Solution-processed Sb2S3 thin films and solar cell devices have recently gained popularity due to their easy procedure and outstanding final device performance. Nevertheless, although the substrate has a significant influence on thefollowing functional films, the effect of the substrate in the Sb-based solar cells appears to have not been adequately examined. In this study, we performed an interesting thioacetamide (TA)-assisted surface treatment strategy on the electron transport layer (ETL) to achieve high-quality development of Sb2S3 thin films and based solar devices. The surface treatment of ETLs resulted in a uniform surface, Zn(OH)2 impurity reduction, and excellent wettability. The above enhanced the growth of Sb2S3 thin films with features like extremely large crystal sizes (∼8 um), more homogeneous and dense film morphology, preferred crystal orientation, reduced oxygen content, and fewer defects, which benefits carrier transport. Finally, a device structure constructed of FTO/TiO2/Zn(O,S)/Sb2S3/Spiro/Au was created, resulting in an almost 30 % increase in efficiency, from 4.05 % to 5.21 %. The proposed approach not only gives new insights into generating higher-quality Sb2S3 thin films and devices, but it also presents new concepts and methods for future high-quality sulfide thin film preparation.
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