Surface Acoustic Wave Duplexer Research Articles

A Phase Canceling Technique to Improve SAW Duplexer Isolation.

Spectrum resources are becoming increasingly crowded, and the isolation interval between different systems is getting smaller and smaller. This puts forward higher requirements for the duplexer. The duplexer is an important part of the radio frequency front end, and the isolation requirement is becoming higher. This paper presents a phase canceling circuit to improve the performance of the duplexer to meet the requirement of the communication system for isolation. A phase canceling circuit is an effective method to enhance the isolation through use of a surface acoustic wave (SAW) on-chip circuit. It contains a duplexer and a branch. The branch is designed for diminishing the leakage signal of the duplexer. Compared with the leakage signal, the branch consists of two attenuators and a phase shifter to generate a signal which has equal extent and reverse phase. As a result, this method is capable of increasing the isolation of band 5 by 12 dB in the downlink frequency. Meanwhile, it neither affects other factors, such as insertion loss or return loss, nor increases the size of the chip. The phase canceling circuit is expected to promote the quality of duplexer to satisfy the strict requirements in 4G and 5G systems.

CMOS Channel-Selection LNA With a Feedforward N-Path Filter and Calibrated Blocker Cancellation Path for FEM-Less Cellular Transceivers

In this article, a CMOS tunable channel-selection (CH-SEL) low-noise amplifier (LNA) with a feedforward (FF) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$N$ </tex-math></inline-formula> -path filter and a gain- and phase-calibrated interference- cancellation technique is proposed for advanced front-end module (FEM)-less cellular transceivers. The proposed LNA exhibits a high- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$Q$ </tex-math></inline-formula> RF bandpass/band-rejection filter characteristic based on a four-path filter, an active blocker cancellation with an FF translational loop, and an <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">LC</i> tank at the input, internal node, and output, respectively. The proposed gain- and phase-calibration block and tunable high-pass filter in the FF filtering path adjust the notch frequency corresponding to the transmitter leakage signal and help realize sharp notch filtering. The proposed CH-SEL LNA with CMOS duplexers compensates for the limited filtering performance of the CMOS duplexer and improves the blocker-tolerance and linearity of the receiver, and thus, can replace surface acoustic wave duplexers in the FEM. Fabricated in the 65-nm CMOS process, the CH-SEL LNA achieves a maximum voltage gain of 19.3 dB, minimum NF of 5.1 dB, and notch rejection ratio of more than 27.8 dB. It can also cover mid-band frequencies in the range of 1.35–2.7 GHz for 5G new radio cellular applications, exhibits an average current of 20 mA from a supply voltage of 1 V, and has an active die area of 1.16 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .

High-Isolation SAW Duplexer With On-Chip SAW Compensation Circuit Optimized for Isolated Multiple Frequency Bands.

This article describes the simulation analysis and experimental verification of a new type of high-isolation surface-acoustic wave (SAW) duplexer by using an SAW on-chip compensation circuit designed to cancel the leakage signal of the main SAW duplexer at multiple frequency bands. First, an analysis of amplitude and phase change of the SAW duplexer consists of a ladder-type transmitter (Tx) filter, and the double-mode SAW (DMS) receiver (Rx) filter is applied to clarify the cancellation conditions. Then, the feasibility of the SAW compensation circuit using a three-interdigital transducer (IDT) DMS resonator specially designed to satisfy the cancellation conditions is studied in circuit simulation based on the coupling-of-mode (COM) theory. Finally, we analyzed this concept in detail for a long-term-evolution (LTE) Band-I SAW duplexer for Tx and Rx band isolation in both a circuit simulation and experiment. Results showed that around 10-dB improvement of isolation in both the Tx and Rx bands was obtained without sacrificing other properties (e.g., insertion loss and attenuation) and that it agrees well with the result obtained by simulation analysis. These results are expected to be useful for now, considering that future mobile systems demand higher Rx sensitivity in multiple frequency bands.

Design Consideration on Converged Rx SAW Duplexer Module for Multiband RF Front End

This paper presents the design consideration on a converged Rx surface acoustic wave (SAW) duplexer module for integrated RF front end. Two different matching-circuit and notch-circuit configurations were examined with importance placed on electrical characteristics (insertion loss and isolation of duplexer) and simplification of module, respectively. From circuit simulations and examinations, we verified that a simplified design was best in terms of both characteristics and space in the case of a finite inductor’s Q. We also fabricate a quad-band converged Rx module (Band I + II, V + VIII) using an SAW duplexer and verified that its electrical characteristics agree well with our simulation results.

