Superior Temperature Stability Research Articles

Enhancing piezoelectric coefficient and thermal stability in lead-free piezoceramics: insights at the atomic-scale

Given the highly temperature-sensitive nature of the polymorphic phase boundaries, attaining excellent piezoelectric coefficient with superior temperature stability in lead-free piezoceramics via direct compositional design remains a formidable challenge. We demonstrate the synergistic improvement of piezoelectric coefficient and thermal stability in lead-free piezoceramics via atomic-scale local ferroelectric structure design. Via modulation of the local Landau energy barrier at doping sites, we effectively mitigate fluctuations in piezoelectric d33. Our approach achieves an impressive d33 of ~430 pC/N with a minimal temperature fluctuation range (△d33 ~ 7%) across the room temperature to 100 °C in potassium sodium niobate ceramics. Further optimization through annealing extends this temperature up to 150 °C (△d33 ~ 8%) while maintaining a high d33 of ~380 pC/N, rivaling the performance of classic temperature stable lead zirconate titanate. This work establishes a framework for addressing the dilemma between high piezoelectric coefficient and inadequate temperature stability in lead-free piezoceramics.

High Piezoelectric Performance of KNN-Based Ceramics over a Broad Temperature Range through Crystal Orientation and Multilayer Engineering.

Uninterrupted breakthroughs in the room temperature piezoelectric properties of KNN-based piezoceramics have been witnessed over the past two decades; however, poor temperature stability presents a major challenge for KNN-based piezoelectric ceramics in their effort to replace their lead-based counterparts. Herein, to enhance temperature stability in KNN-based ceramics while preserving the high piezoelectric response, multilayer composite ceramics were fabricated using textured thick films with distinct polymorphic phase transition temperatures. The results demonstrated that the composite ceramics exhibited both outstanding piezoelectric performance (d33~467 ± 16 pC/N; S~0.17% at 40 kV/cm) and excellent temperature stability with d33 and strain variations of 9.1% and 2.9%, respectively, over a broad temperature range of 25-180 °C. This superior piezoelectric temperature stability is attributed to the inter-inhibitive piezoelectric fluctuations between the component layers, the diffused phase transition, and the stable phase structure with a rising temperature, as well as the permanent contribution of crystal orientation to piezoelectric performance over the studied temperature range. This novel strategy, which addresses the piezoelectric and strain temperature sensitivity while maintaining high performance, is well-positioned to advance the commercial application of KNN-based lead-free piezoelectric ceramics.

Enhanced stability and catalytic performance of immobilized phospholipase D on chitosan-encapsulated magnetic nanoparticles using oxidized dextran and glutaraldehyde as cross-linkers

Phospholipase D (PLD) is essential for the bioconversion of phosphatidylcholine (PC) to phosphatidylserine (PS), a process valuable in functional food and medicine. This study explores the stability and catalytic properties of PLD immobilized on chitosan-encapsulated magnetic nanoparticles (CMNPs), utilizing oxidized dextran (DX) and glutaraldehyde (Glu) as cross-linkers. The cross-linker concentration and immobilization time were optimized to assess their effects on PLD catalytic performance. PLD immobilized on CMNPs with DX (DX-CMNPs-PLD) exhibited optimal activity at pH 8.0 and 30 °C, retaining over 40 % activity after 14 cycles, while Glu-cross-linked PLD (Glu-CMNPs-PLD) retained approximately 65 %. DX-CMNPs-PLD demonstrated superior pH, temperature, and operational stability compared to free PLD. Additionally, the immobilized PLD was characterized using transmission electron microscopy, X-ray diffraction, and Fourier-transform infrared spectroscopy. Kinetics parameters (Vmax and Km) of the immobilized PLD were also studied with free PLD serving as a control. Conformational analyses indicated a significant change in PLD's secondary structure, particularly in β-sheet content, which likely contributed to the enhanced stability and activity. These findings suggest a promising approach for PLD immobilization on CMNPs, with notable implications for biotechnological applications.

