Surface Differential Reflectance Spectra Research Articles

Excitation spectra of Bi/Si(001) interfaces

Present article deals with the theoretical and experimental investigation of optical properties of Bi/Si(001) interfaces in a wide spectral range (1–4 eV). Theoretical excitation spectra of vicinal Si(001) surface, Bi/Si(001)–0.5 monolayer and Bi/Si(001)–1 monolayer interfaces are calculated by time‐dependent density functional theory with the hybrid Becke and Lee, Yang and Parr pseudopotential. Calculations and experimental studies of the absorption spectrum of the samples revealed the blue shift of the optical absorption edge with increasing of the bismuth covering degree. Features of the experimentally obtained reflectance anisotropy spectra (RAS) and surface differential reflectance spectra (SDRS) concerned with changing of the silicon surface reconstruction from 2 × 1 to 1 × 1 with the increasing of the bismuth covering degree from 0.5 to 1 monolayer. It is shown that the correlation between the theoretically calculated and experimental data makes it possible to identify the electronic transitions in the surface region.

Reflectance-anisotropy spectroscopy and surface differential reflectance spectra at the Si(100) surface: Combined experimental and theoretical study

We present reflectance-anisotropy spectroscopy (RAS) and surface differential reflectivity (SDR) experiments carried out on well-characterized single-domain nominal silicon (100) surface at room temperature. The results are compared with first-principles calculations which include many-body effects, namely, self-energy and excitonic effects. These strongly modify the line shape of the optical spectra. For a set of the five measurements, the RAS of clean, monohydride, and dyhidride surfaces, and the corresponding SDRs, good agreement between theory and experiment is obtained only when, in the calculation, the electron-hole interaction is accounted for.

Optical spectra and microscopic structure of the oxidized Si(100) surface: Combinedin situoptical experiments and first principles calculations

We have investigated the first stages of the room-temperature oxidation of the Si(100) surface combining experimental surface optical spectra with the results of ab initio calculations. High-resolution reflectance anisotropy spectra (RAS) and surface differential reflectance spectra (SDRS) have been measured for the clean surfaces and various exposures up to 183 L, which have been compared with calculated RAS and SDRS in the independent-particle approximation. Our results, yielding a consistent description of both RAS and SDRS, suggest the coexistence of different structural domains, whose weight changes smoothly with the oxygen exposure. The main oxidation mechanisms together with their occurrence versus coverage are discussed.

The temperature dependence of monolayer oxidation onSi(001)-(2 × 1) studied with surface differential reflectance spectroscopy

The initial process of dry oxidation on aSi(001)-(2 × 1) surface was investigated using surface differential reflectance (SDR) spectroscopy. Thephoton energy dependence of the difference spectra and their time courses during oxidationwere analysed. It is suggested that oxidation processes at different adsorption sites can beidentified from the SDR spectra. The temperature dependence of the time courses wasinvestigated in order to obtain the activation energies. Finite activation energies formonolayer oxidation were found in the temperature range of 623–823 K, corresponding toLangmuir-type adsorption. The photon energy dependence of the activation energiescould reflect the involvement of different reaction processes. Chemical reactionprocesses of both oxygen and silicon during oxidation in a monolayer regime arediscussed.

Ｓｉ（１１１）表面上のＢｒ吸着における多臭化物の形成過程

The halogen-adsorbed Si(111) surfaces were investigated at the very low coverage with scanning tunneling microscope (STM) and surface differential reflectance (SDR). From SDR spectra, we determined the densities of the reacted adatom dangling bonds and the broken adatom back bonds. At the initial stage, STM images showed that the bromine atoms tended to be adsorbed on the site adjacent to the bromine adsorbed ones, in contrast to the behavior of chlorine atoms. The poly-bromide formation was found with STM above 0.1 ML. This coverage is consistent with that shown by SDR spectra, which revealed bromine atoms begin to break adatom back bonds at lower coverage than chlorine does. In the case of chlorine atoms, the back bond breaking does not take place until 0.3 ML. The origin of the different behavior was discussed in terms of the local modification of electronic states and the reactivity between Si surface and each halogen atom.

