Surface Of Topological Insulator Research Articles

Large bilinear magnetoresistance from Rashba spin-splitting on the surface of a topological insulator

In addition to the topologically protected linear dispersion, a band-bending-confined two-dimensional electron gas with tunable Rashba spin-splitting (RSS) was found to coexist with the topological surface states on the surface of topological insulators (TIs). Here, we report the observation of large bilinear magnetoresistance (BMR) in Bi2Se3 films decorated with transition metal atoms. The magnitude of the BMR sensitively depends on the type and amount of atoms deposited, with a maximum achieved value close to those of strong Rashba semiconductors. Our first-principles calculations reproduce the quantum well states and reveal sizable RSS in all Bi2Se3 heterostructures with broken inversion symmetry. Our results show that charge-spin interconversion through RSS states in TIs can be fine-tuned through surface atom deposition and easily detected via BMR for potential spintronic applications.

Spin-orbit torques due to extrinsic spin-orbit scattering of topological insulator surface states: out-of-plane magnetization

The origins of the spin-orbit torque (SOT) at ferromagnet/topological insulator interfaces are incompletely understood. The theory has overwhelmingly focussed on the Edelstein effect due to the surface states in the presence of a scalar scattering potential. We investigate here the contribution to the SOT due to extrinsic spin-orbit (SO) scattering of the surface states, focusing on the case of an out-of-plane magnetization. We show that SO scattering brings about a sizable renormalization of the field-like SOT, which exceeds 20 at larger strengths of the extrinsic SO parameter. The resulting SOT exhibits a maximum as a function of the Fermi energy, magnetization, and extrinsic SO strength. The field-like SOT decreases with increasing disorder strength, while the damping-like SOT is independent of the impurity density. With experimental observation in mind we also determine the role of extrinsic SO scattering on the anomalous Hall effect. Our results suggest extrinsic SO scattering is a significant contributor to the surface SOT stemming from the Edelstein effect when the magnetization is out of the plane.

A spintronic analog of the Landauer residual resistivity dipole on the surface of a topological insulator containing a line defect *

The Landauer ‘residual resistivity dipole’ is a well-known concept in electron transport through a disordered medium. It is formed when a defect/scatterer reflects an impinging electron causing negative charges to build up on one side of the scatterer and positive charges on the other. This charge imbalance results in the formation of a microscopic electric dipole that affects the electrical resistivity of the medium. Here, we show that an equivalent entity forms in spin polarized electron transport on the surface of a real topological insulator (TI) such as Bi2Te3 containing a line defect. When electrons reflect from such a scatterer, a local spin imbalance forms owing to spin accumulation on one side and depletion on the other side of the scatterer, resulting in a spin current that flows either in the same or in the opposite direction as the injected spin current, and hence, either decreases or increases the spin resistivity. Spatially varying local magnetic fields appear in the vicinity of the scatter, which will cause transiting spins to precess and emit electromagnetic waves. If the current injected into the TI is an alternating current, then the magnetic field’s polarity will oscillate in time with the frequency of the current and if the spins can follow quasi-statically, then they will radiate electromagnetic waves of the same frequency, thereby making the scatterer act as a miniature antenna.

Skyrmion nucleation on the surface of a topological insulator

Skyrmion nucleation induced by spin-transfer torques at an interface of a topological insulator and a ferromagnetic insulator is investigated. Due to strong spin-orbit coupling on a surface of topological insulators, which enhances the effect of spin torques, efficient manipulation of skyrmions is expected, and therefore, topological insulators could provide the ideal platform to achieve high-performance skyrmionic devices. Using micromagnetic simulations and energetics, we evaluate properties of the skyrmion nucleation on a surface of topological insulators, such as nucleation time, critical electric field, and skyrmion numbers. We show that the nucleation time is inversely proportional to the applied electric field. We also identify the Gilbert damping and temperature dependencies of the critical field. Furthermore, we analytically evaluate the effect of the Dzyaloshinskii-Moriya interaction and demonstrate that the temperature dependence can be explained by the reduction of a magnon excitation gap due to the self-energy corrections.