High-piezoelectric lead-free BiFeO3–BaTiO3 ceramics with enhanced temperature stability and mechanical properties

BiFeO3–BaTiO3 (BF–BT) ceramics exhibit higher piezoelectric coefficients (d33), Curie temperatures (TC), and temperature stability than other high-temperature lead-free piezoelectric materials. However, despite their crucial role in piezoelectric devices, the mechanical properties of BF–BT ceramics have been underexplored. A thorough evaluation of the mechanical properties of BF–BT is crucial for developing cost-effective and durable lead-free piezoelectric ceramics. Moreover, the specific causes of the high piezoelectric response and excellent temperature stability of BF–BT ceramics remain unclear owing to the instrumental detection threshold, which limits experimental studies to temperatures above 140 °C and below the degradation temperature of d33. To investigate the intrinsic origins of the high piezoelectricity and temperature stability of BF–xBT ceramics and to enhance their mechanical properties, a two-step sintering process is used to fabricate these ceramics (0.25 ≤ x ≤ 0.40). Owing to improvements in grain refinement and reduced Bi3+ volatilization, the BF–0.33BT ceramic exhibits enhanced overall performance, with a modified small punch strength of 155 MPa, Vickers hardness of 5.2 GPa, a d33 of 220 pC/N at room temperature, TC of 466 °C, and d33 values exceeding 400 pC/N at 260 °C. Phase-field simulations, which address the limitations of device detection thresholds, reveal that with increasing temperature, the domain structure relaxes, and polarization intensity decreases. This indicates that changes in the high-temperature piezoelectric properties can be attributed to domain structure relaxation and the increase in dielectric constant. Overall, BF–BT ceramics exhibit superior piezoelectric performance, mechanical properties, and temperature stability, making them highly suitable for use in high-temperature and demanding environments.

Silicon Carbide Nanowire Based Integrated Electrode for High Temperature Supercapacitors.

Silicon carbide (SiC) single crystals have great prospects for high-temperature energy storage due to their robust structural stability, ultrahigh power output, and superior temperature stability. However, energy density is an essential challenge for SiC-based devices. Herein, a facile two-step strategy is proposed for the large-scale synthesis of a unique architecture of SiC nanowires incorporating MnO2 for enhanced supercapacitors (SCs), arising from the synergy effect between the SiC nanowires as a highly conductive skeleton and the MnO2 with numerous active sites. The SiC@MnO2 integrated electrode-based SCs with ionic liquid (IL) electrolytes were assembled and delivered outstanding energy and power density, as well as a great lifespan at 150 °C. This impressive work offers a novel avenue for the practical application of SiC-based electrochemical energy storage devices with high energy density under high temperatures.

CaTiO3 nanoparticles as functional additives for the BaTiO3-based X8R type dielectric ceramics

This research investigates the potential of Calcium titanate (CaTiO3 or CT) nanoparticles as functional additives to enhance the dielectric properties of Barium titanate (BaTiO3 or BT)-based ceramic dielectrics. To address the need for high-temperature stability in MLCC (multilayer ceramic capacitor) applications, especially within the automotive and aerospace sectors, we have explored BT-based complex perovskite solid solutions comprising various cation substitutions, including Ca2+ and Yb3+, into barium titanate (BT) as a method to suppress the dielectric property anomaly near the Curie temperature effectively. The focus is on the impact of the application of CT nanoparticles as additive materials on phase formation, microstructure development, and dielectric behavior of the resulting ceramics to align with the Extended 'Temperature Coefficient of Capacitance (TCC)' criteria defined by the EIA X8R specification. When the hydrothermally synthesized CT nanopowder was applied in the Ca-doped BT ceramics fabrications as source material of the Ca dopants, it was beneficial to achieve both temperature stability and high dielectric constant. The CT nanoparticles are believed to play multiple roles during the solid-state reaction with BT and rare earth dopant (Yb). Since the Yb3+ ions can be more easily dissolved into the CT lattice than BT with their amphoteric character, the CT nanoparticles in the BT-CT-Yb2O3 mixture can act as an intermediary, dissolving the Yb3+ first in its A- or B-site before the final solid-solution formation with the BT. The sequential substitutions of the Yb3+ and Ca2+ into BT via CT nanoparticles could affect the site occupancy of Ca2+ in the BT lattice, which is very important in determining the dielectric properties of the Ca-doped BT processed in reducing atmospheres. Through a comprehensive experimental approach, including phase composition analysis via X-ray diffraction (XRD) and microstructural examination using Field Emission Scanning Electron Microscopy (FE-SEM) and Transmission Electron Microscopy (TEM), this work reveals the significance of synthetic methodology and dopant incorporation strategy on achieving a desired core-shell microstructure and improved dielectric performance. This research underscores the efficacy of CT nanoparticles as a promising route towards the development of BT-based dielectric ceramics with superior temperature stability, offering valuable insights for the advancement of MLCC technology to cater to high-temperature applications.

