Analysis of near-surface helium and hydrogen isotope depth profiles by a specialized proton backscattering technique has been demonstrated as a means to characterize the concentration, initial position, and subsequent migration behavior of all Z atom species (except 1H) in metals. The projected range (R p ) of helium implanted at 50 keV in Nb, V Ti and Cu has been measured and, for the latter two metals, has been found to agree with theoretical calculations within 100 Å (3%). Deuterium has also been detected and profiled (in Ti) using this technique. Detection sensitivity has been demonstrated at the 7 at % level for D in Ti and at the 0.5 at % level for 4He in Cu. In addition, surface and bulk distributions of carbon, oxygen and 3He have been profiled and, in principle, the depth distributions of tritium, 6Li, 7Li, Be, B, N, and F are also simultaneously resolvable if contained within the foil samples. The technique has been used to investigate the effect of radiation damage and in situ annealing on implanted helium profiles in copper. From these observations the mechanism for helium release from the end-of-range location has been delineated.