Momentum-inversion symmetry breaking on the Fermi surface of magnetic topological insulators

Magnetic topological insulators (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_n$ were anticipated to exhibit magnetic energy gaps while recent spectroscopic studies did not observe them. Thus, magnetism on the surface is under debate. In this work, we propose another symmetry criterion to probe the surface magnetism. Because of both time-reversal symmetry-breaking and inversion symmetry-breaking, we demonstrate that the surface band structure violates momentum-inversion symmetry and leads to a three-fold rather than six-fold rotational symmetry on the Fermi surface if corresponding surface states couple strongly to the surface magnetism. Such a momentum-inversion symmetry violation is significant along the $\Gamma-K$ direction for surface bands on the (0001) plane.

Spin-polarization of topological crystalline and normal insulator Pb[formula omitted]Sn[formula omitted]Se (111) epilayers probed by photoelectron spectroscopy

The helical spin texture on the surface of topological crystalline insulators (TCI) makes these materials attractive for application in spintronics. In this work, spin-polarization and electronic structure of surface states of (111)-oriented Pb1−xSnxSe TCI epitaxial films are examined by angle- as well as spin-resolved photoemission spectroscopy (SR-ARPES). High-quality epilayers with various Sn content are grown by the molecular beam epitaxy (MBE) method. Topological-normal insulator transition manifesting itself as band gap opening is observed. It is shown that the gap opening can be induced not only by changing the Sn content of the epilayer but also depositing a transition metal (TM) on its surface. In the latter case, the observed gaping of the surface states is caused by change in surface composition and not by magnetism. We also show that helical spin polarization is present not only for samples of topological composition but also for trivial ones (with an open band gap). The observed spin polarization reaches a value of 30% for the in-plane spin component and is almost absent for the out-of-plane one. We believe that our work will pave the way for the application of surface states not only of topological but also normal insulators based on lead–tin chalcogenides in spin-charge conversion devices.

Revealing Intrinsic Superconductivity of the Nb/BiSbTe2Se Interface

AbstractTypically, topological superconductivity is reachable via proximity effect by a direct deposition of superconductor (S) on top of a topological insulator (TI) surface. Here, the double critical current in the Josephson junctions based on the topological insulator is observed in the fabricated planar Superconducting Quantum Interference Devicea. By measuring critical currents as a function of temperature and magnetic field, it is shown that the second critical current stems from the intrinsic superconductivity of the S–TI interface, which is supported by the modified Resistively Shunted Junction model and Transmission Electron Microscopy studies. This complex structure of the interface should be taken into account when the technological process involves Ar‐plasma cleaning.

Interface Engineering Enabled Low Temperature Growth of Magnetic Insulator on Topological Insulator

AbstractCombining topological insulators (TIs) and magnetic materials in heterostructures is crucial for advancing spin‐based electronics. Magnetic insulators (MIs) can be deposited on TIs using the spin‐spray process, which is a unique nonvacuum, low‐temperature growth process. TIs have highly reactive surfaces that oxidize upon exposure to atmosphere, making it challenging to grow spin‐spray ferrites on TIs. In this work, it is demonstrated that a thin titanium capping layer on TI, followed by oxidation in atmosphere to produce a thin TiOx interfacial layer, protects the TI surface, without significantly compromising spin transport from the magnetic material across the TiOx to the TI surface states. First, it is demonstrated that in Bi2Te3/TiOx/Ni80Fe20 heterostructures, TiOx provides an excellent barrier against diffusion of magnetic species, yet maintains a large spin‐pumping effect. Second, the TiOx is also used as a protective capping layer on Bi2Te3, followed by the spin‐spray growth of the MI, NixZnyFe2O4 (NZFO). For the thinnest TiOx barriers, Bi2Te3/TiOx/NZFO samples have antiferromagnetic (AFM) disordered interfacial layer because of diffusion. With increasing TiOx barrier thickness, the diffusion is reduced, but still maintains strong interfacial magnetic exchange‐interaction. These experimental results demonstrate a novel method of low‐temperature growth of magnetic insulators on TIs enabled by interface engineering.