Optimizing high-temperature energy storage in tungsten bronze-structured ceramics via high-entropy strategy and bandgap engineering

As a vital material utilized in energy storage capacitors, dielectric ceramics have widespread applications in high-power pulse devices. However, the development of dielectric ceramics with both high energy density and efficiency at high temperatures poses a significant challenge. In this study, we employ high-entropy strategy and band gap engineering to enhance the energy storage performance in tetragonal tungsten bronze-structured dielectric ceramics. The high-entropy strategy fosters cation disorder and disrupts long-range ordering, consequently regulating relaxation behavior. Simultaneously, the reduction in grain size, elevation of conductivity activation energy, and increase in band gap collectively bolster the breakdown electric strength. This cascade effect results in outstanding energy storage performance, ultimately achieving a recoverable energy density of 8.9 J cm−3 and an efficiency of 93% in Ba0.4Sr0.3Ca0.3Nb1.7Ta0.3O6 ceramics, which also exhibit superior temperature stability across a broad temperature range up to 180 °C and excellent cycling reliability up to 105. This research presents an effective method for designing tetragonal tungsten bronze dielectric ceramics with ultra-high comprehensive energy storage performance.

High energy storage performance under low electric fields and remarkable dielectric temperature stability in (Na0.5Bi0.5)TiO3-based lead-free ceramics

Lead-free ceramic capacitors with superior energy storage properties and dielectric temperature stability are urgent needs for pulsed power devices. However, the risk of high voltage suppresses the improvement of comprehensive performance. Thus, a novel (1-x)(0.55Na0.5Bi0.5TiO3-0.45Ba0.85Ca0.15Zr0.1Ti0.9O3)-xBi(Mg2/3Ta1/3)O3 (NBBCZT-xBMT) ceramics were successfully synthesized to address the above concerns. The addition of BMT is beneficial to maintaining high polarization strength, improving the breakdown strength and optimizing relaxor behavior. As a result, the optimum component exhibits excellent energy storage capability (Wrec = 3.05 J/cm3, η = 94.3 %) at 190 kV/cm and dielectric temperature stability (TCC ≤ ±10 % from 33 to 348 °C, tanδ ≤ 0.01 from 50 to 389 °C). Moreover, the corresponding sample maintains a variation of Wrec less than 6.7 % and η less than 1.6 % at 20–140 °C and 1–100 Hz. These results provide a novel candidate for high-performance ceramic capacitors under low electric fields.

Photoelectric properties of CsPbBr3 perovskite solar cells based on amorphous Nb2O5 electron transport layer

Abstract The superior air and temperature stability and the cheap production costs of the inorganic CsPbBr3 solar cell (PSC) were major concerns. For inorganic CsPbBr3 devices, TiO2 crystals (c-TiO2) are frequently used as an electronic transfer layer (ETL). However, because c-TiO2 preparation necessitates temperatures over 450°C, the flexible inorganic device CsPbBr3 cannot be used. In addition, the low mobility of electrons further limits the ability to improve device performance. On this basis, a novel amorphous Nb2O5 (a-Nb2O5) was prepared. This paper introduces a simple method of preparing inorganic planar CsPbBr3 devices by room temperature sputtering. The highest efficiency of PSC prepared with a-Nb2O5 ETL was 5.74%, which was higher than that of crystalline Nb2O5 (a-Nb2O5) or crystalline TiO2 (c-TiO2) based PSC (5.12% or 4.67%). The photovoltaic properties of CsPbBr3 PSC prepared by a-Nb2O5 ETL were improved. The causes might be attributed to the following: excellent crystallization of the films made from a-Nb2O5 and CsPbBr3, low charge recombination rate of the a-Nb2O5/CsPbBr3 interface, strong optical transmission, and appropriate operating function of a-Nb2O5. In addition, PSC CsPbBr3 based on unpackaged a-Nb2O5 has good long-term stability in the atmosphere. This work offers a fresh line of inquiry for producing extremely effective inorganic PSC.

