Suspended Spiral Inductor Research Articles

Design and Analysis of a Micromachined LC Low Pass Filter For 2.4GHz Application

This paper reports design and analysis of a passive low pass filter with cut-off frequency of 2.4 GHz using MEMS (Micro Electro-Mechanical Systems) technology. The passive components such as suspended spiral inductors and metal-insulator-metal (MIM) capacitor are arranged in T network form to implement LC low pass filter design. This design employs a simple approach of suspension thereby reducing parasitic losses to eliminate the performance degrading effects caused by integrating an off-chip inductor in the filter circuit proposed to be developed on a low cost silicon substrate using RF-MEMS components. The filter occupies only 2.1 mm x 0.66 mm die area and is designed using micro-strip transmission line placed on a silicon substrate. The design is implemented in High Frequency Structural Simulator (HFSS) software and fabrication flow is proposed for its implementation. The simulated results show that the design has an insertion loss of -4.98 dB and return loss of -2.60dB.

High performance suspended spiral inductor and band-pass filter by wafer level packaging technology

Suspended inductors and 2.45 GHz BPF with patterned ground shields on the lossy silicon substrate by using Cu/BCB based wafer level packaging and bulk Si etching technologies were fabricated. Thick BCB interlayer is used as the supporting dielectric and the backside cavity is easily removed by using a two-step back-etching process. The fabricated 2.7 nH inductor has a maximum Q factor 49 at 8.2 GHz and high Q factors more than 22 in the broadband frequency range from 1 to 10 GHz. And the realized 2.45 GHz BPF has the insertion loss of 3.0 dB and the return loss of more than 14 dB at the pass band. It is also featured by more than 48 and 25 dB attenuation at 0.9 and 1.8 GHz respectively, with the second harmonic rejection being 33 dB.

RF Performances of MEMS Suspended Inductor under High Overload Environments

The radio frequency (RF) performances of MEMS suspended spiral inductor under high overload environments are studied. Firstly, a suspended spiral inductor and its MEMS surface micromachining process which is compatible with CMOS process are developed. Then, the mechanical responses and RF performances of the inductor are simulated by ANSYS and HFSS, respectively. The simulation results show that, as the overload increases, the inductance and quality factor decrease significantly when the frequency band is closed to the resonant frequency but have no significant change when the frequency band is much lower than resonant frequency; the resonant frequency of the suspended inductor decreases monotonically with the increase of overload. A modified lumped parameter model is utilized to illustrate the simulation results, which theoretically indicates that the substrate loss is more severe than the ohmic loss as the overload increases.

ANALYTICAL OPTIMIZATION OF HIGH PERFORMANCE AND HIGH QUALITY FACTOR MEMS SPIRAL INDUCTOR

In this paper, design and simulation of optimized MEMS spiral inductor are presented. The efiects of design parameters on characteristics of inductor have been considered. The suspended spiral inductor was designed on silicon substrate using MEMS technology to reduce the metal and substrate losses of inductor. The results show that the quality factor of the inductor is 27 at 5.23GHz and that the maximum Q-factor is 42 at 26.56GHz. The dimension of the inductor is 185 £ 200m 2 , which occupies less area on chip than other works. In this work, the high quality factor inductor with small size is obtained.

Manufacture and Characterization of High Q-Factor Inductors Based on CMOS-MEMS Techniques

A high Q-factor (quality-factor) spiral inductor fabricated by the CMOS (complementary metal oxide semiconductor) process and a post-process was investigated. The spiral inductor is manufactured on a silicon substrate. A post-process is used to remove the underlying silicon substrate in order to reduce the substrate loss and to enhance the Q-factor of the inductor. The post-process adopts RIE (reactive ion etching) to etch the sacrificial oxide layer, and then TMAH (tetramethylammonium hydroxide) is employed to remove the silicon substrate for obtaining the suspended spiral inductor. The advantage of this post-processing method is its compatibility with the CMOS process. The performance of the spiral inductor is measured by an Agilent 8510C network analyzer and a Cascade probe station. Experimental results show that the Q-factor and inductance of the spiral inductor are 15 at 15 GHz and 1.8 nH at 1 GHz, respectively.

