropies induced by interfacial engineering. The results demonstrate that the coexistence of perpendicular and in plane magnetic anisotropy breaks the symmetry and thus enables the pure electrical switching of perpendicular magnetization.

Field-free switching of perpendicular magnetization by two-dimensional PtTe2/WTe2 van der Waals heterostructures with high spin Hall conductivity.

The key challenge of spin-orbit torque applications lies in exploring an excellent spin source capable of generating out-of-plane spins while exhibiting high spin Hall conductivity. Here we combine PtTe2 for high spin conductivity and WTe2 for low crystal symmetry to satisfy the above requirements. The PtTe2/WTe2 bilayers exhibit a high in-plane spin Hall conductivity σs,y ≈ 2.32 × 105 × ħ/2e Ω-1 m-1 and out-of-plane spin Hall conductivity σs,z ≈ 0.25 × 105 × ħ/2e Ω-1 m-1, where ħ is the reduced Planck's constant and e is the value of the elementary charge. The out-of-plane spins in PtTe2/WTe2 bilayers enable the deterministic switching of perpendicular magnetization at room temperature without magnetic fields, and the power consumption is 67 times smaller than that of the Pt control case. The high out-of-plane spin Hall conductivity is attributed to the conversion from in-plane spin to out-of-plane spin, induced by the crystal asymmetry of WTe2. Our work establishes a low-power perpendicular magnetization manipulation based on wafer-scale two-dimensional van der Waals heterostructures.

The central role of tilted anisotropy for field-free spin–orbit torque switching of perpendicular magnetization

The discovery of efficient magnetization switching upon device activation by spin Hall effect (SHE)-induced spin–orbit torque (SOT) changed the course of magnetic random-access memory (MRAM) research and development. However, for electronic systems with perpendicular magnetic anisotropy (PMA), the use of SOT is still hampered by the necessity of a longitudinal magnetic field to break magnetic symmetry and achieve deterministic switching. In this work, we demonstrate that robust and tunable field-free current-driven SOT switching of perpendicular magnetization can be controlled by the growth protocol in Pt-based magnetic heterostructures. We further elucidate that such growth-dependent symmetry breaking originates from the laterally tilted magnetic anisotropy of the ferromagnetic layer with PMA, a phenomenon that has been largely neglected in previous studies. We show experimentally and in simulation that in a PMA system with tilted anisotropy, the deterministic field-free switching exhibits a conventional SHE-induced damping-like torque feature, and the resulting current-induced effective field shows a nonlinear dependence on the applied current density. This relationship could be potentially misattributed to an unconventional SOT origin.

Wedge-shaped HfO2 buffer layer-induced field-free spin-orbit torque switching of HfO2/Pt/Co structure

Field-free spin–orbit torque (SOT) switching of perpendicular magnetization is essential for future spintronic devices. This study demonstrates the field-free switching of perpendicular magnetization in an HfO2/Pt/Co/TaO x structure, which is facilitated by a wedge-shaped HfO2 buffer layer. The field-free switching ratio varies with HfO2 thickness, reaching optimal performance at 25 nm. This phenomenon is attributed to the lateral anisotropy gradient of the Co layer, which is induced by the wedge-shaped HfO2 buffer layer. The thickness gradient of HfO2 along the wedge creates a corresponding lateral anisotropy gradient in the Co layer, correlating with the switching ratio. These findings indicate that field-free SOT switching can be achieved through designing buffer layer, offering a novel approach to innovating spin–orbit device.

Electric-Field Control of Perpendicularly Magnetized Ferrimagnetic Order and Giant Magnetoresistance in Multiferroic Heterostructures.

Electrical control of magnetism is highly desirable for energy-efficient spintronic applications. Realizing electric-field-driven perpendicular magnetization switching has been a long-standing goal, which, however, remains a major challenge. Here, electric-field control of perpendicularly magnetized ferrimagnetic order via strain-mediated magnetoelectric coupling is reported. We show that the gate voltages isothermally toggle the dominant magnetic sublattice of the compensated ferrimagnet FeTb at room temperature, showing high reversibility and good endurance under ambient conditions. By implementing this strategy in FeTb/Pt/Co spin valves with giant magnetoresistance (GMR), we demonstrate that the distinct high and low resistance states can be selectively controlled by the gate voltages with assisting magnetic fields. Our results provide a promising route to use ferrimagnets for developing electric-field-controlled, low-power memory and logic devices.