Surface Morphology Of Layers Research Articles

Copper slag based catalytic material was prepared using a one-pot method to efficiently activate of peroxymonosulfate for degradation of carbamazepine

Smelt slag-based environmental catalytic materials offer a sustainable and valuable approach to solid waste management. In this study, a novel peroxymonosulfate (PMS) catalyst (MCT-2) was prepared from copper slag (MCT-1) by a non-calcined method. Subsequently, the MCT/PMS-AOP catalytic system was established. The copper slag, mainly composed of Si, Ca, Mg, Fe and O, was converted into MCT-2 by hydrothermal treatment, NaOH etching and edta-2na-induced crystallization, and finally, the molecular self-loading of MCT was achieved by the "one-pot method" under hydrothermal conditions. MCT-2 exhibits a layered surface morphology and CaFeO3 phase. In the MCT-2/PMS system, the dominant reactive oxygen species (ROSs) generated were SO4•− and HO•. The performance of the system was evaluated using CBZ as a simulated pollutant and actual river water as a carrier, and it was found that MCT-2/PMS degraded CBZ, BPA, DCF and ATZ up to 99%. Further mechanistic studies showed that MCT-2 has relatively high catalytic activity and the lowest reaction energy barrier compared with similar materials. The easy availability of raw materials, environmentally friendly preparation method, and high degradation efficiency make MCT/PMS-AOP have a broad application prospect.

High-quality InAs homoepitaxial layers grown by molecular beam epitaxy

The growth conditions for InAs homoepitaxy by molecular beam epitaxy were comprehensively studied across a broad spectrum of substrate temperatures, As2/In flux ratios, and growth rates. It was found that the surface morphology and overall quality of the InAs layers were significantly influenced by these parameters. Optimal conditions, including a lower growth temperature, reduced As2 flux, and slower growth rate, were pivotal in achieving high-quality InAs layers. Two primary characterization techniques, differential interference contrast microscopy and atomic force microscopy, were employed to evaluate the material quality. High-quality InAs homoepitaxial layers were successfully grown at a substrate temperature of 455 °C and a growth rate of 0.33 monolayers per second (ML/s). These layers exhibited a remarkably low defect density of approximately 300 defects per square centimeter, which is over an order of magnitude lower than previously reported, and a notably low root-mean-square roughness of 0.116 nm. At a growth rate of 0.33 ML/s, the growth temperature range for InAs homoepitaxial layers was found to be quite broad, whereas the As2/In flux ratio remained within a narrow range. This study underscores the critical role of precise control over growth parameters in the molecular beam epitaxy process for producing high-quality InAs homoepitaxial layers.

Fabrication of high-performance gas diffusion electrode via microporous layer surface morphology control

Enhancing the performance of membrane electrode assemblies (MEAs) that utilize gas diffusion electrodes (GDEs) to match those based on catalyst coated membranes (CCMs) is critical for the widespread application of GDE-based technologies in proton exchange membrane fuel cells (PEMFCs). The inferior interfaces between the catalyst layers and the proton exchange membranes (PEMs) within GDE-based MEAs result in lower performance. In this study, the microporous layer (MPL) surface morphology control was achieved through hot pressing possessing the advantages of convenient implementation and avoiding excessive ionomer introduction. This approach produces smoother surfaces and higher peeling strengths between GDEs and PEMs, indicating enhanced interfacial contact. The ohmic resistance decreased from 0.056 to 0.033 Ω cm2, while the cathode catalyst layer proton resistance decreased from 0.124 to 0.059 Ω cm2, suggesting that the proton conductivity across the layers and within the catalyst layers were both increased. Moreover, the catalytic activity and gas transport capability within the catalyst layers are marginally improved. Following the MPL surface morphology control, the peak power density of GDE-based MEA was improved by 23 %, comparable to that of the CCM-based MEA. Nevertheless, excessive hot-pressing pressure might block the water transport path, resulting in poor performance at high current density.

