Global kinetic mechanisms and models are developed to describe the growth of tin oxide films from monobutyltintrichloride (MBTC) by chemical vapor deposition. Several candidate mechanisms are examined. Deposition from mixtures is best described by a mechanism in which MBTC reacts with an oxygen-covered surface, while deposition from mixtures can be effectively predicted using a mechanism in which a gas-phase complex is formed, adsorbed by the surface, and reacts with gas-phase to form . Both models are based on new and previously reported growth-rate data obtained in a stagnation flow reactor (SFR) as a function of the inlet concentrations of MBTC, , and , substrate temperature, inlet gas velocity, and total pressure. Model rate constants were obtained by fitting to SFR growth rates obtained at and relatively low MBTC concentrations . The predictions are within a factor of 2 of SFR data obtained at higher pressures (up to ), as well as with results in the literature obtained at , suggesting that the deposition mechanisms used capture the essential chemistry over a broad range of chemical vapor deposition conditions.