Abstract
In this paper, design and simulation of optimized MEMS spiral inductor are presented. The efiects of design parameters on characteristics of inductor have been considered. The suspended spiral inductor was designed on silicon substrate using MEMS technology to reduce the metal and substrate losses of inductor. The results show that the quality factor of the inductor is 27 at 5.23GHz and that the maximum Q-factor is 42 at 26.56GHz. The dimension of the inductor is 185 £ 200m 2 , which occupies less area on chip than other works. In this work, the high quality factor inductor with small size is obtained.
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