Zero Temperature Coefficient of Frequency Surface Acoustic Wave Resonator for Narrow-Duplex-Gap Application on SiO2/Al/LiNbO3 Structure

In this paper, we describe a zero temperature coefficient of frequency (TCF) surface acoustic wave (SAW) resonator on a SiO2/Al/LiNbO3 structure. We studied the dependence of TCF and electromechanical coupling factor (K2) of shear-horizontal (SH) SAW on SiO2 thickness, where the SiO2 shape control technique is applied to suppress spurious responses caused by the Rayleigh mode. As a result, we could realize a high performance SAW resonator having moderate K2 (8%) and zero TCF with complete suppression of the Rayleigh-mode spurious response. We demonstrated that the SiO2 shape control technique is effective for suppression of the Rayleigh-mode spurious response in the SAW resonator using the SiO2/Al/LiNbO3 structure for a wide range of SiO2 thicknesses. We also revealed the applicability of the SiO2/Al/LiNbO3 structure to SAW duplexers with a narrow duplex gap.

Analysis of Rayleigh-Mode Spurious Response Using Finite Element Method/Spectrum Domain Analysis for Surface Acoustic Wave Resonator on Nonflat SiO2/Al/LiNbO3 Structure

Because of their low insertion loss, high out-of-band rejection, and high power durability, miniature surface acoustic wave (SAW) duplexers are widely used in mobile phones. Substrate materials substantially limit and determine the performance of SAW duplexers; for their applications to Band I and Band IV systems with large pass-band widths and wide frequency separations between the transmitting and receiving frequency bands, a larger coupling coefficient (K2) is of primary importance. We have developed a shape-controlled SiO2 film/Al electrode/LiNbO3 substrate structure for their applications. It could lead to a large K2 and suppression of Rayleigh-mode spurious response. In this paper, we report the analysis using finite element method/spectrum domain analysis (FEM/SDA) for the SAW resonator on a nonflat SiO2 film/Al electrode/LiNbO3 structure. It was clarified that the shape-controlled SiO2 was effective in terms of achieving a large K2 for the SAW resonator with suppressed Rayleigh-mode spurious responses and bulk wave radiation. Furthermore, the experiment results showed a good agreement with the analysis results.

Miniature Surface Acoustic Wave Duplexer with Wide Duplex Gap on SiO2/Al/LiNbO3 Structure

In this paper, we describe the development of a miniature surface acoustic wave (SAW) duplexer for a Band IV system in the universal mobile telecommunication system (UMTS). We employed the SiO2/Al electrode/5° YX-LiNbO3 structure, which has a high electromechanical coupling coefficient (K2) and a small temperature coefficient of frequency (TCF). It is necessary to suppress the Rayleigh mode spurious response to apply this structure to the duplexer. We clarified experimentally the relationship between the SiO2 shape and the thickness of the Al electrode in the SiO2/Al/LiNbO3 structure to suppress the spurious response. Furthermore, we determined the condition to reduce the bulk radiation for the transmitting band of the Band IV duplexer. The developed SAW duplexer has the optimum structure for the Band IV system. The SAW duplexer exhibits excellent performance for practical use. In addition, the TCF is about -30 ppm/°C. The SAW duplexer is 2.5×2.0×0.5 mm3. Additionally, the SAW duplexer has sufficient power durability owing to the use of multilayer electrodes of AlMgCu/Ti.

Surface Acoustic Wave Duplexer Composed of SiO2/Cu Electrode/LiNbO3 Structure Having Convex and Concave Portions

The transition bandwidth of 20 MHz between the transmission (Tx: 1850–1910 MHz) and the receiving (Rx: 1930–1990 MHz) bands of personal communication service (PCS) handy phones in the United States (US) is very narrow compared with those of other systems. We have already realized surface acoustic wave (SAW) duplexers with sizes of 5.0×5.0×1.7 and 3.0×2.5×1.2 mm3 for PCS handy phones in the US with an excellent temperature coefficient of frequency (TCF) by using a shear horizontal (SH) wave on a flattened SiO2/Cu electrode/36–48° YX-LiTaO3 structure and a Rayleigh wave on a SiO2/Cu electrode/120–128° YX-LiNbO3 structure. Although the surface of the above-mentioned structures is flattened SiO2, we have also studied the shape of the SiO2 surface. As a result, in addition to increasing the stop-band width, which corresponds to the reflection coefficient, the TCF and power durability have been improved by forming convex portions on the surface of the SiO2 over the interdigital transducer (IDT) gaps.

