Surface Of Topological Insulator Research Articles

Magnetochiral anisotropy induced nonlinear planar Hall effect in topological insulator surface states

Magnetochiral anisotropy induced nonlinear planar Hall effect in topological insulator surface states

Spin-orbit torques due to topological insulator surface states: an in-plane magnetization as a probe of extrinsic spin-orbit scattering.

Topological insulator (TI) surface states exert strong spin-orbit torques. When the magnetization is in the plane its interaction with the TI conduction electrons is non-trivial, and is influenced by extrinsic spin-orbit scattering. This is expected to be strong in TIs but is difficult to calculate and to measure unambiguously. Here we show that extrinsic spin-orbit scattering sizably renormalizes the surface state spin-orbit torque resulting in a strong density dependence. The magnitude of the renormalization of the spin torque and the effect of spin-orbit scattering on the relative sizes of the in-plane and out-of-plane field-like torques have strong implications for experiment: We propose two separate experimental signatures for the measurement of its presence.

Spin-splitting and spin Hall effect of reflected Airy beams on the surface of topological insulator

We present an analysis of the enhanced spin Hall effect of light (SHEL) resulting from a reflected Airy beam off the interface of an air-topological insulator (TI). Our study suggests that the surface conductivity of TI film and the decay factors of Airy beams are crucial in increasing the spin-splitting distance and the spatial shifts of the left-handed circularly polarized (LCP) and right-handed circularly polarized (RCP) components. An apparent spatial shift asymmetry depending on the decay factors can be observed between the LCP and RCP components, where the coupling of intrinsic and extrinsic angular momentum will play a significant impact. The connection among the thickness of TI film, chemical potential and the incident frequency at the fixed decay factors is thoroughly examined to achieve the maximum of spatial shifts. We find that the coupling between the upper and lower surfaces’ conductivity could be responsible for the pronounced SHEL. These conclusions can be extended to other interfaces of comparable structures, such as insulators coated with a layer of two-dimensional Dirac material. Our work provides novel insights into the use of innovative beams incident on the surface of TI film and their potential applications in optical detection.

Spectral Asymmetry Induces a Re-Entrant Quantum Hall Effect in a Topological Insulator.

The band inversion of topological materials in three spatial dimensions is intimately connected to the parity anomaly of 2D massless Dirac fermions, known from quantum field theory. At finite magnetic fields, the parity anomaly reveals itself as a non-zero spectral asymmetry, i.e., an imbalance between the number of conduction and valence band Landau levels, due to the unpaired zero Landau level. This work reports the realization of this 2D Dirac physics at a single surface of the 3D topological insulator (Hg,Mn)Te. An unconventional re-entrant sequence of quantized Hall plateaus in the measured Hall resistance can be directly related to the occurrence of spectral asymmetry in a single topological surface state. The effect should be observable in any topological insulator where the transport is dominated by a single Dirac surfacestate.

Magnetization-induced phase transitions on the surface of three-dimensional topological insulators

Magnetization-induced phase transitions on the surface of three-dimensional topological insulators

Are topological insulators promising thermoelectrics?

Some of the best thermoelectric (TE) materials to date are also topological insulators (TIs). While many studies have investigated the effects of topologically-protected TI surface states on TE properties, the conditions needed to realize such effects are quite different from typical operating conditions of TE devices for, e.g., power generation and room-temperature Peltier cooling. As a result, it is still unclear what properties of TIs, especially those related to the bulk band structure, are beneficial for TE performance, if any. Here, we perform high-throughput transport calculations using density functional theory to reveal that, within the same structure type, TIs tend to outperform normal insulators as TEs when properly optimized. The calculations also indicate that the TE performance is higher for TIs with strongly inverted bands. To explain these observations, we develop models based on Boltzmann transport theory which show that warping driven by band inversion, a key characteristic of TIs, is responsible for the high TE performance of TIs. We find that warping benefits the TE performance because of reduced transport mass and effectively higher valley degeneracy. Our results show that the band inversion strength is a critical property of a TI dictating the TE performance, and we suggest potential strategies to tune the inversion strength and enhance the TE performance in TIs, such as alloying and strain engineering. The study marks TIs as serious candidates for TE applications owing to band inversion-driven warping.