Ｓｉ（００１）初期酸化過程における表面差分反射スペクトルの波長依存性

Ｓｉ（００１）初期酸化過程における表面差分反射スペクトルの波長依存性

Adsorption process of chlorine on Si(111)7×7 studied by surface differential reflectivity and second harmonic generation

The adsorption process of chlorine on Si(111)7×7 has been studied by means of real-time surface differential reflectance (SDR) spectroscopy and second harmonic generation. Time evolution of adsorption on adatom dangling bonds and breaking of adatom back bonds are obtained from SDR spectra and second harmonic intensity. The initial sticking probability on the dangling bonds and the initial breaking probability of the back bonds are determined by fitting the time evolution to the solutions of the rate equations for the adsorption of atoms without migration. Temperature dependence of these probabilities reveals that both the adsorption on adatom dangling bonds and breaking of adatom back bonds proceed without potential barriers, and that a metastable state exists in the breaking process of the back bonds.

Chlorine adsorption on Si(1 1 1) studied by optical methods

The adsorption process of chlorine on Si(1 1 1) has been studied by means of real time surface differential reflectance (SDR) spectroscopy and second harmonic generation (SHG). The structure observed at 3.6 eV in SDR spectra is attributed to transitions including Si–Cl antibonding states. However, the overall feature is due to the removal of the electronic states of the clean surface. Developments of adsorption on Si adatom dangling bonds and breaking of adatom back bonds are obtained from SDR spectra and second harmonic (SH) intensity. They are well fit by the solutions of the rate equations under the assumption of adsorption of atoms without migration, and the initial sticking probability on the dangling bonds and the initial breaking probability of the back bonds are determined. Dependence of the adsorption kinetics on the carrier concentration is briefly reported.