Observation of nonlinear planar Hall effect in magnetic-insulator–topological-insulator heterostructures

Interfacing topological insulators (TIs) with magnetic insulators (MIs) has been widely used to study the interaction between topological surface states and magnetism. Previous transport studies typically interpret the suppression of weak antilocalization or appearance of the anomalous Hall effect as signatures of magnetic proximity effect (MPE) imposed to TIs. Here, we report the observation of nonlinear planar Hall effect (NPHE) in Bi2Se3 films grown on MI thulium and yttrium iron garnet (TmIG and YIG) substrates, which is an order of magnitude larger than that in Bi2Se3 grown on nonmagnetic gadolinium gallium garnet (GGG) substrate. The nonlinear Hall resistance in TmIG/Bi2Se3 depends linearly on the external magnetic field, while that in YIG/Bi2Se3 exhibits an extra hysteresis loop around zero field. The magnitude of the NPHE is found to scale inversely with carrier density. We speculate the observed NPHE is related to the MPE-induced exchange gap opening and out-of-plane spin textures in the TI surface states, which may be used as an alternative transport signature of the MPE in MI/TI heterostructures.

Collective Spin Modes in Fermi Liquids with Spin–Orbit Coupling

A combination of spin-orbit coupling and electron-electron interaction gives rise to a new type of collective spin modes, which correspond to oscillations of magnetization even in the absence of the external magnetic field. We review recent progress in theoretical understanding and experimental observation of such modes, focusing on three examples of real-life systems: a two-dimensional electron gas with Rashba and/or Dresselhaus spin-orbit coupling, graphene with proximity-induced spin-orbit coupling, and the Dirac state on the surface of a three-dimensional topological insulator. This paper is dedicated to the 95th birthday of Professor Emmanuel I. Rashba.

Nanometric Moiré Stripes on the Surface of Bi2Se3 Topological Insulator.

Mismatch between adjacent atomic layers in low-dimensional materials, generating moiré patterns, has recently emerged as a suitable method to tune electronic properties by inducing strong electron correlations and generating novel phenomena. Beyond graphene, van der Waals structures such as three-dimensional (3D) topological insulators (TIs) appear as ideal candidates for the study of these phenomena due to the weak coupling between layers. Here we discover and investigate the origin of 1D moiré stripes on the surface of Bi2Se3 TI thin films and nanobelts. Scanning tunneling microscopy and high-resolution transmission electron microscopy reveal a unidirectional strained top layer, in the range 14–25%, with respect to the relaxed bulk structure, which cannot be ascribed to the mismatch with the substrate lattice but rather to strain induced by a specific growth mechanism. The 1D stripes are characterized by a spatial modulation of the local density of states, which is strongly enhanced compared to the bulk system. Density functional theory calculations confirm the experimental findings, showing that the TI surface Dirac cone is preserved in the 1D moiré stripes, as expected from the topology, though with a heavily renormalized Fermi velocity that also changes between the top and valley of the stripes. The strongly enhanced density of surface states in the TI 1D moiré superstructure can be instrumental in promoting strong correlations in the topological surface states, which can be responsible for surface magnetism and topological superconductivity.

Ac Josephson effect in Corbino-geometry Josephson junctions constructed on Bi2Te3 surface

Recently, a Corbino-geometry type of Josephson junction constructed on the surface of topological insulators has been proposed for hosting and braiding Majorana zero modes. As a first step to test this proposal, we successfully fabricated Corbino-geometry Josephson junctions (JJs) on the surface of Bi2Te3 flakes. Ac Josephson effect with fractional Shapiro steps was observed in the Corbino-geometry JJs while the flux in the junction area was quantized. By analyzing the experimental data using the resistively shunted Josephson junction model, we found that the Corbino-geometry JJs exhibit a skewed current–phase relation due to its high transparency. The results suggest that Corbino-geometry JJs constructed on the surface of topological insulators may provide a promising platform for studying Majorana-related physics.

Optical conductivity of ultrathin Floquet topological insulators

In this paper, we theoretically investigate the topological aspects of a 3D ultrathin topological insulator in the presence of an irradiated off-resonant circularly-polarized light field. Based on the Floquet formalism we treat the light field as an external perturbation which introduces an effective energy term in the system Hamiltonian and hence, gives mass to the massless Dirac fermions at the surfaces of the Floquet topological insulators (FTIs). By controlling the strength of the off-resonant light field we manipulate the interplay between the hybridization energies of the top and bottom surface states (SSs), and the effective energies induced by the irradiated light field to open and close band gaps of the SSs Dirac electrons. This gives rise to topologically nontrivial and trivial phases. We calculate the longitudinal and transverse conductivities of the FTI thin film and show that these strongly depend on the strength of the irradiated light field. The behavior of conductivities signatures TQPTs between distinct topological insulating phases.