Highly Efficient Spin-Orbit Torque Switching in Bi2Se3/Fe3GeTe2 van der Waals Heterostructures.

Topological insulators (TIs) have shown promise as a spin-generating layer to switch the magnetization state of ferromagnets via spin-orbit torque (SOT) due to charge-to-spin conversion efficiency of the TI surface states that arises from spin-momentum locking. However, when TIs are interfaced with conventional bulk ferromagnetic metals, the combination of charge transfer and hybridization can potentially destroy the spin texture and hamper the possibility of accessing the TI surface states. Here, we fabricate an all van der Waals (vdW) heterostructure consisting of molecular beam epitaxy grown bulk-insulating Bi2Se3 and exfoliated 2D metallic ferromagnet Fe3GeTe2 (FGT) with perpendicular anisotropy. By detecting the magnetization state of the FGT via anomalous Hall effect and magneto-optical Kerr effect measurements, we determine the critical switching current density for magnetization switching to be Jc ≈ 1.2 × 106 A/cm2, the lowest reported for the switching of a perpendicular anisotropy ferromagnet using Bi2Se3. From second harmonic Hall measurements, we further determine the SOT efficiency (ξDL) to be in the range of 1.8 ± 0.3 and 1.4 ± 0.08 between 5 and 150 K, comparable to the highest values reported for Bi2Se3. Our density functional theory calculations find that the weak interlayer interactions at the Bi2Se3/FGT interface lead to a weakened dipole at the interface and suppress the proximity induced magnetic moment on Bi2Se3. This enables direct access to the TI surface states contributed by the first quintuple layer, where the spins are singly degenerate with significant net in-plane spin polarization. Our results highlight the clear advantage of all-vdW heterostructures with weak interlayer interactions that can enhance SOT efficiency and minimize critical current density, an important step toward realizing next generation low-power nonvolatile memory and spintronic devices.

Formation of well-ordered surfaces of Bi2-xSbxTe3-ySey topological insulators using wet chemical treatment

The surface preparation of topological insulators (TIs) is a critical task in order to realize their efficient applications. A chemical treatment in an anhydrous solution of hydrogen chloride in isopropanol (HCl-iPA) and a subsequent annealing at relatively low temperature in ultrahigh vacuum (UHV) was successfully used for the surface preparation of bulk 3D (0001) TIs Bi2Te3, Sb2Te3, Bi2Se3 and an MBE - grown Bi2-xSbxTe3-ySey (BSTS) thin films. The surface treatment showed a significant modification of the initial TI surfaces, which was free from the structural disorder, oxidation and chemical impurities determined by X-ray photoelectron spectroscopy and low-energy electron diffraction. The insulating nontrivial bulk gap and well resolved gapless surface states with a linear dispersion of a massless Dirac cone were observed by angle-resolved photoelectron spectroscopy (ARPES). In the BSTS film, the Fermi level is located within the bulk band gap. The negative magnetoconductance corresponding to weak antilocalization demonstrated the contribution of the surface states of BSTS, that promise to be protected from backscattering. The surface treatment method proposed in this work is highly efficient for both bulk and thin TI films that can be useful for the deposition of an insulators/metals to fabricate transistor and spin valve systems.