LINEAR OPTICAL SPECTROSCOPIES FOR SURFACE STUDIES

Surface Review and LettersVol. 07, No. 04, pp. 399-410 (2000) No AccessLINEAR OPTICAL SPECTROSCOPIES FOR SURFACE STUDIESYVES BORENSZTEINYVES BORENSZTEINLaboratoire d'Optique des Solides, UMR CNRS 7601, Universitée Pierre et Marie Curie, Case 80, 4 Place Jussieu, 75252 Paris Cedex 05, Francehttps://doi.org/10.1142/S0218625X00000403Cited by:22 PreviousNext AboutSectionsPDF/EPUB ToolsAdd to favoritesDownload CitationsTrack CitationsRecommend to Library ShareShare onFacebookTwitterLinked InRedditEmail FiguresReferencesRelatedDetailsCited By 22Noncontact AFM and differential reflectance spectroscopy joint analyses of bis-pyrenyl thin films on bulk insulators: Relationship between structural and optical propertiesFranck Bocquet, Laurent Nony, Franck Para, Philipda Luangprasert and Jean-Valère Naubron et al.22 June 2018 | Physical Review B, Vol. 97, No. 23Silicene multilayers on Ag(111) display a cubic diamondlike structure and a √3×√3 reconstruction induced by surfactant Ag atomsYves Borensztein, Alberto Curcella, Sébastien Royer and Geoffroy Prévot6 October 2015 | Physical Review B, Vol. 92, No. 15Optical referencing in differential reflectance spectroscopyH Zaglmayr, C G Hu, L D Sun and P Zeppenfeld22 September 2014 | Measurement Science and Technology, Vol. 25, No. 11Large differences in the optical properties of a single layer of Si on Ag(110) compared to siliceneYves Borensztein, Geoffroy Prévot and Laurence Masson9 June 2014 | Physical Review B, Vol. 89, No. 24Unusual Two-Stage Kinetics of Ethylene Adsorption on Si(100) Unraveled by Surface Optical Spectroscopy and Monte Carlo SimulationRomain Coustel, Yves Borensztein, Olivier Pluchery and Nadine Witkowski27 August 2013 | Physical Review Letters, Vol. 111, No. 9In-situ, Real-Time Investigation of Organic Thin Film Growth Using Reflectance Difference SpectroscopyLidong Sun and Peter Zeppenfeld1 Jan 2013Optical differential reflectance spectroscopy on thin molecular filmsRoman Forker, Marco Gruenewald and Torsten Fritz1 Jan 2012 | Annual Reports Section "C" (Physical Chemistry), Vol. 108Characterization of Chemical Bonding in Ion-Implanted Polymers by Means of Mid-Infrared ReflectivityVictor G. Ivanov, Georgi Hadjichristov and Eric Faulques1 September 2009 | Applied Spectroscopy, Vol. 63, No. 9Adhesion of growing nanoparticles at a glance: Surface differential reflectivity spectroscopy and grazing incidence small angle x-ray scatteringR. Lazzari, G. Renaud, C. Revenant, J. Jupille and Y. Borensztein24 March 2009 | Physical Review B, Vol. 79, No. 12Optical differential reflectance spectroscopy of ultrathin epitaxial organic filmsRoman Forker and Torsten Fritz1 Jan 2009 | Physical Chemistry Chemical Physics, Vol. 11, No. 13Reflectance-anisotropy spectroscopy and surface differential reflectance spectra at the Si(100) surface: Combined experimental and theoretical studyMaurizia Palummo, Nadine Witkowski, Olivier Pluchery, Rodolfo Del Sole and Yves Borensztein30 January 2009 | Physical Review B, Vol. 79, No. 3Adsorption of Phenylacetylene on Si(100)-2 × 1: Kinetics and Structure of the AdlayerOlivier Pluchery, Romain Coustel, Nadine Witkowski and Yves Borensztein26 October 2006 | The Journal of Physical Chemistry B, Vol. 110, No. 45Investigation of molecule chemisorption on Si(001)2 × 1 surfaces by surface reflectance spectroscopiesO. Pluchery, N. Witkowski and Y. Borensztein1 Nov 2005 | physica status solidi (b), Vol. 242, No. 13Probing the Si-Si Dimer Breaking of Si(100)2×1 Surfaces upon Molecule Adsorption by Optical SpectroscopyY. Borensztein, O. Pluchery and N. Witkowski7 September 2005 | Physical Review Letters, Vol. 95, No. 11In situ differential reflectance spectroscopy of thin crystalline films of PTCDA on different substratesHolger Proehl, Robert Nitsche, Thomas Dienel, Karl Leo and Torsten Fritz22 April 2005 | Physical Review B, Vol. 71, No. 16Optical response of clean and hydrogen-covered vicinal Si(001) 2 × 1 surfacesY Borensztein and N Witkowski21 September 2004 | Journal of Physics: Condensed Matter, Vol. 16, No. 39Apparatus for real time in situ quantitative studies of growing nanoparticles by grazing incidence small angle X-ray scattering and surface differential reflectance spectroscopyG Renaud, M Ducruet, O Ulrich and R Lazzari1 Aug 2004 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 222, No. 3-4Formation of Solid-State Excitons in Ultrathin Crystalline Films of PTCDA: From Single Molecules to Molecular StacksHolger Proehl, Thomas Dienel, Robert Nitsche and Torsten Fritz25 August 2004 | Physical Review Letters, Vol. 93, No. 9Isotropic and anisotropic optical reflectances of clean and hydrogen‐covered Si(001)2x1 surfacesY. Borensztein, N. Witkowski and S. Royer5 December 2003 | physica status solidi (c), No. 8Direct Kinetic Study of the Reaction of Cl 2•- Radical Anions with Ethanol at the Air−Water InterfaceR. S. Strekowski, R. Remorov and Ch. George20 March 2003 | The Journal of Physical Chemistry A, Vol. 107, No. 14GranFilm: a software for calculating thin-layer dielectric properties and Fresnel coefficientsRémi Lazzari and Ingve Simonsen1 Nov 2002 | Thin Solid Films, Vol. 419, No. 1-2NESSPIOM?Network for enhanced semiconductor surface processing throughin situ optical monitoringMartyn E. Pemble1 January 2001 | Surface and Interface Analysis, Vol. 31, No. 10 Recommended Vol. 07, No. 04 Metrics History Received 5 June 2000 PDF download