Photodetector Devices: Investigation of ZnO Thin Films Fabricated via SILAR Technique on Various Substrates:

The synthesis of photodetectors for ZnO nanostructure films on various substrates, including p-type (100) silicon (Si), and porous silicon (pSi), has been achieved through the utilization of a straightforward technique known as the successive ionic layer adsorption and reaction (SILAR) method. To analyze the optical properties, surface morphology, and crystal structure of the ZnO layers, UV-Vis spectrometers, field emission scanning electron microscopes (FESEM), and X-ray diffraction (XRD) were employed. The characterization of the ZnO samples revealed that the number of SILAR cycles has a significant impact on the morphology and optical band gap of the synthesized layer. The Fourier-transform infrared (FTIR) spectrum successfully detected the distinctive extended vibration mode of ZnO. By conducting 20 cycles, high-quality hexagonal ZnO was obtained. The responsivity of the planar ZnO on silicon (ZnO/Si) and ZnO on the porous silicon (ZnO/pSi) surface exhibited variations depending on the substrate surface and bias voltage. The results indicated that the (ZnO/pSi) heterojunction demonstrated a high response in the visible range (350–850 nm) at a low bias voltage. On the other hand, the (ZnO/Si) photodetector displayed a high sensitivity of 666.66% at a low voltage of 1V in comparison to the (ZnO/pSi) photodetector, which exhibited a sensitivity of 483%.

Investigating the effect of path planning strategies on 3D metallic structure deposited using robotic WAAM

Wire Arc Additive Manufacturing (WAAM) is an advanced technique for producing medium-to-large-sized components, offering high deposition rates and low equipment costs. Path planning strategies are critical in determining grain growth direction and achieving isotropic properties in the components. This study introduces a novel path planning strategy, the switchback mode, to mitigate unidirectional grain growth and enhance the mechanical properties of WAAM-deposited components. ER-4043 aluminium alloy walls were deposited using the switchback mode and compared with the conventional bi-directional path planning strategy. The findings reveal that different path planning strategies result in variations in layer size, surface morphology, microstructure, residual stress, microhardness, wear resistance, and tensile properties. Notably, the switchback mode demonstrated superior mechanical strength compared to the bi-directional mode, with yield strength (YS) increasing from 90.2 MPa to 113.9 MPa, ultimate tensile strength (UTS) from 148.8 MPa to 178.7 MPa, and elongation percentages from 18.4 % to 21.3 %. Furthermore, the residual stress changed from tensile to compressive when switching from bi-directional to switchback mode.

The impact of series ([formula omitted]) and shunt resistances ([formula omitted]) on solar cell parameters to enhance the photovoltaic performance of f-PSCs

Flexible Perovskite Solar Cells (f-PSCs) are made on an ITO-coated PET substrate. SnO2 has been used as a transparent inorganic electron transporting layer (ETL), PEDOT: PSS as an organic hole transporting layer (HTL), and C H3 N H3 Pb I3 as a perovskite absorbing layer. Two configurations of the device structure have been formed, one is normal structure ITO/PET/ SnO2/C H3 N H3 Pb I3/PEDOT: PSS/Ag (n-i-p) and the other is inverted structure ITO/PET/PEDOT: PSS/C H3 N H3 Pb I3/ SnO2/Ag (p-i-n). An antisolvent (i.e. ethyl acetate) has been used to control the surface morphology of the perovskite layers during fabrication of f-PSCs. Applying antisolvent in perovskite improves carrier mobility, transport properties, and higher power conversion efficiency (PCE) achieved. This study focuses on the effects of series (Rs) and shunt resistance (Rsh) of f-PSCs on photovoltaic parameters while controlling the surface morphology of perovskite films applied on both structures. The study examines the behaviour of f-PSCs with and without the use of an antisolvent. For normal structure, PCE is found at 11.34 % for f-PSCs with antisolvent and 7.96 % for f-PSCs without antisolvent. On the other hand, inverted structures show PCE 10.36 % and 7.46 % for f-PSCs with and without antisolvent, respectively. PCE has been calculated for the f-PSCs by bending the samples about 3 0o angle and about 20 % decrease in PCE has been found. The oddity of this work is to estimate the series and shunt resistant for f-PSCs and find the cost-effective control of these parameters by controlling interfacial defects.

On Morphology of Aluminum-Gallium Nitride Layers Grown by Halide Vapor Phase Epitaxy: The Role of Total Reactants' Pressure and Ammonia Flow Rate.