Bound States of a Short-Range Defect on the Surface of an Intrinsic Antiferromagnetic Topological Insulator in a Noncollinear Phase

The features of electronic states on the surface of an intrinsic antiferromagnetic topological insulator (AFM TI) containing defects are theoretically investigated. Our approach takes into account the role of the electrostatic potential and the variation in the orientation of magnetic moments in the near-surface layers. A change in the spectral characteristics of the surface states under the transformation of magnetization from an equilibrium AFM phase of A-type to a ferromagnetic phase through a noncollinear texture is described. It is shown that in AFM TI with uniaxial anisotropy, an external magnetic field applied along the easy axis can cause a significant modulation of the exchange gap size in the spectrum of surface states and even invert the gap sign. Modeling the single defect effect as a surface potential perturbation over a finite scale, we analytically investigate the formation of a bound state and its behavior depending on the strength of potential and exchange scattering by the defect and the exchange gap size. The energy level of the bound state is demonstrated to experience a sharp shift in the vicinity of the spin-flop transition. The theoretical results obtained allow us to provide a consistent explanation of recent experimental data on scanning tunneling spectroscopy of antisite defects on the surface of the prototype AFM TI MnBi2Te4 in an external magnetic field.

Experimental investigation of the effect of topological insulator on the magnetization dynamics of ferromagnetic metal: and heterostructure

We have studied the spin-pumping phenomenon in ferromagnetic metal (FM) ()/topological insulator (TI) () bilayer system to understand magnetization dynamics of FM in contact with a TI. TIs embody a spin–momentum-locked surface state that spans the bulk band gap. Due to this special spin texture of the topological surface state, the spin-charge interconversion efficiency of TI is even higher than that of heavy metals. We evaluated the parameters like effective damping coefficient (), spin-mixing conductance () and spin current density () to demonstrate an efficient spin transfer in heterostructure. To probe the effect of the topological surface state, a systematic low-temperature study is crucial as the surface state of TI dominates at lower temperatures. The exponential increase of for all different thickness combinations of FM/TI bilayers and the enhancement of effective damping coefficient () with lowering temperature confirms that the spin chemical potential bias generated from spin-pumping induces spin current into the TI surface state. Furthermore, low-temperature measurements of effective magnetization () and magnetic anisotropy field (Hk ) showed anomaly around the same temperature region where the resistivity of TI starts showing metallic behavior due to the dominance of conducting TI surface state. The anomaly in Hk can result from the emerging exchange coupling between the TI surface state and the local moments of the FM layer at the interface without any long-range ferromagnetic order in TI at the interface.

Quantum fractality on the surface of topological insulators

Quantum fractality on the surface of topological insulators

Tunable Josephson Diode Effect on the Surface of Topological Insulators.

The Josephson rectification effect, where the resistance is finite in one direction while zero in the other, has been recently realized experimentally. The resulting Josephson diode has many potential applications on superconducting devices, including quantum computers. Here, we theoretically show that a superconductor-normal metal-superconductor Josephson junction diode on the two-dimensional surface of a topological insulator has large tunability. The magnitude and sign of the diode quality factor strongly depend on the external magnetic field, gate voltage, and the length of the junction. Such rich properties stem from the interplay between different current-phase relations for the multiple transverse transport channels, and can be used for designing realistic superconducting diode devices.

Tuning the spin of Dirac fermions on the surface of topological insulators in proximity to a helical spin density wave

We investigate the spin tunability of Dirac fermions on the surface of a 3D topological insulator in proximity to a helical spin density wave, acting as an applied one-dimensional periodic potential for spins produced by spiral multiferroic oxide. It is observed that the spin mean values of Dirac fermion undergo oscillations under the influence of such a periodic potential created by the exchange field of magnetization. The tunability of spin is strongly affected by the strength, orientation and period of the exchange field. In particular, the mean values of spin are anisotropic around the Dirac point, depending strongly on the amplitude and spatial period of the periodic potential. We also find that the spin expectation values change significantly by changing the plane of magnetization. Interestingly, the in-plane components of spin mean values perform pronounced oscillations, whereas the out of plane component does not oscillate at all. The oscillations of planar components of spin are originated from the spin-momentum locking on the surface of topological insulator.

Room Temperature Spin-to-Charge Conversion in Amorphous Topological Insulating Gd-Alloyed BixSe1-x/CoFeB Bilayers.