Realization of unpinned two-dimensional dirac states in antimony atomic layers

Two-dimensional (2D) Dirac states with linear dispersion have been observed in graphene and on the surface of topological insulators. 2D Dirac states discovered so far are exclusively pinned at high-symmetry points of the Brillouin zone, for example, surface Dirac states at overline{{{Gamma }}} in topological insulators Bi2Se(Te)3 and Dirac cones at K and K^{prime} points in graphene. The low-energy dispersion of those Dirac states are isotropic due to the constraints of crystal symmetries. In this work, we report the observation of novel 2D Dirac states in antimony atomic layers with phosphorene structure. The Dirac states in the antimony films are located at generic momentum points. This unpinned nature enables versatile ways such as lattice strains to control the locations of the Dirac points in momentum space. In addition, dispersions around the unpinned Dirac points are highly anisotropic due to the reduced symmetry of generic momentum points. The exotic properties of unpinned Dirac states make antimony atomic layers a new type of 2D Dirac semimetals that are distinct from graphene.

Planar magnetic texture on the surface of a topological insulator

We study the planar magnetic textures coupled to a two-dimensional Dirac surface state, where both the magnetic texture and surface state form in the magnetic topological insulator surface layer. It is shown that the radial vortex with winding number $w=\ifmmode\pm\else\textpm\fi{}1$ leads to the confinement of Dirac states, where a mapping to the Schr\"odinger equation of a two-dimensional hydrogen atom is found. The fully spin-polarized zero-energy bound state forms a flat band that resembles the zeroth Landau level of Dirac electrons in a uniform out-of-plane magnetic field. Remarkably, the number of the zero-energy state is topologically robust. Interestingly, when such a system is proximity coupled to an $s$-wave superconductor, the existence of Majorana zero modes at the Abrikosov vortex depends only on the relative value of the magnetic exchange coupling and the pairing strength. We conclude with a brief discussion on the physical realization with such magnetic textures.

Electronic Structure of Pb Adsorbed Surfaces of Intrinsic Magnetic Topological Insulators.

Recently discovered intrinsic magnetic topological insulators (IMTIs) constitute a unique class of quantum materials that combine magnetism and nontrivial topology. One of the most promising applications of these materials is Majorana fermion creation; Majorana fermions are expected to arise when a superconductor is in contact with the surface of an IMTI. Here we study the adsorption of Pb ultrathin films on top of IMTIs of various stoichiometries. By means of XPS we figure out the formation of the Pb wetting layer coupled to the surface atoms for low coverages and overlayer growth on top upon further deposition. Investigation of the adsorbed surfaces by means of ARPES shows the Dirac cone survival, its shift in a binding energy, and the Pb electronic states appearance. The obtained results allow the Pb/IMTI interfaces to be constructed for the understanding of the proximity effect and provide an important step toward quantum device engineering based on IMTIs.

Spin-Sensitive Epitaxial In2Se3 Tunnel Barrier in In2Se3/Bi2Se3 Topological van der Waals Heterostructure.

Current-generated spin arising from spin-momentum locking in topological insulator (TI) surface states has been shown to switch the magnetization of an adjacent ferromagnet (FM) via spin-orbit torque (SOT) with a much higher efficiency than heavy metals. However, in such FM/TI heterostructures, most of the current is shunted through the FM metal due to its lower resistance, and recent calculations have also shown that topological surface states can be significantly impacted when interfaced with an FM metal such as Ni and Co. Hence, placing an insulating layer between the TI and FM will not only prevent current shunting, therefore minimizing overall power consumption, but may also help preserve the topological surface states at the interface. Here, we report the van der Waals epitaxial growth of β-phase In2Se3 on Bi2Se3 by molecular beam epitaxy and demonstrate its spin sensitivity by the electrical detection of current-generated spin in Bi2Se3 surface states using a Fe/In2Se3 detector contact. Our density functional calculations further confirm that the linear dispersion and spin texture of the Bi2Se3 surface states are indeed preserved at the In2Se3/Bi2Se3 interface. This demonstration of an epitaxial crystalline spin-sensitive barrier that can be grown directly on Bi2Se3, and verification that it preserves the topological surface state, is electrically insulating and spin-sensitive, is an important step toward minimizing overall power consumption in SOT switching in TI/FM heterostructures in fully epitaxial topological spintronic devices.