Miniature Surface Acoustic Wave Duplexer Using SiO2/Al/LiNbO3 Structure for Wide-Band Code-Division Multiple-Access System

In this paper, we describe the development of a miniature surface acoustic wave (SAW) duplexer for Band I in the standard of the Third-Generation Partnership Project (3GPP) at a 2 GHz band. We employed a shear-horizontal SAW on a SiO2 overlay/thick Al electrode/5°YX-LiNbO3 structure, which offers a high electromechanical coupling coefficient (K2) as well as a small temperature coefficient of frequency (TCF). This feature is crucial for the realization of a wide duplex gap between the transmitting and receiving bands in the Band I specification. We investigated experimentally that the spurious response caused by the Rayleigh-mode could effectively be suppressed by controlling the cross-sectional shape of a SiO2 overlay on interdigital transducer (IDT) electrodes. In addition, the result also showed how this spurious response depends on IDT design parameters, i.e., electrode pitch and metallization ratio. The developed SAW duplexer was installed in a 2.5×2.0 mm2 package, and exhibited a low insertion loss, a high out-of-band rejection and a small TCF.

1J5-1 Surface Acoustic Wave Duplexer Composed of SiO_2/Cu-electrode/LiNbO_3 Structure having convex and concave portions(Bulk wave devices/Surface wave devices)

1J5-1 Surface Acoustic Wave Duplexer Composed of SiO_2/Cu-electrode/LiNbO_3 Structure having convex and concave portions(Bulk wave devices/Surface wave devices)

Smaller Surface Acoustic Wave Duplexer for US Personal Communication Service Having Good Temperature Characteristics

Using a flattened SiO2/Cu electrode/36–48° LiTaO3 structure, a small (5×5 mm2) surface acoustic wave (SAW) duplexer with a good temperature coefficient of frequency (TCF) for US personal communication services (PCS) was realized by the authors. However, a smaller duplexer is strongly required. Using the flip-chip bonding process of SAW chips and a Rayleigh SAW propagating on a flattened SiO2/Cu electrode/126–128° YX-LiNbO3 structure, which has a larger coupling factor than the above-mentioned substrate, a smaller (3×2.5 mm2) SAW duplexer with a good TCF was realized.

Surface acoustic wave element, surface acoustic wave device, surface acoustic wave duplexer, and method of manufacturing surface acoustic wave element

A surface acoustic wave element includes a thin film electrode composed of monocrystal aluminum disposed on a piezoelectric substrate. At least one metal of Cu, Ta, W, and Ti is segregated in the thin film electrode composed of monocrystal aluminum. In this surface acoustic wave element, segregation of Cu or the like occurs in the thin film electrode. Such segregation is effective to reduce the occurrence of cracks on the piezoelectric substrate during ultrasonic wave connection for flip chip mounting. That is, because the occurrence of cracks on the piezoelectric substrate is reduced, tolerance against the ultrasonic vibration is advantageously improved in the surface acoustic wave element.

Surface Acoustic Wave Duplexer for US Personal Communication Services with Good Temperature Characteristics

The transmission (Tx) and receiving (Rx) passbands of the Personal Communication Services (PCS) mobile phone system in the US are 1850–1910 MHz and 1930–1990 MHz, respectively. The transition bandwidth between Tx and Rx is very narrow, 20 MHz. A duplexer for the US-PCS employing surface acoustic waves (SAWs) requires a substrate which has good temperature stability, an optimum electromechanical coupling factor, a large reflection coefficient, and a good resonant mechanical Q value. Previously, there did not exist any substrate suitable for the US-PCS SAW duplexer. In this paper, we describe a new substrate that is suitable for the US-PCS SAW duplexer and a US-PCS SAW duplexer constructed with this new substrate.

Adaptive duplexer implemented using single-path and multipath feedforward techniques with BST phase shifters

As the complexity of modern modulation schemes increases, the noise levels inserted in the receive band by the transmitter are also increased. A technique to enhance the isolation of a surface acoustic wave duplexer is introduced, which reduces the noise levels in the receive band of the system. Feedforward techniques are used to create an adaptive null in the receive band, which can be targeted at any channel across the band. This null has been shown to give an improved isolation of 20 dB for the duplexer over a 2-MHz bandwidth. This feedforward system is implemented using a barium strontium titanate phase shifter to enable tunability of the enhancement null. Multipath feedforward techniques are also used to create extra nulls in the receive band and, hence, further improve isolation.

Analysis of Micro-Strip Line Lumped Elements for Surface Acoustic Wave Duplexers

Micro-strip line inductors and capacitors for surface acoustic wave (SAW) duplexers are analyzed and experimented in this study. For SAW duplexers, micro-strip line lumped elements must have small impedance values, below several tens of nH and pF, in small area. Flat line, meander line and spiral line inductors and interdigital capacitors on a LiTaO3 piezo-crystal are theoretically analyzed. In order to accurately evaluate small values of the lumped elements, a measurement method with a network analyzer is proposed. Through the experiment, the validity of the theoretical analysis method is confirmed. The analysis method in this paper can be applied to SAW duplexers as well as other microwave devices.