The focus of this study was the investigation of how the total pressure of reactants and ammonia flow rate influence the growth morphology of aluminum-gallium nitride layers crystallized by Halide Vapor Phase Epitaxy. It was established how these two critical parameters change the supersaturation levels of gallium and aluminum in the growth zone, and subsequently the morphology of the produced layers. A halide vapor phase epitaxy reactor built in-house was used, allowing for precise control over the growth conditions. Results demonstrate that both total pressure and ammonia flow rate significantly affect the nucleation and crystal growth processes which have an impact on the alloy composition, surface morphology and structural quality of aluminum-gallium nitride layers. Reducing the total pressure and adjusting the ammonia flow rate led to a notable enhancement in the homogeneity and crystallographic quality of the grown layers, along with increased aluminum incorporation. This research contributes to a deeper understanding of the growth mechanisms involved in the halide vapor phase epitaxy of aluminum-gallium nitride, and furthermore it suggests a trajectory for the optimization of growth parameters so as to obtain high-quality materials for advanced optoelectronic and electronic applications.

Layer‐Controllable “2.5D” DNA Origami Crystals Synthesized by a Hierarchical Assembly Strategy

AbstractThe finite periodic arrangement of functional nanomaterials on the two‐dimensional scale enables the integration and enhancement of individual properties, making them an important research topic in the field of tuneable nanodevices. Although layer‐controllable lattices such as graphene have been successfully synthesized, achieving similar control over colloidal nanoparticles remains a challenge. DNA origami technology has achieved remarkable breakthroughs in programmed nanoparticle assembly. Based on this technology, we proposed a hierarchical assembly strategy to construct a universal DNA origami platform with customized layer properties, which we called 2.5‐dimensional (2.5D) DNA origami crystals. Methodologically, this strategy divides the assembly procedure into two steps: 1) array synthesis, and 2) lattice synthesis, which means that the layer properties, including layer number, interlayer distance, and surface morphology, can be flexibly customized based on the independent designs in each step. In practice, these synthesized 2.5D crystals not only pioneer the expansion of the DNA origami crystal library to a wider range of dimensions, but also highlight the technological potential for templating 2.5D colloidal nanomaterial lattices.

High-temperature growth of ZnSnN2 layer via radiofrequency magnetron sputter epitaxy

ZnSnN2 layers were grown directly on Al2O3 (0001) substrates via RF magnetron sputter epitaxy at various substrate temperatures using N2 gas and a ZnSn alloy target. The crystalline quality and surface morphology of the ZnSnN2 layers were examined. X-ray diffraction patterns indicated that ZnSnN2 layers grown at substrate temperatures of 600 °C and 700 °C had wurtzite-type structures. The gross full width at half maximum (FWHM) value of the X-ray rocking curve (XRC) for the (0002) plane of the ZnSnN2 layer grown at 700 °C was 324 arcsec. The XRC for the (0002) plane contained two components, and the FWHM values of these components were 206 and 1520 arcsec for the highly c-axis-oriented columnar domains and disordered structure inside the ZnSnN2 layer, respectively. Metallic Sn was detected in a ZnSnN2 layer grown at 800 °C.

Atomic vs. sub-atomic layer deposition: impact of growth rate on the optical and structural properties of MoS2 and WS2

MoS2 and WS2 mono- and multilayers were grown on SiO2/Si substrates. Growth by atomic layer deposition (ALD) at fast growth rates is compared to sub-ALD, which is a slow growth rate process with only partial precursor surface coverage per cycle. A Raman spectroscopic analysis of the intensity and frequency difference of the modes reveals different stages of growth from partial to full surface layer coverage followed by layer-by-layer formation. The initial layer thickness and structural quality strongly depend on the growth rate and monolayers only form using sub-ALD. Optical activity is demonstrated by photoluminescence (PL) characterization which shows typical excitonic emission from MoS2 and WS2 monolayers. A chemical analysis confirming the stoichiometry of MoS2 is performed by x-ray photoelectron spectroscopy. The surface morphology of layers grown with different growth rates is studied by atomic force microscopy. Plan-view transmission electron microscopy analysis of MoS2 directly grown on freestanding graphene reveals the local crystalline quality of the layers, in agreement with Raman and PL results.

