Suppress Charge Injection Research Articles

Influence mechanisms of electron beam irradiation on surface flashover in vacuum: Electron modification, deposition, and migration

In surface science, surface flashovers are discharge phenomena that occur at the gas/vacuum-solid interface. Spacecraft in the universe suffers from high-energy electron irradiation while it works under a high DC operating voltage, and thus, surface flashover threatens the safe operation of spacecraft and limits human’s deeper exploration of the universe. To unravel the influence mechanisms of electron beam irradiation (EBI), surface flashover voltages (Vf) of epoxy composites during EBI, short-term after EBI, and long-term after EBI are investigated, and the behaviors of molecular structure, deposited electrons near chains, and radiation electrons under EBI and their effects on Vf are separately clarified. For long-term after EBI, EBI induces crosslinking of molecular chains and introduces deep traps to the solid surface, which impedes electron emission and surface charging, and thus Vf increases. For short-term after EBI, the deposited electrons suppress charge injection to the solid, and Vf further increases. During EBI, the high-energy radiation electrons stimulate gas desorption and directly participate in plasma propagation, leading to a sharp decrease in Vf. This work comprehensively explains the influence mechanisms of EBI electron modification, deposition, and migration on the Vf, which offers a theory to guide the prevention of flashover for spacecraft.

Definition of a Localized Conducting Path via Suppressed Charge Injection in Oxide Memristors for Stable Practical Hardware Neural Networks.

Oxide-based memristors have been demonstrated as suitable options for memory components in neuromorphic systems. In such devices, the resistive switching characteristics are caused by the formation of conductive filaments (CFs) comprising oxygen vacancies. Thus, the electrical performance is primarily governed by the CF structure. Despite various approaches for regulating the oxygen vacancy distributions in oxide memristors, controlling the CF structure without modifying the device configuration related to material compatibility is still a challenge. This study demonstrates an effective strategy for localizing CF distributions in memristors by suppressing charge injection during the formation of conducting paths. As the injected charge quantity is reduced in the electroforming process of the oxide memristor, the CF distributions become narrower, leading to more reproducible and stable resistive switching characteristics in the device. Based on these findings, a reliable hardware neural network comprising oxide memristors is constructed to recognize complex images. The developed memristor has been employed as a synaptic memory component in systems without degradation for a long time. This promising concept of oxide memristors acting as stable synaptic components holds great potential for developing practical neuromorphic systems and their expansion into artificial intelligent systems.

Suppressing charge injection and preventing the extension of electrical trees of polymer-based composites through two-dimensional metal–organic frameworks nanosheets

Electrostatic capacitors have become an essential enabling technology in electronics and electrical power systems. The utilization of composite dielectric has significantly improved the discharged energy density (Ud). Nevertheless, optimizing the compatibility between fillers and polymers to further achieve miniaturization, lightweight, and integration remains a significant challenge. In this work, a novel composite film composed of two-dimensional (2D) metal–organic framework [Ni3(OH)2(1,4-benzenedicarboxylate)2-(H2O)4]⋅2H2O (2D Ni-MOF) nanosheets and poly(vinylidene fluoride-co-hexafluoropropylene) (P(VDF-HFP)) have been prepared. 2D Ni-MOF nanosheets possess superior interface area and dispersibility, which could interact well with the polymer matrix to form high-quality composite films. Meanwhile, Ni-MOF nanosheets act as ordered scattering centers to prevent the extension of electrical trees and introduce deep trap energy levels to trap the generated carriers. Remarkably, the ultralow content of 2D Ni-MOF nanosheets (∼0.25 wt%) synergistically improves dielectric constant and breakdown strength, thus achieving highly Ud of 21.16 J/cm3 at 600 MV/m. Such a simple, environmentally friendly, and mass-producible preparation process explores a promising new paradigm for high-performance electrostatic capacitors.

Novel Dark Current Reduction Strategy via Deep Bulk Traps for High-Performance Solution-Processed Organic Photodetectors.

The performance improvement of the organic photodetectors (OPDs) focuses on suppressing the dark current density (Jd) to improve the specific detectivity. In this work, a dark current reduction strategy relying on constructing limited deep traps in the active layer to suppress charge injection rate was newly proposed. And an optimization method has been successfully demonstrated on the solution-processed OPDs accordingly. Compared with the Jd expressed by the OPD with the shallow trap system, the device with deep bulk traps exhibits a dramatically reduced dark current while ensuring high responsivity. At a bias of -2 V, the optimized photodiode with a Jd down to 1.4 × 10-5 mA cm-2 and a maximum responsivity of 0.42 A W-1 @620 nm was realized, leading to a maximum detectivity calculated from shot noise of 6.23 × 1012 Jones. This value is 49-fold higher than that of the original OPD with the same structure. The effects of deep traps inside the semiconductor film on injected carriers and photogenerated carriers are well explained by the relative positions of the initial hopping levels. A better understanding of charge transport regimes in OPD helps to open new approaches for constructing high-performance OPD toward practical applications.