Substrates and dimension dependence of MEMS inductors

In this work, the effects of metal dimension and substrates on the characteristics of MEMS inductors have been studied. The suspended spiral inductors were fabricated by MEMS technologies with microelectroplating and thick film photolithography. The inductors were suspended by 20 µm over the substrate to reduce the substrate coupling loss and designed a 10 µm thick metal layer to reduce the ohmic loss. We also characterized the properties of inductors according to the substrates, the size of gap between the inductor metal lines and the width of the inductor metal lines. The measured quality factor of inductors fabricated on a silicon substrate was over 20 at 2 GHz. The inductors were also fabricated and measured on various substrates such as high resistive silicon, glass and quartz wafers. The quality factor of the inductor fabricated on the glass substrate was almost 30 at 4 GHz and that of the inductor fabricated on the quartz wafer was over 40 at the same frequency region. Substrate resistance and the dimension of metal are factors important to the inductor performance.

Fabrication and performance of a novel suspended RF spiral inductor

A novel suspended radio frequency (RF) spiral inductor was fabricated on glass substrate by using the microelectromechanical systems (MEMS) technology. The suspended spiral inductor is sustained with the T-shaped pillars. Great improvements in Q-factor have been achieved because of the separation between the substrate and the inductor. In the fabrication process, fine polishing of the photoresist is used to simplify the processes and ensure the seed layer and the pillars contact perfectly, and dry etching technique is used to remove the seed layer. The inductance and Q-factor are measured using the HP 8722D network analyzer in the frequency range of 0.05-10 GHz. The maximum quality factor of this inductor is 37 for the inductance of 4.2 nH with a suspended height of 60 /spl mu/m. Also, the relationship between the maximum quality factor and the suspended height were studied; the maximum quality factor grows gradually with the increase of the suspended height.

Design and Fabrication of Deep Submicron CMOS Technology Compatible Suspended High-Q Spiral Inductors

In this paper, deep submicron complementary metal-oxide-semiconductor (CMOS) process compatible high-Q suspended spiral on-chip inductors were designed and fabricated. In the design, the electromagnetic solver, SONNET, and the finite element program, ANSYS, were used for electrical characteristics, maximum endurable impact force, and thermal conduction simulations, respectively. Based on the design, suspended spiral inductors with different air cavity structures, i.e., diamond opening, circle opening, triangle opening, and full suspended with pillar supports were developed for various applications. Among these structures, the suspended inductor with pillar support possesses the highest Q/sub max/ (maximum of quality factor) of 6.6 at 2 GHz, the least effective dielectric constant of 1.06, and the lowest endurable impact force 0.184 Newton. On the other hand, the spiral inductor with diamond opening has a lowest Q/sub max/ of 4.3, the largest effective dielectric constant of 3.44 and highest endurable impact force 4 Newton. The former is suitable for station telecommunication applications in which the mechanical vibration is not a serious concern, while the latter can be used for mobile telecommunication applications subject to strong mechanical vibrations. Additionally, the conventional on-chip spiral inductor embraced by SiO/sub 2/ with a dielectric constant of 4 was prepared for comparison and found its Q/sub max/ is 3.8 at 1.2 GHz.

CMOS-compatible surface-micromachined suspended-spiral inductors for multi-GHz silicon RF ICs

Fully CMOS-compatible, highly suspended spiral inductors have been designed and fabricated on standard silicon substrates (1/spl sim/30 /spl Omega//spl middot/cm in resistivity) by surface micromachining technology (no substrate etch involved). The RF characteristics of the fabricated inductors have been measured and their equivalent circuit parameters have been extracted using a conventional lumped-element model. We have achieved a high peak Q-factor of 70 at 6 GHz with inductance of 1.38 nH (at 1 GHz) and a self-resonant frequency of over 20 GHz. To the best of our knowledge, this is the highest Q-factor ever reported on standard silicon substrates. This work has demonstrated that the proposed microelectromechanical systems (MEMS) inductors can be a viable technology option to meet the today's strong demands on high-Q on-chip inductors for multi-GHz silicon RF ICs.

On-chip spiral inductors suspended over deep copper-lined cavities

A silicon micromachining method has been developed to fabricate on-chip high-performance suspended spiral inductors. The spiral structure of an inductor was formed with polysilicon and was suspended over a 30-/spl mu/m-deep cavity in the silicon substrate beneath. Copper (Cu) was electrolessly plated onto the polysilicon spiral to achieve low resistance. The Cu plating process also metallized the inner surfaces of the cavity, forming both a good radio-frequency (RF) ground and an electromagnetic shield. High quality factors (Qs) over 30 and self-resonant frequencies higher than 10 GHz have been achieved. A study of the mechanical properties of the suspended inductors indicates that they can withstand large shock and vibration. Simulation predicts a reduction of an order of magnitude in the mutual inductance of two adjacent inductors with the 30-/spl mu/m-deep Cu-lined cavity from that with silicon as the substrate. This indicates very small crosstalk between the inductors due to the shielding effect of the cavities.