Disordered topological insulator (TI) films have gained intense interest by benefiting from both the TI's exotic transport properties and the advantage of mass production by sputtering. Here, we report on the clear evidence of spin-charge conversion (SCC) in amorphous Gd-alloyed BixSe1-x (BSG)/CoFeB bilayers fabricated by sputtering, which could be related to the amorphous TI surface states. Two methods have been employed to study SCC in BSG (tBSG = 6-16 nm)/CoFeB(5 nm) bilayers with different BSG thicknesses. First, spin pumping is used to generate a spin current in CoFeB and detect SCC by the inverse Edelstein effect (IEE). The maximum SCC efficiency (SCE) is measured to be as large as 0.035 nm (IEE length λIEE) in a 6 nm thick BSG sample, which shows a strong decay when tBSG increases due to the increase of BSG surface roughness. The second method is THz time-domain spectroscopy, which reveals a small tBSG dependence of SCE, validating the occurrence of a pure interface state-related SCC. Furthermore, our angle-resolved photoemission spectroscopy data show dispersive two-dimensional surface states that cross the bulk gap until the Fermi level, strengthening the possibility of SCC due to the amorphous TI states. Our studies provide a new experimental direction toward the search for topological systems in amorphous solids.

Hall effect of ferro/antiferromagnetic wallpaper fermions

Nonsymmorphic crystals can host characteristic double surface Dirac cones with fourfold degeneracy on the Dirac points, called wallpaper fermion, protected by wallpaper group symmetry. We clarify the charge and spin Hall effect of wallpaper fermions in the presence of the (anti)ferromagnetism. Based on a four-sublattice model, we construct the effective Hamiltonian of wallpaper fermions coupled with the ferromagnetic or antiferromagnetic moment. Both ferromagnetic and antiferromagnetic moments induce an energy gap for the wallpaper fermions, leading to quantized (spin) Hall conductivity. The ferromagnetic wallpaper fermion induces the Hall conductivity quantized into ${e}^{2}/h$, which is twice that for a single Dirac fermion on the surface of topological insulators. On the other hand, the spin Hall conductivity decays and reaches to be a finite value as the antiferromagnetic coupling increases. We also show that the results above are valid for a general model of wallpaper fermions from symmetry consideration.

Twist-angle dependent proximity induced spin-orbit coupling in graphene/topological insulator heterostructures

The proximity-induced spin-orbit coupling (SOC) in heterostructures of twisted graphene and topological insulators (TIs) Bi$_2$Se$_3$ and Bi$_2$Te$_3$ is investigated from first principles. To build commensurate supercells, we strain graphene and correct thus resulting band offsets by applying a transverse electric field. We then fit the low-energy electronic spectrum to an effective Hamiltonian that comprises orbital and spin-orbit terms. For twist angles 0$^\circ\leq\Theta \lessapprox 20^\circ$, we find the dominant spin-orbit couplings to be of the valley-Zeeman and Rashba types, both a few meV strong. We also observe a sign change in the induced valley-Zeeman SOC at $\Theta\approx 10^\circ$. Additionally, the in-plane spin structure resulting from the Rashba SOC acquires a non-zero radial component, except at $0^\circ$ or $30^\circ$. At $30^\circ$ the graphene Dirac cone interacts directly with the TI surface state. We therefore explore this twist angle in more detail, studying the effects of gating, TI thicknesses, and lateral shifts on the SOC parameters. We find, in agreement with previous results, the emergence of the proximitized Kane-Mele SOC, with a change in sign possible by electrically tuning the Dirac cone within the TI bulk band gap.

