Wide band gap (WBG) semiconductors have become of great interest to extend Moore’s Law beyond the limitations of current Si IC technology. More specifically, WBG materials (i.e., Silicon Carbide and Gallium Nitride) have been shown to increase performance due to their intrinsic properties (i.e., high capacitance, thermal stability, and wear resistance) associated with these materials. Current CMP processing of these WBG materials utilizes aggressive chemical conditions (i.e., abrasive nanoparticles and harsh oxidizers) and increasing shear forces to obtain the desired material removal rates (MRR) and surface planarity. Unfortunately, these processing conditions can cause defectivity (i.e., organic residue, pad debris, scratches, etc.) during the polishing process, leading to increasingly complex post-CMP cleaning steps. This work focuses on the strategic design of chemically activated, peroxide-based CMP slurries for emergent materials that target redox activation at the slurry-substrate surface interface to achieve improved CMP performance (i.e., enhanced material removal rates, superior surface quality, and low defects). More specifically, the catalytic generation of reactive oxygen species (ROS) (i.e., hydroxyl radical (*OH) and singlet oxygen (1O2)) at the substrate interface via surface complexation during the polishing process is exploited. The generated ROS can weaken the Si-C bonds within the surface of the substrate, allowing the particles to remove the surface more readily. This work explored organometallic complexes and non-metal catalysts, such as boron-based additives, as surface-active redox modulators. Initial results show that lower-stability complexes result in equally low MRR ranges below 400 nm/hr, while highly stable complexes increase the MRR as high as 1600 nm/hr. This complex stability/MRR trend has been further correlated to changes in the electron-poor areas of the complexes and ROS generation via radical trapping. The surface roughness analysis has shown improved surface quality between 0.8-1.0 nm across the substrate; however, organic residues from the complexes remain. Transitioning to non-metal boron electrophiles has shown similar MRR results (1000-1400 nm/hr) but can alleviate surface contamination. This implementation of Araca. Inc.’s patent-pending Flucto-CMP® technology employs megasonic energy to promote enhanced ROS generation, thus accelerating removal and significantly improving surface defectivity.