Ultrahigh strain and superior temperature stability in lead-free ceramics via synergetic texture technique and phase structure engineering

Lead-free piezoelectric ceramics with large strain response and good temperature stability are highly required for actuator applications. However, the search for lead-free ceramics with both enhanced strain and reduced thermal-dependent behavior is a great challenge. In this work, by employing templated grain growth technique and elaborately modulate the phase structure, large unipolar strain of 0.30 %, low strain hysteresis Hs ∼ 12 %, along with small strain variation 11.8 % between 20 and 100 °C are achieved in (001)C-oriented (Ba0.95Ca0.05)(Sn0.04Ti0.96)O3 ceramics, being the optimal level of BaTiO3 family. It is revealed the ceramics exhibit a coexistence of orthorhombic and tetragonal phases. The inherent piezoelectric anisotropy of orthorhombic phase, the reversible a→c domain switch, along with the refined non-180° domain structures contribute to the remarkable electrostrain characteristic. This study proposed a promising strategy to develop high performance piezoelectric materials for actuator applications.

Sintering behaviors, microstructure and properties of CaO–B2O3–SiO2 glass-ceramics for LTCC applications

The aim of this work was to investigate the impacts of MgO on the crystalline behaviors, microstructure, and properties of CaO–B2O3–SiO2 (CBS) glass-ceramics. In the study, the CBS samples with various MgO contents were developed via the melting and quenching route. Subsequently, a CBS casting tape and a multi-layered LTCC microcircuit module were created by using the tape casting method. Results indicated that MgO could break the glass network and promote the formation of liquid phase during the sintering process. A suitable amount of MgO additive promoted densification during firing process and improved the properties of the CBS materials. The CBS sample with 1.5 wt% MgO fired at 875 °C exhibited outstanding properties, including a dielectric constant (εr) of 6.5 (at 10 GHz), a dielectric loss (tan δ) of 8 × 10−4, a flexural strength of 167 MPa, a coefficient of thermal expansion (CTE) of 6.8 ppm/°C, and a thermal conductivity (λ) of 2.2 W/mK. In addition, this LTCC material demonstrated good co-firing compatibility with silver electrodes and superior temperature stability, showing its great potential for microelectronic applications.

Enhancing the piezoelectric properties and thermal stability of PMN-PMS-PSZT high-power piezoelectric ceramics through defect engineering

The development of high-power piezoelectric ceramics with superior piezoelectric properties and broad temperature usage ranges is vital for the thriving progress of electromechanical applications. However, achieving high piezoelectricity, high mechanical quality factor, and temperature stability often presents a trade-off. In this study, we present an advanced ceramic material with excellent high-power piezoelectric properties and superior temperature stability. The piezoelectric coefficient d33 reaches 348 pC N−1, the electromechanical coupling factor kp is 54%, the mechanical quality factor Qm is 1501, the dielectric loss tanδ is 0.35%, and the d33 variation is less than 10% within 25–210 °C in 0.05Pb(Mg1/3Nb2/3)O3-0.05Pb(Mn1/3Sb2/3)O3-0.9Pb0.95Sr0.05(Zr0.48Ti0.52)O3 ceramic. The excellent piezoelectricity is attributed to the enhancement of intrinsic ionic displacement and reversible domains wall motion because of symmetry-conforming short-range distribution of oxygen vacancy, while the high Qm is a result of increased domain size and oxygen vacancy. The outstanding temperature stability is related to the stable non-180°domains structure due to the oxygen vacancy pinning effect. These properties hold great potential for advanced applications, particularly for piezoelectric high-power applications requiring constant d33 over a broad temperature range.

Nonvolatile and reconfigurable two-terminal electro-optic duplex memristor based on III-nitride semiconductors

With the fast development of artificial intelligence (AI), Internet of things (IOT), etc, there is an urgent need for the technology that can efficiently recognize, store and process a staggering amount of information. The AlScN material has unique advantages including immense remnant polarization, superior temperature stability and good lattice-match to other III-nitrides, making it easy to integrate with the existing advanced III-nitrides material and device technologies. However, due to the large band-gap, strong coercive field, and low photo-generated carrier generation and separation efficiency, it is difficult for AlScN itself to accumulate enough photo-generated carriers at the surface/interface to induce polarization inversion, limiting its application in in-memory sensing and computing. In this work, an electro-optic duplex memristor on a GaN/AlScN hetero-structure based Schottky diode has been realized. This two-terminal memristor shows good electrical and opto-electrical nonvolatility and reconfigurability. For both electrical and opto-electrical modes, the current on/off ratio can reach the magnitude of 104, and the resistance states can be effectively reset, written and long-termly stored. Based on this device, the “IMP” truth table and the logic “False” can be successfully reproduced, indicating the huge potential of the device in the field of in-memory sensing and computing.