Observation of tantalum deposition and growth on TiB2 and ZrB2 from PISCES-RF deuterium and helium plasma exposures

Deuterium and helium plasma exposures on bulk TiB2 and ZrB2 samples were performed using the PISCES-RF linear plasma device. 40 and 90 eV deuterium ion plasma exposures were performed at 240 and 800 °C sample temperatures, and 80 eV helium ion plasma exposures were performed at 800 °C sample temperatures. Following plasma exposures, it was discovered that two plasma conditions (90 eV deuterium and 80 eV helium at 800 °C) resulted in thick (>200 nm) tantalum-rich (>10 at%) surface features on the targets, presumably from tantalum sourced from a tantalum adapter mask or cap used as part of the target holder. This work aims to characterize these tantalum-rich features and examine the mechanisms of impurity deposition.Plasma-induced surface morphology of the tantalum-rich surface layers depends on plasma properties and target temperature and chemistry. Greater titanium sputtering compared to zirconium resulted in more distinct surface features in the TiB2 samples compared to the ZrB2 samples via increased, prompt deposition onto tantalum surface impurities. There is still uncertainty as to why thick tantalum deposition only occurred under some plasma exposure conditions but not others; it is likely due to tantalum sputtering by a combination of boron molecules from the targets and carbon-impurities in the tantalum mask or targets. Impurity driven surface features are a well-documented phenomena in samples exposed to plasma from linear plasma device facilities—this work confirms the occurrence of this and emphasizes the need for chemistry characterization of isolated post-mortem surface features in plasma-exposed samples.

Oxidation of Fe35Mn21Ni20Cr12Al12 High Entropy Alloy in Dry Air

The isothermal oxidation of a Fe35Mn21Ni20Cr12Al12 high entropy alloy (HEA) was investigated in dry air for 50 h at 500, 600, and 700 °C after 90% cold rolling. The Fe35Mn21Ni20Cr12Al12 HEA behaves according to the linear oxidation rate with rate constants of 1 × 10−6, 3 × 10−6, and 7 × 10−6 g/(cm2·s) for oxidation at 500 °C, 600 °C, and 700 °C, respectively. The activation energy for oxidation of the HEA was calculated to be 60.866 KJ/mole in the 500–700 °C temperature range. The surface morphology and phase identification of the oxide layers were characterized. The formation of MnO2, Mn2O3, Mn3O4, Cr2O3, and Al2O3 in the oxide layers along with Fe2O3 is the key to the oxidation mechanism. The elemental mapping and line EDX scans were performed to identify the oxidation mechanisms.

Fabrication and characterization of Ni-TiO2 and Ni-V2O5 single-layer and double-layer coatings with the approach of improving the wear and corrosion properties

The main purpose of this study is to investigate the metallurgical behavior of Ni-TiO2 and Ni-V2O5 single-layer coatings and compare them with Ni-TiO2/Ni-V2O5 and Ni-V2O5/Ni-TiO2 double-layer coatings. The general attitude is the optimal choice of coatings in terms of wear and corrosion properties. The dimensions of TiO2 and V2O5 ceramic powders were 20 nm and 500 nm, respectively, and their morphology was also different. The presence of the submicron V2O5 particles was more than the TiO2 nanoparticles in the nickel matrix deposit. Also, with double layering the coatings (Ni-TiO2/Ni-V2O5 and Ni-V2O5/Ni-TiO2), the presence of ceramic particles in the upper layer had increased compared to the same single-layer coatings. Therefore, the increase in the hardness of the deposits was directly related to the percentage of ceramic powders in the coating. The surface morphology of the Ni-TiO2 layers was formed as a cauliflower shape while the Ni-V2O5 deposits had a smooth morphology. Increasing participation of TiO2 particles in the Ni-TiO2 layer had made the morphology rougher. Also, by applying the Ni-TiO2 layer under the Ni-V2O5 deposit, the surface morphology of the Ni-V2O5 layer became smooth, which can be due to the increase in the V2O5 content in this layer. The lowest amount of fluctuation appeared in the roughness profiles related to the Ni-V2O5 layers, and the large fluctuation range in the Ni-TiO2 layers was due to the smooth and cauliflower structure, respectively. The crystallite size in double-layer coatings was smaller than the single-layer coatings due to the higher nucleation and growth rate of nickel deposition in the nickel matrix upper layers. According to the presented results, the Ni-V2O5 and Ni-V2O5/Ni-TiO2 coatings were the most wear resistant coatings. Also, the Ni-V2O5/Ni-TiO2 and Ni-TiO2/Ni-V2O5 double-layer coatings were suitable candidates for corrosion resistance and to consider both properties, Ni-V2O5/Ni-TiO2 was very suitable. Hardness, surface morphology, roughness, preferred planar texture, and ceramics powder participation were important parameters in determining the wear and corrosion properties of coatings. Also, it seems that the effect of the double layering of nickel matrix deposits on the metallurgical properties was greater than the dimensions of the ceramic particles participating in the coating.