Investigation on effect of semiconducting screen on space charge behaviour of polypropylene‐based polymers for HVDC cables

High voltage direct current (HVDC) power transmission cable is critical for realising sustainability through renewable energy revolution. Eco-friendly thermoplastic polypropylene (PP)-based polymers/nanocomposites are regarded as promising candidates for replacing current thermoset crosslinked polyethylene (XLPE) cables. As an essential component of the extruded HVDC cable for improving conductor/insulation interface and suppressing charge injection to insulation at high DC electrical stresses, developing semiconducting (SC) screens that are compatible with PP-based insulation is of similar importance but has not been well studied yet. This work aims at designing PP-based semiconducting screens and investigating space charge behaviours of SC/PP/SC sandwich specimen to unfold the effect of semiconducting materials, bonding methods, applied DC electric field, and temperature on charge injection, accumulation, transportation, and dissipation in PP-based insulation. Although conventional thermal, mechanical, and low field electrical characterisations demonstrated that all of the developed semiconducting materials meet the performance criteria of commercial semiconducting materials, their space charge and local electric field distribution varied significantly at high DC fields. Compared with the traditional non-bonded configuration used at lab-scale, charge injection was enhanced in hot-pressed SC/PP/SC samples with tightly bonded interfaces, which better reflects the real situation in extruded cables. High temperature further intensified charge injections. Besides, our results also revealed that high temperature and electric field strongly influence charge mobilities and consequently their distribution and local electric field in PP-based insulations.

A high-precision interface for tunneling magnetoresistance sensors with 0.15 nT/√Hz resolution

The tunneling magnetoresistance (TMR) with high-resolution digital output is widely used in military and civil fields. In this work we proposed a low-noise read-out circuit and a four-order fully differential sigma-delta modulator for TMR sensors. In the read-out circuit, we used symmetrical cascade for good matching. We used correlated double sampling (CDS) technique to improve the conversion accuracy of the modulator. In switched capacitor circuits we used time-division multiplexing to suppress charge injection and clock feedthrough. The high-precision application specific integrated circuit (ASIC) chip was fabricated by a 0.35 [Formula: see text]m CMOS process from Shanghai Huahong foundry. The TMR sensor was placed in an environment of three-layer magnetic shielding for test. The active area of the ASIC is only about [Formula: see text]. At a sampling frequency of 20 kHz, the TMR magnetometer consumes 77 mW from a single 5 V supply; the sigma-delta modulator for TMR can achieve an average noise floor of −141 dBV. The magnetometer works at a full scale (FS) of [Formula: see text], it can achieve a nonlinearity of 0.2% FS and a resolution of 0.15 nT/Hz[Formula: see text] over a signal bandwidth.

MOS-based model of four-transistor CMOS image sensor pixels for photoelectric simulation

By using the MOS-based model established in this paper, the physical process of photoelectron generation, transfer, and storage in the four-transistor active pixel sensor (4T-APS) pixels can be simulated in SPICE environment. The variable capacitance characteristics of double junctions in pinned photodiodes (PPDs) and the threshold voltage difference formed by channel nonuniform doping in transfer gates (TGs) are considered with this model. The charge transfer process of photogenerated electrons from PPDs to the floating diffusion (FD) is analyzed, and the function of nonuniform doping of TGs in suppressing charge injection back to PPDs is represented with the model. The optical and electrical characteristics of all devices in the pixel are effectively combined with the model. Moreover, the charge transfer efficiency and the voltage variation in PPD can be described with the model. Compared with the hybrid simulation in TCAD and the Verilog-A simulation in SPICE, this model has higher simulation efficiency and accuracy, respectively. The effectiveness of the MOS-based model is experimentally verified in a 3 μm test pixel designed in 0.11 μm CIS process.