Exceptional electrostrain with minimal hysteresis and superior temperature stability under low electric field in KNN-based lead-free piezoceramics

Exceptional electrostrain with minimal hysteresis and superior temperature stability under low electric field in KNN-based lead-free piezoceramics

Entropy regulation enhanced superior energy storage density and high temperature stability in lead-free relaxors

The inferior energy storage capability and high temperature reliability of ceramic capacitors are a main factor restrict the further application. In this article, we propose to overcome the above issues through increasing the configuration entropy (∆Sconfig). The novel high entropy ceramics (1-x) (Na0.5Bi0.47La0.03)0.94Ba0.06TiO3-xCa0.7La0.2Ti0.85Hf0.15O3 were successfully designed and synthesized to enhance comprehensive performance. With the ∆Sconfig rises from 0.98 R to 1.54 R, the optimum composition exhibits outstanding recoverable energy storage density (Wrec) of 6.21 J/cm3 under 420 kV/cm and dielectric high temperature stability (∆C/C25 °C ≤ ± 15%, −59–372 °C) in accordance with X9R, which can be ascribed to refined grain size, improved bandgap width, inhibited leakage current and interfacial polarization and modified relaxor behavior caused by the improvement of ∆Sconfig. Interestingly, the high entropy composition was firstly tested fatigue endurance at 150 °C and 200 °C and shown prominent high temperature reliability. These results provide a new viewpoint for designing high temperature capacitors.

Flash sintering BaTiO3-0.01MgO-0.01Nb2O5-xBi2O3 ceramics with superior dielectric temperature stability via defect engineering

In this paper, Bi2O3 doped BaTiO3-0.01MgO-0.01Nb2O5 ceramics are designed to increase dielectric constant, reduce dielectric loss and improve temperature dielectric stability through inducing defects, and are prepared by flash sintering method to inhibit the volatilization of Bi element and ensure the element ratio. The microstructure, polarization mechanisms, dielectric properties and conduction mechanism of the ceramics are studied. The doping of Bi2O3 can enhance the relaxation behavior and dielectric properties. The defects evolution in BaTiO3-0.01MgO-0.01Nb2O-0.01Bi2O3 ceramics are studied. The results show that the BaTiO3 ceramics doped with different amounts of Bi2O3 can form defect dipoles {[BiBa∙‐MgTi″‐BiBa∙]×, [NbTi∙‐VBa″‐NbTi∙]×, [MgTi″‐VO∙∙]×} and oxygen vacancy, which enhance the short-range transition within the grain and inhibit the movement of free electrons at the grain boundary. The ceramics have excellent room temperature properties, high dielectric constant (εr = 2894) and low dielectric loss (tanδ < 0.03). The ceramics have superior temperature stability and satisfying the EIA X8R (Δεr/ε25 ≤ ±15 %, over the temperature range from −55 °C to 150 °C). It is found that flash sintering can effectively guarantee the stoichiometric concentration of bismuth element and obtain good properties of ceramics. This study demonstrates the potential of Bi2O3 doped BaTiO3-based ceramics synthetized by flash sintering as high-performance electronic device materials.

NaNbO3‐Based Multilayer Ceramic Capacitors with Ultrahigh Energy Storage Performance

AbstractWith the gradual promotion of new energy technologies, there is a growing demand for capacitors with high energy storage density, high operating temperature, high operating voltage, and good temperature stability. In recent years, researchers have been devoted to improving the energy storage properties of lead‐based, titanium‐based, and iron‐based multilayer ceramic capacitors (MLCCs). However, limited research has been conducted into MLCC development using NaNbO3 (NN)‐based materials. In this paper, the successful achievement of excellent overall energy storage performance in a novel NaNbO3–(Bi0.5Na0.5)TiO3–Bi(Mg0.5Hf0.5)O3 lead‐free MLCCs is presented. The disordered tilting around the cp axis, disrupts Na and Bi ions' long‐range displacements and induces PNRs and strong relaxor behavior, which ensures a superior energy storage performance, together with the multilayer ceramic design strategy. As a result, the NN‐based MLCC device presents an ultra‐high Wrec = 12.65 J cm−3 and η = 88.5%, simultaneously showing superior temperature stability (Wrec varies &lt;±1% and η varies &lt;±6% from −50 to 125 °C) and fatigue resistance (Wrec and η vary &lt;±1% over 107 cycles). This study highlights the advanced energy storage potential of NaNbO3‐based MLCCs for various applications, and ushers in a new era for designing high‐performance lead‐free capacitors that can operate in harsh environments.