Ultrafast carrier and phonon dynamics in thin films of bismuth telluride on a flexible substrate

Thin films of topological insulators (TIs) possess exotic nonlinear optical properties such as strong light-matter interaction, broadband spectral sensitivity, thickness-dependent tunable bandgap, higher harmonic generation, etc. Due to the presence of metallic surface states with Dirac fermions and an insulating bulk band in TI, they are projected to be a viable material for studying novel physics, resulting in exciting new properties and technologies. The peculiar electron-phonon interactions at the surface have been linked to various unexpected physical features of topological insulators. Although electron behaviour in topological insulators has been extensively investigated on non-flexible substrates, electron-phonon interactions at TI bulk and surfaces states are less well known on a flexible substrate. Because of its potential uses in wearable devices, communications, sensors, and other fields, there is a significant need for the manufacture of high performance flexible optoelectronic responses employing novel exotic materials. In this paper, we preformed ultrafast pump-probe method to explore TI (Bi2Te3) thin films on a flexible PET (polyethylene terephthalate) substrate. We studied the dynamics of Bi2Te3 thin films' hot carrier relaxation progression and coherent phonon behaviour using transient absorbance measurements. Thickness-dependent low-frequency coherent acoustical phonon oscillations are observed in 10 nm thick films, and the changes vanish for 25 nm thick films, and high-frequency optical phonon oscillations are absent in our work. Subpicosecond range of time constant for the photon excitation, diffusion, carrier thermalization, and relaxation are reported. Longer characteristics time was observed for 25 nm film as compared to 10 nm film, and its variation has been discussed here. The thickness-dependent coherent acoustic phonon oscillating in the terahertz frequency range has been experimentally calculated. The film's terahertz frequency response varies with its thickness, allowing it to be employed in future terahertz applications based on flexible topological insulator thin films.

Kohn anomalies in topological insulator thin films: first-principles study

Kohn anomaly is a non-smooth phonon softening induced by electron–phonon coupling in low-dimensional metals. Some measurements claimed that Kohn anomalies are present in topological materials due to the Dirac fermions in the bulk or in the surface. However, first-principles calculations have not reproduced the Kohn anomalies, especially, on the surface of topological insulators. It is still unclear about the origin of the controversy for the existence of the Kohn anomaly whether it is a numerical shortcoming or misinterpretation in measurement. In this study, we investigate the surface Kohn anomaly in two topological insulators Bi2Se3 and SnSe using the state-of-the-art Wannier interpolation schemes. We find that Bi2Se3 exhibits the Kohn anomaly but only in the bulk-like phonon modes by structural confinement along the c-axis. Interestingly, SnSe exhibits the surface Kohn anomaly in support of the experimental report on Pb0.7Sn0.3Se. We show that double Dirac cones in SnSe surface states are responsible for the Kohn anomaly, which is even enhanced if the subsurface states are partially occupied.

Magneto-optical spin Hall effect of light in topological insulators

We examine a tunable spin Hall effect of light (SHEL) on the surface of topological insulators (TIs) under the influence of an external magnetic field, to the best of our knowledge, which can be regarded as the magneto-optical SHEL. It is revealed that the position of the Brewster angle and the value of the SHEL shifts are decided by the dissipative and reactive components of TIs optical conductivity, respectively. Specifically, the SHEL shifts are insensitive to the external magnetic field and the Fermi energy in the case of high frequency while it is sensitive to them in the case of low frequency. The potential applications of determination the external magnetic field and the Fermi energy of TIs by probing the SHEL shifts is proposed. Moreover, we can select high frequencies so that the measured SHEL shifts are not affected by the external magnetic field. These results can be extensively extended to other TIs. By incorporating the weak measurement techniques, the magneto-optical SHEL may provide application references in the fabrications of TIs parameter sensors or other topological photoelectric devices.