Influence of Different Hydrocarbons on Chemical Vapor Deposition Growth and Surface Morphological Defects in 4H‐SiC Epitaxial Layers

Controlled epitaxial growth of 4H‐SiC is essential for advancing both power electronics and quantum technologies. This study explores how different carbon sources—methane and propane—affect the surface morphology of these epitaxial layers. By varying C/Si ratios and using the two mentioned hydrocarbons as the carbon source in chloride‐based epitaxial growth of 4H‐SiC layers, it is unveiled that methane results in an exceptionally smooth surface. However, it pronounces surface irregularities such as short step bunching and dislocation‐related etch pits. Moreover, methane amplifies the overgrowth of triangular defects with the 4H polytype. In contrast, the introduction of propane causes a step‐bunched surface together with inclined line‐like surface morphological defects. Notably, a majority of the triangular defects exhibit a pure 3C character without an overgrown 4H polytype. It is shown that these outcomes could be attributed to different sticking coefficients and diffusivity of the molecular species resulting from different carbon sources on the 4H‐SiC surface during the epitaxial growth. This research also uncovers the underlying origins and mechanisms responsible for various surface morphological defects.

3% absolute efficiency gain on multicrystalline silicon solar cells by TiO2 antireflection coatings derived by APCVD process

This paper reports about the adaptation of the CVD thin films technology to the fabrication process of multicrystalline silicon (mc-Si) solar cells which is the key issue of modern method of photovoltaic power generation. In this contribution, the higher reflection of a mc-Si solar cell surface is strongly reduced by the deposition of TiO2 antireflection coating (ARC) on the front using CVD method at atmospheric pressure (APCVD). The surface morphology and elemental composition of the TiO2 antireflective layers were revealed using Scanning Electron Microscopy (SEM) in conjunction with Energy Dispersive X-ray Spectroscopy (EDS). The reflectivity was then reduced from 35% to 8.6% leading to the increase of the short circuit current Jsc which was about 33.86 mA/cm² with a benefit of 5.23 mA/cm² (surface area = 25 cm²) compared to reference cell (without ARC). This simple and low cost technology induces a 14.26% conversion efficiency which is a gain of + 3% absolute in comparison to reference cell. These results are encouraging and prove the effectiveness of the APCVD method for efficiency enhancement in silicon solar cells.

MOCVD of ZrN: Tuning Thin Film Properties Towards Catalytic Applications

Transition metal nitrides (TMN) have gained increasing attention over recent years as active materials for energy related applications including catalysis and energy storage. They feature high electrical conductivities, wide optical band gaps and superior chemical stability.[1] In particular, ZrN has been recently identified as a promising material for a range of potential applications that include plasmonic devices,[2] as a catalyst for the oxygen reduction reaction (ORR),[3] and as a catalyst for the nitrogen reduction reaction (NRR),[4] due to its appealing electronic properties, while being cheap and abundant compared to commonly used noble metals.[1,5] The fabrication of ZrN on large scale under moderate process conditions, with the required properties for catalytic applications, motivates the use of chemical vapor deposition (CVD) as the method of choice. Moreover, with the variation of process parameters that includes precursor choice and growth temperature, it is possible to tune the surface features as well as composition of the layers that are suitable for catalytic applications.In this study, we have employed metal organic chemical vapor deposition (MOCVD) to synthesize ZrN layers on Si and glassy carbon (GC) substrates in the temperature range of 550 – 850 °C. The influence of the nature of the precursor and deposition temperature on the structure, composition and surface morphology of the ZrN layers was systematically studied. Oriented ZrN layers with facetted grain morphology were obtained. ZrN films of different thickness were analyzed by complementary methods including X-ray diffraction (XRD) (Figure 1 a)), Raman spectroscopy, Rutherford backscattering spectrometry (RBS) (Figure 1 b)), nuclear reaction analysis (NRA), scanning electron microscopy (SEM) (Figure 1 c)), and X-ray photoelectron spectroscopy (XPS). Based on the detailed film analysis, catalyst surfaces were modeled by DFT calculations. The NRR activity and selectivity towards the competing hydrogen evolution reaction (HER) were evaluated by first principles simulations and electrochemical experiments. This preliminary study on material fabrication and theoretical investigations lays a foundation for the investigation of ZrN for NRR applications for future studies.