Linear Optical Spectroscopies for Surface Studies

Surface Review and LettersVol. 07, No. 04, pp. 399-410 (2000) No AccessLINEAR OPTICAL SPECTROSCOPIES FOR SURFACE STUDIESYVES BORENSZTEINYVES BORENSZTEINLaboratoire d'Optique des Solides, UMR CNRS 7601, Universitée Pierre et Marie Curie, Case 80, 4 Place Jussieu, 75252 Paris Cedex 05, Francehttps://doi.org/10.1142/S0218625X00000403Cited by:22 PreviousNext AboutSectionsPDF/EPUB ToolsAdd to favoritesDownload CitationsTrack CitationsRecommend to Library ShareShare onFacebookTwitterLinked InRedditEmail FiguresReferencesRelatedDetailsCited By 22Noncontact AFM and differential reflectance spectroscopy joint analyses of bis-pyrenyl thin films on bulk insulators: Relationship between structural and optical propertiesFranck Bocquet, Laurent Nony, Franck Para, Philipda Luangprasert and Jean-Valère Naubron et al.22 June 2018 | Physical Review B, Vol. 97, No. 23Silicene multilayers on Ag(111) display a cubic diamondlike structure and a √3×√3 reconstruction induced by surfactant Ag atomsYves Borensztein, Alberto Curcella, Sébastien Royer and Geoffroy Prévot6 October 2015 | Physical Review B, Vol. 92, No. 15Optical referencing in differential reflectance spectroscopyH Zaglmayr, C G Hu, L D Sun and P Zeppenfeld22 September 2014 | Measurement Science and Technology, Vol. 25, No. 11Large differences in the optical properties of a single layer of Si on Ag(110) compared to siliceneYves Borensztein, Geoffroy Prévot and Laurence Masson9 June 2014 | Physical Review B, Vol. 89, No. 24Unusual Two-Stage Kinetics of Ethylene Adsorption on Si(100) Unraveled by Surface Optical Spectroscopy and Monte Carlo SimulationRomain Coustel, Yves Borensztein, Olivier Pluchery and Nadine Witkowski27 August 2013 | Physical Review Letters, Vol. 111, No. 9In-situ, Real-Time Investigation of Organic Thin Film Growth Using Reflectance Difference SpectroscopyLidong Sun and Peter Zeppenfeld1 Jan 2013Optical differential reflectance spectroscopy on thin molecular filmsRoman Forker, Marco Gruenewald and Torsten Fritz1 Jan 2012 | Annual Reports Section "C" (Physical Chemistry), Vol. 108Characterization of Chemical Bonding in Ion-Implanted Polymers by Means of Mid-Infrared ReflectivityVictor G. Ivanov, Georgi Hadjichristov and Eric Faulques1 September 2009 | Applied Spectroscopy, Vol. 63, No. 9Adhesion of growing nanoparticles at a glance: Surface differential reflectivity spectroscopy and grazing incidence small angle x-ray scatteringR. Lazzari, G. Renaud, C. Revenant, J. Jupille and Y. Borensztein24 March 2009 | Physical Review B, Vol. 79, No. 12Optical differential reflectance spectroscopy of ultrathin epitaxial organic filmsRoman Forker and Torsten Fritz1 Jan 2009 | Physical Chemistry Chemical Physics, Vol. 11, No. 13Reflectance-anisotropy spectroscopy and surface differential reflectance spectra at the Si(100) surface: Combined experimental and theoretical studyMaurizia Palummo, Nadine Witkowski, Olivier Pluchery, Rodolfo Del Sole and Yves Borensztein30 January 2009 | Physical Review B, Vol. 79, No. 3Adsorption of Phenylacetylene on Si(100)-2 × 1: Kinetics and Structure of the AdlayerOlivier Pluchery, Romain Coustel, Nadine