Polymer dielectrics sandwiched by medium-dielectric-constant nanoscale deposition layers for high-temperature capacitive energy storage

Polymer film capacitors are usually limited to relatively low working temperatures due to the large conduction loss of polymer dielectrics under high thermal stress. Here, a polymer dielectric sandwiched by medium-dielectric-constant nanoscale deposition layers is reported, which exhibits significantly suppressed conduction loss and outstanding capacitive performance at high temperatures. A series of deposition materials with distinct band structures and dielectric properties are investigated. It is found that well-balanced bandgap, dielectric constant and electrical conductivity of the nanoscale deposition layer is desirable for suppressing charge injection. The substantial performance improvements are demonstrated to result from the slow decay of barrier height with increasing electric field and the reduced electric field in the deposition layers. The optimized design using a polyetherimide film sandwiched by 150-nm-thick Al2O3 deposition layers gives rise to a concurrent high discharged energy density (2.8 J cm−3) and charge-discharge efficiency (90%) up to 200 °C, which are significantly higher than those of previously reported surface-coated polymer dielectrics, and are even comparable to the maximum values achieved with expensive, less productive solution-based composite approaches. Moreover, the nanoscale coating layer can be fabricated through evaporation deposition techniques, which is accessible with industrial equipment for fast surface deposition of capacitor films

Effect of La2Li0.5Co0.5O4 in semiconductive nanocomposites on suppression of space charge injection to the insulating medium for high-voltage direct current cables

Space charge accumulation in the insulating layers of high-voltage direct current cables is a key factor in the degradation of such cables and limits their operational safety. It is necessary to weaken charge injection to the insulation. The semiconductive shielding layer sandwiched between the conductive core and the insulating layer plays a vital role in preventing carrier injecting into the insulation. In this study, a new method is proposed to suppress charge injection. A certain amount of La2Li0.5Co0.5O4 nanopowder was doped in the semiconductive screen to enhance the internal conductive network and block charge injection in the insulation. The influence of La2Li0.5Co0.5O4 in the nanocomposite on the positive temperature coefficient effect and space charge injection process were explored. The results revealed that the peak resistivity of the specimen containing 5 wt% La2Li0.5Co0.5O4 decreased by 50.5% compared to the composites without La2Li0.5Co0.5O4, and charge quantity in the insulating layer was reduced by 41.2%.

Synthesis of a Novel Semi-Conductive Composites Doping with La0.8Sr0.2MnO3 for Excellent Electric Performance for HVDC Cable.

The semi-conductive layer located between the wire core and the insulation layer in high voltage direct current (HVDC) cable plays a vital role in uniform electric field and affecting space charges behaviors. In this work, the research idea of adding ionic conductive particles to semi-conductive materials to improve the conductive network and reduce the energy of the moving charge inside it and to suppress charge injection was proposed. Semi-conductive composites doped with different La0.8Sr0.2MnO3 (LSM) contents were prepared. Resistivity at different temperatures was measured to investigate the positive temperature coefficient (PTC) effect. Pulse electro-acoustic (PEA) method and thermal-stimulation depolarization currents (TSDC) tests of the insulation layers were carried out. From the results, space charge distribution and TSDC currents in the insulation samples were analyzed to evaluate the inhibitory effect on space charge injection. When LSM content is 6 wt. %, the experimental results show that the PTC effect of the specimen and charge injection are both being suppressed significantly. The maximum resistivity of it is decreased by 53.3% and the insulation sample has the smallest charge amount, 1.85 × 10−7 C under 10 kV/mm—decreased by 40%, 3.6 × 10−7 C under 20 kV/mm—decreased by 45%, and 6.42 × 10−7 C under 30 kV/mm—decreased by 26%. When the LSM content reaches 10 wt. %, the suppression effect on the PTC effect and the charge injection are both weakened, owing to the agglomeration of the conductive particles inside the composites which leads to the interface electric field distortion and results in charge injection enhancement.

Mechanism of deep trap sites in epoxy/graphene nanocomposite using quantum chemical calculation

Deep trap sites have been proved able to suppress charge injection into nanocomposites even under high electric field. In order to reveal the mechanism of deep trap sites in epoxy/graphene nanocomposite, the trap distribution was obtained through surface potential decay (SPD) method. The energy levels and 3D potential distributions of epoxy and single-layer graphene under vertical or various parallel electric fields were calculated by using the density functional theory (DFT). The experimental and calculation results indicate that doping with graphene sheets introduces deep trap sites in epoxy/graphene composite. Under parallel electric field, the apparent dipoles of single-layer graphene build positive and negative potential wells in pairs, which capture carriers as the trap sites in epoxy/graphene composite. While a vertical electric field seems to have no effect on the trap sites. For better performance in suppressing charge injection, the doped graphene sheets should be exposed partially to a parallel electric field.

