In the evolving landscape of energy harvesting, the refinement of friction properties in metal-semiconductor direct current triboelectric nanogenerators (MSDC TENGs) has garnered significant attention. While prior research predominantly concentrated on achieving superior performance in MSDC TENGs through material manipulation, structural adjustments, and friction mode optimization, there has been a noticeable dearth of investigations into surface engineering or modification of semiconductor materials. In this paper, the surface patterning of depletion mode GaN-based high electron mobility transistor (D-GaN HEMT) as friction materials is done by inductively coupled plasma etching method, involving both mechanism analysis and experimental exploration. Through modulation of etching depth and pattern density, a systematically arranged diamond pattern is created on the surface, augmenting surface roughness and charge density. Consequently, the surface-patterned D-GaN HEMT TENG achieves a maximum short-circuit current of 60 µA and a peak power density of 4.05 W/m², which is about 2.8 times greater than the pristine D-GaN HEMT TENG. Furthermore, the power supply capabilities of the surface-patterned D-GaN HEMT TENG are scrutinized, revealing its proficiency in capacitive charging and discharging. The successful activation of a deep ultraviolet LED underscores its potential applications in ultraviolet disinfection. This research holds substantial significance in optimizing the power generation efficiency and performance of MSDC TENGs employing D-GaN HEMT.
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