Charged magnons on the surface of a topological insulator

We study a system of two-dimensional Dirac electrons (as is realized on the surface of a 3D topological insulator) coupled to an array of localized spins. The spins are coupled ferromagnetically to each other, forming an ordered ground state with low-energy spin-wave excitations (magnons). The Dirac electrons couple to the spins through a spin-dependent effective Zeeman field. The out-of-plane effective Zeeman field therefore serves as a Dirac mass that gaps the electronic spectrum. Once a spin is flipped, it creates a surrounding domain in which the sign of the Dirac mass is opposite to that of the rest of the sample. Therefore, an electronic bound state appears on the domain wall, as predicted by Jackiw and Rebbi. However, in a quantum magnet, a localized spin flip does not produce an eigenstate. Instead, the eigenstates correspond to delocalized spin waves (magnons). As in the case of the single flipped spin, the delocalized magnon also binds an in-gap electronic state. We name this excitation a `Jackiw-Rebbi-Magnon' (JRM) and study its signature in the dynamic spin susceptibility. When the sample is tunnel-coupled to an electronic reservoir, a magnon produced in a system without any electrons hybridizes with a JRM (which binds a single electron), producing magnon-JRM polaritons. For such a system, we identify a quantum phase transition when the magnon-JRM polariton energy falls below that of the fully polarized ferromagnetic ground state.

Bound states and controllable currents on topological insulator surfaces with extended magnetic defects

We show that a magnetic line defect on the surface of a topological insulator generically supports two distinct branches of spin-polarized and current-carrying one-dimensional bound states. We identify the components of magnetic scattering that lead to the bound states. The velocity, and hence spin texture, of each of those branches can be independently tuned by a magnetic field rotated in the plane of the surface. We compute the local net and spin-resolved density of states as well as spin accumulation and charge currents. The net spin polarization and current due to both bound and scattering states vary stepwise as a function of the electrostatic and magnetic components of the scattering potential, and can be tuned by an applied field. We discuss stability of the bound states with respect to impurity scattering.

Spin-Momentum Locking and Ultrafast Spin-Charge Conversion in Ultrathin Epitaxial Bi1 - x Sbx Topological Insulator.

The helicity of three-dimensional (3D) topological insulator surface states has drawn significant attention in spintronics owing to spin-momentum locking where the carriers' spin is oriented perpendicular to their momentum. This property can provide an efficient method to convert charge currents into spin currents, and vice-versa, through the Rashba-Edelstein effect. However, experimental signatures of these surface states to the spin-charge conversion are extremely difficult to disentangle from bulk state contributions. Here, spin- and angle-resolved photo-emission spectroscopy, and time-resolved THz emission spectroscopy are combined to categorically demonstrate that spin-charge conversion arises mainly from the surface state in Bi1 - x Sbx ultrathin films, down to few nanometers where confinement effects emerge. This large conversion efficiency is correlated, typically at the level of the bulk spin Hall effect from heavy metals, to the complex Fermi surface obtained from theoretical calculations of the inverse Rashba-Edelstein response. Both surface state robustness and sizeable conversion efficiency in epitaxial Bi1 - x Sbx thin films bring new perspectives for ultra-low power magnetic random-access memories and broadband THzgeneration.

Symmetries as the Guiding Principle for Flattening Bands of Dirac Fermions

Since the discovery of magic-angle twisted bilayer graphene, flat bands in Dirac materials have become a prominent platform for realizing strong correlation effects in electronic systems. Here we show that the symmetry group protecting the Dirac cone in such materials determines whether a Dirac band may be flattened by the tuning of a small number of parameters. We devise a criterion that, given a symmetry group, allows for the calculation of the number of parameters required to make the Dirac velocity vanish. This criterion is employed to study band flattening in twisted bilayer graphene and in surface states of 3D topological insulators. Following this discussion, we identify the symmetries under which the vanishing of the Dirac velocity implies the emergence of perfectly flat bands. Our analysis allows us to construct additional model Hamiltonians that display perfectly flat bands at certain points in the space of parameters: the first is a toy model of two coupled 3D topological insulator surfaces, and the second is a quasicrystalline generalization of the chiral model of twisted bilayer graphene.6 MoreReceived 11 June 2022Revised 6 March 2023Accepted 27 March 2023DOI:https://doi.org/10.1103/PhysRevX.13.021012Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI.Published by the American Physical SocietyPhysics Subject Headings (PhySH)Research AreasElectronic structurePhysical SystemsStrongly correlated systemsTopological insulatorsTopological materialsTwisted bilayer grapheneCondensed Matter, Materials & Applied Physics