Experiments on Oxidation and Combustion Behaviors of Cerium Metal Slice with Slow Heating under O2/Ar Atmospheric Conditions

Cerium (Ce) metal is commonly involved in fires due to its high activity in terms of chemical properties, posing a critical threat to equipment and human health. The oxidization, combustion and oxidization-to-combustion transition of cerium are complicated processes, and a full understanding of detailed evolution behaviors is lacking. A series of experiments are executed to study the oxidation-to-combustion process of cerium metal slices (CMSs) in an O2/Ar atmosphere of 0.3 mg/mL O2. Macroscopic features and micro-transformation behaviors of the physicochemical process are characterized using high-speed imaging, spectroscopy, XRD, AFM, SEM-EDX, and TGA. Results show that the evolution behaviors of CMS present three critical transitions, namely, the oxidation stage (OS), ignition and combustion stage (ICS) of heterogeneous reaction, and extinction stage (ES). The evolutions of CMS structure, oxide layer thickness, surface morphology and micro-zone composition at several key moments during the OS elucidate the transformation mechanism. The surface of CMS is firstly oxidized to Ce2O3 and then to CeO2, and these oxides experience their formation, grow, and gradually aggregate to form dense oxide layers. Fissures have been observed in the micro-morphology of the dense oxide layers at the initial ICS, implying that oxygen could diffuse through the fissures of the oxide layers and fiercely react with molten Ce inside during the ICS. The reactivities of Ce in OS and ICS are quantitatively evaluated with thermodynamic data. The qualitative and quantitative mechanism of the oxidization-to-combustion transition of Ce greatly contributes to the optimal design and safe operation of active metal equipment.

Study of the synergy effect of high-intensity aluminum ions implantation into titanium and energy impact on the surface

The work studies the synergy effect of high-intensity implantation of aluminum ions and thesubsequent impact of a powerful pulsed ion beam on the microstructure and properties of titanium.Specimens of titanium were implanted for one hour at a temperature of 1170 K with an ion fluenceof 1021 ions/cm2. Layers with a thickness of about 150 μm were obtained. The energy impact wascarried out by a powerful nanosecond pulsed ion beam with an ion current density on the targetof 100 A/cm2. The paper presents data on changes in the elemental composition, surface morphology,and microstructure of ion-doped and energy-modified layers. It has been established that the additionalenergy impact on the ion-doped layer of a powerful pulsed beam improves microstructure at depthsgreater than 3.4 μm. The synergistic of high-intensity ion implantation of aluminum and the energyimpact of a pulsed ion beam improves the wear resistance of titanium by eighteen folds.

Structural Features and Morphology of Surface Layers of AA2024 and AA5056 Aluminum Alloys During Plasma Cutting

Structural Features and Morphology of Surface Layers of AA2024 and AA5056 Aluminum Alloys During Plasma Cutting

MOCVD deposited double-sided CeO2 buffer layer for YBCO superconducting film grow on R-plane Al2O3 substrate

Double-sided CeO2/YBCO films were grown on the double-sided polishing R-plane Al2O3 substrate using MOCVD technology. The effects of deposition parameters of the MOCVD setup on the structural orientation and surface morphology of CeO2 buffer layers grown on sapphire substrates were investigated. A series of CeO2 buffer layers were prepared by varying the substrate temperature and oxygen flow rate. The results show that when the substrate temperature is lower than 750 °C and the oxygen flow rate is lower than 400 sccm, CeO2 films is grown in a mixed (00l) and (111) orientations, and when the substrate temperature is 750 °C-840 °C and the oxygen flow rate is higher than 400 sccm, the CeO2 films are grown with a single (001) orientation. When the deposition temperature was 800 °C and the oxygen flow rate was 800 sccm, the CeO2 buffer layer structure had the best orientation with double-sided ω-scan FWHM of 0.019° and 0.02°; the FWHM of double-sided Ф-scan were 1.8° and 1.7°; the RMS roughness on both sides measured by AFM were 1.28 nm. YBCO films grown on this buffer layer have good c-axis epitaxial orientation, and the test results of the pole figure show an in-plane rotation of 45° between YBCO and CeO2 lattices. Thus, the obtained YBCO film has a critical current density of 2 MA/cm2, indicating that the films can be prepared to meet the needs of microwave devices using R-plane Al2O3 substrates.