Corrosion Inhibition of Benzyl Quinoline Chloride Derivative-Based Formulation for Acidizing Process

Summary Due to the severe and rapid corrosion of metallic equipment by strong acids at high temperatures, a high concentration of acidizing corrosion inhibitors (ACIs) is required during acidizing processes. There is always a need to develop more effective and environmentally friendly ACIs than current products. In this work, a highly effective ACI obtained from a novel main component and its synergistic effect with paraformaldehyde (PFA) and potassium iodide (KI) is presented. The ACI was prepared from the crude product of benzyl quinolinium chloride derivative (BQD) synthesized from benzyl chloride and quinoline in a simple way. The new ACI formulation, named “synergistic indolizine derivative mixture” (SIDM), which consists of BQD, PFA, and KI, showed superior corrosion inhibition effectiveness (IE) and temperature stability compared with commercially available ACI. More importantly, the SIDM formulation eliminates the need for commonly used highly toxic synergists (e.g., propargyl alcohol and As2O3). In a 20 wt% hydrochloric acid (HCl) solution, the addition of 0.5 wt% SIDM mitigates the corrosion rate of N80 steel down to less than 0.00564 lbm·ft−2 at 194°F, while the corrosion rate at 320 °F is 0.0546 lbm·ft−2·when 4.0 wt% SIDM is added.

Superior temperature stability of electromechanical properties and resonant frequency in PYN-PZT piezoelectric ceramics

In this study, the Pb(Yb1/2Nb1/2)O3 (PYN) relaxor with high Curie temperature (TC ∼300 °C) was incorporated into PbZrO3-PbTiO3 (PZ-PT) ceramics to form 0.1PYN-(1-x)PZ-xPT ternary ceramics, and their phase compositions were systematically investigated, providing the more detailed phase diagrams, dielectric, piezoelectric, and ferroelectric properties. Excellent piezoelectric performance (d33 ∼ 450 pC/N, d33* ∼714 pm/V), with high coercive field (EC ∼17.5 kV/cm) and TC (∼398 °C) were simultaneously achieved in the 0.1PYN-0.41PZ-0.49PT composition near the morphotropic phase boundary (MPB). The value of d33 × EC, which exhibits higher than commercial PZT ceramics, indicates its suitability for high-field excitation devices. Additionally, the temperature stability of the resonant frequency (fr) is qualitatively studied by analyzing the main factors influencing fr from a theoretical perspective. Superior stability is achieved in the 0.1PYN-0.38PZ-0.52PT composition (TC ∼ 405 °C) with tetragonal phase, and the temperature coefficient of resonant frequency (Δfr /fr25 °C) remains within 0.5% up to 300 °C, far outperformance than previous reports.

Giant Energy Storage Density with Antiferroelectric-Like Properties in BNT-Based Ceramics via Phase Structure Engineering.

Driven by the information industry, advanced electronic devices require dielectric materials which combine both excellent energy storage properties and high temperature stability. These requirements hold the most promise for ceramic capacitors. Among these, the modulated Bi0.5 Na0.5 TiO3 (BNT)-based ceramics can demonstrate favorable energy storage properties with antiferroelectric-like properties, simultaneously, attaching superior temperature stability resulted from the high Curie temperature. Inspired by the above properties, a strategy is proposed to modulate antiferroelectric-like properties via introducing Ca0.7 La0.2 TiO3 (CLT) into Bi0.395 Na0.325 Sr0.245 TiO3 (BNST) ((1-x)BNST-xCLT, x = 0.10, 0.15, 0.20, 0.25). Combining both orthorhombic phase and defect dipole designs successfully achieve antiferroelectric-like properties in BNST-CLT ceramics. The results illustrate that 0.8BNST-0.2CLT presents superior recoverable energy storage density ≈8.3 J cm-3 with the ideal η ≈ 80% at 660kV cm-1 . Structural characterizations demonstrate that there is the intermediate modulated phase with the coexistence of the antiferroelectric and ferroelectric phases. In addition, in situ temperature measurements prove that BNST-CLT ceramics exhibit favorable temperature stability over a wide temperature range. The present work illustrates that BNT-based ceramics with antiferroelectric-like properties can effectively enhance the energy storage performance, which provides novel perspectives for the subsequent development of advanced pulsed capacitors.