Space charge characteristics of fluorinated polyethylene: Different effects of fluorine and oxygen

Direct fluorination are proved having obvious effect on space charge characteristics of polyethylene. It is believed that fluorine has a positive effect on suppressing space charge injection while oxygen impurity has a negative effect. However, the mechanism for the opposite effect of fluorine and oxygen is still not clear. In this paper, the different effects of fluorine and oxygen on space charge characteristics of fluorinated low density polyethylene (LDPE) are investigated on the basis of dielectric property, chemical constitutes and trap performance of surface fluorinated layers. The results show that direct fluorination has obvious effect on chemical constitutes and dielectric properties of surface fluorinated layer. Introduced fluorine is the main factor for suppressing charge injection from the electrodes, because it seriously changes the chemical constitutes and further the trap properties of the surface fluorinated layer. While introduction of oxygen results in heterocharges and makes space charge distribution complex, due to the ionization of generated small groups like C=O containing groups. Moreover, direct fluorination will result in cleavage of some LDPE molecules whatever there is oxygen impurity or not.

Silver nanoparticles as a key feature of a plasma polymer composite layer in mitigation of charge injection into polyethylene under dc stress

The aim of this work is to limit charge injection from a semi-conducting electrode into low density polyethylene (LDPE) under dc field by tailoring the polymer surface using a silver nanoparticles-containing layer. The layer is composed of a plane of silver nanoparticles embedded in a semi-insulating organosilicon matrix deposited on the polyethylene surface by a plasma process. Size, density and surface coverage of the nanoparticles are controlled through the plasma process. Space charge distribution in 300 μm thick LDPE samples is measured by the pulsed-electroacoustic technique following a short term (step-wise voltage increase up to 50 kV mm−1, 20 min in duration each, followed by a polarity inversion) and a longer term (up to 12 h under 40 kV mm−1) protocols for voltage application. A comparative study of space charge distribution between a reference polyethylene sample and the tailored samples is presented. It is shown that the barrier effect depends on the size distribution and the surface area covered by the nanoparticles: 15 nm (average size) silver nanoparticles with a high surface density but still not percolating form an efficient barrier layer that suppress charge injection. It is worthy to note that charge injection is detected for samples tailored with (i) percolating nanoparticles embedded in organosilicon layer; (ii) with organosilicon layer only, without nanoparticles and (iii) with smaller size silver particles (<10 nm) embedded in organosilicon layer. The amount of injected charges in the tailored samples increases gradually in the samples ranking given above. The mechanism of charge injection mitigation is discussed on the basis of complementary experiments carried out on the nanocomposite layer such as surface potential measurements. The ability of silver clusters to stabilize electrical charges close to the electrode thereby counterbalancing the applied field appears to be a key factor in explaining the charge injection mitigation effect.

Suppression effect of surface fluorination on charge injection into linear low density polyethylene

To suppress charge injection from electrodes, direct fluorination using fluorine gas was used for linear low density polyethylene (LLDPE) since it is one of the most effective methods of the polymer surface modification. Surface fluorination of the LLDPE plates was obtained as indicated by attenuated total reflection infrared spectroscopy. Remarkable suppression of charge injection by the surface fluorination was observed by space charge distribution measurements using the pressure wave propagation method. Comparing with the remarkable bipolar charge distribution in bulk of the original LLDPE, there is less space charge in bulk and it mostly exists in the fluorinated surface layers. The possible mechanisms of the charge injection suppression are discussed, one of which, the effect of fluorination on the charge traps in surface layer was investigated by the thermally stimulated discharge technique. The results indicate that fluorination has charge traps in the surface layer remarkably deepened and charges captured in the deep traps can block or shield the further charge injection.

Charge injection and photooxidation of single conjugated polymer molecules.

The complex, coupled mechanisms of charge transfer and oxidative damage in organic electronic devices (such as organic light-emitting diodes (OLED), solar cells, etc.) have been elucidated by a new technique that combines single-molecule spectroscopy with charge injection from a metal electrode. The experiments employed a sandwich device architecture (Au/TPD/MEH-PPV:PMMA/SiO2/ITO), essentially a modified OLED with a charge-blocking layer (SiO2) to suppress charge injection at the ITO electrode. The fluorescence (photoluminescence) of isolated MEH-PPV conjugated polymer molecules imbedded in the device was observed to exhibit diverse time- and electrical bias-dependent effects. These include: (i) fluorescence quenching due to interactions between MEH-PPV and holes in the TPD hole-transport layer; (ii) fluorescence quenching, or "photobleaching", due to chemical defects at MEH-PPV generated by photooxidation; and (iii) a novel process, reductive "repair" of the oxidative chemical defects by externally injected carriers. These results demonstrate a very different mechanism for photobleaching of organic conjugated materials than is generally assumed to operate and, furthermore, suggest an intimate relationship among photobleaching, charge transport, and persistent photoconductivity in organic materials.