Witkowski and Yves Borensztein26 October 2006 | The Journal of Physical Chemistry B, Vol. 110, No. 45Investigation of molecule chemisorption on Si(001)2 × 1 surfaces by surface reflectance spectroscopiesO. Pluchery, N. Witkowski and Y. Borensztein1 Nov 2005 | physica status solidi (b), Vol. 242, No. 13Probing the Si-Si Dimer Breaking of Si(100)2×1 Surfaces upon Molecule Adsorption by Optical SpectroscopyY. Borensztein, O. Pluchery and N. Witkowski7 September 2005 | Physical Review Letters, Vol. 95, No. 11In situ differential reflectance spectroscopy of thin crystalline films of PTCDA on different substratesHolger Proehl, Robert Nitsche, Thomas Dienel, Karl Leo and Torsten Fritz22 April 2005 | Physical Review B, Vol. 71, No. 16Optical response of clean and hydrogen-covered vicinal Si(001) 2 × 1 surfacesY Borensztein and N Witkowski21 September 2004 | Journal of Physics: Condensed Matter, Vol. 16, No. 39Apparatus for real time in situ quantitative studies of growing nanoparticles by grazing incidence small angle X-ray scattering and surface differential reflectance spectroscopyG Renaud, M Ducruet, O Ulrich and R Lazzari1 Aug 2004 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 222, No. 3-4Formation of Solid-State Excitons in Ultrathin Crystalline Films of PTCDA: From Single Molecules to Molecular StacksHolger Proehl, Thomas Dienel, Robert Nitsche and Torsten Fritz25 August 2004 | Physical Review Letters, Vol. 93, No. 9Isotropic and anisotropic optical reflectances of clean and hydrogen‐covered Si(001)2x1 surfacesY. Borensztein, N. Witkowski and S. Royer5 December 2003 | physica status solidi (c), No. 8Direct Kinetic Study of the Reaction of Cl 2•- Radical Anions with Ethanol at the Air−Water InterfaceR. S. Strekowski, R. Remorov and Ch. George20 March 2003 | The Journal of Physical Chemistry A, Vol. 107, No. 14GranFilm: a software for calculating thin-layer dielectric properties and Fresnel coefficientsRémi Lazzari and Ingve Simonsen1 Nov 2002 | Thin Solid Films, Vol. 419, No. 1-2NESSPIOM?Network for enhanced semiconductor surface processing throughin situ optical monitoringMartyn E. Pemble1 January 2001 | Surface and Interface Analysis, Vol. 31, No. 10 Recommended Vol. 07, No. 04 Metrics History Received 5 June 2000 PDF download

Optical properties of bismuth-terminatedGaAs(110) surfaces

We have investigated the room temperature deposition of ultrathin bismuth layers on GaAs(110) surfaces by using Surface Differential Reflectance (SDR) spectroscopy. In SDR spectra measured at the “as grown” surfaces, optical transitions related to the new electronic structure of the overlayer appear at 0.8 eV and 1.35 eV, below the gap of bulk gallium arsenide. Because of their energy position and dependence upon deposited Bi thickness, we interpret them as related to Bi-overlayer and Bi-substrate bonds, respectively. Subsequent annealings of the overlayer at temperatures in the range 200–350 °C have not produced any improvement in the quality of the interface, but a new (weak) transition at about 1.1 eV possibly related to Bi crystallites present at the surface. Annealing atT > 350 °C produces desorption of the adsorbed bismuth.